JPH0412556B2 - - Google Patents

Info

Publication number
JPH0412556B2
JPH0412556B2 JP59245801A JP24580184A JPH0412556B2 JP H0412556 B2 JPH0412556 B2 JP H0412556B2 JP 59245801 A JP59245801 A JP 59245801A JP 24580184 A JP24580184 A JP 24580184A JP H0412556 B2 JPH0412556 B2 JP H0412556B2
Authority
JP
Japan
Prior art keywords
block
bit line
data bus
sense amplifier
bit lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59245801A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61123093A (ja
Inventor
Keizo Aoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59245801A priority Critical patent/JPS61123093A/ja
Priority to KR1019850008611A priority patent/KR900005667B1/ko
Priority to US06/798,783 priority patent/US4730280A/en
Priority to DE8585402247T priority patent/DE3582415D1/de
Priority to EP85402247A priority patent/EP0185572B1/en
Publication of JPS61123093A publication Critical patent/JPS61123093A/ja
Publication of JPH0412556B2 publication Critical patent/JPH0412556B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Static Random-Access Memory (AREA)
JP59245801A 1984-11-20 1984-11-20 半導体記憶装置 Granted JPS61123093A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59245801A JPS61123093A (ja) 1984-11-20 1984-11-20 半導体記憶装置
KR1019850008611A KR900005667B1 (ko) 1984-11-20 1985-11-18 반도체 기억장치
US06/798,783 US4730280A (en) 1984-11-20 1985-11-18 Semiconductor memory device having sense amplifiers with different driving abilities
DE8585402247T DE3582415D1 (de) 1984-11-20 1985-11-20 Halbleiterspeicher mit in bloecken unterteilten bitleitungen.
EP85402247A EP0185572B1 (en) 1984-11-20 1985-11-20 Semiconductor memory with bit lines divided into blocks

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59245801A JPS61123093A (ja) 1984-11-20 1984-11-20 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS61123093A JPS61123093A (ja) 1986-06-10
JPH0412556B2 true JPH0412556B2 (US08063081-20111122-C00044.png) 1992-03-04

Family

ID=17139038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59245801A Granted JPS61123093A (ja) 1984-11-20 1984-11-20 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS61123093A (US08063081-20111122-C00044.png)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07109709B2 (ja) * 1986-07-31 1995-11-22 三菱電機株式会社 Ｍｏｓメモリ装置
KR0167296B1 (ko) * 1995-12-16 1999-02-01 문정환 메모리의 워드라인 구동회로

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5558891A (en) * 1978-10-26 1980-05-01 Nec Corp Semiconductor memory unit
JPS57100689A (en) * 1980-12-15 1982-06-22 Fujitsu Ltd Semiconductor storage device
JPS59101093A (ja) * 1982-11-30 1984-06-11 Fujitsu Ltd 半導体記憶装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5558891A (en) * 1978-10-26 1980-05-01 Nec Corp Semiconductor memory unit
JPS57100689A (en) * 1980-12-15 1982-06-22 Fujitsu Ltd Semiconductor storage device
JPS59101093A (ja) * 1982-11-30 1984-06-11 Fujitsu Ltd 半導体記憶装置

Also Published As

Publication number Publication date
JPS61123093A (ja) 1986-06-10

Similar Documents

Publication Publication Date Title
US6522163B1 (en) Apparatus and method for coupling a first node to a second node using switches which are selectively clocked for fast switching times
US5923592A (en) Fast, low power, write scheme for memory circuits using pulsed off isolation device
CA1048153A (en) High-density, high-speed random access read-writer memory
KR950009877B1 (ko) 복수의 셀블록으로 분할된 셀어레이를 구비한 반도체 기억장치
KR900005667B1 (ko) 반도체 기억장치
US4817057A (en) Semiconductor memory device having improved precharge scheme
JPH0253879B2 (US08063081-20111122-C00044.png)
US4754433A (en) Dynamic ram having multiplexed twin I/O line pairs
JPH0422318B2 (US08063081-20111122-C00044.png)
JPH07109702B2 (ja) ダイナミック型メモリ
US5148399A (en) Sense amplifier circuitry selectively separable from bit lines for dynamic random access memory
US20030142576A1 (en) Semiconductor integrated circuit device
JPH06223573A (ja) データ伝送回路
JP3048936B2 (ja) 半導体メモリ装置
US4598389A (en) Single-ended CMOS sense amplifier
JP2658768B2 (ja) ダイナミックｒａｍ
JPS6362839B2 (US08063081-20111122-C00044.png)
US5067109A (en) Data output buffer circuit for a SRAM
US5418756A (en) Edge transition detection disable circuit to alter memory device operating characteristics
JPH0412556B2 (US08063081-20111122-C00044.png)
JP2523736B2 (ja) 半導体記憶装置
JP3231310B2 (ja) 半導体記憶装置
JPS59223994A (ja) ダイナミツク型ｒａｍ
JP2580086B2 (ja) スタテイック型半導体記憶装置
JPH0551997B2 (US08063081-20111122-C00044.png)

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term