JPH04164384A - Hybrid integrated circuit for electric power - Google Patents
Hybrid integrated circuit for electric powerInfo
- Publication number
- JPH04164384A JPH04164384A JP29157090A JP29157090A JPH04164384A JP H04164384 A JPH04164384 A JP H04164384A JP 29157090 A JP29157090 A JP 29157090A JP 29157090 A JP29157090 A JP 29157090A JP H04164384 A JPH04164384 A JP H04164384A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- hybrid integrated
- electric power
- integrated circuit
- wiring board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000004593 Epoxy Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、電力用混成集積回路に関し、特に電力用回路
の実装構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a power hybrid integrated circuit, and particularly to a mounting structure of a power circuit.
従来の電力用混成集積回路としては、第4図の断面図に
示されるようなプリント配線板ICの上に放熱性を改善
するためのビートシンク7を介して、電力素子5を実装
する構造が一般的であった。A conventional power hybrid integrated circuit has a structure in which a power element 5 is mounted on a printed wiring board IC via a beat sink 7 to improve heat dissipation, as shown in the cross-sectional view of FIG. It was common.
上述した従来の実装方法では、プリント基板上に電力素
子を搭載するために、大きなヒートシンクを必要とし、
高密度実装を求められる混成集積回路では不利となって
いた。The conventional mounting method described above requires a large heat sink to mount power devices on a printed circuit board.
This was a disadvantage for hybrid integrated circuits that require high-density packaging.
本発明の目的は、このような問題を解決し、電力素子を
ペアチップで使用するに際し、特別のヒートシンクを必
要とせず、更に全体のベースとなるAl基板Cu化処理
することにより、電力素子の裏面処理が、容易にはんだ
付けによりダイボンディングされるようにした電力用混
成集積回路を提供することにある。The purpose of the present invention is to solve such problems and eliminate the need for a special heat sink when power elements are used as a pair of chips, and furthermore, by processing the Al substrate that serves as the entire base to Cu, the back side of the power element can be The object of the present invention is to provide a power hybrid integrated circuit which can be easily die-bonded by soldering.
本発明の電力用混成集積回路の構成は、Afl板の表面
をCu化処理したベース基板と、このベース基板上にそ
れぞれ配設された電力素子部分および制御回路部分を搭
載した多層のガラスエボキシ基板および電力素子部分と
を備え、これらを一体化構成とすることを特徴とする。The configuration of the power hybrid integrated circuit of the present invention includes a base substrate in which the surface of an Afl board is treated with Cu, and a multilayer glass epoxy substrate on which a power element portion and a control circuit portion are respectively disposed on the base substrate. and a power element portion, and is characterized by having an integrated configuration.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は本発明の一実施例の断面図である。図において
、AJ2基板1はそのA、R表面をカッパライズ処理し
てCu化した領域2としている。また、制御回路用の多
層プリント配線板3は、制御用IC4を搭載している。FIG. 1 is a sectional view of an embodiment of the present invention. In the figure, the AJ2 substrate 1 has regions 2 in which the A and R surfaces thereof are subjected to a copperization process to become Cu. Moreover, the multilayer printed wiring board 3 for the control circuit is equipped with a control IC 4.
また、電力素子5は、A1基板1へそのペアチップが直
接ボンデインクされている。この構造によれば、ペアチ
ップが直接ベースのAl基板1のCu表面領域2にはん
だ付けされるため、小型で熱伝達の良い実装構造が可能
である。Further, the power element 5 has its paired chips directly bonded to the A1 substrate 1. According to this structure, since the paired chips are directly soldered to the Cu surface region 2 of the base Al substrate 1, a compact mounting structure with good heat transfer is possible.
第2図は本発明の第2の実施例の縦断面図である。この
場合、Affl基板1aは、制御回路となる多層プリン
ト配線板3aが両面実装形式となっているため、部分的
にミーリングが施されている。FIG. 2 is a longitudinal sectional view of a second embodiment of the invention. In this case, the Affl board 1a is partially milled because the multilayer printed wiring board 3a serving as the control circuit is mounted on both sides.
第3図は本発明の第3の実施例の断面図である。この場
合、Al基板1が電力素子5の極性の違いにより、基板
1a、lbと絶縁分離されている。この場合、回路全体
は樹脂ゲース6によって1体化されている。FIG. 3 is a sectional view of a third embodiment of the invention. In this case, the Al substrate 1 is insulated and separated from the substrates 1a and lb due to the difference in polarity of the power element 5. In this case, the entire circuit is integrated by a resin gate 6.
この構造によれば、極性の異る素子や、プロセスの異る
素子等も自由に選択出来る。According to this structure, elements with different polarities, elements with different processes, etc. can be freely selected.
以上説明したように本発明は、Al基板をベースとして
も、表面をカッパライズ処理することにより、高い放熱
性が得られ、そのために、小型の電力用混成集積回路を
容易に実現出来るという効果がある。As explained above, the present invention has the effect that even if an Al substrate is used as a base, high heat dissipation properties can be obtained by coating the surface with copperization treatment, and therefore, a compact power hybrid integrated circuit can be easily realized. be.
第1図、第2図および第3図は本発明の第1゜第2おj
び第3の実施例の断面図、第4図は従来の電力用混成集
積ml路を一例の断面図である。
1、la、lb・・・AJI基板、1c・・・プリント
配線板、2・・・Cu表面(Al基板)領域、3,3a
・・・多層プリント配線板、4・・・制御ICl3・・
・電力素子、6・・・樹脂ケース、7・・・ヒートシン
ク、8・・・ボンディングワイヤ。FIGS. 1, 2, and 3 show the first and second parts of the present invention.
FIG. 4 is a cross-sectional view of an example of a conventional power hybrid integrated ML path. 1, la, lb... AJI board, 1c... printed wiring board, 2... Cu surface (Al substrate) region, 3, 3a
...Multilayer printed wiring board, 4...Control ICl3...
- Power element, 6... Resin case, 7... Heat sink, 8... Bonding wire.
Claims (1)
ース基板上にそれぞれ配設された電力素子部分および制
御回路部分を搭載した多層のガラスエポキシ基板および
電力素子部分とを備え、これらを一体化構成とすること
を特徴とする電力用混成集積回路。It is equipped with a base substrate in which the surface of an Al plate is treated with Cu, and a multilayer glass epoxy substrate and a power element portion each having a power element portion and a control circuit portion disposed on this base substrate, and these are integrated. 1. A power hybrid integrated circuit characterized by having the following configuration.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29157090A JPH04164384A (en) | 1990-10-29 | 1990-10-29 | Hybrid integrated circuit for electric power |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29157090A JPH04164384A (en) | 1990-10-29 | 1990-10-29 | Hybrid integrated circuit for electric power |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04164384A true JPH04164384A (en) | 1992-06-10 |
Family
ID=17770636
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP29157090A Pending JPH04164384A (en) | 1990-10-29 | 1990-10-29 | Hybrid integrated circuit for electric power |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04164384A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0493159U (en) * | 1990-12-21 | 1992-08-13 | ||
JPH0567727A (en) * | 1991-09-06 | 1993-03-19 | Sansha Electric Mfg Co Ltd | Circuit board for semiconductor device |
JPH06244303A (en) * | 1993-01-27 | 1994-09-02 | Internatl Business Mach Corp <Ibm> | Temperature-controllable microminiature electronic package |
JPH11307720A (en) * | 1998-04-21 | 1999-11-05 | Toyota Autom Loom Works Ltd | Semiconductor device |
KR100400628B1 (en) * | 2000-10-05 | 2003-10-04 | 산요덴키가부시키가이샤 | Heat-dissipating substrate and semiconductor module |
AT512525B1 (en) * | 2012-05-04 | 2013-09-15 | Mikroelektronik Ges Mit Beschraenkter Haftung Ab | Printed circuit board, in particular for a power electronics module, comprising an electrically conductive substrate |
-
1990
- 1990-10-29 JP JP29157090A patent/JPH04164384A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0493159U (en) * | 1990-12-21 | 1992-08-13 | ||
JPH0567727A (en) * | 1991-09-06 | 1993-03-19 | Sansha Electric Mfg Co Ltd | Circuit board for semiconductor device |
JPH06244303A (en) * | 1993-01-27 | 1994-09-02 | Internatl Business Mach Corp <Ibm> | Temperature-controllable microminiature electronic package |
JP2531497B2 (en) * | 1993-01-27 | 1996-09-04 | インターナショナル・ビジネス・マシーンズ・コーポレイション | Ultra-small electronic package with temperature control |
JPH11307720A (en) * | 1998-04-21 | 1999-11-05 | Toyota Autom Loom Works Ltd | Semiconductor device |
KR100400628B1 (en) * | 2000-10-05 | 2003-10-04 | 산요덴키가부시키가이샤 | Heat-dissipating substrate and semiconductor module |
AT512525B1 (en) * | 2012-05-04 | 2013-09-15 | Mikroelektronik Ges Mit Beschraenkter Haftung Ab | Printed circuit board, in particular for a power electronics module, comprising an electrically conductive substrate |
AT512525A4 (en) * | 2012-05-04 | 2013-09-15 | Mikroelektronik Ges Mit Beschraenkter Haftung Ab | Printed circuit board, in particular for a power electronics module, comprising an electrically conductive substrate |
US9648736B2 (en) | 2012-05-04 | 2017-05-09 | A.B. Mikroelektronik Gesellschaft Mit Beschraenkter Haftung | Circuit board, particularly for a power-electronic module, comprising an electrically-conductive substrate |
US10091874B2 (en) | 2012-05-04 | 2018-10-02 | Ab Mikroelektronik Gesellschaft Mit Beschraenkter Haftung | Circuit board, particulary for a power-electronic module, comprising an electrically-conductive substrate |
EP2845453B1 (en) * | 2012-05-04 | 2019-06-12 | A.B. Mikroelektronik Gesellschaft mit beschränkter Haftung | Circuit board, particularly for a power-electronic module, comprising an electrically-conductive substrate |
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