JPH0413865B2 - - Google Patents
Info
- Publication number
- JPH0413865B2 JPH0413865B2 JP62015164A JP1516487A JPH0413865B2 JP H0413865 B2 JPH0413865 B2 JP H0413865B2 JP 62015164 A JP62015164 A JP 62015164A JP 1516487 A JP1516487 A JP 1516487A JP H0413865 B2 JPH0413865 B2 JP H0413865B2
- Authority
- JP
- Japan
- Prior art keywords
- diffusion layer
- input
- type
- region
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000009792 diffusion process Methods 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000012535 impurity Substances 0.000 claims description 9
- 238000002955 isolation Methods 0.000 description 20
- 230000015556 catabolic process Effects 0.000 description 13
- 239000000969 carrier Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62015164A JPS63184359A (ja) | 1987-01-27 | 1987-01-27 | 半導体装置の入力保護回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62015164A JPS63184359A (ja) | 1987-01-27 | 1987-01-27 | 半導体装置の入力保護回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63184359A JPS63184359A (ja) | 1988-07-29 |
| JPH0413865B2 true JPH0413865B2 (fr) | 1992-03-11 |
Family
ID=11881160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62015164A Granted JPS63184359A (ja) | 1987-01-27 | 1987-01-27 | 半導体装置の入力保護回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63184359A (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6206058B2 (ja) * | 2013-10-02 | 2017-10-04 | サンケン電気株式会社 | 半導体装置 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5085284A (fr) * | 1973-11-29 | 1975-07-09 | ||
| JPS53145578A (en) * | 1977-05-25 | 1978-12-18 | Nec Corp | Diode varister |
| JPS5541770A (en) * | 1978-09-19 | 1980-03-24 | Nec Corp | Zener diode |
| JPS55103773A (en) * | 1979-02-05 | 1980-08-08 | Nec Corp | Semiconductor device |
| JPS5785266A (en) * | 1980-11-17 | 1982-05-27 | Toshiba Corp | Zener diode |
| JPS59191365A (ja) * | 1983-04-15 | 1984-10-30 | Hitachi Ltd | 半導体装置 |
| JPS60249375A (ja) * | 1984-05-09 | 1985-12-10 | アナログ デバイセス インコーポレーテツド | 埋込みツエナー・ダイオードをもつｉｃウエイフアを形成するためのイオン注入処理法及び該処理法によつて作られるｉｃ構造体 |
-
1987
- 1987-01-27 JP JP62015164A patent/JPS63184359A/ja active Granted
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5085284A (fr) * | 1973-11-29 | 1975-07-09 | ||
| JPS53145578A (en) * | 1977-05-25 | 1978-12-18 | Nec Corp | Diode varister |
| JPS5541770A (en) * | 1978-09-19 | 1980-03-24 | Nec Corp | Zener diode |
| JPS55103773A (en) * | 1979-02-05 | 1980-08-08 | Nec Corp | Semiconductor device |
| JPS5785266A (en) * | 1980-11-17 | 1982-05-27 | Toshiba Corp | Zener diode |
| JPS59191365A (ja) * | 1983-04-15 | 1984-10-30 | Hitachi Ltd | 半導体装置 |
| JPS60249375A (ja) * | 1984-05-09 | 1985-12-10 | アナログ デバイセス インコーポレーテツド | 埋込みツエナー・ダイオードをもつｉｃウエイフアを形成するためのイオン注入処理法及び該処理法によつて作られるｉｃ構造体 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63184359A (ja) | 1988-07-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |