JPH04115551A - Manufacturing apparatus for semiconductor - Google Patents

Abstract

PURPOSE:To prevent produced gas from sticking to the surface of a wafer by exhausting gas produced in hardening together with inert gas sprayed radially toward the periphery. CONSTITUTION:A fixing material 3 to which a wafer attaching sheet 2, to which a diced wafer 1 is attached, is fixed is mounted on a rail 4. Integrated outer and inner covers 11 and 12 which can be reciprocated vertically are lowered and inert gas is introduced to the chamber 121 of the inner cover 12 through a tube 9. The inert gas is sprayed radially from the center to the periphery of the wafer 1 through the holes of a porous plate 7, introduced to the outer chamber 111, and sucked out through an exhaust tube 13. In this state, UV rays 10 are applied from under the wafer attaching sheet 2 to harden a bond layer and gas produced at this time is exhausted through the exhaust tube 13 together with the inert gas. Thereby produced gas is prevented from sticking to the surface of the wafer.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a semiconductor manufacturing apparatus for favorably curing a wafer adhesive layer in an ultraviolet curable wafer adhesive sheet.

[Conventional technology]

FIG. 2 is a sectional view showing a semiconductor manufacturing apparatus for curing the wafer adhesive layer of a conventional ultraviolet curable wafer adhesive sheet. 4 is a fixing member that supports this wafer pasting sheet 2, and 4 is a rail on which this fixing member 3 is placed and held. On the other hand, 5 is the rail 4 above.
an outer cover placed above the four corners of the 6
7 is an inner cover supported and fixed to the outer cover 5; 7 is a perforated plate with a large number of holes supported and fixed to the lower part of the inner cover 6; 8 is a joint attached to the side surface of the outer cover 5; 9;
is attached to this joint 8, and its tip 9a is attached to the inner cover 6.
This is the inert gas introduction tube facing inside.

Next, the operation will be explained. Fixing material 3 to which wafer pasting sheet 2 to which diced wafer 1 is pasted is attached
Place it on the rail 4 as shown in the figure.

Then, the parts 5 to 9, which can move up and down, are lowered together, and stopped with an appropriate gap C between the upper surface of the fixing member 3 on the rail 4 and the lower surface of the internal force bar 6, and then passed through the introduction tube 9 into the inert Gas is introduced between the inner cover 6 and the perforated plate 7, and the wafer 1 and the wafer pasting sheet 2 are passed through the holes of the perforated plate 7.
Spray on top. And while maintaining that state,
The wafer adhesive layer is cured by irradiating ultraviolet rays from the bottom surface of the wafer adhesive sheet 2.

[Problem to be solved by the invention]

Semiconductor manufacturing equipment for the process of curing the adhesive layer of a conventional ultraviolet curable wafer adhesive sheet is configured as described above, but it completely prevents the gas generated from the adhesive layer during curing from adhering to the wafer surface. Therefore, after packaging with resin or the like, there are problems such as a decrease in the degree of adhesion with the resin and electrical failure.

This invention was made to solve the above-mentioned problems, and it can completely prevent the gas generated from the adhesive layer during curing from adhering to the wafer surface, allowing for high-quality and high-yield semiconductor manufacturing. The purpose is to obtain equipment.

[Means to solve the problem]

The semiconductor manufacturing apparatus according to the present invention has two annular conical covers, an inner and outer cover, to prevent the flow of debris generated during curing.
It is designed to flow radially from the wafer center to the periphery, lead to an outer chamber, and be exhausted upward from an exhaust tube provided on the outer cover.

[Effect]

The semiconductor manufacturing apparatus according to the present invention can completely collect and exhaust the gas generated from the adhesive layer during curing into the exhaust tube through the outer chamber together with the inert gas.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, 1 to 4 and 10 are the same as the above conventional example,
11 is an outer cover having an upper cylindrical part 11a and a lower conical part 11b; 12 is an inner cover disposed inside the outer cover 11 and having an upper cylindrical part 12a and a lower conical part +2b;
An inert gas introduction tube 9 is connected. 7 is a perforated plate attached to the lower surface of this inner cover 12. Further, 13 is an inert gas exhaust tube connected to the upper part of the outer cover 11.

Next, the operation will be explained. Attach the wafer pasting sheet 2 with the diced wafer 1 pasted to the fixing material 3
Place it on rail 4. On the other hand, 7, 9, 11, 12, and 13, which are movable up and down as a body, are lowered, and inert gas is introduced into the chamber 121 of the inner cover from the tube 9, and the porous plate is Inert gas is blown radially from the center of the wafer toward the periphery through the hole 7 and introduced into the outer chamber 111, and at the same time is sucked through the discharge tube 13. Then, while maintaining this state, ultraviolet rays are irradiated from below the wafer pasting sheet 2 to harden the adhesive layer, and the gas generated at that time is discharged from the discharge tube 13 together with the inert gas.

〔Effect of the invention〕

As described above, according to the present invention, the gas generated during curing can be discharged together with the inert gas radially blown toward the periphery, thereby completely preventing the gas generated from adhering to the wafer surface. This has the effect of providing a high-quality, high-yield semiconductor manufacturing device.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional semiconductor manufacturing apparatus. In the figure, 1 is a wafer, 2 is a wafer pasting sheet, 3 is a fixing material, 4 is a rail, 7 is a perforated plate, 9 is an inert gas introduction tube, 1O is an ultraviolet ray, 11 is an outer cover 12 is an inner cover, 13 is a This is an inert gas exhaust tube. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

[Claims] In the semiconductor manufacturing process, diced wafers are pasted on an ultraviolet-curable wafer adhesive sheet, inert gas is sprayed from above through a perforated plate, and ultraviolet rays are irradiated from below to bond the sheet to the wafer. In a device designed to harden the layer, it is equipped with two concentric annular conical covers, an inner and outer ring, an inert gas introduction tube is connected to the inner cover, an inert gas discharge tube is connected to the outer cover, and an inner chamber is connected to the inert gas inlet tube. A semiconductor manufacturing apparatus characterized in that an inert gas is introduced and radially blown downward to flow into an outer chamber portion, and can be exhausted to the outside together with the generated gas through the exhaust tube.