JPH04162639A - Nail head bing method - Google Patents

Nail head bing method

Info

Publication number
JPH04162639A
JPH04162639A JP2289739A JP28973990A JPH04162639A JP H04162639 A JPH04162639 A JP H04162639A JP 2289739 A JP2289739 A JP 2289739A JP 28973990 A JP28973990 A JP 28973990A JP H04162639 A JPH04162639 A JP H04162639A
Authority
JP
Japan
Prior art keywords
bonding
capillary
center
point
nail head
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2289739A
Other languages
Japanese (ja)
Other versions
JP2853314B2 (en
Inventor
Hisanori Yamashita
尚徳 山下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2289739A priority Critical patent/JP2853314B2/en
Publication of JPH04162639A publication Critical patent/JPH04162639A/en
Application granted granted Critical
Publication of JP2853314B2 publication Critical patent/JP2853314B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To increase bonding yield by performing second bonding in the direction of a line connecting between first and second bonding points, permitting the center of a capillary to be displaced from the second bonding point. CONSTITUTION:First bonding (ball bonding) is performed to a pad 1a of a pellet 2a mounted on an island 4a of a package. Second bonding is performed by positioning 7a of the capillary is located at a location displaced by a radius (r) of the capillary from a predetermined position on a.5 stitch 5a in the direction of a line connecting between the first and second bonding points. A junction center 6a coincides with the second bonding point. There are avoided difficulties such as stitch disengagement, bonding failure, and unsatisfactory loop shape, etc.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置のボンディング方法に関し、特にネ
イルヘッドボンディング方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a bonding method for semiconductor devices, and particularly to a nail head bonding method.

〔従来の技術〕[Conventional technology]

ボンディング技術では、ネイルヘッドボールボンディン
グ技術が主流である。Nail head ball bonding technology is the mainstream bonding technology.

上述したようなボンディング技術では、第１ボンディン
グ即ちポールボンディングの座標（第１ボンディング点
）と第２ボンディング即ちネイルヘッドボンディングの
座標（第２ボンディング点）とを設定してボンディング
が行なわれている。第１ボンディング側の座標は、例え
ばベレット上であり、パッドの中心に設定される。第２
ボンディング側の座標は例えばインナーリード上であり
、インナーリードの幅の中心でかつインナーリードの先
端から０．４ｍｍ程のところに設定される。In the above-described bonding technique, bonding is performed by setting the coordinates (first bonding point) of the first bonding, that is, the pole bonding, and the coordinates (second bonding point) of the second bonding, that is, the nail head bonding. The coordinates on the first bonding side are, for example, on the bullet and set at the center of the pad. Second
The bonding side coordinates are, for example, on the inner lead, and are set at the center of the width of the inner lead and about 0.4 mm from the tip of the inner lead.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来のボンディング技術では、第２ボンディングのネイ
ルヘッドボンディングで、ワイヤーの進入角が異なって
きても、第２ボンディング側の座標は第２ボンディング
の被ボンディング体の幅の中心でかつ、被ボンディング
体の端から０．４ｍｍ程度のところに設定される。その
ためワイヤーの進入角が異なっていても、同じ座標でボ
ンディングされる。In the conventional bonding technology, even if the entrance angle of the wire is different in the nail head bonding of the second bonding, the coordinates on the second bonding side are the center of the width of the object to be bonded in the second bonding and the coordinates of the object to be bonded are It is set at about 0.4 mm from the edge. Therefore, even if the wire approach angles are different, bonding is performed at the same coordinates.

そうして、第２ボンディング点にはキャピラリーの中心
を位置させるのである。しかし、第４図に示すように、
実際にボンディングされるワイヤ接合部センタ１０はキ
ャピラリの中心９からキャピラリー半径ｒだけずれる。The center of the capillary is then located at the second bonding point. However, as shown in Figure 4,
The wire joint center 10 to be actually bonded is shifted from the capillary center 9 by the capillary radius r.

従って、第３図に示すように、ワイヤ進入角θが大きく
なってくると、接合部センタ６の位置は被ボンディング
体であるステッチ５の中心線（その中心線上にキャピラ
リーの位置７がくる）からのずれが大きくなる。よって
、ステッチはずれ、ボンディング不着、ワイヤーの支え
部分が十分にとれないために起こるループ形状不良の不
具合が生じ、ボンディング歩留りを低下させるという問
題点がある。Therefore, as shown in FIG. 3, as the wire approach angle θ increases, the position of the bonding center 6 changes to the center line of the stitch 5, which is the object to be bonded (the position 7 of the capillary is on the center line). The deviation from Therefore, there are problems such as misalignment of stitches, non-adherence of bonding, and defective loop shapes caused by insufficient support of the wire, resulting in a reduction in bonding yield.

〔課題を解決するための手段〕[Means to solve the problem]

本発明のネイルヘッドボンディング方法は、第１ボンデ
ィング終了後、第１ボンディング点と第２ボンディング
点とを結ぶ線方向にキャピラリー半径だけ前記第２ボン
ディング点からずらした位置にキャピラリーの中心を位
置させて第２ボンディングを行なう。In the nail head bonding method of the present invention, after the first bonding is completed, the center of the capillary is positioned at a position shifted from the second bonding point by the capillary radius in the direction of a line connecting the first bonding point and the second bonding point. Perform second bonding.

〔実施例〕〔Example〕

次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第１図は本発明の一実施例を説明するための平面図であ
る。FIG. 1 is a plan view for explaining one embodiment of the present invention.

図示しないパッケージのアイランド４ａに搭載されたベ
レット２ａのパッド１ａに第１ボンディング（ポールボ
ンディング）を行なうのは従来例と同様である。次に、
ステッチ５ａ上の所定位置（第２ボンディング点）から
、第１ボンディング点と第２ボンディング点を結ぶ直線
方向に、キャピラリー半径ｒだけずらした位置にキャピ
ラリーの中心位置７ａがくるようにキャピラリーの位置
を定めて第２ボンディングを行なう。そうすると接合部
センタ６ａは第２ボンディング点と一致する、従って、
ステッチはずれ、ボンディング不着、ループ形状不良な
どの不具合はほとんど発生しない。As in the conventional example, first bonding (pole bonding) is performed on the pad 1a of the pellet 2a mounted on the island 4a of the package (not shown). next,
The capillary is positioned so that the center position 7a of the capillary is shifted from a predetermined position (second bonding point) on the stitch 5a by the capillary radius r in the straight line direction connecting the first bonding point and the second bonding point. Then, the second bonding is performed. Then, the joint center 6a coincides with the second bonding point, therefore,
Problems such as misaligned stitches, non-adherence of bonding, and poor loop shape rarely occur.

この手法は、ベレットからベレットへのワイヤボンディ
ングにも適用しうる。すなわち、第２図に示すように、
ベレット２ｂｌのパッドｌｂｌへ第１ボンディングを行
ない、次にベレット２ｂ２のパッド１ｂ２のボンディン
グ点からキャピラリー半径ｒだけずれた位置をキャピラ
リーの中心位置７ｂとしてボンディングすればよいので
ある。This technique can also be applied to bullet-to-vellet wire bonding. That is, as shown in Figure 2,
The first bonding is performed to the pad lbl of the pellet 2bl, and then the bonding is performed by setting the capillary center position 7b at a position shifted by the capillary radius r from the bonding point of the pad 1b2 of the pellet 2b2.

パッドの大きさは、ステッチの幅より小さいのが普通で
あるので、本発明の適用による前述のような不具合発生
の防止の効果は一層顕著である。Since the size of the pad is usually smaller than the width of the stitch, the effect of preventing the above-mentioned problems by applying the present invention is even more remarkable.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、第２ボンディング
のワイヤの接合部分が最適ボンディングと一致するよう
にボンディングされるので、ボンディング不着が少なく
なり、ボンディング歩留が上がるという効果がある。さ
らに、ベレットからベレットへのボンディングでは、パ
ッドが小さいにもかかわらずボンディング不着が少なく
なりボンディング歩留が上がるという効果がある。また
、ワイヤ接合部分とインナーリード端の距離が確保され
るなめワイヤー垂れも少なくなりこれもまたボンディン
グ歩留向上に寄与する。As described above, according to the present invention, bonding is performed so that the bonded portion of the wire in the second bonding matches the optimum bonding, so that there is an effect that bonding failures are reduced and the bonding yield is increased. Furthermore, in bullet-to-vellet bonding, there is an effect that bonding failures are reduced and the bonding yield is increased despite the small pad size. Furthermore, since the distance between the wire bonding portion and the inner lead end is ensured, wire sagging is also reduced, which also contributes to improving the bonding yield.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の一実施例を説明するための平面図、第
２図は一実施例の変形を説明するための平面図、第３図
は従来技術の欠点を説明するための平面図、第４図は第
２ボンディングの様子を説明するための断面図である。 １、ｌａ、ｌｂｌ、１ｂ２・−パッド、２．２ａ、２ｂ
ｌ、２ｂ２−−・チップ、３．３ａ、３ｂ・・−ワイヤ
、４，４ａ・・・アイランド、５，５ａ・・・ステッチ
、６．６ａ、６ｂ・・−接合部センタ、７，７ａ、７ｂ
・・・キャピラリーの中心位置、８・・・キャピラリー
、９・・・キャピラリーの中心、１０・・・ワイヤ接合
部センタ、１１・・・被ボンディング体。FIG. 1 is a plan view for explaining an embodiment of the present invention, FIG. 2 is a plan view for explaining a modification of the embodiment, and FIG. 3 is a plan view for explaining the drawbacks of the prior art. , FIG. 4 is a sectional view for explaining the state of the second bonding. 1, la, lbl, 1b2・-pad, 2.2a, 2b
l, 2b2--chip, 3.3a, 3b...-wire, 4,4a...island, 5,5a...stitch, 6.6a, 6b...-junction center, 7,7a, 7b
... Center position of the capillary, 8 ... Capillary, 9 ... Center of the capillary, 10 ... Wire joint center, 11 ... Bonded object.

Claims (1)

【特許請求の範囲】[Claims] 　第１ボンディング終了後、第１ボンディング点と第２
ボンディング点とを結ぶ線方向にキャピラリー半径だけ
前記第２ボンディング点からずらした位置にキャピラリ
ーの中心を位置させて第２ボンディングを行なうことを
特徴とするネイルヘッドボンディング方法。After the first bonding is completed, the first bonding point and the second
A nail head bonding method comprising performing second bonding by positioning the center of the capillary at a position shifted from the second bonding point by the radius of the capillary in the direction of a line connecting the bonding point.
JP2289739A 1990-10-25 1990-10-25 Nail head bonding method Expired - Fee Related JP2853314B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2289739A JP2853314B2 (en) 1990-10-25 1990-10-25 Nail head bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2289739A JP2853314B2 (en) 1990-10-25 1990-10-25 Nail head bonding method

Publications (2)

Publication Number Publication Date
JPH04162639A true JPH04162639A (en) 1992-06-08
JP2853314B2 JP2853314B2 (en) 1999-02-03

Family

ID=17747133

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2289739A Expired - Fee Related JP2853314B2 (en) 1990-10-25 1990-10-25 Nail head bonding method

Country Status (1)

Country Link
JP (1) JP2853314B2 (en)

Also Published As

Publication number Publication date
JP2853314B2 (en) 1999-02-03

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