JPH04168719A - Manufacturing apparatus for semiconductor device - Google Patents

Abstract

PURPOSE:To improve dimensional dispersion in a wafer surface and between wafers and between lots by installing a developing stage with a plane oppositely faced to a photo-resist surface and forming a plurality of treating-liquid discharge openings to the plane of the stage. CONSTITUTION:A treating surface is oppositely faced and held to a developing stage 5 by a wafer chuck 1 in a previously exposed and treated wafer 2, the stage 5 is supplied with a developer 6 from developer discharge openings 3, and the developer is sustained by surface tension. The chuck 1 is lowered, the surface of the wafer 2 is bonded in parallel with the stage 5, and developing is started while the wafer 2 is turned in the direction R. Developing is completed, rinsings 4 are fed from a rinsing discharge opening 4 at the center of the stage 5, the developer 6 on the wafer 2 is washed away, and the surface of the wafer 2 is rinsed. Rinsing is completed, and the wafer 2 is dried, and forwarded to the next process. Accordingly, developing uniformity in a wafer 2 surface is improved and dimensional dispersion in the wafer surface is bettered, and dimensional dispersion between the wafers and between lots can further be enhanced.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an apparatus for manufacturing semiconductor devices, and more particularly to a developing apparatus for developing a photoresist pattern using a developer.

[Conventional technology]

FIGS. 4(a) to 4(d) are longitudinal cross-sectional views illustrating the functions of a conventional developing device of this type in the order of steps. First, in FIG. 1A, a wafer 2 held by a wafer chuck 1 is transferred into a cup 15. As shown in FIG. Next, in Figure (b), the developer 6 is supplied from the developer nozzle 13 on the wafer 2,
A liquid mound of the developer 6 is formed by surface tension. Development is then started. At this time, the wafer 2 is rotated at low speed in the wafer chuck rotation direction R by the motor 10.

Next, in Figure (c), after the development is completed, the rinsing liquid 7 is supplied onto the wafer 2 from the rinsing liquid nozzle 14 while rotating the wafer 2, thereby rinsing the wafer 2. The treated liquid is discharged from the drain pipe 1. Next, in Figure (d), after rinsing is completed, the wafer 2 is rotated at high speed to dry the wafer 2. As described above, the wafer 2 was sequentially developed by repeating the operations (a) to (d).

[Problem to be solved by the invention]

In the conventional developing device described above, since the developer nozzle is located at the center, the developer is supplied from the center of the wafer, and therefore development proceeds from the center of the wafer toward the outer periphery. Therefore, there is a drawback that the dimensions of the developed photoresist vary from the center of the wafer toward the outer periphery.

Particularly in recent years, the miniaturization of semiconductor devices has been remarkable, and the resulting local delays in development have a large effect on the dimensional controllability within the wafer plane, becoming a factor that deteriorates the yield of products.

The conventional developing device described above has a structure in which the developer is supplied from a nozzle to the center of the wafer, whereas the present invention is equipped with a developer stage that instantly and simultaneously supplies the developer to the entire surface of the wafer. have differences.

[Means to solve the problem]

The semiconductor manufacturing apparatus of the present invention includes a developing stage having a flat surface facing a photoresist surface coated on a wafer, and a plurality of processing liquid discharge ports formed on the flat surface of the developing stage.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

FIGS. 1(a) to 1(e) are vertical cross-sectional views explaining the functions of the first embodiment of the present invention in the order of steps, and FIG. 2 is a plan view of the developing stage used in the first embodiment. The following is a step-by-step explanation. In Figure (a), a wafer 2 that has undergone exposure processing is held by a wafer chuck 1 with its processing surface facing the development stage 5 . Next, in figure (b),
A developer 6 is supplied to the development stage 5 from the developer discharge port 3 and held by surface tension. Next, in Figure (c), the wafer chuck 1 is lowered, the surface of the wafer 2 is adhered parallel to the development stage 5, and development is started while rotating the wafer 2 in the R direction. Next, in Figure (d), after the development is completed, a rinse liquid 7 is supplied from the rinse liquid outlet 4 in the center of the development stage 5, and the developer on the wafer is washed away.
Rinse the surface of wafer 2. Next, in figure (e),
After rinsing, the wafer 2 is dried by high speed rotation.
Sent to the next process. Thereafter, the wafer chuck 2 rises and returns to its initial position. The developing stage 5 is cleaned with the developing stage cleaning liquid 9 from the developing stage cleaning liquid nozzle 8, and then stands by for the next wafer processing. Above, (a) to (
By repeating the operation e), the wafers 2 are sequentially developed.

According to this embodiment, compared to conventional equipment, it is possible to eliminate local delays in development within the wafer plane, improve uniformity of development within the wafer plane, and significantly reduce dimensional variations within the wafer plane. will be improved. Here, as shown in FIG. 2, the development uniformity can be further improved by providing a large number of small developer discharge ports 3 of the development stage 5.

In addition, the apparatus of the second embodiment is upside down (wafer 2 is on the bottom,
A configuration in which the developing stage 5 is on the upper side) is also possible, and the same effect as in the case where the developing stage 5 is not reversed can be expected.

FIG. 3 is a longitudinal sectional view of the developing stage 5 used in Example 2 of the present invention. In order to control the temperature of the developing stage 5, a temperature regulating medium is circulated within the developing stage 5. The temperature control medium is
The temperature regulating medium flows in from the temperature regulating medium inlet 11 and flows out from the temperature regulating medium outlet 12 to keep the developing solution temperature constant. During development, the wafer 2 is developed with a developer 6 kept at a constant temperature.

Other operations are the same as in the first embodiment.

According to this embodiment, the temperature is not limited to the conventional liquid temperature.
Since the temperature of the developer on the surface of the wafer 2 is also maintained at a constant temperature due to the constant temperature effect of the development stage 5, compared to Example 1, it is possible to eliminate variations in development between wafers and between lots. Development uniformity between wafers and between lots is improved, and dimensional variations between wafers and between lots can be significantly reduced.

〔Effect of the invention〕

As explained above, the present invention can instantaneously and simultaneously supply a developer to the entire wafer surface to perform development, which eliminates only a partial delay in development within the wafer surface and improves the uniformity of development within the wafer surface. However, the dimensional variation within the wafer surface can be significantly improved from 6 to 8% in the conventional method to 2 to 3% or less.

In addition, by keeping the developer temperature constant and using it during development, development uniformity between wafers and between lots is improved.
There is an effect that the dimensional variation between wafers and between lots can be significantly improved from the conventional 9 to 10% to 3 to 4% or less.

[Brief explanation of drawings]

FIG. 1 is a vertical cross-sectional view explaining the functions of Example 1 of the present invention in the order of steps, FIG. 2 is a plan view of the developing stage used in Example 1, and FIG. 3 is Example 21 of the present invention... Wafer chuck, 2... wafer, 3... developer discharge port, 4...
...Rinse liquid discharge port, 5...Development stage, 6...
Developing solution, 7... Rinse liquid, 8... Development stage cleaning liquid nozzle, 9... Development stage cleaning liquid, 10... Motor, 11... Temperature control medium inlet, 12... Temperature control medium Outflow part, 13... Developer nozzle, 14... Rinse liquid nozzle, 15... Cup, 16... Drain pipe,
R...Wafer chuck rotation direction.

Claims (1)

[Claims] In a semiconductor device manufacturing apparatus in which a photoresist coated on a wafer is developed into a desired pattern using a developer, a development stage is provided with a flat surface facing the photoresist surface of the wafer, and the flat surface of the development stage is A semiconductor device manufacturing apparatus characterized in that a plurality of processing liquid discharge ports are formed.