JPH04163910A - Semiconductor thin film production method - Google Patents

Semiconductor thin film production method

Info

Publication number
JPH04163910A
JPH04163910A JP29125590A JP29125590A JPH04163910A JP H04163910 A JPH04163910 A JP H04163910A JP 29125590 A JP29125590 A JP 29125590A JP 29125590 A JP29125590 A JP 29125590A JP H04163910 A JPH04163910 A JP H04163910A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
si
gas
thin film
phase growth
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP29125590A
Other versions
JP3203652B2 (en )
Inventor
Masabumi Kunii
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

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Abstract

PURPOSE: To prepare poly-Si with a large particle diameter and low resistance in a short anneal period of time by using a mixed gas which consists of forma tion gas of an amorphous semiconductor film whose main component is silicon diluted with helium.
CONSTITUTION: An amorphous or polycrystalline Si thin film with a thickness of about 1,000-1,500Å is formed on a quartz substrate 300 by PCVD or reduced pressure vapor phase growth. After this Si thin film is etched to the pattern for the TFT channel region 301, particle diameter is increased by solid phase growth and laser annealing. In order to perform this solid phase growth and anneal process and create poly-Si with particle diameters of a few microns, a mixed gas that consist of the formation gas SiH4 and He gas with the following proportion, (SiH4)/(He)=5-20%. The internal pressure is 0.8 Torr, the rf frequency is 13.56MHz, and the power density is 30-100mW/cm2. By annealing the a-Si film formed under these conditions in a 600°C N2 gas, the film can be transformed to poly-Si.
COPYRIGHT: (C)1992,JPO&Japio
JP29125590A 1990-10-29 1990-10-29 The method of manufacturing a semiconductor thin film Expired - Lifetime JP3203652B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29125590A JP3203652B2 (en) 1990-10-29 1990-10-29 The method of manufacturing a semiconductor thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29125590A JP3203652B2 (en) 1990-10-29 1990-10-29 The method of manufacturing a semiconductor thin film

Publications (2)

Publication Number Publication Date
JPH04163910A true true JPH04163910A (en) 1992-06-09
JP3203652B2 JP3203652B2 (en) 2001-08-27

Family

ID=17766496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29125590A Expired - Lifetime JP3203652B2 (en) 1990-10-29 1990-10-29 The method of manufacturing a semiconductor thin film

Country Status (1)

Country Link
JP (1) JP3203652B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6635900B1 (en) 1995-06-01 2003-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film having a single-crystal like region with no grain boundary
US7238557B2 (en) 2001-11-14 2007-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US7503975B2 (en) * 2000-06-27 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method therefor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6635900B1 (en) 1995-06-01 2003-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film having a single-crystal like region with no grain boundary
US7503975B2 (en) * 2000-06-27 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method therefor
US7238557B2 (en) 2001-11-14 2007-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US7834356B2 (en) 2001-11-14 2010-11-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US8043905B2 (en) 2001-11-14 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same

Also Published As

Publication number Publication date Type
JP3203652B2 (en) 2001-08-27 grant

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