JPH07123115B2 - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JPH07123115B2 JPH07123115B2 JP23617790A JP23617790A JPH07123115B2 JP H07123115 B2 JPH07123115 B2 JP H07123115B2 JP 23617790 A JP23617790 A JP 23617790A JP 23617790 A JP23617790 A JP 23617790A JP H07123115 B2 JPH07123115 B2 JP H07123115B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- semiconductor manufacturing
- inert gas
- cover
- tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、紫外線硬化型ウエハー貼付シートにおける
ウエハー接着層の硬化を良好に進めるための半導体製造
装置に関するものである。Description: TECHNICAL FIELD The present invention relates to a semiconductor manufacturing apparatus for favorably promoting the curing of a wafer adhesive layer in an ultraviolet curable wafer sticking sheet.
第２図は、従来の紫外線硬化型ウエハー貼付シートのウ
エハー接着層の硬化に関する半導体製造装置を示す断面
図であり、図において、１はウエハー、２はこのウエハ
ー１を接着するウエハー貼付シート、３はこのウエハー
貼付シート２を支持する固定材、４はこの固定材３を載
置して保持するレールである。一方、５は上記レール４
の四隅を囲むようにその上方に配置された外カバー、６
はこの外カバー５に支持固定された内カバー、７はこの
内カバー６の下部に支持固定され多数の孔を持った多孔
板、８は上記外カバー５の側面に取付けられた継手、９
はこの継手８に装着されその先端9aが上記内カバー６内
に臨んでいる不活性ガス導入チューブである。FIG. 2 is a cross-sectional view showing a semiconductor manufacturing apparatus for curing a wafer adhesive layer of a conventional UV-curable wafer sticking sheet, in which 1 is a wafer and 2 is a wafer sticking sheet for sticking the wafer 1. Is a fixing material for supporting the wafer sticking sheet 2, and 4 is a rail for mounting and holding the fixing material 3. On the other hand, 5 is the rail 4
An outer cover arranged above the four corners of the
Is an inner cover supported and fixed to the outer cover 5, 7 is a perforated plate which is supported and fixed to the lower portion of the inner cover 6 and has a large number of holes, 8 is a joint attached to the side surface of the outer cover 5, 9
Is an inert gas introduction tube which is attached to this joint 8 and whose tip 9a faces the inside of the inner cover 6.
次に動作について説明する。ダイシング済みのウエハー
１を貼付けたウエハー貼付シート２を取付けた固定材３
を図のようにレール４上に載せる。そして一体となって
上下動可能な５〜９を下降し、レール４上の固定材３上
面と内カバー６下面とに適切な隙間Ｃをあけて停止させ
てのち、上記導入チューブ９を通して不活性ガスを内カ
バー６と多孔板７の間に導いてこの多孔板７の孔よりウ
エハー１及びウエハー貼付シート２上に吹付ける。そし
てその状態を保持したまま、一方、ウエハー貼付シート
２下面より紫外線10を照射してウエハー接着層の硬化を
行うものである。Next, the operation will be described. Fixing material 3 with a wafer sticking sheet 2 with a dicing wafer 1 stuck
On the rail 4 as shown. Then, it moves down 5-9, which can move up and down as a unit, stops with an appropriate gap C between the upper surface of the fixing member 3 on the rail 4 and the lower surface of the inner cover 6, and then it is inert through the introduction tube 9. Gas is introduced between the inner cover 6 and the perforated plate 7 and sprayed onto the wafer 1 and the wafer sticking sheet 2 through the holes of the perforated plate 7. While maintaining this state, the lower surface of the wafer sticking sheet 2 is irradiated with ultraviolet rays 10 to cure the wafer adhesive layer.
従来の紫外線硬化型ウエハー貼付シートの接着層を硬化
させる工程の半導体製造装置は、以上のように構成され
ているが、硬化時に接着層より発生するガスがウエハー
表面に付着するのを完全に防ぐことができず、このため
樹脂等でパッケージ後、樹脂との接着度が低下したり、
電気的不良を起こす等の問題点があった。The conventional semiconductor manufacturing device for curing the adhesive layer of the UV-curable wafer sticking sheet is configured as described above, but it completely prevents the gas generated from the adhesive layer from adhering to the wafer surface during curing. Therefore, after packaging with resin or the like, the degree of adhesion with the resin may decrease,
There was a problem such as causing electrical failure.
この発明は上記のような問題点を解消するためになされ
たもので、硬化時に接着層より発生するガスがウエハー
表面に付着するのを完全に防ぐことができ、高品質の歩
留りの高い半導体製造装置を得る事を目的とする。The present invention has been made to solve the above problems, and it is possible to completely prevent the gas generated from the adhesive layer from adhering to the wafer surface at the time of curing, and to manufacture semiconductors of high quality and high yield. The purpose is to get the device.
この発明に係る半導体製造装置は、内外２つの環状の円
錐形カバーを配置し、硬化時に発生したガスの流れを、
ウエハーセンターより周辺部へ放射状に流して外側チャ
ンバーに導き、外部カバーに設けた排出チューブより上
方へ排気するようにしたものである。In the semiconductor manufacturing apparatus according to the present invention, two annular conical covers are arranged inside and outside, and the gas flow generated during curing is
It is designed to flow radially from the wafer center to the peripheral portion, to be guided to the outer chamber, and to be exhausted upward from the exhaust tube provided in the outer cover.
この発明における半導体製造装置は、硬化時に接着層よ
り発生するガスを、不活性ガスと共に外側チャンバーを
通して、排出チューブへ完全に回収、排気できる。In the semiconductor manufacturing apparatus according to the present invention, the gas generated from the adhesive layer during curing can be completely collected and exhausted to the exhaust tube through the outer chamber together with the inert gas.
以下、この発明の一実施例を図について説明する。第１
図において、１〜4,10は上記従来例と同様であり、11は
上部円筒部11aと下部円錐部11bを有する外カバー、12は
この外カバー11の内部に配置され上部円筒部12aと下部
円錐部12bを有する内カバーで、不活性ガス導入チュー
ブ９が連結されている。７はこの内カバー12の下面に取
付けられた多孔板である。また13は上記外カバー11の上
部に連結された不活性ガス排出チューブである。An embodiment of the present invention will be described below with reference to the drawings. First
In the figure, 1 to 4 and 10 are the same as the above-mentioned conventional example, 11 is an outer cover having an upper cylindrical portion 11a and a lower conical portion 11b, 12 is arranged inside the outer cover 11 and an upper cylindrical portion 12a and a lower portion. The inert gas introduction tube 9 is connected to the inner cover having the conical portion 12b. 7 is a perforated plate attached to the lower surface of the inner cover 12. Reference numeral 13 is an inert gas discharge tube connected to the upper portion of the outer cover 11.
次に動作について説明する。ダイシング済みのウエハー
１を貼付けたウエハー貼付シート２を取付けた固定材３
をレール４上に載せる。一方、一体となって上下動可能
な7,9,11,12,13を下降させ、チューブ９より不活性ガス
を内カバーのチャンバー121内に導入し、この内部の空
間を介して多孔板７の孔よりウエハーのセンターから周
辺方向へ放射状に不活性ガスを吹付けて外側チャンバー
111へ導入し、それとともに上記排出チューブ13より吸
引する。そしてその状態を保持したまま、ウエハー貼付
シート２の下方より紫外線10を照射して接着層を硬化さ
せ、その時の発生ガスを不活性ガスとともに排出チュー
ブ13より排出する。Next, the operation will be described. Fixing material 3 with a wafer sticking sheet 2 with a dicing wafer 1 stuck
On the rail 4. On the other hand, 7,9,11,12,13, which can move up and down as a unit, are lowered, an inert gas is introduced from the tube 9 into the chamber 121 of the inner cover, and the perforated plate 7 is passed through this internal space. Outer chamber by spraying inert gas radially from the center of the wafer through the holes of
It is introduced into 111 and is sucked from the discharge tube 13 together with it. While maintaining this state, the adhesive layer is cured by irradiating ultraviolet rays 10 from below the wafer sticking sheet 2, and the generated gas at that time is discharged from the discharge tube 13 together with the inert gas.
以上のようにこの発明によれば、硬化時の発生ガスを周
辺部へ向けて放射状に吹付けた不活性ガスとともに排出
できるように構成したので、発生したガスがウエハー表
面に付着するのを完全に防ぐことができ、高品質の歩留
りの高い半導体製造装置が得られる効果がある。As described above, according to the present invention, the generated gas at the time of curing can be discharged together with the inert gas radially blown toward the peripheral portion, so that the generated gas can be completely attached to the wafer surface. Therefore, there is an effect that a semiconductor manufacturing apparatus of high quality and high yield can be obtained.
第１図はこの発明の一実施例による半導体製造装置を示
す断面図、第２図は従来の半導体製造装置を示す断面図
である。 図中、１はウエハー、２はウエハー貼付シート、３は固
定材、４はレール、７は多孔板、９は不活性ガス導入チ
ューブ、10は紫外線、11は外カバー、12は内カバー、13
は不活性ガス排出チューブである。 なお、図中同一符号は同一又は相当部分を示す。FIG. 1 is a sectional view showing a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional semiconductor manufacturing apparatus. In the figure, 1 is a wafer, 2 is a wafer sticking sheet, 3 is a fixing material, 4 is a rail, 7 is a perforated plate, 9 is an inert gas introducing tube, 10 is ultraviolet rays, 11 is an outer cover, 12 is an inner cover, 13
Is an inert gas discharge tube. The same reference numerals in the drawings indicate the same or corresponding parts.
Claims (1)
ウエハーを紫外線硬化型ウエハー貼付シートに貼付け、
その上方より多孔板を介して不活性ガスを吹付け、下方
より紫外線を照射して上記シートのウエハーとの接着層
を硬化させるようにしたものにおいて、同心円状に内外
２つの環状の円錐形カバーを備え、その内カバーに不活
性ガス導入チューブを、外カバーに同排出チューブを連
結し、内側のチャンバー部に不活性ガスを導入し、これ
を下方へ放射状に吹付けて外側のチャンバー部に流入さ
せ、上記排出チューブより発生ガスと共に外部へ排気可
能としたことを特徴とする半導体製造装置。1. A semiconductor manufacturing process, wherein a dicing-completed wafer is attached to an ultraviolet-curable wafer attachment sheet,
An inert gas is blown from above through a perforated plate, and ultraviolet rays are irradiated from below to cure the adhesive layer of the sheet with the wafer. In the concentric circular two-sided conical cover The inner cover is connected to the inert gas introduction tube, and the outer cover is connected to the same discharge tube, and the inert gas is introduced to the inner chamber part, and this is radially sprayed downward to the outer chamber part. A semiconductor manufacturing apparatus, characterized in that it is allowed to flow in and exhausted to the outside together with the generated gas from the exhaust tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23617790A JPH07123115B2 (en) | 1990-09-05 | 1990-09-05 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23617790A JPH07123115B2 (en) | 1990-09-05 | 1990-09-05 | Semiconductor manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04115551A JPH04115551A (en) | 1992-04-16 |
| JPH07123115B2 true JPH07123115B2 (en) | 1995-12-25 |
Family
ID=16996911
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23617790A Expired - Lifetime JPH07123115B2 (en) | 1990-09-05 | 1990-09-05 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07123115B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005191532A (en) * | 2003-11-12 | 2005-07-14 | Sekisui Chem Co Ltd | Production process of semiconductor chip |
| JP2005191531A (en) * | 2003-11-12 | 2005-07-14 | Sekisui Chem Co Ltd | Production process of semiconductor chip |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100267155B1 (en) | 1996-09-13 | 2000-10-16 | 아끼구사 나오유끼 | Fabrication process of a semiconductor device including a dicing process of a semiconductor wafer and an apparatus the refore |
-
1990
- 1990-09-05 JP JP23617790A patent/JPH07123115B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005191532A (en) * | 2003-11-12 | 2005-07-14 | Sekisui Chem Co Ltd | Production process of semiconductor chip |
| JP2005191531A (en) * | 2003-11-12 | 2005-07-14 | Sekisui Chem Co Ltd | Production process of semiconductor chip |
| JP4674070B2 (en) * | 2003-11-12 | 2011-04-20 | 積水化学工業株式会社 | Manufacturing method of semiconductor chip |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04115551A (en) | 1992-04-16 |
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