JPH0410745B2 - - Google Patents

Info

Publication number
JPH0410745B2
JPH0410745B2 JP59268017A JP26801784A JPH0410745B2 JP H0410745 B2 JPH0410745 B2 JP H0410745B2 JP 59268017 A JP59268017 A JP 59268017A JP 26801784 A JP26801784 A JP 26801784A JP H0410745 B2 JPH0410745 B2 JP H0410745B2
Authority
JP
Japan
Prior art keywords
diffusion layer
input terminal
semiconductor substrate
well
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59268017A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61144857A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP59268017A priority Critical patent/JPS61144857A/ja
Publication of JPS61144857A publication Critical patent/JPS61144857A/ja
Publication of JPH0410745B2 publication Critical patent/JPH0410745B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59268017A 1984-12-19 1984-12-19 Mos型集積回路装置 Granted JPS61144857A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59268017A JPS61144857A (ja) 1984-12-19 1984-12-19 Mos型集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59268017A JPS61144857A (ja) 1984-12-19 1984-12-19 Mos型集積回路装置

Publications (2)

Publication Number Publication Date
JPS61144857A JPS61144857A (ja) 1986-07-02
JPH0410745B2 true JPH0410745B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-02-26

Family

ID=17452737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59268017A Granted JPS61144857A (ja) 1984-12-19 1984-12-19 Mos型集積回路装置

Country Status (1)

Country Link
JP (1) JPS61144857A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2821128B2 (ja) * 1988-01-29 1998-11-05 日本電気株式会社 半導体入力保護装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6134967A (ja) * 1984-05-03 1986-02-19 デイジタル イクイプメント コ−ポレ−シヨン Vlsi集積回路装置用の入力保護構成体

Also Published As

Publication number Publication date
JPS61144857A (ja) 1986-07-02

Similar Documents

Publication Publication Date Title
US5925922A (en) Depletion controlled isolation stage
KR0159451B1 (ko) 반도체장치의 보호회로
US6365941B1 (en) Electro-static discharge circuit of semiconductor device, structure thereof and method for fabricating the structure
JPH0151070B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US3469155A (en) Punch-through means integrated with mos type devices for protection against insulation layer breakdown
KR100311578B1 (ko) 반도체장치
US5614752A (en) Semiconductor device containing external surge protection component
US5734541A (en) Low voltage silicon controlled rectifier structure for ESD input pad protection in CMOS IC's
JP2822915B2 (ja) 半導体装置
JP3559075B2 (ja) Cmos技術の集積電子回路用の極性反転保護装置
US4922316A (en) Infant protection device
JPH0410745B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2611639B2 (ja) 半導体装置
US6512663B1 (en) Electrostatic protection device and electrostatic protection circuit
US5880514A (en) Protection circuit for semiconductor device
KR19980043416A (ko) 이에스디(esd) 보호 회로
JP3425574B2 (ja) 半導体集積回路の入出力保護装置
KR0151075B1 (ko) 반도체장치의 정전 방전 보호회로
JP2555890B2 (ja) 半導体集積回路の入力保護装置
JPS63301555A (ja) 半導体装置
JPH1168043A (ja) Esd保護回路
US20020005526A1 (en) Electrostatic discharge protective structure and a method for producing it
JPH0997844A (ja) 半導体集積回路装置
JPH0468576A (ja) 半導体装置
JP4006023B2 (ja) 集積回路

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees