JPH056141A - El display device - Google Patents
El display deviceInfo
- Publication number
- JPH056141A JPH056141A JP3156575A JP15657591A JPH056141A JP H056141 A JPH056141 A JP H056141A JP 3156575 A JP3156575 A JP 3156575A JP 15657591 A JP15657591 A JP 15657591A JP H056141 A JPH056141 A JP H056141A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- display device
- film
- oxide
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002161 passivation Methods 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims abstract description 6
- 239000010409 thin film Substances 0.000 claims description 46
- 239000010408 film Substances 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 239000010407 anodic oxide Substances 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 238000007743 anodising Methods 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WYXIGTJNYDDFFH-UHFFFAOYSA-Q triazanium;borate Chemical compound [NH4+].[NH4+].[NH4+].[O-]B([O-])[O-] WYXIGTJNYDDFFH-UHFFFAOYSA-Q 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、薄型で表示の視認性が
優れ、ＯＡ機器などの端末ディスプレイとして最適であ
るＥＬ表示装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an EL display device which is thin and has excellent display visibility and is optimal as a terminal display for OA equipment and the like.
【０００２】[0002]
【従来の技術】従来よりＥＬ素子をＸ−Ｙマトリックス
構成にした薄膜ＥＬ表示装置が知られている。一般に、
このＥＬ表示装置は第１誘電体層／蛍光体層／第２誘電
体層の積層薄膜の両面に水平方向電極群と垂直方向電極
群とを互いに直交するように配置し、それぞれの電極群
に接続された給電線により、切り換え装置を通して信号
を加えて、両電極の交点部分の蛍光体層を発光させ（こ
の交点の発光部分面を絵素と称する）、発光した絵素の
組合せによって文字、記号、図形などを表示させるもの
である。2. Description of the Related Art Conventionally, there is known a thin film EL display device in which EL elements have an XY matrix structure. In general,
In this EL display device, horizontal electrode groups and vertical electrode groups are arranged so as to be orthogonal to each other on both surfaces of a laminated thin film of a first dielectric layer / a phosphor layer / a second dielectric layer, and each electrode group is A signal is applied through the switching device by the connected power supply line to cause the phosphor layer at the intersection of both electrodes to emit light (the light emitting part surface of this intersection is referred to as a pixel), and the combination of the emitted pixels causes characters, Symbols, figures, etc. are displayed.
【０００３】上記ＥＬ表示装置は通常ガラス製の透光性
基板上に、スズをドープした酸化インジウム（以下ＩＴ
Ｏと略称する）からなる透明な平行電極群を形成し、そ
の上に第１誘電体層、蛍光体層、第２誘電体層を順次形
成し、さらにその上に、一般にＡｌ金属からなる背面平
行電極群を前記透明電極群に直交する配置で積層して作
製する。In the above EL display device, tin-doped indium oxide (hereinafter referred to as IT) is usually provided on a transparent substrate made of glass.
(Hereinafter abbreviated as O), a transparent parallel electrode group is formed, a first dielectric layer, a phosphor layer, and a second dielectric layer are sequentially formed on the transparent parallel electrode group, and a rear surface generally made of Al metal is further formed thereon. The parallel electrode group is laminated and produced in an arrangement orthogonal to the transparent electrode group.
【０００４】また、ＥＬ表示装置を湿気から保護し、薄
膜層間剥離を防止することによる長寿命化を目的として
パッシベーションを、絶縁油やゼオライトでの封止、も
しくはＡｌ2Ｏ3膜のような化学的に安定な薄膜で覆うと
いった構成で行なっている。Further, for the purpose of prolonging the life of the EL display device by protecting it from moisture and preventing thin film delamination, passivation is performed by sealing with insulating oil or zeolite, or by chemical treatment such as Al 2 O 3 film. The structure is such that it is covered with an electrically stable thin film.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら上記の従
来の構成では、パッシベーションを行なうにあたり、さ
らにＥＬ表示装置に加工を行ったり、またパッシベーシ
ョン膜を真空装置にて製膜しなければならない等、製造
プロセスにおいて工程が多くなるといった課題を有して
いた。However, in the above-mentioned conventional structure, when the passivation is performed, the EL display device must be further processed, and the passivation film must be formed by the vacuum device. However, there is a problem that the number of processes is increased.
【０００６】本発明は上記従来のＥＬ表示装置の課題を
解決するもので、耐環境性に優れ、化学的に安定な酸化
物によるバックパッシベーション膜で覆われたＥＬ表示
装置を提供することを目的とする。The present invention solves the problems of the conventional EL display device described above, and an object thereof is to provide an EL display device which is excellent in environmental resistance and is covered with a back passivation film of a chemically stable oxide. And
【０００７】[0007]
【課題を解決するための手段】本発明のＥＬ表示装置
は、背面電極と同じ材料の金属薄膜を最外表面に積層
し、その金属薄膜を酸化して得られた酸化物薄膜をバッ
クパッシベーション膜とするものである。In the EL display device of the present invention, a metal thin film made of the same material as the back electrode is laminated on the outermost surface, and an oxide thin film obtained by oxidizing the metal thin film is used as a back passivation film. It is what
【０００８】[0008]
【作用】本発明は、上記構成により製造プロセスにおけ
る工程を減らし、しかも耐環境性に優れ、化学的に安定
な酸化物薄膜によるバックパッシベーション膜で覆われ
たＥＬ表示装置を形成することができる。According to the present invention, it is possible to reduce the number of steps in the manufacturing process by the above-mentioned structure, and to form an EL display device which is excellent in environmental resistance and which is covered with a back passivation film of a chemically stable oxide thin film.
【０００９】[0009]
【実施例】以下本発明の一実施例について、図面を参照
しながら説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
【００１０】図１は本発明の一実施例における酸化物薄
膜によるバックパッシベーション膜を用いたＥＬ表示装
置の基本構成断面図である。同図において、１は酸化物
薄膜（バックパッシベーション膜）、２は背面電極、３
は背面電極と同じ材料の金属薄膜、４は第２誘電体薄
膜、５は蛍光体薄膜、６は第１誘電体薄膜、７は透明電
極、８はガラス基板である。FIG. 1 is a sectional view of the basic structure of an EL display device using a back passivation film made of an oxide thin film according to an embodiment of the present invention. In the figure, 1 is an oxide thin film (back passivation film), 2 is a back electrode, 3
Is a metal thin film made of the same material as the back electrode, 4 is a second dielectric thin film, 5 is a phosphor thin film, 6 is a first dielectric thin film, 7 is a transparent electrode, and 8 is a glass substrate.
【００１１】図１に示すように、ガラス基板８上に合金
ターゲットを用いてＩＴＯ薄膜を直流スパッタ法で形成
し、ホトリソグラフィ技術によりストライプ状に加工
し、透明電極７とした。第１誘電体薄膜６はＳiＯＮと
し、Ｓiターゲットを用いて窒素と一酸化窒素の混合ガ
ス中で、反応性スパッタ法により２００ｎｍの厚さに形
成した。その上にＥＢ蒸着法でＺｎＳ：Ｍｎを用いた蛍
光体薄膜５を４５０ｎｍの厚さに形成した。発光センタ
ーのＭｎの含量は０．８原子％にした。蛍光体薄膜５形
成後、輝度アップのために真空雰囲気中で５５０℃、１
時間の熱処理を行なった。つぎに第２誘電体薄膜４を蛍
光体薄膜５の上に２００〜４００ｎｍの厚さに形成し
た。薄膜材料、及び製膜方法は第１誘電体薄膜６の時と
同じである。そして背面電極２としてＡｌをＥＢ蒸着法
で付け、その後、ホトリソグラフィ技術でＩＴＯ電極と
直交するストライプ状に加工して薄膜ＥＬ表示装置を完
成した。As shown in FIG. 1, an ITO thin film was formed on a glass substrate 8 by using an alloy target by a DC sputtering method and processed into a stripe shape by a photolithography technique to form a transparent electrode 7. The first dielectric thin film 6 was SiON and was formed to a thickness of 200 nm by reactive sputtering in a mixed gas of nitrogen and nitric oxide using a Si target. A phosphor thin film 5 using ZnS: Mn was formed thereon with a thickness of 450 nm by an EB vapor deposition method. The Mn content of the light emission center was 0.8 atomic%. After forming the phosphor thin film 5, in a vacuum atmosphere at 550 ° C., 1 to increase brightness.
Heat treatment was performed for a time. Next, the second dielectric thin film 4 was formed on the phosphor thin film 5 to a thickness of 200 to 400 nm. The thin film material and the film forming method are the same as those for the first dielectric thin film 6. Then, Al was attached as the back electrode 2 by the EB vapor deposition method, and then processed into a stripe shape orthogonal to the ITO electrode by the photolithography technique to complete the thin film EL display device.
【００１２】さらに、背面電極２を含む最外表面上に、
ＥＬ表示装置を覆い隠すように背面電極２と同じ材料の
金属薄膜（Ａｌ）３を製膜する。そしてこの金属薄膜３
（Ａｌ）のみをすべて陽極酸化することにより酸化物薄
膜（Ａｌ2Ｏ3）を得、バックパッシベーション膜１とし
た。陽極酸化にはｐＨ＝６〜７の中性の化成液（例えば
３％ほう酸アンモニウム水溶液：エチレングリコール＝
１：９）を用いており、ウォーターバスによって溶液温
度を５０℃に保ち、一定電流のもとで陽極酸化を行な
う。中性の化成液を用いることによりバリヤータイプの
Ａｌ2Ｏ3膜を得ることができる。また陽極酸化の方法と
しては、酸素雰囲気中におけるプラズマ陽極酸化でもよ
い。これにより図１に示すような構造の、酸化物薄膜
（Ａｌ2Ｏ3）によるバックパッシベーション膜１により
保護されたＥＬ表示装置を製造することができる。Further, on the outermost surface including the back electrode 2,
A metal thin film (Al) 3 made of the same material as the back electrode 2 is formed so as to cover the EL display device. And this metal thin film 3
An oxide thin film (Al 2 O 3 ) was obtained by anodizing only (Al) and used as the back passivation film 1. For anodic oxidation, a neutral chemical solution of pH = 6 to 7 (for example, 3% ammonium borate aqueous solution: ethylene glycol =
1: 9) is used, the solution temperature is kept at 50 ° C. by a water bath, and anodization is performed under a constant current. A barrier type Al 2 O 3 film can be obtained by using a neutral chemical conversion solution. As a method of anodizing, plasma anodizing in an oxygen atmosphere may be used. As a result, an EL display device having a structure as shown in FIG. 1 and protected by the back passivation film 1 made of an oxide thin film (Al 2 O 3 ) can be manufactured.
【００１３】この方法によって製膜された酸化物薄膜
は、緻密であり膜厚班が無い等優れた特性を有してい
る。さらにＡｌ2Ｏ3は化学的にも非常に安定な薄膜であ
る。このような酸化物薄膜によるバックパッシベーショ
ン膜１を用いることにより、ＥＬ表示装置の湿気による
特性の劣化を防ぐことができる。この効果は普遍的なも
のであり、バックパッシベーション膜１に用いられる酸
化物薄膜を、Ｔa2Ｏ5、ＴiＯ2といった、陽極酸化によ
って製膜が可能な材料とすることにより、同様の効果を
示す優れたＥＬ表示装置が実現できる。The oxide thin film formed by this method has excellent characteristics such as being dense and having no thickness unevenness. Furthermore, Al 2 O 3 is a chemically very thin film. By using the back passivation film 1 made of such an oxide thin film, it is possible to prevent deterioration of the characteristics of the EL display device due to moisture. This effect is universal, and the same effect is exhibited by using the oxide thin film used for the back passivation film 1 as a material that can be formed into a film by anodic oxidation, such as Ta 2 O 5 or TiO 2. An excellent EL display device can be realized.
【００１４】さらに、図１に示すようなバックパッシベ
ーション膜１を用いたＥＬ表示装置を製造して動作を確
認した。蛍光体薄膜には硫化物を用いたＥＬ表示装置を
製造した。上記のような酸化物薄膜によるバックパッシ
ベーション膜を用いることにより、図２に示すような長
時間駆動においても、従来の方法のパッシベーションに
よるＥＬ表示装置と変わらない安定な特性を示すＥＬ表
示装置ができた。Further, an EL display device using the back passivation film 1 as shown in FIG. 1 was manufactured and its operation was confirmed. An EL display device was manufactured using sulfide for the phosphor thin film. By using the back passivation film made of the oxide thin film as described above, an EL display device having the same stable characteristics as the EL display device by the passivation of the conventional method can be obtained even when driven for a long time as shown in FIG. It was
【００１５】[0015]
【発明の効果】以上のように本発明は、バックパッシベ
ーション膜に背面電極と同じ材料の金属薄膜の酸化物を
用いることにより、簡単なプロセスによって化学的に安
定なバックパッシベーション膜が得られ、湿気による薄
膜層間剥離を防止し、長期にわたり発光特性が安定な優
れたＥＬ表示装置を実現できるものである。As described above, according to the present invention, by using an oxide of a metal thin film of the same material as the back electrode for the back passivation film, a chemically stable back passivation film can be obtained by a simple process. It is possible to realize an excellent EL display device in which the thin film delamination due to is prevented and the light emitting characteristics are stable for a long period of time.
【図１】本発明の一実施例における、酸化物薄膜による
バックパッシベーション膜を用いたＥＬ表示装置の断面
図である。FIG. 1 is a cross-sectional view of an EL display device using a back passivation film made of an oxide thin film according to an embodiment of the present invention.
【図２】本発明の一実施例におけるＥＬ表示装置の動作
説明のための寿命特性の図である。FIG. 2 is a diagram of life characteristics for explaining the operation of the EL display device in the embodiment of the present invention.
１ 酸化物薄膜（バックパッシベーション膜） ２ 背面電極 ３ 背面電極と同じ材料の金属薄膜 ４ 第２誘電体薄膜 ５ 蛍光体薄膜 ６ 第１誘電体薄膜 ７ 透明電極 ８ ガラス基板 1 Oxide thin film (back passivation film) 2 Back electrode 3 Metal thin film made of the same material as the back electrode 4 Second dielectric thin film 5 Phosphor thin film 6 First dielectric thin film 7 Transparent electrode 8 glass substrates
───────────────────────────────────────────────────── フロントページの続き (72)発明者 松岡 富造 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Tomizo Matsuoka 1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric Sangyo Co., Ltd.
Claims (3)
極、第１誘電体層、蛍光体層、第２誘電体層、背面電極
の上に、更にバックパッシベーション膜が形成されたＥ
Ｌ表示装置であって、前記バックパッシベーション膜
は、前記背面電極と同じ材料の金属薄膜を積層し、その
金属薄膜を酸化して生成された酸化物薄膜であることを
特徴とするＥＬ表示装置。1. A back passivation film is further formed on a transparent electrode, a first dielectric layer, a phosphor layer, a second dielectric layer and a back electrode, which are sequentially laminated on a glass substrate.
The EL display device is an L display device, wherein the back passivation film is an oxide thin film formed by laminating a metal thin film of the same material as the back electrode and oxidizing the metal thin film.
酸化膜であることを特徴とする請求項１記載のＥＬ表示
装置。2. The EL display device according to claim 1, wherein the oxide thin film obtained by oxidizing the metal thin film is an anodic oxide film.
チタンの酸化膜であることを特徴とする請求項２記載の
ＥＬ表示装置。3. The anodized film is aluminum, tantalum,
The EL display device according to claim 2, wherein the EL display device is a titanium oxide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3156575A JPH056141A (en) | 1991-06-27 | 1991-06-27 | El display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3156575A JPH056141A (en) | 1991-06-27 | 1991-06-27 | El display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH056141A true JPH056141A (en) | 1993-01-14 |
Family
ID=15630763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3156575A Pending JPH056141A (en) | 1991-06-27 | 1991-06-27 | El display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH056141A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100447499B1 (en) * | 2002-05-07 | 2004-09-07 | 주식회사 엘리아테크 | Organic electro luminescence display and method for manufacturing the same |
| JP2013115084A (en) * | 2011-11-25 | 2013-06-10 | Rohm Co Ltd | Organic thin-film solar cell and method for manufacturing the same |
| JP2014063748A (en) * | 2002-12-19 | 2014-04-10 | Semiconductor Energy Lab Co Ltd | Display device |
-
1991
- 1991-06-27 JP JP3156575A patent/JPH056141A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100447499B1 (en) * | 2002-05-07 | 2004-09-07 | 주식회사 엘리아테크 | Organic electro luminescence display and method for manufacturing the same |
| JP2014063748A (en) * | 2002-12-19 | 2014-04-10 | Semiconductor Energy Lab Co Ltd | Display device |
| JP2013115084A (en) * | 2011-11-25 | 2013-06-10 | Rohm Co Ltd | Organic thin-film solar cell and method for manufacturing the same |
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