JPH04130670A - Electrostatic capacitance type pressure sensor - Google Patents

Electrostatic capacitance type pressure sensor

Info

Publication number
JPH04130670A
JPH04130670A JP25112490A JP25112490A JPH04130670A JP H04130670 A JPH04130670 A JP H04130670A JP 25112490 A JP25112490 A JP 25112490A JP 25112490 A JP25112490 A JP 25112490A JP H04130670 A JPH04130670 A JP H04130670A
Authority
JP
Japan
Prior art keywords
pressure sensor
oscillation circuit
glass base
case
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25112490A
Other languages
Japanese (ja)
Inventor
Takashi Ito
隆史 伊東
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP25112490A priority Critical patent/JPH04130670A/en
Publication of JPH04130670A publication Critical patent/JPH04130670A/en
Pending legal-status Critical Current

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  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE:To obtain a small size electrostatic capacitance type pressure sensor having uniform performance by stacking necessary elements and packaging these elements into a case having lead terminals in the electrostatic capacitance type pressure sensor comprising a silicon diagphram, a glass base and an oscillation circuit IC. CONSTITUTION:An electrostatic capacitance type pressure sensor chip is formed by anode junction of silicon diagphram 3 and a glass base 2. At the interface between the silicon diagphram 3 and the glass base 2, electrodes are provided in both sides forming capacitance electrodes. The other surface of the glass base 2 of this sensor chip is bonded to the rear surface opposed to the circuit forming surface of an oscillation circuit IC 1. The other surface of the silicon diagphram 3 operates as a pressure receiving surface and a pressure receiving part is exposed to a case 4 providing holes at the position corresponding to the silicon diagphram 3. A pressure receiving aperture of case 4 is sealed by a gel membrane 6. A sensor as a whole may be integrated and reduced in size. Moreover, connection between the oscillating circuit IC and sensor is shortened and influence by floating capacitance and noise can also be reduced.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、静電容量型圧力センサに間する。[Detailed description of the invention] [Industrial application field] The present invention relates to a capacitive pressure sensor.

〔発明の概要〕[Summary of the invention]

この発明は、シリコンダイヤフラムとガラス基台、発振
回路ICからなる静電容量型圧力センサにおいて、前記
3要素を積層し、リード端子を有するケースにパンケー
ジすることにより小型で、性能の均一な静電容量型圧力
センサを得られることを目的としている。
This invention is a capacitive pressure sensor consisting of a silicon diaphragm, a glass base, and an oscillation circuit IC.The above three elements are laminated and packaged in a case with lead terminals to make the sensor compact and uniform in performance. The purpose is to obtain a capacitive pressure sensor.

〔従来の技術〕[Conventional technology]

従来、第5図に示すように発振回路は複数の素子により
構成された回路ブロック8からなり、ワンチップIC化
されていなかつた。
Conventionally, as shown in FIG. 5, an oscillation circuit has consisted of a circuit block 8 made up of a plurality of elements, and has not been integrated into a one-chip IC.

そして、発振回路を構成する基板は、ケース4の内部で
ガラス基台2とシリコンダイヤフラム3からなるセンサ
チップとリード端子工8で結線されていた。例えば特開
昭58−198739号公報などに従来のような構造が
開示されている。
The substrate constituting the oscillation circuit was connected inside the case 4 to a sensor chip consisting of a glass base 2 and a silicon diaphragm 3 using lead terminals 8. For example, a conventional structure is disclosed in Japanese Unexamined Patent Publication No. 58-198739.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかし、従来の静電容量型センサの構成では、発振回路
をセンサチップに近づけ、同しケース内にシールドし納
めていた。このため、外部からのノイズ等の影響は低減
させている。しかし、発振回路がワンチップIC化され
ていないため、素子間の配線が長く浮遊容量が多かった
。また、静電容量型圧力センサチップを小型化すると、
センサチップの静電容量は減るのに対し、浮遊容量は相
対的に増大し、正確なセンシングが不可能になるという
課題を有していた。
However, in conventional capacitive sensor configurations, the oscillation circuit is placed close to the sensor chip and shielded within the same case. Therefore, the influence of external noise etc. is reduced. However, since the oscillation circuit was not integrated into a single chip IC, the wiring between elements was long and there was a lot of stray capacitance. In addition, if the capacitive pressure sensor chip is miniaturized,
While the capacitance of the sensor chip decreases, the stray capacitance increases relatively, making accurate sensing impossible.

そこで、この発明の目的は、従来のこのような課題を解
決するため、素子間の配線を短縮した小型で性能の良い
静電圧力型センサを得ることとしている。
SUMMARY OF THE INVENTION In order to solve these conventional problems, it is an object of the present invention to provide a small, high-performance electrostatic force sensor in which wiring between elements is shortened.

〔課題を解決するための手段〕[Means to solve the problem]

前記!IIIを解決するために、本発明では発振回路を
ワンチップ【Cに集積するとともに、シリコンダイヤフ
ラムおよびガラス基台とともに積層配置し、リード端子
を有すケースに収納した。
Said! In order to solve the problem III, in the present invention, the oscillation circuit is integrated on a single chip [C], and is stacked together with a silicon diaphragm and a glass base, and housed in a case having lead terminals.

〔作用〕[Effect]

前記のように構成された静電容量型センサでは、発振回
路が集積化されたICになっている。また、ダイヤフラ
ムとガラス基台とともに前記発振回路ICを積層するた
め、平面スペースの縮小化がさらに可能となる。そして
、ダイヤフラムとガラス基台が接合されて構成されるセ
ンサチップと発振回路ICとの結線および発振回路IC
とリード端子の結線が短縮されているので、浮遊容量の
低減、ノイズの影響を減らすことができる。
In the capacitive sensor configured as described above, the oscillation circuit is integrated into an IC. Furthermore, since the oscillation circuit IC is stacked together with the diaphragm and the glass base, it is possible to further reduce the planar space. Then, the connection between the sensor chip and the oscillation circuit IC, which are formed by bonding the diaphragm and the glass base, and the oscillation circuit IC.
The connection between the lead terminal and the lead terminal is shortened, reducing stray capacitance and reducing the effects of noise.

〔実施例〕〔Example〕

以下に、本発明の実施例を図面に基づいて説明する。第
1図および第2図は本考案の第一の実施例を示す平面図
および断面図である。
Embodiments of the present invention will be described below based on the drawings. 1 and 2 are a plan view and a sectional view showing a first embodiment of the present invention.

第1図において、リード端子は、リードフレーム5でつ
くられ、ケース4にインサート成形されている。静電容
量型圧カセンサチノプはシリコンダイヤフラム3とガラ
ス基台2が陽極接合されて構成されている。シリコンダ
イヤフラム3とガラス基台2の対向面には両方にt掻が
有り、容量電極をなしている。このセンサチップのガラ
ス基台2のもう一方の面と、発振回路ICIの回路形成
面に相対する裏の面が接着されている。シリコンダイヤ
フラム3のもう一方の面は、受圧面となり、シリコンダ
イヤフラム3に相対する位置に穴をあけたケース4に対
し、受圧部を露出させて配置されている。前記ケース4
を受圧開孔部は、ゲル状部材6で封止されている。
In FIG. 1, the lead terminal is made of a lead frame 5 and is insert molded into the case 4. The capacitive pressure sensor tinop is constructed by anodic bonding of a silicon diaphragm 3 and a glass base 2. Opposing surfaces of the silicon diaphragm 3 and the glass base 2 have t-scratches on both sides, forming capacitive electrodes. The other surface of the glass base 2 of this sensor chip and the back surface facing the circuit forming surface of the oscillation circuit ICI are bonded. The other surface of the silicon diaphragm 3 serves as a pressure-receiving surface, and is disposed with the pressure-receiving portion exposed to the case 4, which has a hole formed at a position opposite to the silicon diaphragm 3. Said case 4
The pressure-receiving opening is sealed with a gel-like member 6.

積層されたセンサチップと発振回路ICIは、各々リー
ドフレーム5に結線され電気的な接続がされている。
The stacked sensor chips and oscillation circuit ICI are each connected to a lead frame 5 for electrical connection.

第2図に示されるように、ケース4の台部にリードフレ
ーム5の一部が接着固定され、その上にガラス基台とシ
リコンダイヤフラムを陽極接合したセンサチップのガラ
ス基台側2が、接着固定されている。
As shown in FIG. 2, a part of the lead frame 5 is adhesively fixed to the base of the case 4, and the glass base side 2 of the sensor chip, in which the glass base and the silicon diaphragm are anodically bonded, is adhesively fixed to the base of the case 4. Fixed.

ガラス基台2と発振回路ICIが接着される互いの面は
、各々が絶縁物で構成されているので、短絡などの電気
的な問題もなく積層配置ができる。
Since the surfaces to which the glass base 2 and the oscillation circuit ICI are bonded are each made of an insulator, a stacked arrangement is possible without electrical problems such as short circuits.

センサチフブからは、ガラス基台の対向面に設けられた
電極がリードフレーム5と、また発振回路ICIの電極
がリードフレーム5に結線され電気的接続がされる。
From the sensor chip, the electrodes provided on the opposing surface of the glass base are connected to the lead frame 5, and the electrodes of the oscillation circuit ICI are connected to the lead frame 5 for electrical connection.

第4図および第5図は本発明の第二の実施例を示す平面
図および断面図である。
FIGS. 4 and 5 are a plan view and a sectional view showing a second embodiment of the present invention.

第4図に示すごとくケース4の開口部側の、シリコンダ
イヤフラム3の面が受圧面となり、全体がゲル状部材6
で、封止されて構成されている。
As shown in FIG. 4, the surface of the silicon diaphragm 3 on the opening side of the case 4 becomes the pressure receiving surface, and the entire gel-like member 6
It is configured in a sealed manner.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、発振回路用ICとシリコンダイヤフラ
ムを、ガラス基台を介することで、接着することが可能
となり、平面的にケース台部に別々にわけて配置せずに
済むようになるので、センサ全体の集積化が可能となり
、小型化することができるようになる。また発振回路I
Cと、センサの結線も短縮され浮遊容量、ノイズ等によ
る影響も低減されるという効果を有する。
According to the present invention, it is possible to bond the oscillation circuit IC and the silicon diaphragm through the glass base, and there is no need to arrange them separately on the case base in a two-dimensional manner. , it becomes possible to integrate the entire sensor and downsize it. Also, the oscillation circuit I
This has the effect that the connection between C and the sensor can be shortened and the effects of stray capacitance, noise, etc. can be reduced.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の第一の実施例を示す平面図、第2図は
その断面図、第3図は本発明の第二の実施例を示す平面
図、第4図はその断面図、第5図は従来例を示す断面図
である。 発振回路rc ガラス基台 シリコンダイヤフラム ケース リードフレーム ゲル 封止材 回路ブロック 以上
Fig. 1 is a plan view showing a first embodiment of the present invention, Fig. 2 is a sectional view thereof, Fig. 3 is a plan view showing a second embodiment of the invention, and Fig. 4 is a sectional view thereof; FIG. 5 is a sectional view showing a conventional example. Oscillation circuit RC glass base silicon diaphragm case lead frame gel encapsulant circuit block or more

Claims (3)

【特許請求の範囲】[Claims] (1)片面に電極パターンを有するガラス基台、および
、一部にダイヤフラム状肉薄部を有し、かつ、片面に電
極パターンを有するシリコンダイヤフラムの両者の電極
パターンを対向させて接合した静電容量型圧力センサチ
ップと、 前記静電容量型圧力センサチップに接続される発振回路
と、 前記静電容量型圧力センサチップのシリコンダイヤフラ
ム肉厚部の受圧面を感圧封止した静電容量型圧力センサ
において、 前記静電容量型センサチップのガラス基台に積層固定し
た発振回路ICを有することを特徴とする静電容量型圧
力センサ。
(1) A capacitor bonded to a glass base with an electrode pattern on one side and a silicon diaphragm with a diaphragm-like thin part on a part and an electrode pattern on one side with the electrode patterns facing each other. a capacitive pressure sensor chip, an oscillation circuit connected to the capacitive pressure sensor chip, and a capacitive pressure sensor in which a pressure-receiving surface of a thick silicon diaphragm of the capacitive pressure sensor chip is pressure-sensitively sealed. A capacitive pressure sensor comprising: an oscillation circuit IC stacked and fixed on a glass base of the capacitive sensor chip.
(2)請求項1記載の静電容量型圧力センサにおいて、 底部に圧力導入口を有するケースと、 前記ケースに固定されたリード端子と、 前記ケースの圧力導入口のある方向と受圧面を固定する
方向とそろえて固定したシリコンダイヤフラムを有する
静電容量型圧力センサチップと、前記シリコンダイヤフ
ラムの電極パターン、および、前記発振回路ICの電極
パッドと前記リード端子を結ぶ結線手段と、 前記シリコンダイヤフラムの受圧面部を封止するゲル状
封止材を有する静電容量型圧力センサ。
(2) The capacitive pressure sensor according to claim 1, comprising: a case having a pressure introduction port at the bottom; a lead terminal fixed to the case; and a pressure receiving surface fixed to the direction of the pressure introduction port of the case. a capacitive pressure sensor chip having a silicon diaphragm fixed in alignment with the direction of the oscillation circuit, an electrode pattern of the silicon diaphragm, and a connection means for connecting the electrode pad of the oscillation circuit IC and the lead terminal; A capacitive pressure sensor that has a gel-like sealant that seals the pressure-receiving surface.
(3)請求項1記載の静電容量型圧力センサにおいて、 ガラス基台のある面を発振回路ICの回路形成面に固定
した静電容量型圧力センサチップと、回路形成面の反対
の面を前記ケース底部に固定した発振回路ICと、 前記ケースの開口面に合わせて固定したシリコンダイヤ
フラムと、 前記ガラス基台の電極パターン、および、前記発振回路
ICの電極パッドと前記リード端子を結ぶ結線手段と、 前記シリコンダイヤフラム、ガラス基板、発振回路IC
、および、結線手段を封止するゲル状封止材を有する静
電容量型圧力センサ。
(3) In the capacitive pressure sensor according to claim 1, the capacitive pressure sensor chip has a glass base fixed to the circuit forming surface of the oscillation circuit IC, and the surface opposite to the circuit forming surface is fixed to the circuit forming surface of the oscillation circuit IC. an oscillation circuit IC fixed to the bottom of the case; a silicon diaphragm fixed to the opening of the case; an electrode pattern on the glass base; and a connection means connecting the electrode pad of the oscillation circuit IC and the lead terminal. and the silicon diaphragm, glass substrate, and oscillation circuit IC.
, and a capacitive pressure sensor having a gel-like sealing material that seals the connection means.
JP25112490A 1990-09-20 1990-09-20 Electrostatic capacitance type pressure sensor Pending JPH04130670A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25112490A JPH04130670A (en) 1990-09-20 1990-09-20 Electrostatic capacitance type pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25112490A JPH04130670A (en) 1990-09-20 1990-09-20 Electrostatic capacitance type pressure sensor

Publications (1)

Publication Number Publication Date
JPH04130670A true JPH04130670A (en) 1992-05-01

Family

ID=17218027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25112490A Pending JPH04130670A (en) 1990-09-20 1990-09-20 Electrostatic capacitance type pressure sensor

Country Status (1)

Country Link
JP (1) JPH04130670A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5438219A (en) * 1993-11-30 1995-08-01 Motorola, Inc. Double-sided oscillator package and method of coupling components thereto
US5444286A (en) * 1993-02-04 1995-08-22 Mitsubishi Denki Kabushiki Kaisha Packaged semiconductor pressure sensor including lead supports within the package
US5455445A (en) * 1994-01-21 1995-10-03 Kulite Semiconductor Products, Inc. Multi-level semiconductor structures having environmentally isolated elements
JP2006090846A (en) * 2004-09-24 2006-04-06 Denso Corp Pressure sensor
JP2008039626A (en) * 2006-08-08 2008-02-21 Epson Toyocom Corp Pressure detection device
JP2013213772A (en) * 2012-04-03 2013-10-17 Mitsumi Electric Co Ltd Semiconductor sensor and method of manufacturing the same
JP2016191699A (en) * 2015-03-31 2016-11-10 株式会社フジクラ Pressure sensor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5444286A (en) * 1993-02-04 1995-08-22 Mitsubishi Denki Kabushiki Kaisha Packaged semiconductor pressure sensor including lead supports within the package
US5438219A (en) * 1993-11-30 1995-08-01 Motorola, Inc. Double-sided oscillator package and method of coupling components thereto
US5455445A (en) * 1994-01-21 1995-10-03 Kulite Semiconductor Products, Inc. Multi-level semiconductor structures having environmentally isolated elements
JP2006090846A (en) * 2004-09-24 2006-04-06 Denso Corp Pressure sensor
JP4548066B2 (en) * 2004-09-24 2010-09-22 株式会社デンソー Pressure sensor
JP2008039626A (en) * 2006-08-08 2008-02-21 Epson Toyocom Corp Pressure detection device
JP2013213772A (en) * 2012-04-03 2013-10-17 Mitsumi Electric Co Ltd Semiconductor sensor and method of manufacturing the same
JP2016191699A (en) * 2015-03-31 2016-11-10 株式会社フジクラ Pressure sensor

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