JPH04159725A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH04159725A JPH04159725A JP28486090A JP28486090A JPH04159725A JP H04159725 A JPH04159725 A JP H04159725A JP 28486090 A JP28486090 A JP 28486090A JP 28486090 A JP28486090 A JP 28486090A JP H04159725 A JPH04159725 A JP H04159725A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gate electrode
- silicon nitride
- nitride film
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N HF Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- -1 arsenic ions Chemical class 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Abstract
PURPOSE: To realize a margin-free process by covering a gate electrode with an insulating film, and depositing silicon oxide as an inner insulating film.
CONSTITUTION: A first silicon nitride film 5 and a gate polysilicon film 10 are patterned to form a mask, through which arsenic ions are implanted to form an n-type diffused layer 6. After a gate oxide 3 is removed with the silicon nitride film 5 and a gate electrode 4 used as mask, a second silicon nitride film 7 is deposited on a substrate 1. Then, the film 7 is removed in such a manner that it stays the side walls of the gate electrode 4. A silicon oxide is deposited as an inner insulating layer 8, and a window for a contact hole 12 is opened in it after a photoresist film 11 is applied. The insulating film 8 is etched with buffered hydrofluoric acid to form a contact hole, before a wiring layer 9 is formed by a conventional process. This realizes a margin-free process.
COPYRIGHT: (C)1992,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28486090A JPH04159725A (en) | 1990-10-23 | 1990-10-23 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28486090A JPH04159725A (en) | 1990-10-23 | 1990-10-23 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04159725A true JPH04159725A (en) | 1992-06-02 |
Family
ID=17683966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28486090A Pending JPH04159725A (en) | 1990-10-23 | 1990-10-23 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04159725A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100422819B1 (en) * | 1997-06-30 | 2004-05-24 | 주식회사 하이닉스반도체 | Method for fabricating semiconductor device |
| US6962853B2 (en) | 2000-01-20 | 2005-11-08 | Matsushita Electronic Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
-
1990
- 1990-10-23 JP JP28486090A patent/JPH04159725A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100422819B1 (en) * | 1997-06-30 | 2004-05-24 | 주식회사 하이닉스반도체 | Method for fabricating semiconductor device |
| US6962853B2 (en) | 2000-01-20 | 2005-11-08 | Matsushita Electronic Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
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