JPH04143640A - Apparatus for inspecting foreign matter - Google Patents

Apparatus for inspecting foreign matter

Info

Publication number
JPH04143640A
JPH04143640A JP19791190A JP19791190A JPH04143640A JP H04143640 A JPH04143640 A JP H04143640A JP 19791190 A JP19791190 A JP 19791190A JP 19791190 A JP19791190 A JP 19791190A JP H04143640 A JPH04143640 A JP H04143640A
Authority
JP
Japan
Prior art keywords
foreign matter
prevention film
adhesion prevention
light
matter adhesion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19791190A
Other languages
Japanese (ja)
Other versions
JPH0711492B2 (en
Inventor
Yukio Uto
幸雄 宇都
Masataka Shiba
正孝 芝
Yoshitada Oshida
良忠 押田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2197911A priority Critical patent/JPH0711492B2/en
Publication of JPH04143640A publication Critical patent/JPH04143640A/en
Publication of JPH0711492B2 publication Critical patent/JPH0711492B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To enhance the yield in an exposure process by receiving the scattering beam from foreign matter by an optical detection system passing through the center of the beam irradiating a foreign matter adhesion preventing film and arranged so as to form a specific angle to said light. CONSTITUTION:The laser beam from a laser oscillator 14 is totally reflected by a reciprocally rotating and vibrating glavano-mirror 17 to be incident on the surface of a foreign matter adhesion preventing film 23 as a laser spot through a collimator lens 18 in an oblique direction. A detection means consisting of an image forming lens 26 and a photoelectric converter 27 is provided so as to observe scanning beam 22 in an oblique upper direction and the laser spot image on the scanning beam 22 is formed on the converter 27 and, when there is foreign matter 20, the scattering beam 21 therefrom is detected. Then, the surface of the film 23 is scanned over the entire region thereof while a glass substrate 39 is sent in a Y-direction. By this method, the yield in an exposure process can be enhanced.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、縮小投影露光装置や1:1反射形投影露光装
置を用いた露光工程において、露光に使用するレチクル
やフォトマスク等の基板に異物付着防止膜を付けた枠を
装着した状態で異物付着防止膜上に付着した露光に支障
のある大きな異物を検査して半導体素子等の歩留り低下
を防止するようにした異物検査装置に関する。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention is applicable to substrates such as reticles and photomasks used for exposure in an exposure process using a reduction projection exposure apparatus or a 1:1 reflective projection exposure apparatus. This foreign matter inspection device prevents a decrease in the yield of semiconductor devices, etc. by inspecting large foreign matter that interferes with exposure and has adhered to the foreign matter adhesion prevention film while a frame with the foreign matter adhesion prevention film is mounted.

〔従来の技術〕[Conventional technology]

例えば縮小投影露光装置(以下RAと略記)では、レチ
クルやホトマスク等の基板上に形成された回路パターン
を縮/IXシてウェハ上に転写して1チツプずつ露光す
るため、基板上に異物が存在するとその異物像が転写さ
れ、ウェハ上の全チップが不良となる。従って、露光前
の基板上の異物検査が露光工程の歩留りを向上させる上
で不可欠である。この種の装置として関連するものには
例えば、特開昭57−80546号、特開昭58−79
240号、特開昭59〜82727号等が挙げられる。
For example, in a reduction projection exposure apparatus (hereinafter abbreviated as RA), a circuit pattern formed on a substrate such as a reticle or photomask is reduced/IXed, transferred onto a wafer, and exposed one chip at a time. If present, the foreign object image will be transferred and all chips on the wafer will be defective. Therefore, inspection of foreign substances on the substrate before exposure is essential for improving the yield of the exposure process. Related devices of this type include, for example, JP-A-57-80546 and JP-A-58-79.
No. 240, JP-A-59-82727, and the like.

これらの装置をRAに内蔵する場合、高価な装置なため
、多数のRAを必要とする大量生産ラインでは投資の面
で膨大な費用がかかる。
If these devices are built into the RA, they are expensive devices, and a large amount of investment will be required in a mass production line that requires a large number of RAs.

一方、最近では、基板表面に直接異物が付着しない様に
、異物付着防止用のべIJクル(金属の枠に二1−口セ
ルローズの透明薄膜を貼り付けたもの)を装着している
。異物付着防止膜を基板に装着した後は原則として、基
板上への新しい異物の付着は防止できる。また、異物付
着防止膜と基板の表面は離間しているため、比較的小さ
な異物が異物付着防止膜上に存在しても異物像はウェハ
上に転写されない。従って異物付着防止膜を用いた場合
の基板洗浄から露光までの工程は以下の様になる。
On the other hand, recently, in order to prevent foreign matter from directly adhering to the surface of the substrate, an IJ shell (a transparent thin film of 21-hole cellulose pasted on a metal frame) has been installed to prevent foreign matter from adhering to the substrate surface. After the foreign matter adhesion prevention film is attached to the substrate, in principle, new foreign matter can be prevented from adhering to the substrate. Further, since the foreign matter adhesion prevention film and the surface of the substrate are separated from each other, even if a relatively small foreign matter exists on the foreign matter adhesion prevention film, the foreign matter image is not transferred onto the wafer. Therefore, when a foreign matter adhesion prevention film is used, the steps from substrate cleaning to exposure are as follows.

先ず、基板を洗浄し、パターンの存在表面及び非存在表
面にごみ等の異物があるか否か検査する。ごみ等の異物
がなければ、治具利用により異物付着防止膜を装着する
。この異物付着防止膜は、パターンの存在面にも装着す
る。異物付着防止膜を貼りつけた後、基板の面上に異物
があるか否か特開昭59−82727の方式を用いて検
査をする。異物がなければカセットに収納し、縮小露光
装置に送り露光工程に入る。
First, the substrate is cleaned and inspected for foreign matter such as dust on the surface where the pattern is present and the surface where the pattern is not present. If there is no foreign matter such as dust, attach a foreign matter adhesion prevention film using a jig. This foreign matter adhesion prevention film is also attached to the surface where the pattern is present. After applying the foreign matter adhesion prevention film, the presence of foreign matter on the surface of the substrate is inspected using the method disclosed in Japanese Patent Laid-Open No. 59-82727. If there are no foreign objects, it is stored in a cassette and sent to a reduction exposure device for the exposure process.

異物付着防止膜を装着することにより、20ないし30
μm以下の膜上に付着した異物については無視すること
ができるため、歩留りを向上させることができた。
By installing a foreign matter adhesion prevention film, 20 to 30
Since foreign matter adhering to the film of .mu.m or less can be ignored, the yield can be improved.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

一般に異物付着の確率は異物寸法の2乗に反比例すると
されているため、20ないし30μm以上の異物付着確
率を完全に無視することはできない。従って、より一層
の歩留り向上を目指すためには、異物付着防止膜上の比
較的大きな異物の有無を検査する必要がでてきた。
It is generally believed that the probability of foreign matter adhesion is inversely proportional to the square of the foreign matter size, so the probability of foreign matter adhesion of 20 to 30 μm or more cannot be completely ignored. Therefore, in order to further improve the yield, it has become necessary to inspect the presence or absence of relatively large foreign matter on the foreign matter adhesion prevention film.

本発明の目的は、基板に枠を介して装着した異物付着防
止膜上に付着した露光に支障のある大きな異物のみを検
査して露光工程における歩留りを一層向上するようにし
た異物検査装置を提供するにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a foreign matter inspection device that further improves the yield in the exposure process by inspecting only large foreign matter that interferes with exposure that has adhered to a foreign matter adhesion prevention film attached to a substrate via a frame. There is something to do.

〔課題を解決するための手段〕[Means to solve the problem]

即ち、本発明は、上記目的を達成するために、露光に使
用するレチクルやフォトマスク等の基板に異物付着防止
膜を付けた枠を装着した被検査対象物に対して、上記異
物付着防止膜上に光中心を通り、且つ異物付着防止膜を
通過した光による上記基板面上における光束とは交わら
ないように検出光軸を上記照射光束dに対して角度ψ≧
t a n−1d/ 2 t (但しtは基板表面と異
物付着防止膜との間の距離)で配置させて上記異物付着
防止膜上に付着した異物のみからの散乱光を光学的に検
出する検出光学系と、該検出光学系によって検出される
異物付着防止膜上に付着した異物のみからの散乱光を受
光して信号に変換する光電変換手段とを備えことを特徴
とする異物検査装置である。
That is, in order to achieve the above object, the present invention applies the foreign matter adhesion prevention film to an object to be inspected, which is equipped with a frame having a foreign matter adhesion prevention film attached to a substrate such as a reticle or a photomask used for exposure. The detection optical axis is set at an angle ψ≧ with respect to the irradiation light flux d so that it does not intersect with the light flux on the substrate surface caused by the light that passes through the optical center and passes through the foreign matter adhesion prevention film.
t a n-1d/2t (where t is the distance between the substrate surface and the foreign matter adhesion prevention film), and optically detects the scattered light from only the foreign matter adhering to the foreign matter adhesion prevention film. A foreign matter inspection device comprising a detection optical system and a photoelectric conversion means for receiving scattered light from only foreign matter adhering to a foreign matter adhesion prevention film detected by the detection optical system and converting it into a signal. be.

〔作用〕[Effect]

上記構成により、基板上に形成された回路パターンのエ
ツジから発生する散乱光を検出することなく異物付着防
止膜上に付着した露光に支障のある大きな異物のみを光
学的に検査することができ、露光等において半導体素子
等の大幅な歩留まり向上を達成することができる。
With the above configuration, it is possible to optically inspect only large foreign particles that have adhered to the foreign particle adhesion prevention film and interfere with exposure without detecting scattered light generated from the edges of the circuit pattern formed on the substrate. It is possible to significantly improve the yield of semiconductor devices and the like during exposure and the like.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明を第1図から第12図により説明する。 The present invention will be explained below with reference to FIGS. 1 to 12.

先ず異物付着防止膜上の異物検査装置を搭載した縮小投
影露光装置の一実施例の構成を第1図に示す。洗浄後、
異物が存在しない状態で、枠24を介して異物付着防止
膜23を装着した基板39は、カセットに入れた状態で
マガジン6に収納される。露光工程では基板はカセット
から1個ずつ取り出され露光後は再び元の位置に戻され
る。
First, FIG. 1 shows the structure of an embodiment of a reduction projection exposure apparatus equipped with a foreign matter inspection device on a foreign matter adhesion prevention film. After washing,
In the absence of any foreign matter, the substrate 39 with the foreign matter adhesion prevention film 23 mounted thereon via the frame 24 is stored in the magazine 6 in a cassette. In the exposure process, the substrates are taken out one by one from the cassette and returned to their original positions after exposure.

即ち、基板39はマガジン6内のカセットより矢印5a
の方向に引き出され、搬送アーム3により矢印4aの方
向に移動する。基板39の圃面に装着した異物付着防止
膜23上の異物検査は搬送アーム3の上下に設置した上
側異物検査装置1および下側異物検査装M2によって行
われる。もし、異物付着防止膜23上に異物(例えば2
0μm〜30μm以上)が存在すればその基板は元のカ
セットの戻され、異物除去が行なわれる。一方、異物が
存在しなければ、搬送アーム3は回転機8によって矢印
7aの方向に回転し、露光位置9に置かれ、露光光学系
10を介してウェハ11上に1チツプずづ転写される。
That is, the board 39 is moved from the cassette in the magazine 6 by the arrow 5a.
It is pulled out in the direction of arrow 4a and moved by the transport arm 3 in the direction of arrow 4a. Foreign matter inspection on the foreign matter adhesion prevention film 23 attached to the field surface of the substrate 39 is performed by the upper foreign matter inspection device 1 and the lower foreign matter inspection device M2 installed above and below the transfer arm 3. If foreign matter (for example, 2
If a foreign substance (0 μm to 30 μm or more) is present, the substrate is returned to its original cassette and the foreign matter is removed. On the other hand, if there is no foreign matter, the transfer arm 3 is rotated by the rotating machine 8 in the direction of the arrow 7a, placed at the exposure position 9, and transferred one chip at a time onto the wafer 11 via the exposure optical system 10. .

この基板を用いた露光工程が終了すると、基板39は再
びマガジン6内のカセットに収納される。
When the exposure process using this substrate is completed, the substrate 39 is again stored in the cassette within the magazine 6.

また、第2図は本発明の第2の実施例を示したものであ
る。ここで、基板39はモータ13で駆動される例えば
ベルト12を用いた搬送機構により搬送される。上記実
施例に用いる異物検査装置の一例を以下に説明する。
Further, FIG. 2 shows a second embodiment of the present invention. Here, the substrate 39 is transported by a transport mechanism using, for example, a belt 12 driven by a motor 13. An example of a foreign matter inspection device used in the above embodiment will be described below.

第3図は、フォトマスクやレチクル等の基板39に枠2
4を介し貼り付けた異物付着防止膜(ペリクル膜)23
表面上での異物を検出する装置を示したものである。こ
れによるとレーザ発振器14からのレーザ光は偏光板1
6、集光レンズ15を順次介された後、三角波状信号に
よって往復回転振動されているガルバノミラ−17で全
反射されたうえコリメータレンズ18を介し異物付着防
止膜23の表面上にレーザスポットとなって斜方向より
入射するようになっている。この場合、ガルバノミラ−
17は三角波状の電気信号で駆動され一定周期で回転振
動するためレーザスポットは異物付着防止膜23の表面
上をX方向に一定速度で往復走査するが、これにより直
線状の走査線22が形成されるものである。
FIG. 3 shows a frame 2 on a substrate 39 such as a photomask or reticle.
Foreign matter adhesion prevention film (pellicle film) 23 pasted through 4
1 shows an apparatus for detecting foreign objects on a surface. According to this, the laser beam from the laser oscillator 14 is transmitted to the polarizing plate 1
6. After successively passing through the condensing lens 15, the laser beam is totally reflected by the galvanometer mirror 17, which is vibrated in a reciprocating rotation by a triangular wave signal, and then passes through the collimator lens 18 to become a laser spot on the surface of the foreign matter adhesion prevention film 23. It is designed so that the light is incident from an oblique direction. In this case, the galvano mirror
Since the laser beam 17 is driven by a triangular wave-shaped electric signal and rotates and oscillates at a constant period, the laser spot scans back and forth in the X direction at a constant speed on the surface of the foreign matter adhesion prevention film 23, thereby forming a linear scanning line 22. It is something that will be done.

一方、異物20からの散乱光21を検出する手段は結像
レンズ26、遮光板(図示せず)、−次元のリニアセン
サ(CCD 、フォトダイオードアレイ等)を含む自己
走査蓄積形の光電変換素子27から成り、レーザスポッ
トの走査線22を斜上方よりのぞむように設けられてい
る。
On the other hand, the means for detecting the scattered light 21 from the foreign object 20 is a self-scanning accumulation type photoelectric conversion element including an imaging lens 26, a light shielding plate (not shown), and a -dimensional linear sensor (CCD, photodiode array, etc.). 27, and is provided so as to look at the scanning line 22 of the laser spot from diagonally above.

即ち、結像レンズ26によって異物付着防止膜23の表
面上を直線上に走査しているレーザスポットの走査線2
2の像が光電変換素子27上に結像されるようになって
いるものである。したがって、モータ48と送りネジ4
9によりガラス基板39を等速でY方向に随時送りなが
ら異物付着防止膜23表面をその全領域に亘って走査す
れば、走査線22上に異物20が存在する場合にはその
異物20からの散乱光21の強度が蓄積、検出されるも
のである。
That is, the scanning line 2 of the laser spot that is linearly scanned on the surface of the foreign matter adhesion prevention film 23 by the imaging lens 26
2 is formed on a photoelectric conversion element 27. Therefore, the motor 48 and the feed screw 4
9, if the surface of the foreign matter adhesion prevention film 23 is scanned over the entire area while moving the glass substrate 39 at a constant speed in the Y direction, if a foreign matter 20 is present on the scanning line 22, the foreign matter 20 will be removed. The intensity of the scattered light 21 is accumulated and detected.

ここで第4図によりレーザ光照射系について更に詳細に
説明すれば、レーザ発振器14からのレーザ光は偏光板
16を通過後(半導体レーザのような偏光レーザを用い
る場合には偏光板は不要)集光レンズ15によってガル
バノミラ−17の表面に集光されるが、このレーザ光は
ガルバノミラ−17の表面で全反射されたうえコリメー
タレンズ18に到達するようになっている。コリメータ
レンズ18はガルバノミラ−17の回転中心軸上にその
焦点が位置するように設置されていることから、コリメ
ータレンズ18を介されたレーザ光は平行光束となり、
ガルバノミラ−17の回転振動によって図示の如く方向
35に往復振動する結果、異物付着防止膜23の表面上
を直線状に往復走査することになるものである。この場
合コリメータレンズ18の焦点距離をf、レーザ光の振
れ角をθ、レーザスポットの走査量をhとすれば走査量
りは以下のように表わされる。
To explain the laser beam irradiation system in more detail with reference to FIG. 4, the laser beam from the laser oscillator 14 passes through a polarizing plate 16 (the polarizing plate is not necessary when using a polarizing laser such as a semiconductor laser). The laser beam is focused on the surface of the galvano mirror 17 by the condenser lens 15, but this laser light is totally reflected on the surface of the galvano mirror 17 and then reaches the collimator lens 18. Since the collimator lens 18 is installed so that its focal point is located on the rotation center axis of the galvanometer mirror 17, the laser beam passing through the collimator lens 18 becomes a parallel beam of light,
As a result of the rotational vibration of the galvanometer mirror 17, which vibrates back and forth in the direction 35 as shown, the surface of the foreign matter adhesion prevention film 23 is reciprocated in a linear manner. In this case, if the focal length of the collimator lens 18 is f, the deflection angle of the laser beam is θ, and the scanning amount of the laser spot is h, then the scanning amount is expressed as follows.

h=f−tanθHf−θ (θが小さい場合tanθ#θ)   ・・・(1)ガ
ルバノミラ−17の回転速度が一定であるとして、これ
によって平行収束されたレーザスポットは異物付着防止
膜23の表面上を等速運動することになるものである。
h=f-tanθHf-θ (tanθ#θ if θ is small) (1) Assuming that the rotation speed of the galvano mirror 17 is constant, the parallel focused laser spot will be on the surface of the foreign matter adhesion prevention film 23. It will move at a constant speed above.

第5図はガルバノミラ−17を駆動する信号としての三
角波信号と光電変換素子27の1個当りに係る光量蓄積
時間を表わしたものである図示の如く光電変換素子27
の走査時間Tをガルバノミラ−17の周期tに同期して
整数倍に設定することによって光電変換素子27に蓄積
される光量をかせいでいるが、これと各走査位置での走
査条件が同一であるということから第6図に示すように
異物付着防止膜23の表面上の中心付近に存在する異物
からの散乱光強度と端に存在する異物からの散乱光強度
は同一となり、はぼ均一な散乱光強度分布28が得られ
るものである。したがって、これまでのように場所によ
ってしきい値レベルを変える必要がなくたとえ異物付着
防止膜23が上下動する場合でも一定しきい値レベル4
3のみで安定した異物検出が行ない得るわけである。
FIG. 5 shows the triangular wave signal as a signal for driving the galvano mirror 17 and the light amount accumulation time for each photoelectric conversion element 27. As shown in the figure, the photoelectric conversion element 27
The amount of light accumulated in the photoelectric conversion element 27 is increased by setting the scanning time T to an integral multiple in synchronization with the period t of the galvano mirror 17, but the scanning conditions at each scanning position are the same. Therefore, as shown in FIG. 6, the intensity of the scattered light from the foreign matter existing near the center on the surface of the foreign matter adhesion prevention film 23 is the same as the intensity of the scattered light from the foreign matter present at the edges, and the scattering is almost uniform. A light intensity distribution 28 is obtained. Therefore, there is no need to change the threshold level depending on the location as in the past, and even if the foreign matter adhesion prevention film 23 moves up and down, the threshold level remains constant at 4.
This means that stable foreign matter detection can be performed with only 3.

第7図は異物以外からの散乱光発生要因を示したもので
ある。異物20からの散乱光21として誤検出し易いも
のとしては、異物付着防止膜23を貼り付けである枠2
4からの散乱光31および異物付着防止膜23を通過し
た光がガラス基板39の表面5に形成さ九たパターン2
9に当ることによって発生する散乱光30か考えられる
ものとなっている。ところで、第8図(a)、(b)に
示すように一般にガラス基板のような透明物質にレーザ
光等の光を斜方向より照射した場合、照射角度aによっ
ても異なるが、基板表面5に対して平行な方向(水平方
向)に磁界面が振動する波(S偏光波)44では反射成
分が多く、これとは逆に基板表面5に対して垂直方向に
磁界面が振動する波(p偏光波)45の場合には透過成
分が多くなるという性質がある。この事実よりして基板
表面5に形成されたパターン29からの散乱光の影響を
極力防ぐべく偏光板16によって異物付着防止膜23に
対しS偏光波を照射し、異物付着防止膜23を通過する
光を最小限に抑えることが望ましいと云える。しかしな
がら、異物付着防止膜23を通過した極わずかなレーザ
光によってもパターン29からの散乱光は発生するので
、第9図、第10図に示すように散乱光検出系の光軸4
2を基板表面5の垂直41よりもΦだけ傾斜させた状態
として設定することによってパターン29からの散乱光
30の発生個所をのぞまないようにすることが望ましい
。なお、第9図は異物付着防止膜23上を検査している
場合での、第10図は異物付着防止膜23と同一機能を
持つ比較的厚いガラス基板39表面を検査している場合
でのパターン29からの散乱光30の発生状態をそれぞ
れ示したものである。また、図中の記号dは照射レーザ
光のビーム径を、tはガラス基板39の板厚または異物
付着防止膜23を貼り付けである枠24の厚さを、φは
ψに対する屈折角をそれぞれ示す。
FIG. 7 shows factors that generate scattered light from sources other than foreign objects. Frame 2 to which a foreign matter adhesion prevention film 23 is attached is likely to be mistakenly detected as scattered light 21 from foreign matter 20.
Scattered light 31 from 4 and light passing through the foreign matter adhesion prevention film 23 form a pattern 2 on the surface 5 of the glass substrate 39.
It is possible that the scattered light 30 is generated by hitting the light beam 9. By the way, as shown in FIGS. 8(a) and 8(b), when a transparent material such as a glass substrate is generally irradiated with light such as a laser beam from an oblique direction, the surface 5 of the substrate is irradiated, although this varies depending on the irradiation angle a. On the other hand, a wave (S-polarized wave) 44 in which the magnetic interface vibrates in a parallel direction (horizontal direction) has many reflected components, whereas a wave in which the magnetic interface vibrates in a direction perpendicular to the substrate surface 5 (p In the case of polarized light wave) 45, there is a property that the number of transmitted components increases. Based on this fact, in order to prevent the influence of scattered light from the pattern 29 formed on the substrate surface 5 as much as possible, the polarizing plate 16 irradiates the foreign matter adhesion prevention film 23 with S-polarized light waves, which pass through the foreign matter adhesion prevention film 23. It can be said that it is desirable to minimize light. However, even a very small amount of laser light passing through the foreign matter adhesion prevention film 23 causes scattered light from the pattern 29, so as shown in FIGS. 9 and 10, the optical axis 4 of the scattered light detection system
It is preferable to set the pattern 29 so that it is inclined by Φ with respect to the vertical 41 of the substrate surface 5 so that the location where the scattered light 30 from the pattern 29 is generated cannot be seen. Note that FIG. 9 shows the case where the top of the foreign matter adhesion prevention film 23 is being inspected, and FIG. 10 shows the case where the surface of a relatively thick glass substrate 39 having the same function as the foreign matter adhesion prevention film 23 is being inspected. The generation states of scattered light 30 from the pattern 29 are shown respectively. In addition, the symbol d in the figure indicates the beam diameter of the irradiated laser beam, t indicates the thickness of the glass substrate 39 or the thickness of the frame 24 to which the foreign matter adhesion prevention film 23 is attached, and φ indicates the refraction angle with respect to ψ. show.

何れにしても散乱光検出系がパターン29からの散乱光
30を検出しないための条件はその検出系の光軸42が
基板表面5または異物付着防止膜23の表面を通過後、
屈折または直進してガラス基板39でのパターン形成面
との交点が照射レーザ光のビーム径dの中に含まれない
ことである。即ち、次式を満足するψが設定される必要
がある。
In any case, the condition for the scattered light detection system not to detect the scattered light 30 from the pattern 29 is that after the optical axis 42 of the detection system passes the substrate surface 5 or the surface of the foreign matter adhesion prevention film 23,
The point where the laser beam is refracted or goes straight and intersects with the pattern forming surface of the glass substrate 39 is not included in the beam diameter d of the irradiated laser beam. That is, it is necessary to set ψ that satisfies the following equation.

ψ≧5in−1(n 5in(tan−”d/2 t)
) −(2)但し、nは屈折率を示す。第9図の場合は
、異物付着防止膜23は薄く直進する関係でnは1とす
る。
ψ≧5in-1(n 5in(tan-”d/2t)
) - (2) However, n indicates a refractive index. In the case of FIG. 9, n is set to 1 because the foreign matter adhesion prevention film 23 is thin and moves straight.

しかし、実際には結像レンズ26の収差量等も影響して
くるので、上記した数式で求めたΦより若干変動するが
、ψはほぼO°以上20’以下の範囲内に設定される。
However, in reality, since the amount of aberration of the imaging lens 26 is also affected, ψ varies slightly from Φ determined by the above formula, but ψ is set within a range of approximately 0° or more and 20' or less.

一方、異物付着防止膜23が貼り付けられている枠24
から発生する散乱光31は第11図に示すように、光電
変換素子27の結像位置に遮光袋w32を付加設置する
ことによって遮光することが可能である。結像レンズ2
6近傍に遮光装置を適当に設ける場合は、枠24からの
散乱光31は光電変換素子27で検出され得ないもので
ある。
On the other hand, the frame 24 to which the foreign matter adhesion prevention film 23 is attached
The scattered light 31 generated from the photoelectric conversion element 27 can be blocked by additionally installing a light-blocking bag w32 at the imaging position of the photoelectric conversion element 27, as shown in FIG. Imaging lens 2
When a light blocking device is appropriately provided near the frame 24, the scattered light 31 from the frame 24 cannot be detected by the photoelectric conversion element 27.

さて、異物検査装置の構成としてはこの他特開昭57−
80546の様なものも考えられる。
Now, as for the configuration of the foreign matter inspection device, there are other
Something like 80546 is also possible.

また、搬送途中にTVカメラ等を設け、異物付着の可能
性の低い状態で目視wl察することも可能である。異物
検査装置の設置場所としては、基板の搬送途中の他、縮
小投影露光装置上に検査ステーションを設け、ここに設
置することも可能である。
Furthermore, it is also possible to install a TV camera or the like during transportation and visually observe the product in a state where there is a low possibility of foreign matter adhering. The foreign matter inspection device can be installed not only while the substrate is being transported, but also by providing an inspection station on the reduction projection exposure device and installing it there.

また、異物付着防止膜上の異物を除去するための装置を
併置することも可能である。
Further, it is also possible to juxtapose a device for removing foreign matter on the foreign matter adhesion prevention film.

更に、本発明は縮小投影露光装置に限らす1:1反射形
投影露光装置にも使用できる。
Furthermore, the present invention can be used not only in reduction projection exposure apparatuses but also in 1:1 reflective projection exposure apparatuses.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明によれば、異物付着防止膜
上に付着した露光に支障のある大きな異物を、基板上に
形成された回路パターンのエツジから生じる散乱光を実
質的に検出することなく検査することができ、露光工程
での歩留り向上に大きく貢献することができる効果を奏
する。
As explained above, according to the present invention, it is possible to detect large foreign particles that have adhered to the foreign particle adhesion prevention film and interfere with exposure by substantially detecting the scattered light generated from the edges of the circuit pattern formed on the substrate. This has the effect that it can be inspected without any problems, and can greatly contribute to improving the yield in the exposure process.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示す図、第2図は別の実施
例を示す図、第3図は本発明による異物検出装置の一例
での構成を示す図、第4図はその構成におけるレーザ光
照射系の動作を説明するための図、第5図は同じくその
構成におけるガルバノミラ−の訃動信号と光電素子の光
量蓄積時間との関係を説明するための図、第6図は本発
明に係る異物検出処理を説明するための図、第7図は異
物以外からの散乱光発生要因を示す図、第8図(a)、
(b)は、それぞれ基板表面でのS偏光波、p偏光波の
反射状態を示す図、第9図、第10図は不要な散乱光を
検出不可とする散乱光検出系の光軸の望ましい設定状態
を説明するための図、第11図は同じく不要な散乱光を
検出不可とする散乱光検出系の望ましい構成を示す図で
ある。 1.2・・・異物検査装置 3・・・搬送アーム   10・・・露光光学系14・
・レーザ発振器  15・・集光レンズ16・・・偏光
板     17・・・ガルバノミラ−18・・・コリ
メータレンズ 26・結像レンズ   27・・・光電変換素子32・
・遮光装置 第 ! 図 第 図 岸 杢 纂 ン 纂 図 1(? 稟 図 纂 シ 図 招 図
FIG. 1 is a diagram showing one embodiment of the present invention, FIG. 2 is a diagram showing another embodiment, FIG. 3 is a diagram showing the configuration of an example of a foreign object detection device according to the present invention, and FIG. FIG. 5 is a diagram for explaining the operation of the laser beam irradiation system in the configuration, FIG. A diagram for explaining the foreign object detection process according to the present invention, FIG. 7 is a diagram showing the factors of scattered light generation from sources other than foreign objects, FIG. 8 (a),
(b) is a diagram showing the reflection states of S-polarized light waves and p-polarized light waves on the substrate surface, respectively, and FIGS. 9 and 10 are diagrams showing the desirable optical axis of the scattered light detection system that makes it impossible to detect unnecessary scattered light. FIG. 11, which is a diagram for explaining the setting state, is a diagram showing a desirable configuration of a scattered light detection system that similarly makes it impossible to detect unnecessary scattered light. 1.2... Foreign object inspection device 3... Transport arm 10... Exposure optical system 14.
- Laser oscillator 15... Condensing lens 16... Polarizing plate 17... Galvano mirror 18... Collimator lens 26 - Imaging lens 27... Photoelectric conversion element 32.
・Shading device number! Figure 1 (? Figure 1)

Claims (1)

【特許請求の範囲】 1、露光に使用するレチクルやフォトマスク等の基板に
異物付着防止膜を付けた枠を装着した被検査対象物に対
して、上記異物付着防止膜上に光束を照射する光照射光
学系と、該光照射光学系によって照射された異物付着防
止膜上のほぼ光束の中心を通り、且つ異物付着防止膜を
通過した光による上記基板面上における光束とは交わら
ないように検出光軸を上記照射光束dに対して角度ψ≧
tan^−^1d/2t(但しtは基板表面と異物付着
防止膜との間の距離)で配置させて上記異物付着防止膜
上に付着した異物のみからの散乱光を検出する検出光学
系と、該検出光学系によって検出される異物付着防止膜
上に付着した異物のみからの散乱光を受光して信号に変
換する光電変換手段とを備え、異物付着防止膜上に付着
した露光に支障のある大きな異物を検査するように構成
したことを特徴とする異物検査装置。 2、上記検出光学系に、枠から発生する散乱光を遮光す
る遮光装置を設けたことを特徴とする特許請求の範囲第
1項記載の異物検査装置。
[Claims] 1. For an object to be inspected, which has a frame on which a foreign matter adhesion prevention film is attached to a substrate such as a reticle or photomask used for exposure, a light beam is irradiated onto the foreign matter adhesion prevention film. The light beam passes approximately through the center of the light irradiation optical system and the light beam irradiated by the light irradiation optical system on the foreign matter adhesion prevention film, and does not intersect with the light beam on the substrate surface due to the light that has passed through the foreign matter adhesion prevention film. The detection optical axis is at an angle ψ≧ with respect to the irradiation light flux d.
a detection optical system arranged at tan^-^1d/2t (where t is the distance between the substrate surface and the foreign matter adhesion prevention film) to detect scattered light only from foreign matter adhering to the foreign matter adhesion prevention film; , a photoelectric conversion means for receiving scattered light from only the foreign matter adhering to the foreign matter adhesion prevention film detected by the detection optical system and converting it into a signal; A foreign matter inspection device characterized in that it is configured to inspect a certain large foreign matter. 2. The foreign matter inspection device according to claim 1, wherein the detection optical system is provided with a light shielding device for shielding scattered light generated from the frame.
JP2197911A 1990-07-27 1990-07-27 Foreign matter inspection device Expired - Lifetime JPH0711492B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2197911A JPH0711492B2 (en) 1990-07-27 1990-07-27 Foreign matter inspection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2197911A JPH0711492B2 (en) 1990-07-27 1990-07-27 Foreign matter inspection device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP59222011A Division JPS61100932A (en) 1984-10-24 1984-10-24 Exposure equipment

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP8011401A Division JP2677982B2 (en) 1996-01-26 1996-01-26 Exposure method
JP8011400A Division JP2677981B2 (en) 1996-01-26 1996-01-26 Exposure equipment

Publications (2)

Publication Number Publication Date
JPH04143640A true JPH04143640A (en) 1992-05-18
JPH0711492B2 JPH0711492B2 (en) 1995-02-08

Family

ID=16382326

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2197911A Expired - Lifetime JPH0711492B2 (en) 1990-07-27 1990-07-27 Foreign matter inspection device

Country Status (1)

Country Link
JP (1) JPH0711492B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5767962A (en) * 1994-01-13 1998-06-16 Canon Kabushiki Kaisha Inspection system and device manufacturing method using the same
WO2005052687A1 (en) * 2003-11-25 2005-06-09 Nikon Corporation Foreign object inspection device and method, and exposure device
JP2010054290A (en) * 2008-08-27 2010-03-11 Kanto Auto Works Ltd Lighting system and surface inspection device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56115945A (en) * 1980-02-18 1981-09-11 Hitachi Electronics Eng Co Ltd Detecting device for defect of panel plate
JPS5780546A (en) * 1980-11-07 1982-05-20 Nippon Kogaku Kk <Nikon> Detecting device for foreign substance
JPS5917248A (en) * 1982-07-21 1984-01-28 Hitachi Ltd Inspection system for foreign matter
JPS5982727A (en) * 1982-11-04 1984-05-12 Hitachi Ltd Method and apparatus for detecting foreign matter

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56115945A (en) * 1980-02-18 1981-09-11 Hitachi Electronics Eng Co Ltd Detecting device for defect of panel plate
JPS5780546A (en) * 1980-11-07 1982-05-20 Nippon Kogaku Kk <Nikon> Detecting device for foreign substance
JPS5917248A (en) * 1982-07-21 1984-01-28 Hitachi Ltd Inspection system for foreign matter
JPS5982727A (en) * 1982-11-04 1984-05-12 Hitachi Ltd Method and apparatus for detecting foreign matter

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5767962A (en) * 1994-01-13 1998-06-16 Canon Kabushiki Kaisha Inspection system and device manufacturing method using the same
WO2005052687A1 (en) * 2003-11-25 2005-06-09 Nikon Corporation Foreign object inspection device and method, and exposure device
JP2010054290A (en) * 2008-08-27 2010-03-11 Kanto Auto Works Ltd Lighting system and surface inspection device

Also Published As

Publication number Publication date
JPH0711492B2 (en) 1995-02-08

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