JP2922977B2 - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JP2922977B2 JP2922977B2 JP11419490A JP11419490A JP2922977B2 JP 2922977 B2 JP2922977 B2 JP 2922977B2 JP 11419490 A JP11419490 A JP 11419490A JP 11419490 A JP11419490 A JP 11419490A JP 2922977 B2 JP2922977 B2 JP 2922977B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting chip
- reflecting
- lead
- reflection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Led Devices (AREA)
- Led Device Packages (AREA)
Description
本発明は、発光チップがリードフレームに接合され樹
脂封止された発光ダイオードに関する。The present invention relates to a light emitting diode in which a light emitting chip is joined to a lead frame and sealed with a resin.
従来、発光ダイオード（以下「LED」という）用リー
ドフレームは、正負一対の電極部が両側面に分かれた発
光チップに適するものとして、第４図及び第５図に示し
たようなものが知られている。 ここで、第４図はリードフレームの斜視図であり、第
５図は第４図のリードフレームに発光チップが接合され
た状態を示した部分縦断面図である。 このリードフレーム30は間隔を隔てて並列に配設さ
れ、正負一対の電極を形成するリード部材31,36により
構成されている。一方のリード部材31にはその先端部32
に発光チップ38を載置する平坦部33と載置される発光チ
ップ38の側周面をその近傍で囲むように、すり鉢状の反
射部34が一体的に形成されている。 発光チップ38の一方の面側にある電極部は一方のリー
ド部材31の平坦部33に載置され、導電性ペーストによっ
て接合されている。そして、発光チップ38の他方の両側
にある電極部と他方のリード部材36の先端部37とは金線
39等によりワイヤボンディングされ接続されている。 ところで、近年、同一面側に正負一対の電極部をもつ
所謂フリップチップ方式のGaN（窒化ガリウム）を用い
て発光チップとした青色発光LEDが開発された。 上記発光チップを用いたLEDのリードフレームとして
は、第６図に示したように、先端が平坦な正負一対の電
極を形成するリード部材41,46により構成されたリード
フレーム40が使用されている。このリードフレーム40に
は両リード部材41,46の平坦な先端面がほぼ同じ位置に
なるように並列に配設されている。そして、それら両リ
ード部材41,46の先端面上に発光チップ48の両電極部が
載置され、それぞれ導電性ペーストにより接合されてい
る。 この後、エポキシ樹脂等の透明樹脂でレンズ部材49を
成形してLED50を形成している。Conventionally, as shown in FIGS. 4 and 5, a lead frame for a light emitting diode (hereinafter referred to as "LED") has been known as being suitable for a light emitting chip in which a pair of positive and negative electrode portions are divided on both side surfaces. ing. Here, FIG. 4 is a perspective view of the lead frame, and FIG. 5 is a partial longitudinal sectional view showing a state where the light emitting chip is joined to the lead frame of FIG. The lead frame 30 is arranged in parallel at an interval, and is constituted by lead members 31 and 36 forming a pair of positive and negative electrodes. One lead member 31 has a tip 32
A mortar-shaped reflecting portion 34 is integrally formed so as to surround the flat portion 33 on which the light-emitting chip 38 is mounted and the side peripheral surface of the light-emitting chip 38 to be mounted near the flat portion 33. The electrode portion on one surface side of the light emitting chip 38 is mounted on the flat portion 33 of one lead member 31, and is joined by a conductive paste. The electrodes on the other side of the light emitting chip 38 and the tip 37 of the other lead member 36 are made of gold wire.
They are connected by wire bonding with 39 or the like. In recent years, a blue light-emitting LED has been developed as a light-emitting chip using so-called flip-chip GaN (gallium nitride) having a pair of positive and negative electrode portions on the same surface side. As shown in FIG. 6, a lead frame 40 composed of lead members 41 and 46 forming a pair of positive and negative electrodes having a flat tip is used as a lead frame of an LED using the light emitting chip. . The lead frames 40 are arranged in parallel so that the flat tip surfaces of both the lead members 41 and 46 are at substantially the same position. The two electrode portions of the light emitting chip 48 are mounted on the end surfaces of both the lead members 41 and 46, and are respectively joined by a conductive paste. Thereafter, the lens member 49 is molded with a transparent resin such as an epoxy resin to form the LED 50.
上述のGaNを用いた発光チップ48は、絶縁物であるサ
ファイヤ基板上にｎ−GaN及びｉ−GaNを積層し、ｉ−Ga
Nの一部に設けられた孔内に電極金属を蒸着し、その上
にはんだをバンプさせてｎ−GaNまで電極を通じさせる
ことにより、ｉ−GaN側の表面に形成した電極部ｉ−GaN
とｎ−GaNまで通じた電極部による両電極部が形成さ
れ、この発光チップ48がサファイヤ基板側を上にして、
ｉ−GaN層上の両電極部がリード部材41,46にそれぞれ接
合されている。 そして、通電されてこの発光チップ48が発光し、その
青色光は、発光チップ48を構成しているサファイヤ基板
及びレンズ部材49中を通過して空気中へ放射される。 ところが、一部の光は発光チップ48のサファイヤ基板
とレンズ部材49との界面で入射角が42°を越えると全反
射し、この発光チップ48の側面方向へ逃げるため、光が
周囲に分散され、上記青色光の取り出し効率が非常に悪
く、高輝度化を図ることが難しいという問題があった。 ここで、特開昭63−15483号公報「発光ダイオード用
リードフレーム」にて開示されたように、上述の問題点
の解決を目指したリードフレームが提案されている。 このリードフレームにおいては、同一面側に正負一対
の電極部をもつ発光チップに適し、その先端部に設けら
れた反射部により光の取り出し効率を改善している。 一般に、このリードフレームの反射部は金属製のリー
ドフレームをプレス成形する工程のうち絞り加工工程で
形成される。 しかしながら、絞り加工上の制約からあまり深い形状
や複雑な形状の反射部を形成することができなかった。
又、絞り加工にて形成された反射部の表面平滑性を良く
することには限界があり、反射率が必ずしも高くなかっ
た。 本発明は、上記の課題を解決するために成されたもの
であり、その目的とするところは、絞り加工を省いた簡
単な形状のリードフレームと別に樹脂成形した反射部材
を用いて光の取り出し効率が良いLEDを提供することで
ある。The light-emitting chip 48 using GaN described above has a structure in which n-GaN and i-GaN are stacked on a sapphire substrate which is an insulator, and i-Ga
An electrode metal formed on the surface on the i-GaN side by depositing an electrode metal in a hole provided in a part of N, bumping a solder thereon and passing the electrode to n-GaN
And both electrode portions formed by electrode portions leading to n-GaN, and this light emitting chip 48 is turned up on the sapphire substrate side,
Both electrode portions on the i-GaN layer are joined to lead members 41 and 46, respectively. The light-emitting chip 48 emits light when energized, and the blue light passes through the sapphire substrate and the lens member 49 constituting the light-emitting chip 48 and is emitted into the air. However, part of the light is totally reflected when the incident angle exceeds 42 ° at the interface between the sapphire substrate of the light emitting chip 48 and the lens member 49, and escapes in the side direction of the light emitting chip 48, so that the light is dispersed around. However, there has been a problem that the efficiency of extracting the blue light is very poor, and it is difficult to achieve high luminance. Here, as disclosed in JP-A-63-15483, "Lead frame for light emitting diode", a lead frame aiming at solving the above-mentioned problems has been proposed. This lead frame is suitable for a light emitting chip having a pair of positive and negative electrode portions on the same surface side, and the light extraction efficiency is improved by a reflecting portion provided at the tip end thereof. Generally, the reflecting portion of the lead frame is formed by a drawing process in a process of press-forming a metal lead frame. However, it was not possible to form a reflection part having a too deep or complicated shape due to restrictions on drawing.
In addition, there is a limit in improving the surface smoothness of the reflecting portion formed by drawing, and the reflectivity is not always high. SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problem, and an object thereof is to extract light using a lead frame having a simple shape in which drawing is omitted and a reflecting member molded separately from a resin. It is to provide an efficient LED.
上記課題を解決するための発明の構成は、サファイア
基板を光放出面とし電極部がリード部材とバンプにより
直接接合される発光チップと、前記発光チップから放射
される光を前方に反射する略円錐状の反射面と、該反射
面に続く底面から前記反射面の反対側に開口した柱状の
長穴と、その長穴の反射面と反対側の端面周辺部の当接
面とが成形された樹脂製の反射部材と、前記反射部材の
柱状の長穴の側壁に対して嵌合した先端部と、該先端部
の上部端面に設けられた平坦部と、前記先端部の根本に
設けられた段部とから成る正負一対の電極を形成するリ
ード部材と、前記発光チップを前記平坦部に接合し、少
なくとも前記発光チップ及び前記反射部材を樹脂により
封止して成るレンズ部材とを備え、前記リード部材の前
記段部が前記反射部材の前記当接面と当接する時、前記
リード部材の前記平坦面が前記反射面の前記底面と略同
一高さとなるようにしたことを特徴とする。The configuration of the invention for solving the above problems includes a light emitting chip having a sapphire substrate as a light emitting surface and an electrode portion directly joined to a lead member and a bump, and a substantially cone for reflecting light emitted from the light emitting chip forward. Shaped reflective surface, a columnar elongated hole opened from the bottom surface following the reflective surface to the opposite side of the reflective surface, and a contact surface around the end face of the elongated hole opposite to the reflective surface. A reflecting member made of resin, a front end fitted to the side wall of the columnar long hole of the reflecting member, a flat portion provided on the upper end surface of the front end, and a base provided at the root of the front end A lead member for forming a pair of positive and negative electrodes comprising a step portion, and a lens member formed by joining the light emitting chip to the flat portion and sealing at least the light emitting chip and the reflecting member with a resin; The step portion of the lead member is the reflection portion When the contact surface and abutment, and said flat surface of said lead member is set to be the bottom surface and substantially the same height as the reflective surface.
反射部材には発光チップから放射される光を前方に反
射する略円錐状の反射面と、その反射面に続く底面から
反対側に開口した柱状の長穴と、その長穴の反射面と反
対側の端面周辺部の当接面とが成形されている。 又、正負一対のリード部材には上記反射部材の柱状の
長穴の側壁に対して嵌合する先端部と、その先端部の上
部端面に設けられた平坦部と、その先端部の根本に設け
られた段部とが形成される。 そして、上記発光チップを上記平坦部に接合し、レン
ズ部材は少なくとも上記発光チップ及び上記反射部材を
その樹脂により封止する。 このため、リードフレームを構成する正負一対の電極
を形成するリード部材自身の形状は簡単で、これらリー
ド部材の先端部は反射部材の柱状の長穴の側壁に対して
嵌合し、その段部が反射部材の当接面に当接するまで反
射部材に挿入されて位置決めされるので、挿入後におけ
るリード部材が傾むくことがなく、反射部材との相対位
置が正確となる。又、この位置決め状態で、リード部材
の平坦部と反射部材の底面とが、ほぼ、同一高さとなる
ため、光を有効に前方に取り出すことができる。 又、反射部材はリード部材とは別に成形されるので、
その反射面は平滑にでき、その設計形状の自由度が大き
いのでリード部材に接合された発光チップから放射され
る光の取り出し効率が良いLEDとなる。The reflecting member has a substantially conical reflecting surface for reflecting light emitted from the light emitting chip forward, a column-shaped long hole opened from the bottom surface following the reflecting surface to the opposite side, and a reflecting surface opposite to the reflecting surface of the long hole. And a contact surface around the end face on the side. Further, the pair of positive and negative lead members has a tip portion fitted to the side wall of the columnar elongated hole of the reflection member, a flat portion provided on the upper end surface of the tip portion, and a root portion provided at the root of the tip portion. The step is formed. Then, the light emitting chip is bonded to the flat portion, and the lens member seals at least the light emitting chip and the reflecting member with the resin. For this reason, the shape of the lead member itself forming the pair of positive and negative electrodes constituting the lead frame is simple, and the tips of these lead members are fitted to the side walls of the columnar long hole of the reflection member, and the stepped portion is formed. Is inserted into the reflecting member and positioned until it contacts the contact surface of the reflecting member, so that the lead member does not tilt after insertion and the relative position with respect to the reflecting member becomes accurate. Further, in this positioning state, the flat portion of the lead member and the bottom surface of the reflection member are substantially at the same height, so that light can be effectively extracted forward. Also, since the reflection member is molded separately from the lead member,
The reflection surface can be smoothed, and the degree of freedom in the design shape is large, so that an LED with good light extraction efficiency emitted from the light emitting chip bonded to the lead member can be obtained.
以下、本発明を具体的な実施例に基づいて説明する。 第２図は本発明の具体的な一実施例に係るLEDのリー
ドフレームを構成するリード部材を樹脂成形された反射
部材に挿入し、リード部材先端に発光チップを接合した
状態を示した縦断面図である。 リードフレーム10は間隔を隔てて並列に配設された正
負一対の電極を形成するリード部材11,16により構成さ
れている。そして、両リード部材11,16にはそれらの先
端部12,17の上部端面には発光チップ28を載置する平坦
部13,18が形成されている。又、先端部12,17の根本には
段部14,19が形成されている。 21は反射部材であり、その反射部材21は第３図
（ａ），第３図（ｂ）及び第３図（ｃ）にその平面図、
正面中央縦断面図及び側面中央縦断面図をそれぞれ示し
たように樹脂の射出成形により形成されている。 上記反射部材21はリード部材11,16の先端部12,17の幅
及び厚みに嵌合する長穴22を有し、その長穴22の一方の
端部には、その周囲から外側に傾斜した反射面23が形成
されている。又、長穴22の他方の端部には、リード部材
11,16の段部14,19に対する当接面24,25が形成されてい
る。 このように成形された反射部材21の長穴22にリード部
材11,16の先端部12,17が挿入され、リード部材11,16の
段部14,19が反射部材21の当接面24,25に当接して各々の
相対位置が決定される。 GaN青色発光チップである発光チップ28はサファイヤ
基板281上にｎ−GaN層282、更に、Znをドープして補償
した高抵抗ｉ−GaN層283を成長させて作られている。 そして、ｉ−GaN層283の一端側にはその一部にｉ−Ga
N層283を貫通して設けられた孔内に電極部がｉ−GaN層2
83の表面とほぼ同一となるように設けられており、他端
側にはｉ−GaN層283上に電極部が形成されている。 この発光チップ28はｎ−GaN層282の電極部が負極とな
るリード部材11の平坦部13上に、ｉ−GaN層283の電極部
が正極となるリード部材16の平坦部18上に載置されそれ
ぞれはんだバンプにより接合されている。 上述のようにして、反射部材21が成形され、その反射
部材21の長穴22にリード部材11,16の先端部12,17が挿入
され、発光チップ28がリード部材11,16の平坦部13,18に
接合された後、その反射部材21の全周を囲むように、更
にエポキシ樹脂等の透明樹脂でレンズ部材29を成形し
て、第１図に示したようなLED20を形成する。 そして、LED20のリード部材11,16に電圧を印加し電流
を流した。すると、その発光チップ28からの青色光はそ
の代表的な光路を矢印で示したように、発光チップ28の
表面から出た光に加えて、その発光チップ28の端面から
出た光も反射部材21に設けられた反射面23により反射さ
れてLED20から前方へ照射される。 ここで、樹脂成形された反射部材21においては、リー
ド部材11,16と正確に位置決めされているので、発光チ
ップ28から出た光のうち反射部材21の反射面23にて反射
された光おいても設計された光路を通ることになる。 又、反射部材21の反射面23を平滑で鏡面に近づけるこ
とができると共に複雑な形状も成形可能であるので、反
射効率を向上させることが可能となる。 更に、反射部材21を成形するための樹脂材料を白色等
に着色することにより反射面23の反射率を上昇すること
も容易である。 尚、レンズ部材29の樹脂材料であるエポキシ樹脂の硬
化温度が高温のものを使用する場合には、反射部材21を
成形するための樹脂材料としては耐熱性に優れた熱可塑
性エンジニアリングプラスチックである例えば、ポリイ
ミド、ポリカーボネイト、ポリフェニレンサルファイ
ド、ポリエチレンテレフタレート、ポリブチレンテレフ
タレート樹脂等を用いる。 更に、上述の発光チップとしては同一面側に正負一対
の電極部をもつGaN等に限らず両側面に正負一対の電極
をもつものであっても当然適用することができる。 本発明のLEDにおいては、リードフレームを構成する
簡単な形状の正負一対の電極を形成するリード部材を反
射部材の長穴に嵌合させ、上記リード部材の段部を反射
部材の当接面に当接する位置まで挿入することにより各
々位置決めが完了する。 従って、金属製のリードフレームを構成するリード部
材にプラスチックの反射部材を一体的に成形（インサー
ト成形）等する場合のように、リードフレームを固定す
る複雑な形状の金型を必要としないので、コストダウン
を図ることが可能となる。 又、反射部材のみを樹脂成形する金型は簡単な構造に
て構成できるので、形状変更が容易であると共に反射面
の精度が向上され、更に、バリ等の発生も抑えることが
できる。Hereinafter, the present invention will be described based on specific examples. FIG. 2 is a longitudinal sectional view showing a state in which a lead member constituting an LED lead frame according to a specific embodiment of the present invention is inserted into a resin-molded reflecting member, and a light emitting chip is joined to the tip of the lead member. FIG. The lead frame 10 is composed of lead members 11 and 16 that form a pair of positive and negative electrodes arranged in parallel at an interval. Flat portions 13, 18 on which the light emitting chips 28 are mounted are formed on the upper end surfaces of the tips 12, 17 of the lead members 11, 16. In addition, steps 14 and 19 are formed at the roots of the tips 12 and 17. 21 is a reflection member, and the reflection member 21 is a plan view of FIG. 3 (a), FIG. 3 (b) and FIG. 3 (c).
It is formed by injection molding of a resin as shown in the front central longitudinal sectional view and the side central longitudinal sectional view, respectively. The reflection member 21 has an elongated hole 22 that fits into the width and thickness of the distal end portions 12, 17 of the lead members 11, 16, and one end of the elongated hole 22 is inclined outward from its periphery. A reflection surface 23 is formed. A lead member is provided at the other end of the elongated hole 22.
The contact surfaces 24, 25 for the step portions 14, 19 of the 11, 16 are formed. The distal ends 12, 17 of the lead members 11, 16 are inserted into the elongated holes 22 of the reflection member 21 thus formed, and the step portions 14, 19 of the lead members 11, 16 are brought into contact with the contact surfaces 24, 24 of the reflection member 21. The relative position of each is determined by contacting 25. The light emitting chip 28 which is a GaN blue light emitting chip is formed by growing an n-GaN layer 282 and a high resistance i-GaN layer 283 compensated by doping Zn on a sapphire substrate 281. The i-GaN layer 283 has an i-Ga layer on one end thereof.
The electrode portion is formed in the hole provided through the N layer 283 by the i-GaN layer 2.
It is provided so as to be substantially the same as the surface of the electrode 83, and an electrode portion is formed on the i-GaN layer 283 at the other end. The light emitting chip 28 is mounted on the flat portion 13 of the lead member 11 in which the electrode portion of the n-GaN layer 282 is a negative electrode and on the flat portion 18 of the lead member 16 in which the electrode portion of the i-GaN layer 283 is a positive electrode. And joined by solder bumps. As described above, the reflecting member 21 is formed, the tips 12 and 17 of the lead members 11 and 16 are inserted into the elongated holes 22 of the reflecting member 21, and the light emitting chip 28 is attached to the flat portions 13 of the lead members 11 and 16. , 18, the lens member 29 is further molded with a transparent resin such as an epoxy resin so as to surround the entire periphery of the reflection member 21, thereby forming the LED 20 as shown in FIG. Then, a voltage was applied to the lead members 11 and 16 of the LED 20 to flow a current. As a result, the blue light from the light emitting chip 28 reflects not only the light emitted from the surface of the light emitting chip 28 but also the light emitted from the end face of the light emitting chip 28 as a reflecting member, as shown by the arrow in the representative optical path. The light is reflected by the reflecting surface 23 provided on the LED 21 and emitted forward from the LED 20. Here, in the reflecting member 21 formed of resin, since it is accurately positioned with respect to the lead members 11 and 16, the light reflected by the reflecting surface 23 of the reflecting member 21 out of the light emitted from the light emitting chip 28 is used. Even if it is, it will pass through the designed optical path. Further, since the reflecting surface 23 of the reflecting member 21 can be made smooth and close to a mirror surface and a complicated shape can be formed, the reflection efficiency can be improved. Further, it is easy to increase the reflectance of the reflection surface 23 by coloring the resin material for forming the reflection member 21 with white or the like. When an epoxy resin that is a resin material of the lens member 29 has a high curing temperature, a resin material for forming the reflective member 21 is a thermoplastic engineering plastic having excellent heat resistance, for example, , Polyimide, polycarbonate, polyphenylene sulfide, polyethylene terephthalate, polybutylene terephthalate resin, and the like. Further, the light emitting chip described above is not limited to GaN or the like having a pair of positive and negative electrode portions on the same surface side, and may naturally be a device having a pair of positive and negative electrodes on both side surfaces. In the LED of the present invention, a lead member forming a pair of electrodes having a simple shape, a positive electrode and a negative electrode, constituting a lead frame is fitted into a long hole of the reflection member, and the step of the lead member is formed on the contact surface of the reflection member. Positioning is completed by inserting to the contact position. Therefore, unlike a case where a plastic reflection member is integrally molded (insert molding) with a lead member constituting a metal lead frame, a complicated-shaped mold for fixing the lead frame is not required. Costs can be reduced. Further, since a mold for resin-molding only the reflection member can be configured with a simple structure, the shape can be easily changed, the accuracy of the reflection surface is improved, and the occurrence of burrs and the like can be suppressed.
本発明は、反射面と柱状の長穴とその長穴の反射面と
反対側の端面周辺部の当接面とが成形された樹脂製の反
射部材と、その反射部材の柱状の長穴の側壁に対して嵌
合する先端部と、その先端部の上部端面に設けられた平
坦部と、その先端部の根本に設けられた段部とから成
り、正負一対の電極を形成するリード部材と、発光チッ
プを平坦部に接合し、発光チップ及び反射部材を樹脂に
より封止して成るレンズ部材とを備えている。 そして、別々にリード部材と反射部材とを構成し、リ
ード部材を反射部材に形成された柱状の長穴に挿入すれ
ば、リード部材が長穴の側壁に対して嵌合するので、リ
ード部材の傾きが防止されので光軸方向を反射部材の底
面に垂直とすることができる。又、リード部材の段部が
反射部材の当接面と当接する時、リード部材の平坦面が
反射面の底面と略同一高さとなるように設定されるの
で、発光した光を反射部材で有効に前面に放射させるこ
とができる。 この設定の後、リード部材の平坦部に発光チップを接
合した後、レンズ部材の樹脂により発光チップ及び反射
部材が封止される。 従って、リード部材に接合される発光チップと反射部
材の反射面との相対位置関係が正確となり、光の取り出
し効率が良く高輝度化が図れると共に製品毎のバラツキ
が少なく極めて安定した性能を有するLEDが構成でき
る。 又、反射部材等の単体の金型は簡単な構造にて構成で
き、形状変更も容易であり、安価なLEDを提供できると
いう効果がある。The present invention provides a resin-made reflecting member in which a reflecting surface, a column-shaped elongated hole, and an abutting surface around an end surface opposite to the reflecting surface of the elongated hole are formed, and a column-shaped elongated hole of the reflecting member. A lead member which is formed of a tip portion fitted to the side wall, a flat portion provided on the upper end surface of the tip portion, and a step provided at the root of the tip portion, and forming a pair of positive and negative electrodes; And a lens member formed by bonding the light emitting chip to the flat portion and sealing the light emitting chip and the reflecting member with a resin. When the lead member and the reflection member are separately formed, and the lead member is inserted into the columnar long hole formed in the reflection member, the lead member fits into the side wall of the long hole. Since the inclination is prevented, the optical axis direction can be perpendicular to the bottom surface of the reflection member. Further, when the step of the lead member comes into contact with the contact surface of the reflection member, the flat surface of the lead member is set to be substantially the same height as the bottom surface of the reflection surface. Can be radiated to the front. After this setting, the light emitting chip is bonded to the flat portion of the lead member, and then the light emitting chip and the reflecting member are sealed with the resin of the lens member. Therefore, the relative positional relationship between the light emitting chip bonded to the lead member and the reflection surface of the reflection member is accurate, and the LED has high light extraction efficiency, high brightness, and little variation among products, and extremely stable performance. Can be configured. In addition, a single mold such as a reflecting member can be configured with a simple structure, the shape can be easily changed, and an inexpensive LED can be provided.
第１図は本発明の具体的な一実施例に係るLED及びその
光路を示した縦断面図。第２図は第１図のLEDでリード
フレームを構成するリード部材を樹脂成形された反射部
材に挿入し、リード部材の先端部に設けられた平坦部に
発光チップを接合した状態を示した部分縦断面図。第３
図（ａ），第３図（ｂ）及び第３図（ｃ）は同実施例に
係る反射部材の平面図、正面中央縦断面図及び側面中央
縦断面図。第４図は従来のLEDのリードフレームを示し
た斜視図。第５図は第４図のリードフレームに発光チッ
プが接合された状態を示した部分縦断面図。第６図は従
来の他のLEDを示した縦断面図である。 10……リードフレーム、11,16……リード部材、12,17…
…先端部、13,18……平坦部、14,19……段部、20……LE
D（発光ダイオード）、21……反射部材、22……長穴、2
3……反射面、24,25……当接面、28……発光チップ、29
……レンズ部材FIG. 1 is a longitudinal sectional view showing an LED and an optical path thereof according to a specific embodiment of the present invention. FIG. 2 is a view showing a state in which a lead member constituting a lead frame of the LED of FIG. 1 is inserted into a resin-molded reflecting member, and a light emitting chip is bonded to a flat portion provided at the tip of the lead member. Longitudinal section. Third
3 (a), 3 (b) and 3 (c) are a plan view, a front central longitudinal sectional view and a side central longitudinal sectional view of the reflecting member according to the embodiment. FIG. 4 is a perspective view showing a conventional LED lead frame. FIG. 5 is a partial longitudinal sectional view showing a state where the light emitting chip is joined to the lead frame of FIG. FIG. 6 is a longitudinal sectional view showing another conventional LED. 10 …… Lead frame, 11,16 …… Lead member, 12,17…
… Tip, 13,18 …… Flat part, 14,19 …… Step, 20… LE
D (Light Emitting Diode), 21 Reflecting member, 22 Slot, 2
3… Reflecting surface, 24,25… Contact surface, 28… Light emitting chip, 29
…… Lens member
───────────────────────────────────────────────────── フロントページの続き (72)発明者 加藤 久喜 愛知県西春日井郡春日町大字落合字長畑 １番地 豊田合成株式会社内 (56)参考文献 特開 昭57−73985（ＪＰ，Ａ) 特開 昭63−15483（ＪＰ，Ａ) 実開 昭58−7364（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 33/00 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Kuki Kato, Inventor 1 Nagasaki Ochiai, Kasuga-cho, Nishikasugai-gun, Aichi Prefecture Inside Toyoda Gosei Co., Ltd. (56) References JP-A-57-73985 (JP, A) 63-15483 (JP, A) Japanese Utility Model Showa 58-764 (JP, U) (58) Field surveyed (Int. Cl. 6 , DB name) H01L 33/00
Claims (1)
ード部材とバンプにより直接接合される発光チップと、 前記発光チップから放射される光を前方に反射する略円
錐状の反射面と、該反射面に続く底面から前記反射面の
反対側に開口した柱状の長穴と、その長穴の反射面と反
対側の端面周辺部の当接面とが成形された樹脂製の反射
部材と、 前記反射部材の中状の長穴の側壁に対して嵌合した先端
部と、該先端部の上部端面に設けられた平坦部と、前記
先端部の根本に設けられた段部とから成る正負一対の電
極を形成するリード部材と、 前記発光チップを前記平坦部に接合し、少なくとも前記
発光チップ及び前記反射部材を樹脂により封止して成る
レンズ部材と を備え、 前記リード部材の前記段部が前記反射部材の前記当接面
と当接する時、前記リード部材の前記平坦面が前記反射
面の前記底面と略同一高さとなるようにした ことを特徴とする発光ダイオード。A light emitting chip having a sapphire substrate as a light emitting surface and an electrode portion directly joined to a lead member by a bump; a substantially conical reflecting surface for reflecting light emitted from the light emitting chip forward; A columnar long hole opened from the bottom surface following the reflection surface to the opposite side of the reflection surface, and a resin reflection member formed with a contact surface around the end surface on the opposite side to the reflection surface of the long hole, A positive end, a negative end, and a flat portion provided on the upper end surface of the front end portion fitted to the side wall of the elongated hole of the reflecting member, and a step provided at the root of the front end portion. A lead member for forming a pair of electrodes; and a lens member formed by joining the light emitting chip to the flat portion and sealing at least the light emitting chip and the reflecting member with resin. Abuts against the contact surface of the reflection member When a light emitting diode, characterized in that the flat surface of the lead member is set to be substantially the same height as said bottom surface of said reflecting surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11419490A JP2922977B2 (en) | 1990-04-27 | 1990-04-27 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11419490A JP2922977B2 (en) | 1990-04-27 | 1990-04-27 | Light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0410670A JPH0410670A (en) | 1992-01-14 |
| JP2922977B2 true JP2922977B2 (en) | 1999-07-26 |
Family
ID=14631557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11419490A Expired - Lifetime JP2922977B2 (en) | 1990-04-27 | 1990-04-27 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2922977B2 (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6333522B1 (en) * | 1997-01-31 | 2001-12-25 | Matsushita Electric Industrial Co., Ltd. | Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor |
| DE10023353A1 (en) * | 2000-05-12 | 2001-11-29 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for producing it |
| JP2002246650A (en) | 2001-02-13 | 2002-08-30 | Agilent Technologies Japan Ltd | Light-emitting diode and its manufacturing method |
| EP1387412B1 (en) | 2001-04-12 | 2009-03-11 | Matsushita Electric Works, Ltd. | Light source device using led, and method of producing same |
| JP4511238B2 (en) * | 2004-04-27 | 2010-07-28 | 京セラ株式会社 | Light emitting element storage package, light emitting device, and lighting device |
| DE102004045950A1 (en) | 2004-09-22 | 2006-03-30 | Osram Opto Semiconductors Gmbh | Housing for an optoelectronic component, optoelectronic component and method for producing an optoelectronic component |
| WO2008007237A2 (en) * | 2006-06-08 | 2008-01-17 | Koninklijke Philips Electronics N.V. | Submount for electronic components |
| JP6025410B2 (en) | 2012-06-12 | 2016-11-16 | 株式会社ディスコ | Optical device processing method |
| JP2013258231A (en) | 2012-06-12 | 2013-12-26 | Disco Abrasive Syst Ltd | Method for processing optical device |
| JP6029338B2 (en) | 2012-06-12 | 2016-11-24 | 株式会社ディスコ | Optical device processing method |
| JP2013258234A (en) | 2012-06-12 | 2013-12-26 | Disco Abrasive Syst Ltd | Method for processing optical device |
| JP2014225636A (en) | 2013-04-16 | 2014-12-04 | 株式会社ディスコ | Light-emitting device |
| JP6255235B2 (en) | 2013-12-20 | 2017-12-27 | 株式会社ディスコ | Light emitting chip |
-
1990
- 1990-04-27 JP JP11419490A patent/JP2922977B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0410670A (en) | 1992-01-14 |
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