JPH0410670A - Light-emitting diode - Google Patents
Light-emitting diodeInfo
- Publication number
- JPH0410670A JPH0410670A JP2114194A JP11419490A JPH0410670A JP H0410670 A JPH0410670 A JP H0410670A JP 2114194 A JP2114194 A JP 2114194A JP 11419490 A JP11419490 A JP 11419490A JP H0410670 A JPH0410670 A JP H0410670A
- Authority
- JP
- Japan
- Prior art keywords
- emitting chip
- light emitting
- lead
- light
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920005989 resin Polymers 0.000 claims abstract description 18
- 239000011347 resin Substances 0.000 claims abstract description 18
- 238000007789 sealing Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 5
- 239000003822 epoxy resin Substances 0.000 abstract description 4
- 229920000647 polyepoxide Polymers 0.000 abstract description 4
- 238000000465 moulding Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
本発明は、発光チップがリードフレームに接合され樹脂
封止された発光ダイオードに関する。The present invention relates to a light emitting diode in which a light emitting chip is bonded to a lead frame and sealed with resin.
従来、発光ダイオード（以下ｒＬＥＤ」という）用リー
ドフレームは、正負一対の電極部が両側面に分かれた発
光チップに適するものとして、第４図及び第５図に示し
たようなものが知られている。
ここで、第４図はリードフレームの斜視図であり、第５
図は第４図のリードフレームに発光チップが接合された
状態を示した部分縦断面図である。
このリードフレーム３０は間隔を隔てて並列に配設され
、正負一対の電極を形成するリード部材３１．３６によ
り構成されている。一方のリード部材３１にはその先端
部３２に発光チップ３８を載置する平坦部３３と載置さ
れる発光チップ３８の側周面をその近傍で囲むように、
すり林状の反射部３４が一体的に形成されている。
発光チップ３８め一方の面側にある電極部は一方のリー
ド“部材３１の平坦部３３に載置され、導電性ペースト
によって接合されている。そして、発光チップ３８の他
方の面側にある電極部と他方のリード部材３６の先端部
３７とは金線３９等によりワイヤボンディングされ接続
されている。
ところで、近年、同一面側に正負一対の電極部をもつ所
謂フリップチップ方式のにａＮ （窒化ガリウム）を用
いて発光チップとした青色発光ＬＥＤが開発された。
上記発光チップを用いたＬＥＤのリードフレームとして
は、第６図に示したように、先端が平坦な正負一対の電
極を形成するリード部材４１，４６により構成されたリ
ードフレーム４０が使用されている。このリードフレー
ム４０には両リード部材４１．４６の平坦な先端面がほ
ぼ同じ位置になるように並列に配設されている。そして
、それら両リード部材４１．４６の先端面上に発光チッ
プ４８の両電極部が載置され、それぞれ導電性ペースト
により接合されている。
この後、エポキシ樹脂等の透明樹脂でレンズ部材４９を
成形してＬＥＤ５０を形成している。Conventionally, lead frames for light emitting diodes (hereinafter referred to as rLEDs) as shown in FIGS. 4 and 5 have been known as being suitable for light emitting chips in which a pair of positive and negative electrode portions are separated on both sides. There is. Here, FIG. 4 is a perspective view of the lead frame, and FIG.
This figure is a partial vertical sectional view showing a state in which a light emitting chip is bonded to the lead frame of FIG. 4. This lead frame 30 includes lead members 31 and 36 arranged in parallel at intervals and forming a pair of positive and negative electrodes. One lead member 31 has a flat part 33 on which the light emitting chip 38 is placed at its tip 32 and a flat part 33 on which the light emitting chip 38 is placed, and a flat part 33 surrounding the side peripheral surface of the light emitting chip 38 placed therein.
A forest-like reflecting section 34 is integrally formed. The electrode part on one side of the light emitting chip 38 is placed on the flat part 33 of one lead member 31 and bonded with conductive paste.The electrode part on the other side of the light emitting chip 38 and the tip 37 of the other lead member 36 are wire-bonded and connected by a gold wire 39 or the like.In recent years, a so-called flip-chip method having a pair of positive and negative electrodes on the same side has been developed. A blue light-emitting LED was developed using a light-emitting chip using gallium.The lead frame for an LED using the above-mentioned light-emitting chip consists of a pair of positive and negative electrodes with flat tips, as shown in Figure 6. A lead frame 40 composed of lead members 41 and 46 is used.In this lead frame 40, both lead members 41 and 46 are arranged in parallel so that their flat end surfaces are at approximately the same position. Then, both electrode portions of the light emitting chip 48 are placed on the tip surfaces of both lead members 41 and 46, and are bonded to each other with conductive paste.After this, the lens member 49 is bonded with a transparent resin such as epoxy resin. The LED 50 is formed by molding.
上述のＧａＮを用いた発光チップ４８は、絶縁物である
サファイヤ基板上にｎ−ＧａＮ及びＩＧａＮを積層し、
１−ＧａＨの一部に設けられた孔内に電極金属を蒸着し
、その上にはんだをバンプさせてｎ−ＧａＮまで電極部
通じさせることにより、１−ＧａＮ側の表面に形成した
電極部１ＧａＮとｎ−ＧａＮまで通じた電極部による両
電極部が形成され、この発光チップ４８がサファイヤ基
板側を上にして、１−ＧａＮ層上の両電極部がリード部
材４１．４６にそれぞれ接合されている。
そして、通電されてこの発光チップ４８が発光し、その
青色光は、発光チップ４８を構成しているサファイヤ基
板及びレンズ部材４９中を通過して空気中へ放射される
。
ところが、一部の光は発光チップ４８のサファイヤ基板
とレンズ部材４９との界面で入射角が４２°を越えると
全反射し、この発光チップ４８の側面方向へ逃げるため
、光が周囲に分散され、上記青色光の取り出し効率が非
常に悪く、高輝度化を図ることが難しいという問題があ
った。
ここで、特開昭６３−１５４８３号公報「発光ダイオー
ド用リードフレーム」にて開示されたように、上述の問
題点の解決を目指したリードフレームが提案されている
。
このリードフレームにおいては、同一面側に正負一対の
電極部をもつ発光チップに適し、その先端部に設けられ
た反射部により光の取り出し効率を改善している。
一般に、このリードフレームの反射部は金属製のリード
フレームをプレス成形する工程のうち絞り加工工程で形
成される。
しかしながら、絞り加工上の制約からあまり深い形状や
複雑な形状の反射部を形成することができなかった。又
、絞り加工にて形成された反射部の表面平滑性を良くす
ることには限界があり、反射率が必ずしも高くなかった
。
本発明は、上記の課題を解決するために成されたもので
あり、その目的とするところは、絞り加工を省いた簡単
な形状のリードフレームと別に樹脂成形した反射部材を
用いて光の取り出し効率が良いＬＥＤを提供することで
ある。The light emitting chip 48 using GaN described above has n-GaN and IGaN stacked on a sapphire substrate, which is an insulator, and
An electrode part 1GaN is formed on the surface of the 1-GaN side by depositing an electrode metal in a hole provided in a part of 1-GaH and bumping solder on it to make the electrode part pass through to the n-GaN. Both electrode portions are formed by the electrode portions connected to the n-GaN layer, and the light emitting chip 48 is placed with the sapphire substrate side facing up, and both electrode portions on the 1-GaN layer are joined to the lead members 41 and 46, respectively. There is. When energized, the light emitting chip 48 emits light, and the blue light passes through the sapphire substrate and lens member 49 that constitute the light emitting chip 48 and is emitted into the air. However, when the incident angle exceeds 42° at the interface between the sapphire substrate of the light emitting chip 48 and the lens member 49, some of the light is totally reflected and escapes toward the side of the light emitting chip 48, so that the light is dispersed to the surroundings. However, there was a problem in that the blue light extraction efficiency was very poor and it was difficult to achieve high brightness. Here, a lead frame aiming at solving the above-mentioned problems has been proposed as disclosed in Japanese Patent Application Laid-Open No. 63-15483 "Lead frame for light emitting diode". This lead frame is suitable for a light-emitting chip having a pair of positive and negative electrode parts on the same side, and improves light extraction efficiency by a reflective part provided at its tip. Generally, the reflective portion of this lead frame is formed in the drawing process of the process of press forming a metal lead frame. However, due to limitations in the drawing process, it has not been possible to form a reflective portion with a very deep or complicated shape. Furthermore, there is a limit to improving the surface smoothness of the reflective portion formed by drawing, and the reflectance is not necessarily high. The present invention has been made to solve the above problems, and its purpose is to extract light using a lead frame with a simple shape that does not require drawing processing and a reflective member molded separately from resin. The objective is to provide efficient LEDs.
上記課題を解決するための発明の構成は、発光チップと
、前記発光チップから放射される光を前方に反射する略
円錐状の反射面と、該反射面に続く底面から前記反射面
の反対側に開口した長大とが成形された反射部材き、前
記反射部材の長穴に嵌合した先端部と、該先端部の上部
端面に設けられた平坦部と、前記先端部の根本に設けら
れた段部とから成る正負一対の電極を形成するリード部
材と、前記発光チップを前記平坦部に接合し、少なくと
も前記発光チップ及び前記反射部材の一部を樹脂により
封止して成るレンズ部材とを備えたことを特徴とする。The structure of the invention for solving the above problems includes a light emitting chip, a substantially conical reflecting surface that reflects light emitted from the light emitting chip forward, and a side opposite to the reflecting surface from a bottom surface following the reflecting surface. a reflective member formed with an elongated opening, a tip portion fitted into the long hole of the reflective member, a flat portion provided on an upper end surface of the tip portion, and a flat portion provided at the root of the tip portion; a lead member forming a pair of positive and negative electrodes consisting of a stepped portion; and a lens member formed by bonding the light emitting chip to the flat portion and sealing at least a part of the light emitting chip and the reflective member with resin. It is characterized by having
反射部材には発光チップから放射される光を前方に反射
する略円錐状の反射面と、その反射面に続く底面から反
対側に開口した長穴とが成形される。
又、正負一対のリード部材には上記反射部材の長穴に嵌
合する先端部と、その先端部の上部端面に設けられた平
坦部と、その先端部の根本に設けられた段部とが形成さ
れる。
そして、上記発光チップを上記平坦部に接合し、レンズ
部材は少なくとも上記発光チップ及び上記反射部材の一
部をその樹脂により封止する。
このため、リードフレームを構成する正負一対の電極を
形成するリード部材自身の形状は簡単で、これらリード
部材の先端部は反射部材の長大に嵌合し、その段部が当
接するまで反射部材に挿入されて位置決めされるので、
挿入後におけるリード部材と反射部材との相対位置が正
確となる。
又、反射部材はリード部材とは別に成形されるので、そ
の反射面は平滑にでき、その設計形状の自由度が大きい
のでリード部材に接合された発光チップから放射される
光の取り出し効率が良いＬＥＤとなる。The reflecting member is formed with a substantially conical reflecting surface that reflects light emitted from the light emitting chip forward, and an elongated hole that opens on the opposite side from the bottom surface following the reflecting surface. Further, the pair of positive and negative lead members includes a tip portion that fits into the elongated hole of the reflective member, a flat portion provided on the upper end surface of the tip portion, and a step portion provided at the root of the tip portion. It is formed. Then, the light emitting chip is bonded to the flat portion, and the lens member seals at least a portion of the light emitting chip and the reflecting member with the resin. For this reason, the shape of the lead members themselves that form the pair of positive and negative electrodes constituting the lead frame is simple, and the tips of these lead members fit into the long length of the reflective member until the stepped portions come into contact with the reflective member. As it is inserted and positioned,
The relative position of the lead member and the reflective member after insertion becomes accurate. In addition, since the reflective member is molded separately from the lead member, its reflective surface can be made smooth and there is a large degree of freedom in its design shape, so the light emitted from the light emitting chip bonded to the lead member can be extracted efficiently. It becomes an LED.
以下、本発明を具体的な実施例に基づいて説明する。
第２図は本発明の具体的な一実施例に係るＬＥＤのリー
ドフレームを構成するリード部材を樹脂成形された反射
部材に挿入し、リード部材先端に発光チップを接合した
状態を示した縦断面図である。
リードフレーム１０は間隔を隔てて並列に配設された正
負一対の電極を形成するリード部材１１゜１６により構
成されている。そして、両リード部材１１．１６にはそ
れらの先端部１２．１７の上部端面には発光チップ２８
を載置する平坦部１３゜１８が形成されている。又、先
端部１２．１７の根本には段部１４，１９が形成されて
いる。
２１は反射部材であり、その反射部材２１は第３図（ａ
）、第３図（ｂ）及び第３図（Ｃ）にその平面図、正面
中央縦断面図及び側面中央縦断面図をそれぞれ示したよ
うに樹脂の射出成形により形成されている。
上記反射部材２１はリード部材１１．１６の先端部１２
．．１７の幅及び厚みに嵌合する長穴２２を有し、その
長穴２２の一方の端部には、その周囲から外側に傾斜し
た反射面２３が形成されている。又、長穴２２の他方の
端部には、リード部材１１．１６の段部１４，１９に対
する当接面２４゜２５が形成されている。
このように成形された反射部材２１の長穴２２にリード
部材１１．１６の先端部１２．１７が挿入され、リード
部材１１．１６の段部１４．１９が反射部材２１の当接
面２４．２５に当接して各々の相対位置が決定される。
Ｇ’ａ Ｎ青色発光チップである発光チップ２８はす７
フイヤ基板２８１上にｎ−ＧａＮ層２８２、更に、Ｚｎ
をドープして補償した高抵抗１−ＧａＮ層２８３を成長
させて作られている。
そして、１−ＧａＮ層２８３の一端側にはその部に１−
ＧａＮ層２８３を貫通して設けられた孔内に電極部が１
−ＧａＮ層２８３の表面とほぼ同一となるように設けら
れており、他端側には１ＧａＮ層２８３上に電極部が形
成されている。
この発光チップ２８はｎ−ＧａＮ層２８２の電極部が負
極となるリード部材１１の平坦部１３上に、１−ＧａＮ
層２８３の電極部が正極となるリード部材１６の平坦部
１８上に載置されそれぞれはんだバンブにより接合され
ている。
上述のようにして、反射部材２１が成形され、その反射
部材２１の長穴２２にリード部材１１゜１６の先端部１
２．１７が挿入され、発光チップ２８・がリード部材１
１．１６の平坦部１３．１８に接合された後、その反射
部材２１の全周を囲むように、更にエポキシ樹脂等の透
明樹脂でレンズ部材２９を成形して、第１図に示したよ
うなＬＥＤ２０を形成する。
そして、ＬＥＤ２０のリード部材１１．１６に電圧を印
加し電流を流した。すると、その発光チップ２８からの
青色光はその代表的な光路を矢印で示したように、発光
チップ２８の表面から出た光に加えて、その発光チップ
２８の端面から出た光も反射部材２１に設けられた反射
面２３により反射されてＬ’ＥＤ２０から前方へ照射さ
れる。
ここで、樹脂成形された反射部材２１においては、リー
ド部材１１．１６と正確に位置決めされているので、発
光チップ２８から出た光のうち反射部材２１０反射面２
３にて反射された光おいても設計された光路を通ること
になる。
又、反射部材２工の反射面２３を平滑で鏡面に近づける
ことができると共に複雑な形状も成形可能であるので、
反射効率を向上させることが可能となる。
更に、反射部材２１を成形するための樹脂材料を白色等
に着色することにより反射面２３の反射率を上昇するこ
とも容易である。
尚、レンズ部材２９の樹脂材料であるエポキシ樹脂の硬
化温度が高温のものを使用する場合には、反射部材２１
を成形するための樹脂材料としては耐熱性に優れた熱可
塑性エンジニアリングプラスチックである例えば、ポリ
イミド、ポリカーボネイト、ポリフェニレンサルファイ
ド、ポリエチレンテレフタレート、ポリブチレンテレフ
タレート樹脂等を用いる。
更に、上述の発光チップとしては同一面側に正負一対の
電極部をもつＧａＮ等に限らず両側面に正負一対の電極
をもつものであっても当然適用することができる。
本発明のＬＥＤにおいては、リードフレームを構成する
簡単な形状の正負一対の電極を形成するリード部材を反
射部材の長穴に嵌合させ、上記リード部材の段部を反射
部材の当接面に当接する位置まで挿入することにより各
々位置決めが完了する。
従って、金属製のリードフレームを構成するリド部材に
プラスチックの反射部材を一体的に成形（インサート成
形）等する場合のように、リードフレームを固定する複
雑な形状の金型を必要としないので、コストダウンを図
ることが可能となる。
又、反射部材のみを樹脂成形する金型は簡単な構造にて
構成できるので、形状変更が容易であると共に反射面の
精度が向上され、更に、パリ等の発生も抑えることがで
きる。The present invention will be described below based on specific examples. FIG. 2 is a longitudinal section showing a state in which a lead member constituting a lead frame of an LED according to a specific embodiment of the present invention is inserted into a resin-molded reflective member, and a light emitting chip is bonded to the tip of the lead member. It is a diagram. The lead frame 10 is composed of lead members 11 and 16 forming a pair of positive and negative electrodes arranged in parallel at intervals. In both lead members 11.16, a light emitting chip 28 is provided on the upper end surface of the tip portion 12.17.
A flat portion 13°18 is formed on which the holder is placed. Further, step portions 14 and 19 are formed at the base of the tip portion 12.17. 21 is a reflective member, and the reflective member 21 is shown in FIG.
), and is formed by injection molding of resin, as shown in a plan view, a front central vertical cross-sectional view, and a side central vertical cross-sectional view in FIGS. 3(b) and 3(C), respectively. The reflective member 21 is connected to the tip 12 of the lead member 11.16.
．． ．． 17, and a reflective surface 23 is formed at one end of the elongated hole 22, and is inclined outward from its periphery. Further, at the other end of the elongated hole 22, contact surfaces 24 and 25 are formed for contacting the stepped portions 14 and 19 of the lead member 11.16. The tip 12.17 of the lead member 11.16 is inserted into the elongated hole 22 of the reflective member 21 formed in this way, and the stepped portion 14.19 of the lead member 11.16 is inserted into the abutment surface 24.1 of the reflective member 21. 25, the relative position of each is determined. G'a N Blue light emitting chip 28 Lotus 7
An n-GaN layer 282 is formed on the fire substrate 281, and a Zn
It is made by growing a high resistance 1-GaN layer 283 doped with and compensated for. Then, on one end side of the 1-GaN layer 283, 1-
An electrode portion is provided in a hole provided through the GaN layer 283.
- It is provided so as to be substantially the same as the surface of the GaN layer 283, and an electrode portion is formed on the 1GaN layer 283 on the other end side. This light emitting chip 28 is mounted on the flat part 13 of the lead member 11 in which the electrode part of the n-GaN layer 282 becomes the negative electrode.
The electrode portions of the layer 283 are placed on the flat portions 18 of the lead member 16, which serve as positive electrodes, and are connected to each other by solder bumps. As described above, the reflective member 21 is molded, and the tip portion 1 of the lead member 11° 16 is inserted into the elongated hole 22 of the reflective member 21.
2.17 is inserted, and the light emitting chip 28 is attached to the lead member 1.
1.16, a lens member 29 is further molded with a transparent resin such as epoxy resin so as to surround the entire circumference of the reflective member 21, as shown in FIG. A LED 20 is formed. Then, a voltage was applied to the lead members 11.16 of the LED 20 to cause current to flow therethrough. Then, as the typical optical path of the blue light from the light emitting chip 28 is shown by the arrow, in addition to the light emitted from the surface of the light emitting chip 28, the light emitted from the end face of the light emitting chip 28 also passes through the reflective member. The light is reflected by the reflective surface 23 provided on the L'ED 21 and irradiated forward from the L'ED 20. Here, since the resin-molded reflective member 21 is accurately positioned with the lead member 11.16, the reflective member 210 and the reflective surface 2 of the light emitted from the light emitting chip 28
The light reflected at point 3 also passes through the designed optical path. In addition, the reflective surface 23 of the reflective member 2 can be made smooth and close to a mirror surface, and complex shapes can also be formed.
It becomes possible to improve reflection efficiency. Furthermore, it is also easy to increase the reflectance of the reflective surface 23 by coloring the resin material for molding the reflective member 21 white or the like. In addition, when using an epoxy resin that is a resin material of the lens member 29 whose curing temperature is high, the reflective member 21
As the resin material for molding, thermoplastic engineering plastics with excellent heat resistance, such as polyimide, polycarbonate, polyphenylene sulfide, polyethylene terephthalate, and polybutylene terephthalate resins, are used. Furthermore, the above-mentioned light emitting chip is not limited to GaN, etc., which has a pair of positive and negative electrodes on the same side, but can also be applied to a chip that has a pair of positive and negative electrodes on both sides. In the LED of the present invention, a lead member forming a pair of simple-shaped positive and negative electrodes constituting a lead frame is fitted into an elongated hole of a reflective member, and the stepped portion of the lead member is brought into contact with a contact surface of the reflective member. The respective positioning is completed by inserting them until they come into contact. Therefore, unlike when a plastic reflective member is integrally molded (insert molding) into a lid member that constitutes a metal lead frame, a mold with a complicated shape for fixing the lead frame is not required. It becomes possible to aim at cost reduction. Further, since the mold for molding only the reflective member with resin can be configured with a simple structure, the shape can be easily changed, the precision of the reflective surface is improved, and the occurrence of flakes and the like can be suppressed.
本発明は、反射面と長穴とが樹脂成形された反射部材と
、その反射部材の長穴に嵌合する先端部と、その先端部
の上部端面に設けられた平坦部と、その先端部の根本に
設けられた段部とから成り、正負一対の電極を形成する
リード部材と、発光チップを平坦部に接合し、少なくと
も発光チップ及び反射部材の一部を樹脂により封止して
成るレンズ部材とを備えており、別々にリード部材と反
射部材とを構成し、リード部材を反射部材に挿入するの
みで相対位置が正確に決定される。そして、リード部材
の平坦部に発光チップを接合した後、レンズ部材の樹脂
により少なくとも発光チップ及び反射部材の一部が封止
される。
従って、リード部材に接合される発光チップ２反射部材
の反射面との相対位置関係が正確となり、光の取り出し
効率が良く高輝度化が図れると共に製品毎のバラツキが
少なく極めて安定した性能を有するＬＥＤが構成できる
。
又、反射部材等の単体の金型は簡単な構造にて構成でき
、形状変更も容易であり、安価なＬＥＤを提供できると
いう効果がある。The present invention provides a reflective member in which a reflective surface and a long hole are molded with resin, a tip portion that fits into the long hole of the reflective member, a flat portion provided on an upper end surface of the tip portion, and a flat portion provided on the upper end surface of the tip portion. a step part provided at the base of the lens, a lead member forming a pair of positive and negative electrodes, a light emitting chip bonded to a flat part, and at least a part of the light emitting chip and the reflecting member being sealed with resin. The lead member and the reflecting member are separately constructed, and the relative position can be accurately determined simply by inserting the lead member into the reflecting member. After the light emitting chip is bonded to the flat portion of the lead member, at least a portion of the light emitting chip and the reflecting member are sealed with the resin of the lens member. Therefore, the relative positional relationship between the light emitting chip 2 bonded to the lead member and the reflective surface of the reflective member is accurate, and the LED has high light extraction efficiency and high brightness, and has extremely stable performance with little variation from product to product. can be configured. Furthermore, a single mold for a reflective member or the like can be constructed with a simple structure, and its shape can be easily changed, which has the effect of providing an inexpensive LED.
第１図は本発明の具体的な一実施例に係るＬＥＤ及びそ
の光路を示した縦断面図。第２図は第１図のＬＥＤでリ
ードフレームを構成するリード部材を樹脂成形された反
射部材に挿入し、リード部材の先端部に設けられた平坦
部に発光チップを接合した状態を示した部分縦断面図。
第３図（ａ）、第３図の）及び第３図（Ｃ）は同実施例
に係る反射部材の平面図、正面中央縦断面図及び側面中
央縦断面図。
第４図は従来のＬＥＤのリードフレームを示した斜視図
。第５図は第４図のリードフレームに発光チップが接合
された状態を示した部分縦断面図。
第６図は従来の他のＬＥＤを示した縦断面図である。
１０ °リードフレーム １１，１６ °°リード部
材１２．１７”°先端部 １３，１８−平坦部１４．１
９°段部
２Ｏ−ＬＥＤ（発光ダイオード）
２１ 反射部材 ２２−長穴 ２３−反射面２４．２５
当接面 ２８ 発光チップ２９°°゛レンズ部材FIG. 1 is a vertical sectional view showing an LED and its optical path according to a specific embodiment of the present invention. Figure 2 shows a state in which the lead member that constitutes the lead frame of the LED in Figure 1 is inserted into a resin-molded reflective member, and the light emitting chip is bonded to the flat part provided at the tip of the lead member. Longitudinal cross-sectional view. FIG. 3(a), FIG. 3), and FIG. 3(C) are a plan view, a front center longitudinal sectional view, and a side center longitudinal sectional view of the reflecting member according to the same embodiment. FIG. 4 is a perspective view showing a conventional LED lead frame. FIG. 5 is a partial vertical sectional view showing a state in which a light emitting chip is bonded to the lead frame of FIG. 4. FIG. 6 is a longitudinal sectional view showing another conventional LED. 10°Lead Frame 11,16°Lead Member 12.17”°Tip 13,18-Flat Part 14.1
9° stepped portion 2O-LED (light emitting diode) 21 Reflective member 22-Elongated hole 23-Reflective surface 24.25
Contact surface 28 Light emitting chip 29°° Lens member
Claims (1)
錐状の反射面と、該反射面に続く底面から前記反射面の
反対側に開口した長穴とが成形された反射部材と、 前記反射部材の長穴に嵌合した先端部と、該先端部の上
部端面に設けられた平坦部と、前記先端部の根本に設け
られた段部とから成る正負一対の電極を形成するリード
部材と、 前記発光チップを前記平坦部に接合し、少なくとも前記
発光チップ及び前記反射部材の一部を樹脂により封止し
て成るレンズ部材と を備えたことを特徴とする発光ダイオード。[Scope of Claims] A light emitting chip, a substantially conical reflecting surface that reflects light emitted from the light emitting chip forward, and an elongated hole opening from a bottom surface following the reflecting surface to the opposite side of the reflecting surface. a reflective member having a shape formed therein; a distal end portion fitted into an elongated hole of the reflective member; a flat portion provided on an upper end surface of the distal end portion; and a stepped portion provided at the base of the distal end portion. A lead member forming a pair of positive and negative electrodes; and a lens member formed by bonding the light emitting chip to the flat part and sealing at least a part of the light emitting chip and the reflecting member with resin. light emitting diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11419490A JP2922977B2 (en) | 1990-04-27 | 1990-04-27 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11419490A JP2922977B2 (en) | 1990-04-27 | 1990-04-27 | Light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0410670A true JPH0410670A (en) | 1992-01-14 |
| JP2922977B2 JP2922977B2 (en) | 1999-07-26 |
Family
ID=14631557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11419490A Expired - Lifetime JP2922977B2 (en) | 1990-04-27 | 1990-04-27 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2922977B2 (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001086730A2 (en) * | 2000-05-12 | 2001-11-15 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for the production thereof |
| WO2002084750A1 (en) * | 2001-04-12 | 2002-10-24 | Matsushita Electric Works, Ltd. | Light source device using led, and method of producing same |
| US6940102B2 (en) | 2001-02-13 | 2005-09-06 | Agilent Technologies, Inc. | Light-emitting diode and a method for its manufacture |
| JP2005317592A (en) * | 2004-04-27 | 2005-11-10 | Kyocera Corp | Light emitting device, package for accommodating same, and lighting apparatus |
| JP2009021643A (en) * | 1997-01-31 | 2009-01-29 | Panasonic Corp | Light-emitting apparatus and manufacturing method thereof |
| JP2009540559A (en) * | 2006-06-08 | 2009-11-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Submount for electronic components |
| US8227821B2 (en) | 2004-09-22 | 2012-07-24 | Osram Opto Semiconductors Gmbh | Housing for an optoelectronic component, optoelectronic component and method for the production of an optoelectronic component |
| US8802470B2 (en) | 2012-06-12 | 2014-08-12 | Disco, Corporation | Optical device processing method |
| US8802463B2 (en) | 2012-06-12 | 2014-08-12 | Disco Corporation | Optical device processing method |
| DE102014207212A1 (en) | 2013-04-16 | 2014-10-16 | Disco Corporation | Light-emitting device |
| US8945963B2 (en) | 2012-06-12 | 2015-02-03 | Disco Corporation | Optical device processing method |
| US8945960B2 (en) | 2012-06-12 | 2015-02-03 | Disco Corporation | Optical device processing method |
| US9202980B2 (en) | 2013-12-20 | 2015-12-01 | Disco Corporation | Light emitting chip |
-
1990
- 1990-04-27 JP JP11419490A patent/JP2922977B2/en not_active Expired - Lifetime
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009021643A (en) * | 1997-01-31 | 2009-01-29 | Panasonic Corp | Light-emitting apparatus and manufacturing method thereof |
| WO2001086730A3 (en) * | 2000-05-12 | 2002-06-27 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for the production thereof |
| US7455461B2 (en) | 2000-05-12 | 2008-11-25 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for the production thereof |
| WO2001086730A2 (en) * | 2000-05-12 | 2001-11-15 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for the production thereof |
| US6940102B2 (en) | 2001-02-13 | 2005-09-06 | Agilent Technologies, Inc. | Light-emitting diode and a method for its manufacture |
| WO2002084750A1 (en) * | 2001-04-12 | 2002-10-24 | Matsushita Electric Works, Ltd. | Light source device using led, and method of producing same |
| US6874910B2 (en) | 2001-04-12 | 2005-04-05 | Matsushita Electric Works, Ltd. | Light source device using LED, and method of producing same |
| JP2005317592A (en) * | 2004-04-27 | 2005-11-10 | Kyocera Corp | Light emitting device, package for accommodating same, and lighting apparatus |
| JP4511238B2 (en) * | 2004-04-27 | 2010-07-28 | 京セラ株式会社 | Light emitting element storage package, light emitting device, and lighting device |
| US8227821B2 (en) | 2004-09-22 | 2012-07-24 | Osram Opto Semiconductors Gmbh | Housing for an optoelectronic component, optoelectronic component and method for the production of an optoelectronic component |
| JP2009540559A (en) * | 2006-06-08 | 2009-11-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Submount for electronic components |
| US8802470B2 (en) | 2012-06-12 | 2014-08-12 | Disco, Corporation | Optical device processing method |
| US8802463B2 (en) | 2012-06-12 | 2014-08-12 | Disco Corporation | Optical device processing method |
| US8945963B2 (en) | 2012-06-12 | 2015-02-03 | Disco Corporation | Optical device processing method |
| US8945960B2 (en) | 2012-06-12 | 2015-02-03 | Disco Corporation | Optical device processing method |
| DE102014207212A1 (en) | 2013-04-16 | 2014-10-16 | Disco Corporation | Light-emitting device |
| US9202980B2 (en) | 2013-12-20 | 2015-12-01 | Disco Corporation | Light emitting chip |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2922977B2 (en) | 1999-07-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10454003B2 (en) | Light emitting device and manufacturing method thereof | |
| JP3992770B2 (en) | Light emitting device and method for forming the same | |
| KR100961493B1 (en) | Leadframe having a heat sink supporting part, fabricating method of the light emitting diode package using the same and light emitting diode package fabricated by the method | |
| JPH0410670A (en) | Light-emitting diode | |
| US7875476B2 (en) | High power LED package and fabrication method thereof | |
| JP2002280616A (en) | Package mold and light emitting device using the same | |
| US4933729A (en) | Photointerrupter | |
| JPH10261821A (en) | Semiconductor light emitting device and its manufacture | |
| US9306136B2 (en) | Bat-wing lens design with multi-die | |
| US20090251902A1 (en) | Light emitting diode | |
| KR101374898B1 (en) | Led package with its interfacial delamination reduced | |
| JPH11251644A (en) | Semiconductor light emitting device | |
| JPH0918058A (en) | Semiconductor light-emitting device | |
| US20190096938A1 (en) | High reliability housing for a semiconductor package | |
| JP6574768B2 (en) | LED dome with internal high index pillar | |
| JP2519504Y2 (en) | Light emitting diode | |
| KR20070036900A (en) | Light emitting device with a lens of silicone and method of fabricating the same | |
| JPH0550754U (en) | Light emitting device | |
| CN109509827A (en) | A kind of deep ultraviolet semiconductor light emitting diode device and preparation method thereof | |
| CN106067506B (en) | The manufacturing method of light emitting device package, back light unit and light-emitting device | |
| JPH0645656A (en) | Light emitting device and optical fiber type photoelectric sensor with it | |
| JP4677653B2 (en) | Optical semiconductor device | |
| JPS62224986A (en) | Led lamp and manufacture thereof | |
| JPH05235484A (en) | Semiconductor light source | |
| JP2565160B2 (en) | Light emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080430 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090430 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100430 Year of fee payment: 11 |
|
| EXPY | Cancellation because of completion of term |