JPH0416936B2 - - Google Patents

Info

Publication number
JPH0416936B2
JPH0416936B2 JP57039620A JP3962082A JPH0416936B2 JP H0416936 B2 JPH0416936 B2 JP H0416936B2 JP 57039620 A JP57039620 A JP 57039620A JP 3962082 A JP3962082 A JP 3962082A JP H0416936 B2 JPH0416936 B2 JP H0416936B2
Authority
JP
Japan
Prior art keywords
wafer
laser
laser beam
edge
scanning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57039620A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57162341A (en
Inventor
Derufuino Mikeranjero
Riifusutetsuku Teimoshii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of JPS57162341A publication Critical patent/JPS57162341A/ja
Publication of JPH0416936B2 publication Critical patent/JPH0416936B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Laser Beam Processing (AREA)
  • Recrystallisation Techniques (AREA)
JP57039620A 1981-03-16 1982-03-15 Laser scanning method in annealing, glass flowing and related treating steps Granted JPS57162341A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/244,395 US4415794A (en) 1981-03-16 1981-03-16 Laser scanning method for annealing, glass flow and related processes

Publications (2)

Publication Number Publication Date
JPS57162341A JPS57162341A (en) 1982-10-06
JPH0416936B2 true JPH0416936B2 (enExample) 1992-03-25

Family

ID=22922563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57039620A Granted JPS57162341A (en) 1981-03-16 1982-03-15 Laser scanning method in annealing, glass flowing and related treating steps

Country Status (5)

Country Link
US (1) US4415794A (enExample)
EP (1) EP0061951B1 (enExample)
JP (1) JPS57162341A (enExample)
CA (1) CA1182931A (enExample)
DE (1) DE3276282D1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58176929A (ja) * 1982-04-09 1983-10-17 Fujitsu Ltd 半導体装置の製造方法
JPH0616155B2 (ja) * 1982-10-20 1994-03-02 コニカ株式会社 放射線画像読取方法
US6417484B1 (en) * 1998-12-21 2002-07-09 Micron Electronics, Inc. Laser marking system for dice carried in trays and method of operation
US6675057B2 (en) * 2001-04-25 2004-01-06 Intel Corporation Integrated circuit annealing methods and apparatus
TW552645B (en) 2001-08-03 2003-09-11 Semiconductor Energy Lab Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device
US6847006B2 (en) * 2001-08-10 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Laser annealing apparatus and semiconductor device manufacturing method
WO2003041143A1 (en) * 2001-11-09 2003-05-15 Semiconductor Energy Laboratory Co., Ltd. Laser beam treatment device and semiconductor device
JP2008546203A (ja) * 2005-06-01 2008-12-18 マットソン テクノロジー インコーポレイテッド パルス化された加熱処理の間に熱収支を最適化する方法
US20080173620A1 (en) * 2005-09-26 2008-07-24 Ultratech, Inc. Apparatuses and methods for irradiating a substrate to avoid substrate edge damage
US8319149B2 (en) * 2008-04-16 2012-11-27 Applied Materials, Inc. Radiant anneal throughput optimization and thermal history minimization by interlacing
JP2012084620A (ja) * 2010-10-08 2012-04-26 Mitsubishi Electric Corp レーザ加工装置
JP5679940B2 (ja) * 2011-09-29 2015-03-04 住友重機械工業株式会社 レーザアニール装置、及びレーザアニール方法
DE102012111698A1 (de) * 2012-12-03 2014-03-20 Solarworld Innovations Gmbh Verfahren und Vorrichtung zum Bearbeiten mindestens eines kristallinen Silizium-Wafers oder eines Solarzellen-Wafers
US9443726B1 (en) 2015-03-13 2016-09-13 United Microelectronics Corp. Semiconductor process
CN110216370B (zh) * 2019-05-17 2021-10-01 北京华卓精科科技股份有限公司 激光退火方法和系统
JP7734113B2 (ja) * 2022-05-16 2025-09-04 住友重機械工業株式会社 レーザ処理支援装置及びレーザ処理方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3900737A (en) * 1974-04-18 1975-08-19 Bell Telephone Labor Inc Electron beam exposure system
US4131487A (en) * 1977-10-26 1978-12-26 Western Electric Company, Inc. Gettering semiconductor wafers with a high energy laser beam
US4316074A (en) * 1978-12-20 1982-02-16 Quantronix Corporation Method and apparatus for laser irradiating semiconductor material
US4234358A (en) * 1979-04-05 1980-11-18 Western Electric Company, Inc. Patterned epitaxial regrowth using overlapping pulsed irradiation
JPS55150238A (en) * 1979-05-10 1980-11-22 Matsushita Electric Ind Co Ltd Method of irradiating laser beam

Also Published As

Publication number Publication date
EP0061951B1 (en) 1987-05-06
EP0061951A3 (en) 1983-09-07
CA1182931A (en) 1985-02-19
EP0061951A2 (en) 1982-10-06
DE3276282D1 (en) 1987-06-11
JPS57162341A (en) 1982-10-06
US4415794A (en) 1983-11-15

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