JPH0411130B2 - - Google Patents
Info
- Publication number
- JPH0411130B2 JPH0411130B2 JP60268376A JP26837685A JPH0411130B2 JP H0411130 B2 JPH0411130 B2 JP H0411130B2 JP 60268376 A JP60268376 A JP 60268376A JP 26837685 A JP26837685 A JP 26837685A JP H0411130 B2 JPH0411130 B2 JP H0411130B2
- Authority
- JP
- Japan
- Prior art keywords
- node
- gallium arsenide
- normally
- arsenide semiconductor
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0952—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using Schottky type FET MESFET
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60268376A JPS62130021A (ja) | 1985-11-30 | 1985-11-30 | ガリウム砒素半導体集積回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60268376A JPS62130021A (ja) | 1985-11-30 | 1985-11-30 | ガリウム砒素半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62130021A JPS62130021A (ja) | 1987-06-12 |
JPH0411130B2 true JPH0411130B2 (enrdf_load_stackoverflow) | 1992-02-27 |
Family
ID=17457633
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60268376A Granted JPS62130021A (ja) | 1985-11-30 | 1985-11-30 | ガリウム砒素半導体集積回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62130021A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3335819B2 (ja) * | 1995-11-13 | 2002-10-21 | 沖電気工業株式会社 | ラッチ回路 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5492158U (enrdf_load_stackoverflow) * | 1977-12-13 | 1979-06-29 | ||
JPS58130620A (ja) * | 1982-01-29 | 1983-08-04 | Toshiba Corp | 論理回路 |
-
1985
- 1985-11-30 JP JP60268376A patent/JPS62130021A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS62130021A (ja) | 1987-06-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4161663A (en) | High voltage CMOS level shifter | |
US3010031A (en) | Symmetrical back-clamped transistor switching sircuit | |
US4469962A (en) | High-speed MESFET circuits using depletion mode MESFET signal transmission gates | |
JPS62114325A (ja) | ゲ−ト回路 | |
EP0084844B1 (en) | Fet circuits | |
US4725743A (en) | Two-stage digital logic circuits including an input switching stage and an output driving stage incorporating gallium arsenide FET devices | |
US4716311A (en) | Direct coupled FET logic with super buffer output stage | |
US4596939A (en) | Schmitt trigger input gate having delayed feedback for pulse width discrimination | |
US4387309A (en) | Input stage for N-channel junction field effect transistor operational amplifier | |
US4712022A (en) | Multiple input OR-AND circuit for FET logic | |
US4954730A (en) | Complementary FET circuit having merged enhancement/depletion FET output | |
JPH0411130B2 (enrdf_load_stackoverflow) | ||
US4900953A (en) | Logic circuit employing field effect transistor having junction with rectifying characteristic between gate and source | |
US4752701A (en) | Direct coupled semiconductor logic circuit | |
JPH0411131B2 (enrdf_load_stackoverflow) | ||
US3469114A (en) | Electronic switch and control circuit therefor | |
EP0425063B1 (en) | MESFET logic circuit operable over a wide temperature range | |
JP2545712B2 (ja) | ガリウム砒素半導体集積回路 | |
US5291077A (en) | Semiconductor logical FET device | |
JPH02182029A (ja) | 半導体装置 | |
JPH0247638Y2 (enrdf_load_stackoverflow) | ||
JPS61186018A (ja) | 電界効果トランジスタ論理回路 | |
JPH0625063Y2 (ja) | 電流切換形論理回路 | |
JP3024155B2 (ja) | インバータ回路 | |
JPH0145162Y2 (enrdf_load_stackoverflow) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |