JPS645884Y2 - - Google Patents
Info
- Publication number
- JPS645884Y2 JPS645884Y2 JP1984177260U JP17726084U JPS645884Y2 JP S645884 Y2 JPS645884 Y2 JP S645884Y2 JP 1984177260 U JP1984177260 U JP 1984177260U JP 17726084 U JP17726084 U JP 17726084U JP S645884 Y2 JPS645884 Y2 JP S645884Y2
- Authority
- JP
- Japan
- Prior art keywords
- tank
- semiconductor material
- processing liquid
- processing
- table surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 claims description 40
- 239000007788 liquid Substances 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 238000011161 development Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 10
- 239000007789 gas Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Description
【考案の詳細な説明】
（産業上の利用分野）
本考案はシリコンウエハーやガラスフオトマス
クなどの半導体材料の処理装置に関し、とくに半
導体材料の片面に処理液を吹上げる槽に関する。[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to a processing apparatus for semiconductor materials such as silicon wafers and glass photomasks, and particularly relates to a tank for spraying processing liquid onto one side of the semiconductor material.
（従来の技術）
従来、この種の槽には底部に処理液導入用の通
路が備えられ、且つこの槽に関連して真空により
半導体材料を吸着して槽の上に支持するチヤツク
が用いられる。そして、処理すべき面を下に向け
て支持された該材料に対し下方より処理液を吹き
上げて接触させ槽の頂部をオーバーフローした液
を槽の外周のとよに受け、それをタンクに戻し
て、循環するように構成されている。従来の槽３
０は第６図に示すように、カツプ状の形状を有
し、処理液が半導体材料の上側の裏面にまわり込
むのを防ぐため該材料の上側の周囲に窒素ガスを
吹き付けていた。(Prior Art) Conventionally, this type of tank is equipped with a passage for introducing a processing liquid at the bottom, and a chuck is used in conjunction with this tank to adsorb semiconductor material using a vacuum and support it on the tank. . Then, the treatment liquid is blown up from below and brought into contact with the material, which is supported with the surface to be treated facing downward, and the liquid that overflows the top of the tank is received by the outer periphery of the tank and returned to the tank. , configured to circulate. Conventional tank 3
As shown in FIG. 6, No. 0 had a cup-like shape, and nitrogen gas was blown around the upper side of the semiconductor material to prevent the processing liquid from going around the upper back surface of the semiconductor material.
（考案が解決しようとする問題点）
上記のように、従来の槽はカツプ状であつたた
め、処理すべき材料の裏面への処理液のまわり込
みがあり、従つて窒素ガスの吹付けが必要であつ
た。さらに半導体材料の面に当つた処理液はそこ
で半導体材料の面に沿う流れと下方にはね返る流
れを生じ、材料の面に対する処理液の接触に安定
性を欠くという問題点があつた。また反応中に発
生したガスの気泡および吹き上げられた処理液中
の気泡が半導体材料に付着し、吹上げられた処理
液の運動エネルギーではそれを取り除くだけの力
がなく、気泡による反応むらを生じさせた。(Problems that the invention aims to solve) As mentioned above, because the conventional tank was cup-shaped, the processing liquid sometimes got around to the back side of the material to be processed, and therefore it was necessary to spray nitrogen gas. It was hot. Furthermore, the processing liquid that hits the surface of the semiconductor material causes a flow along the surface of the semiconductor material and a flow that rebounds downward, resulting in a problem that the contact of the processing liquid with the surface of the material lacks stability. In addition, gas bubbles generated during the reaction and bubbles in the processing liquid blown up adhere to the semiconductor material, and the kinetic energy of the blown up processing liquid does not have enough force to remove them, resulting in uneven reaction due to the bubbles. I let it happen.
本考案の目的は上記従来技術の問題点を解消す
ることであつて、それ故半導体材料の裏面への処
理液のまわり込みおよび気泡の付着を防ぐと共
に、材料の面と処理液の接触が好適に行なわれる
構造の処理槽を提供することである。 The purpose of the present invention is to solve the above-mentioned problems of the conventional technology. Therefore, it is possible to prevent the processing liquid from getting around to the back surface of the semiconductor material and the adhesion of air bubbles, and to make it possible to prevent the processing liquid from coming into contact with the surface of the material. It is an object of the present invention to provide a treatment tank having a structure that is carried out in the following manner.
（問題点を解決するための手段）
本考案による処理槽１の特徴はその槽の頂部が
処理される半導体材料の面より広い面積を有して
中央に孔のある面、半導体材料より大きな外径を
有する環状の面からなるテーブル面４になつてい
ることであり、槽の頂部の内側の面は中央の孔に
向つて上方に先細の台錐状の面になつており、且
つ中央の孔の内周縁は上方に末広状になるように
断面がほぼ円弧状になつている。処理液はそのテ
ーブル面中央の孔を通して半導体材料の下向きの
表面に吹き上げられる。(Means for solving the problem) The processing tank 1 according to the present invention is characterized in that the top of the tank has a larger area than the surface of the semiconductor material to be processed and has a hole in the center, and the outer surface is larger than the semiconductor material. The table surface 4 is an annular surface having a diameter, and the inner surface of the top of the tank is a frustum-shaped surface that tapers upward toward the central hole. The inner circumferential edge of the hole has an approximately arcuate cross section so as to diverge upward. Processing liquid is blown up through a hole in the center of the table surface onto the downwardly facing surface of the semiconductor material.
（作用）
テーブル面中央の孔から吹上げられた処理液は
テーブル面と半導体材料の間の空間を半径方向外
方に層状に流れ、従つて下方にはね返る流れはな
いため処理液は半導体材料に好適に接触する。半
導体材料の外周縁では処理液はさらにテーブル面
に沿つて外方に層状に流れるので、表面張力によ
つて材料の裏側にまわり込もうとする力は外方に
流れようとする吸引力によつて打消され、まわり
込みが防止される。さらに半導体材料と槽のテー
ブル面の間を流れる処理液は半導体材料に付着し
ている気泡を取り除くことができる。(Function) The processing liquid blown up from the hole in the center of the table surface flows radially outward in a layered manner in the space between the table surface and the semiconductor material. Make suitable contact. At the outer edge of the semiconductor material, the processing liquid further flows outward in a layered manner along the table surface, so the force that tries to go around the back side of the material due to surface tension is absorbed by the suction force that tries to flow outward. It is canceled out, and wraparound is prevented. Furthermore, the processing liquid flowing between the semiconductor material and the table surface of the bath can remove air bubbles adhering to the semiconductor material.
（実施例）
次に図面を参照のもとに本考案の実施例に関し
説明する。第１図および第２図は本考案の一実施
例を示すものであつて、図示のように、この槽１
は底部２に処理液導入用の通路３が備えられる。
この例では槽１の頂部は環状の面からなるテーブ
ル面４になつており、その外周４ａの径は処理す
べきウエハーなどの材料ｓの外径より大きくなつ
ている。なお、テーブル面４の外周は必ずしも円
形である必要はない。テーブル面４の中央の孔５
を通して処理液は吹上げられる。この孔５の内周
縁は第１図に示すように上方に末広状になるよう
に断面がほぼ円弧状になつている。この孔５の空
間もテーブル面の面積の一部に含まれる。(Example) Next, an example of the present invention will be described with reference to the drawings. FIGS. 1 and 2 show an embodiment of the present invention, and as shown, this tank 1
The bottom portion 2 is provided with a passage 3 for introducing a processing liquid.
In this example, the top of the tank 1 is a table surface 4 consisting of an annular surface, and the diameter of the outer periphery 4a is larger than the outer diameter of the material s such as a wafer to be processed. Note that the outer periphery of the table surface 4 does not necessarily have to be circular. Hole 5 in the center of table surface 4
The processing liquid is blown up through the tube. As shown in FIG. 1, the inner peripheral edge of the hole 5 has a substantially arc-shaped cross section so as to diverge upwardly. The space of this hole 5 is also included in part of the area of the table surface.
好ましくは、頂部の内側の面、即ち槽の周壁６
より内側におけるテーブル面４の下側の面７は中
央の孔５に向つて上方に先細の台錐状の面になつ
ており、その傾斜角ｏは約30〜60度であるのが望
ましい。このように頂部の内側の面を形成するこ
とにより処理液中に生じる気泡が流出しやすい利
点がある。 Preferably, the inner surface of the top, i.e. the circumferential wall 6 of the tank
The lower surface 7 of the table surface 4 on the inner side is a frustum-shaped surface tapering upward toward the central hole 5, and the inclination angle o thereof is preferably about 30 to 60 degrees. By forming the inner surface of the top in this way, there is an advantage that air bubbles generated in the processing liquid can easily flow out.
また好ましい形態では、通路３の上端８は閉塞
され、その近傍の通路３の周壁に孔９が設けら
れ、そこから処理液を流出するように構成され
る。このようにすれば、処理液は槽１内の上部の
台錐状の面７を好適に伝つて孔５から吹上げられ
る。 In a preferred embodiment, the upper end 8 of the passage 3 is closed, and a hole 9 is provided in the peripheral wall of the passage 3 in the vicinity thereof, through which the processing liquid flows out. In this way, the processing liquid is suitably passed along the frustum-shaped surface 7 at the upper part of the tank 1 and blown up from the hole 5.
槽１は好ましくはテフロンで作られるが、他の
材質であつてもよい。処理される半導体材料ｓは
第１図に見られるように、真空チヤツクなどによ
りテーブル面４の上に近接して離れて支持され
る。その間の距離は通常、２〜５mmであるが、そ
の間隔は処理液の粘度によつて最適な値が決めら
れる。 The tank 1 is preferably made of Teflon, but may also be of other materials. The semiconductor material s to be processed is supported closely and remotely above a table surface 4, such as by a vacuum chuck, as seen in FIG. The distance between them is usually 2 to 5 mm, but the optimum value for the distance is determined depending on the viscosity of the processing liquid.
このように処理すべき材料ｓはテーブル面４に
近接するため、第３図に示すように処理液１０は
テーブル面４と材料の間を層流状態で流れ、材料
の外周縁における処理液の表面張力F1はそこか
らさらに外方に流れる吸引力F2によつて打消さ
れ、そのため処理液のまわり込みが防止される。
また、反応中に発生したガスや吹上げられた処理
液中の気泡が半導体材料の表面に付着しても、半
導体材料は層流状態で流れる処理液に接触するの
でそれらの気泡は取り除かれ、効果的に且つ均一
に接触する。所望により、第４図に示すように、
槽１を容器１１内に設置し且つ容器の周壁から内
側に突出する環状の蓋１２を設けて、テーブル面
４から流下した処理液を包囲する。そのようにす
れば、蓋１２で処理液のガス１０ａと空気を分離
し、それにより処理液は空気との接触が少なくな
り、劣化を遅らせることができる。分離の度合は
蓋１２の内周と槽の周壁６の外周の間隔１２ａで
きまる。 Since the material s to be treated is close to the table surface 4, the treatment liquid 10 flows in a laminar flow between the table surface 4 and the material as shown in FIG. The surface tension F 1 is canceled by the suction force F 2 that flows further outward from the surface tension F 1 , thereby preventing the processing liquid from flowing around.
Furthermore, even if gas generated during the reaction or bubbles in the processing liquid blown up adhere to the surface of the semiconductor material, the semiconductor material comes into contact with the processing liquid flowing in a laminar flow, so those bubbles are removed. Contact effectively and evenly. If desired, as shown in FIG.
A tank 1 is placed in a container 11, and an annular lid 12 is provided that projects inward from the peripheral wall of the container to surround the processing liquid flowing down from the table surface 4. In this way, the gas 10a of the processing liquid and air are separated by the lid 12, thereby reducing the contact of the processing liquid with air, and thereby delaying deterioration. The degree of separation is determined by the distance 12a between the inner circumference of the lid 12 and the outer circumference of the peripheral wall 6 of the tank.
なお、第５図は本考案による槽１がウエハーの
酸化膜窓開けエツチングに用いられた例を示すも
のであつて、その装置ではモータ１３によりベル
ト１４を介して回転される真空チヤツク１５でウ
エハーｓが槽１の上に支持され、チヤツク１５の
通路１６に連通する管１７には圧力センサ１８と
バルブ１９が在り、バルブ１９には窒素ガス導入
用の管２０と真空装置（図示せず）に連通した管
２１が設置されている。図中、２２はチヤツクを
包囲するホルダーであり、２３はチヤツクを僅か
に持上げるエアシリンダである。ホルダー２２に
は窒素ガス導入路２４が設けられる。槽１の周囲
にはテーブル面４を流下した処理液を受けるとよ
２５があり、とよ２５は流出管２６によりタンク
２７に連通する。２８はポンプであり、タンク内
の液はポンプ２８により管を介し、槽１の通路３
に導入される。 FIG. 5 shows an example in which the bath 1 according to the present invention is used for etching to open an oxide film window on a wafer. s is supported on the tank 1, and a tube 17 communicating with the passage 16 of the chuck 15 has a pressure sensor 18 and a valve 19, and the valve 19 has a tube 20 for introducing nitrogen gas and a vacuum device (not shown). A pipe 21 communicating with is installed. In the figure, 22 is a holder that surrounds the chuck, and 23 is an air cylinder that slightly lifts the chuck. A nitrogen gas introduction path 24 is provided in the holder 22 . Around the tank 1, there is a well 25 for receiving the processing liquid flowing down the table surface 4, and the well 25 communicates with a tank 27 through an outflow pipe 26. 28 is a pump, and the liquid in the tank is passed through a pipe by the pump 28 to the passage 3 of the tank 1.
will be introduced in
ウエハーをエツチングする際は、その表面を下
にしてテーブル面４の上に載せ、そこにチヤツク
１５を下降する。チヤツクがウエハーに接近する
と、圧力センサー１８で感知し、バルブ１９によ
り真空に切換え、ウエハーを吸着してテーブル４
上の所定の高さ位置に支持する。次いでエツチン
グ用の処理液が管２９から通路３を通つて槽１内
に導入され且つ上方に吹き上げられ、ウエハーの
下向きの表面に当つてその表面とテーブル面４の
間を外側に流れ、テーブル面４の縁からとよ２５
に流下し、流出管２６によりタンク２７に戻る。
時折、モータ１３を作動してチヤツク１５と共に
ウエハーが回転され、ウエハーの下面中央に留つ
た反応ガスが除去される。 When etching a wafer, the wafer is placed face down on the table surface 4, and the chuck 15 is lowered thereon. When the chuck approaches the wafer, it is detected by the pressure sensor 18, the valve 19 switches to vacuum, and the wafer is sucked and placed on the table 4.
It is supported at a predetermined height position above. The etching solution is then introduced into the tank 1 from the pipe 29 through the passage 3 and blown upward, hitting the downward facing surface of the wafer and flowing outward between that surface and the table surface 4, causing the etching solution to flow outwardly between the surface and the table surface 4. From the edge of 4 25
and returns to the tank 27 via the outflow pipe 26.
Occasionally, the motor 13 is operated to rotate the wafer together with the chuck 15 to remove the reactive gas remaining at the center of the lower surface of the wafer.
上記の例ではエツチングの場合が示されている
が、本考案の槽は回路パターンの現像処理または
バンプメツキなどにも同様に用いることができ
る。 Although the above example shows the case of etching, the tank of the present invention can be similarly used for circuit pattern development processing, bump plating, etc.
（考案の効果）
上記のように、本考案によれば、処理液は半導
体材料の面とその下のテーブル面の間を流れ、そ
の間に処理液と半導体材料の接触が行なわれるの
で、効果的に接触し、且つ材料の面に付着してい
たガスの気泡は除去されるので、むらのない均一
な処理が行なわれる。さらに、処理液が半導体材
料の裏面にまわり込むこともない。(Effects of the invention) As described above, according to the invention, the processing liquid flows between the surface of the semiconductor material and the table surface below, and the processing liquid and the semiconductor material come into contact during that time, so that it is effective. Gas bubbles that have come into contact with the surface of the material and have adhered to the surface of the material are removed, resulting in even and uniform processing. Furthermore, the processing liquid does not get around to the back surface of the semiconductor material.
第１図は本考案の一例による処理槽の縦断面
図、第２図はその平面図、第３図は第１図のＡ部
の拡大図、第４図は他の実施例の縦断面図、第５
図は本考案による槽が組込まれたエツチング装置
の縦断面図、そして第６図は従来の槽の縦断面図
である。
図中、１……槽、２……底部、３……通路、４
……テーブル面、５……テーブル面の孔、７……
テーブル面の下側面、８……通路の上端、１１…
…容器、１２……蓋。
Fig. 1 is a longitudinal sectional view of a processing tank according to an example of the present invention, Fig. 2 is a plan view thereof, Fig. 3 is an enlarged view of section A in Fig. 1, and Fig. 4 is a longitudinal sectional view of another embodiment. , 5th
The figure is a longitudinal sectional view of an etching apparatus incorporating a tank according to the present invention, and FIG. 6 is a longitudinal sectional view of a conventional tank. In the figure, 1...tank, 2...bottom, 3...passage, 4
... Table surface, 5 ... Hole in table surface, 7 ...
Lower side of table surface, 8... Upper end of passage, 11...
...Container, 12...Lid.
Claims (1)
はメツキ等の処理を施こすための槽であつて、
前記槽の底部に形成された通路を通して処理液
を導入し且つ前記槽の頂部上に離れて支持され
た半導体材料に対し処理液が吹上げられるよう
になつている槽において、前記槽の頂部は中央
に前記処理液が通過する孔があり、且つ処理さ
れる半導体材料の面より広い面積を有するテー
ブル面になつており、前記テーブル面は処理さ
れる半導体材料より大きな外径の環状の面から
なり、さらに前記槽の頂部の内側の面は前記中
央の孔に向つて上方に先細の台錐状の面になつ
ており、且つ前記中央の孔の内周縁は上方に末
広状になるように断面がほぼ円弧状になつてい
ることを特徴とする半導体材料の処理槽。 (2) 実用新案登録請求の範囲第１項に記載の槽に
おいて、前記通路の頂部は閉塞されてその近傍
の周壁の孔から処理液が吹出すようになつてい
る半導体材料の処理槽。 (3) 実用新案登録請求の範囲第１項に記載の槽に
おいて、前記テーブル面から流下した処理液の
ガスと空気を分離するため前記槽を包囲する容
器の内周には内側に突出する環状の蓋が備えら
れている半導体材料の処理槽。[Scope of claims for utility model registration] (1) A tank for subjecting one side of a semiconductor material to processing such as development, etching or plating,
In a tank, the processing liquid is introduced through a passage formed in the bottom of the tank and is adapted to be blown up onto a semiconductor material supported remotely on the top of the tank, the top of the tank comprising: There is a hole in the center through which the processing liquid passes, and the table surface has a larger area than the surface of the semiconductor material to be processed, and the table surface has an annular surface having an outer diameter larger than that of the semiconductor material to be processed. Further, the inner surface of the top of the tank is a frustum-shaped surface that tapers upward toward the central hole, and the inner peripheral edge of the central hole is configured to diverge upward. A semiconductor material processing tank characterized by having a substantially arc-shaped cross section. (2) Utility Model Registration A tank for processing semiconductor materials according to claim 1, wherein the top of the passage is closed and the processing liquid is blown out from holes in the peripheral wall near the top. (3) Utility Model Registration In the tank according to claim 1, the container surrounding the tank has an annular shape projecting inward in order to separate gas and air from the processing liquid flowing down from the table surface. A processing tank for semiconductor materials equipped with a lid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984177260U JPS645884Y2 (en) | 1984-11-21 | 1984-11-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984177260U JPS645884Y2 (en) | 1984-11-21 | 1984-11-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6192053U JPS6192053U (en) | 1986-06-14 |
| JPS645884Y2 true JPS645884Y2 (en) | 1989-02-14 |
Family
ID=30734831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1984177260U Expired JPS645884Y2 (en) | 1984-11-21 | 1984-11-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS645884Y2 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5329677A (en) * | 1976-08-30 | 1978-03-20 | Burroughs Corp | Method of and apparatus for chemically treating specimen only on one side thereof |
| JPS57110674A (en) * | 1980-12-29 | 1982-07-09 | Fujitsu Ltd | Surface treating device |
| JPS58210170A (en) * | 1982-06-01 | 1983-12-07 | Seiichiro Sogo | Etching device of thin metallic film or oxidized film |
-
1984
- 1984-11-21 JP JP1984177260U patent/JPS645884Y2/ja not_active Expired
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5329677A (en) * | 1976-08-30 | 1978-03-20 | Burroughs Corp | Method of and apparatus for chemically treating specimen only on one side thereof |
| JPS57110674A (en) * | 1980-12-29 | 1982-07-09 | Fujitsu Ltd | Surface treating device |
| JPS58210170A (en) * | 1982-06-01 | 1983-12-07 | Seiichiro Sogo | Etching device of thin metallic film or oxidized film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6192053U (en) | 1986-06-14 |
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