JPH03219677A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH03219677A
JPH03219677A JP2014693A JP1469390A JPH03219677A JP H03219677 A JPH03219677 A JP H03219677A JP 2014693 A JP2014693 A JP 2014693A JP 1469390 A JP1469390 A JP 1469390A JP H03219677 A JPH03219677 A JP H03219677A
Authority
JP
Japan
Prior art keywords
si
formed
film
source
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014693A
Inventor
Makoto Nakamura
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2014693A priority Critical patent/JPH03219677A/en
Publication of JPH03219677A publication Critical patent/JPH03219677A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To enable a source/drain contact to be formed easily by providing a recessed part on a semiconductor substrate, a gate electrode with a round lower-part peripheral edge at the recessed part, and then a source and a drain regions on the surface of the semiconductor substrate.
CONSTITUTION: An opening is formed by coating an Si3N4 film 12 on an Si substrate 11. The Si substrate 11 is subjected to anisotropic dry etching with the Si3N4 film 12 as an etching mask. Then, with the Si3N4 film 12 as an etching mask, the Si substrate 11 is further subjected to wet etching, thus forming a recessed part whose bottom part is no flat. After that, the Si3N4 film 12 which is used as an etching mask is eliminated and an SiO2 film 13 for a gate is formed by thermal oxidation. Then, a poly Si film 14 and a tungsten polycide is laminated, patterning is made, and then a gate electrode is formed within the previously formed recess. After that, after a source/drain diffusion layer is formed by ion-implantation, an MOS semiconductor integrated circuit is formed.
COPYRIGHT: (C)1991,JPO&Japio
JP2014693A 1990-01-24 1990-01-24 Semiconductor device Pending JPH03219677A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014693A JPH03219677A (en) 1990-01-24 1990-01-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014693A JPH03219677A (en) 1990-01-24 1990-01-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH03219677A true JPH03219677A (en) 1991-09-27

Family

ID=11868271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014693A Pending JPH03219677A (en) 1990-01-24 1990-01-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH03219677A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5612546A (en) * 1994-12-22 1997-03-18 Goldstar Electron Co., Ltd. Thin film transistor structure
JP2003023104A (en) * 2001-07-06 2003-01-24 Sony Corp Semiconductor device and manufacturing method therefor
US6674123B2 (en) * 1997-09-10 2004-01-06 Samsung Electronics Co., Ltd. MOS control diode and method for manufacturing the same
US6710401B2 (en) 1994-02-04 2004-03-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including a trench with at least one of an edge of an opening and a bottom surface being round
US7015543B2 (en) 2001-07-10 2006-03-21 Sony Corporation Trench-gate semiconductor device and fabrication method thereof
JP2006339476A (en) * 2005-06-03 2006-12-14 Elpida Memory Inc Semiconductor device and manufacturing method thereof
JP2008511996A (en) * 2004-09-01 2008-04-17 マイクロン テクノロジー, インク. A method of forming a semiconductor structure and a transistor, and the semiconductor structure and the transistor
JP2009049137A (en) * 2007-08-17 2009-03-05 Spansion Llc Semiconductor device and manufacturing method therefor
JP2012033939A (en) * 2003-09-17 2012-02-16 Micron Technology Inc Dram access transistor and method for forming the same
US8877589B2 (en) 2005-08-30 2014-11-04 Micron Technology, Inc. Methods of forming field effect transistors on substrates
US8916912B2 (en) 2005-07-08 2014-12-23 Micron Technology, Inc. Semiconductor device comprising a transistor gate having multiple vertically oriented sidewalls
US9129847B2 (en) 2006-07-17 2015-09-08 Micron Technology, Inc. Transistor structures and integrated circuitry comprising an array of transistor structures

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6710401B2 (en) 1994-02-04 2004-03-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including a trench with at least one of an edge of an opening and a bottom surface being round
US7067874B2 (en) 1994-02-04 2006-06-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including trench with at least one of an edge of an opening and a bottom surface being round
US5612546A (en) * 1994-12-22 1997-03-18 Goldstar Electron Co., Ltd. Thin film transistor structure
US6674123B2 (en) * 1997-09-10 2004-01-06 Samsung Electronics Co., Ltd. MOS control diode and method for manufacturing the same
JP2003023104A (en) * 2001-07-06 2003-01-24 Sony Corp Semiconductor device and manufacturing method therefor
US7015543B2 (en) 2001-07-10 2006-03-21 Sony Corporation Trench-gate semiconductor device and fabrication method thereof
JP2012033939A (en) * 2003-09-17 2012-02-16 Micron Technology Inc Dram access transistor and method for forming the same
JP2008511996A (en) * 2004-09-01 2008-04-17 マイクロン テクノロジー, インク. A method of forming a semiconductor structure and a transistor, and the semiconductor structure and the transistor
JP2006339476A (en) * 2005-06-03 2006-12-14 Elpida Memory Inc Semiconductor device and manufacturing method thereof
US8916912B2 (en) 2005-07-08 2014-12-23 Micron Technology, Inc. Semiconductor device comprising a transistor gate having multiple vertically oriented sidewalls
US9536971B2 (en) 2005-07-08 2017-01-03 Micron Technology, Inc. Semiconductor device comprising a transistor gate having multiple vertically oriented sidewalls
US8877589B2 (en) 2005-08-30 2014-11-04 Micron Technology, Inc. Methods of forming field effect transistors on substrates
US9129847B2 (en) 2006-07-17 2015-09-08 Micron Technology, Inc. Transistor structures and integrated circuitry comprising an array of transistor structures
JP2009049137A (en) * 2007-08-17 2009-03-05 Spansion Llc Semiconductor device and manufacturing method therefor

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