JPH04102378A - Manufacture of light emitting diode device - Google Patents
Manufacture of light emitting diode deviceInfo
- Publication number
- JPH04102378A JPH04102378A JP2220364A JP22036490A JPH04102378A JP H04102378 A JPH04102378 A JP H04102378A JP 2220364 A JP2220364 A JP 2220364A JP 22036490 A JP22036490 A JP 22036490A JP H04102378 A JPH04102378 A JP H04102378A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- substrate
- emitting diode
- dicing
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims description 30
- 229920005989 resin Polymers 0.000 claims description 14
- 239000011347 resin Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 3
- 239000003550 marker Substances 0.000 abstract description 5
- 229920006015 heat resistant resin Polymers 0.000 abstract description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 241000219310 Beta vulgaris subsp. vulgaris Species 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 235000021536 Sugar beet Nutrition 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Dicing (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明はリード線のない略箱型をした発光ダイオード装
置に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a substantially box-shaped light emitting diode device without lead wires.
（ロ）従来の技術
近年リード線のないコンパクトな略箱型形状をした発光
ダイオード装置が提案されるようになった。これは例え
ば特公昭６０−４３０４０号公報の如く、第６図（基板
の平面図）と第７図（装置の断面図）に示されていた。(b) Prior Art In recent years, compact light emitting diode devices without lead wires and having a substantially box-like shape have been proposed. This is shown in FIG. 6 (a plan view of the substrate) and FIG. 7 (a sectional view of the device), for example, as in Japanese Patent Publication No. 60-43040.
これらの図に於て、甜脂から成る基板３１に複数の凹部
３２と四角状のスルーホール３３を樅と横に整列して形
成した。そしてメツキを施こした結果、凹部３２の底面
にそれぞれの端部３４と３５が位置し、基板３１の頂面
３６と側面３７を通り裏面３８までのびかつ延長方向が
反対となる第１の金属層３９と第２の金属層４０を形成
した。端部３４の上に固着された発光ダイオード４１と
端部３５を金属細線４２で接続し、凹部３２のみに透光
性樹脂４３を覆っていた。その後、横方向にＥ １Ｅ
＋ Ｅ ｓ・・・と縦方向にＦ、Ｆ、Ｆ、Ｆ、・・・と
ダイシングすると複数の発光ダイオード装置４４が完成
した。In these figures, a plurality of recesses 32 and square through holes 33 are formed in a substrate 31 made of sugar beet, aligned horizontally with the fir tree. As a result of plating, the ends 34 and 35 are located on the bottom surface of the recess 32, and the first metal extends through the top surface 36 and side surface 37 of the substrate 31 to the back surface 38, and has an opposite extension direction. Layer 39 and second metal layer 40 were formed. A light emitting diode 41 fixed on the end 34 and the end 35 were connected by a thin metal wire 42, and only the recess 32 was covered with a translucent resin 43. Then laterally E 1E
+ E s... and dicing in the vertical direction F, F, F, F,..., a plurality of light emitting diode devices 44 were completed.
（ハ）発明が解決しようとする課題
しかして上述の装置では、基板３１からの取り数を多く
するために四角状のスルーホール３３の縦の長さｅは出
来るだけ小さく、例えば０．８ｒｇｍに、そして同様に
凹部３２同志の間隔ｆも０．８ｍｍに作製された。通常
用いるダイシング刃の幅は０．３ｍｍであるから、ダイ
シング刃の外側とスルーホール３３の内側との間隔ｇの
基準値は（０，８−０，３）／ ２ ＝０．２５ｍｍと
なる。そして成型品である基板３１の寸法精度は通常±
０．１ｍｍであり、Ｅ ｒ Ｅ ！ Ｅ ｓ・・・のダ
イシング寸法精度は±０．１５ｍｍ以上であるので、装
置の側面４５に於てダイシング刃が第１の金属層３９又
は第２の金属層４０を傷つけて導通不良となり易い。何
故ならば通常ダイシング装置は４０ｍｍの距離を視野に
持つ顕微鏡を備えて、基板３１上のマーカーに位置合せ
しながらダイシングする。しかし従来の装置の様に、四
角状のスルーホール３３は正確なマーカーを求めにくい
のでダイシング寸法精度は±０．１５ｍｍ以上と粗くな
った。(c) Problems to be Solved by the Invention However, in the above-mentioned device, in order to increase the number of holes to be removed from the substrate 31, the vertical length e of the square through hole 33 is as small as possible, for example, 0.8 rgm. Similarly, the interval f between the recesses 32 was also set to 0.8 mm. Since the width of a commonly used dicing blade is 0.3 mm, the standard value of the distance g between the outside of the dicing blade and the inside of the through hole 33 is (0,8-0,3)/2 = 0.25 mm. The dimensional accuracy of the substrate 31, which is a molded product, is usually ±
0.1 mm, and E r E ! Since the dicing dimensional accuracy of E s is ±0.15 mm or more, the dicing blade easily damages the first metal layer 39 or the second metal layer 40 on the side surface 45 of the device, resulting in poor conductivity. This is because a dicing apparatus is usually equipped with a microscope having a field of view of 40 mm, and performs dicing while aligning with the markers on the substrate 31. However, unlike the conventional apparatus, it is difficult to obtain accurate markers for the square through-holes 33, so the dicing dimensional accuracy is rough to ±0.15 mm or more.
従って本発明はかかる欠点を解消するものであり、すな
わちダイシング寸法精度を±０．１ｍｍ以内に管理しダ
イシング時に金属層を傷つけることなく導通不良を起こ
さない発光ダイオード装置の製造方法を提供するもので
ある。Therefore, the present invention aims to eliminate such drawbacks, that is, to provide a method for manufacturing a light emitting diode device that manages the dicing dimensional accuracy to within ±0.1 mm, does not damage the metal layer during dicing, and does not cause conduction defects. be.
（ニ）課題を解決するための手段
本発明は上述の課題を解決するために、縦と横に順次整
列した複数の凹部と六角形状のスルーホールを有する基
板に於て、第１の金属層と第２の金属層の少なくとも１
方の端部が前記凹部の底面に位置し、それぞれが前記基
板の頂面と前記スルーホールを通り互いに対向して裏面
に延びる様に形成する工程と、前記端部の上に発光ダイ
オードを固着し該発光ダイオードに配線処理し前記凹部
より広い範囲を透光性樹脂で覆う工程と、前記凹部の１
辺に平行になる様、前記六角形状のスルーホールの２つ
の頂点を順次結んで切断する工程を含む方法で発光ダイ
オード装置を製造するものである。(d) Means for Solving the Problems In order to solve the above-mentioned problems, the present invention provides a first metal layer in a substrate having a plurality of recesses and hexagonal through holes arranged in sequence vertically and horizontally. and at least one of the second metal layer
forming a light emitting diode so that one end thereof is located on the bottom surface of the recess, each passing through the top surface of the substrate and the through hole and extending to the back surface facing each other; and fixing a light emitting diode on the end portion. A step of wiring the light emitting diode and covering a wider area than the recess with a translucent resin;
The light emitting diode device is manufactured by a method including a step of sequentially connecting and cutting the two vertices of the hexagonal through hole so as to be parallel to the sides.
（ホ）作 用
上述の様に基板上の六角形状のスルーホールの２つの頂
点を順次結んで切断することにより、ダイシング寸法精
度を十分±０．１ｍｍ以内に管理することができる。(E) Function By sequentially connecting and cutting the two vertices of the hexagonal through hole on the substrate as described above, the dicing dimensional accuracy can be controlled to within ±0.1 mm.
（へ）実施例
最初に第１図乃至第３図に従い本発明の第１実施例を説
明する。第１図は基板の平面図、第２図は発光ダイオー
ド装置の平面図、第３図は第２図のＣＣ断面図である。(F) Embodiment First, a first embodiment of the present invention will be described with reference to FIGS. 1 to 3. FIG. 1 is a plan view of the substrate, FIG. 2 is a plan view of the light emitting diode device, and FIG. 3 is a CC sectional view of FIG. 2.
これらの図に於て１は液晶ポリマー等の高耐熱性樹脂か
ら成る基板である。In these figures, 1 is a substrate made of highly heat-resistant resin such as liquid crystal polymer.
基板１に於て平行に対になって縦と横に整列した複数の
凹部２と六角形状のスルーホール３を形成する。凹部２
の大きさは横１．８ｍｍ縦２．５ｍｍである。A plurality of recesses 2 and hexagonal through holes 3 are formed in parallel pairs on a substrate 1 and arranged vertically and horizontally. Recess 2
The size is 1.8 mm in width and 2.5 mm in height.
そしてメツキにてバターニングされた結果、ＩＥＩの金
属層４の端部５が凹部２の底面に設けられ、基板１の頂
面６とスルーホール３を通り裏面７までのび、その延長
方向は中心方向を向いている。As a result of being patterned with plating, the end portion 5 of the metal layer 4 of the IEI is provided on the bottom surface of the recess 2, extends through the top surface 6 of the substrate 1 and the through hole 3 to the back surface 7, and its extension direction is centered. facing the direction.
そして上述のパターニングの結果、第２の金属層８の端
部９が端部５と離れて凹部２の底面に設けられ、頂面６
とスルーホール３を通り裏面７までのび、その延長方向
は第１の金属層４と反対である。また六角形状のスルー
ホール３の大きさは横の長さａが１．８ｍｍで縦の長さ
ｂが０．８ｍｍである。As a result of the above-described patterning, the end 9 of the second metal layer 8 is provided on the bottom surface of the recess 2 apart from the end 5, and the top surface 6
It passes through the through hole 3 and extends to the back surface 7, and its extension direction is opposite to that of the first metal layer 4. The hexagonal through hole 3 has a horizontal length a of 1.8 mm and a vertical length b of 0.8 mm.
その後、端部５の上に導電性接着剤を介して発光ダイオ
ード１０を固着する。発光ダイオード１０は例えば１辺
０．２−０．４ｍｍ、厚さ０．３ｍｍの略さいころ状を
なしたＧａＰ、 ＧａＡｓＰ等がらできている。そして
この発光ダイオード１０と端部９を金属細線１１により
配線処理をする。この発光ダイオード１０と金属層ａｌ
ｌｌのみならず、凹部２より広い範囲の頂面６をエポキ
シ樹脂等がら成る透光性樹脂１２で覆う。Thereafter, a light emitting diode 10 is fixed onto the end portion 5 via a conductive adhesive. The light emitting diode 10 is made of GaP, GaAsP, or the like, and has a substantially dice shape with a side of 0.2 to 0.4 mm and a thickness of 0.3 mm, for example. Then, the light emitting diode 10 and the end portion 9 are wired using thin metal wires 11. This light emitting diode 10 and metal layer al
Not only the top surface 11 but also the top surface 6 in a wider area than the recess 2 is covered with a translucent resin 12 made of epoxy resin or the like.
その後、凹部２の１辺に平行な六角形状のスルーホール
３の２つの頂点を順次マーカーとしてダイシング装置の
顕微鏡で位置合せしながらｒ基板１の横方向にＡ 、Ａ
、Ａ 、・・・とダイシングする。そして縦方向にＢ
、Ｂ、Ｂ３Ｂ、・・・とダイシングして発光ダイオード
装置】３を完成する。発光ダイオード装置１３は側面に
台形状の四部１４を有する。四部の寸法、すなわちダイ
シングによる切断面から凹の底面までの間隔Ｃの基準値
は、ダイシング刃の幅が０．３■だから、（０，８−０
，３）／ ２ ＝０．２５ｍｍである。基板ｌの寸法精
度を±０．１＋ｎｍとしても、ダイシングは頂点をマー
カーにしているのでダイシング寸法精度は高く±０．１
ｍｍ以内に管理できる。Thereafter, the two vertices of the hexagonal through-hole 3 parallel to one side of the recess 2 are sequentially used as markers and aligned using the microscope of the dicing machine while horizontally moving the r-substrate 1 from A to A.
,A,... are diced. And vertically B
, B, B3B, . . . to complete the light emitting diode device [3]. The light emitting diode device 13 has four trapezoidal parts 14 on its side surfaces. The standard value of the dimension of the four parts, that is, the distance C from the cut surface by dicing to the bottom of the concave, is (0,8-0
, 3)/2 = 0.25 mm. Even if the dimensional accuracy of the substrate l is ±0.1+nm, the dicing uses the apex as a marker, so the dicing dimensional accuracy is high ±0.1
It can be controlled within mm.
また従来の装置では、透光性樹脂が凹部のみを覆ってい
たので透光性樹脂と金属層の熱膨張率の違いにより両者
の界面４６に於て、透光性樹脂の剥離が生じた。そのた
め、本実施例では、透光性樹脂１２を凹部２より広い範
囲に覆っているので透光性樹脂１２の密着性は向上し剥
離しなくなる。Furthermore, in the conventional device, since the light-transmitting resin covered only the concave portions, the light-transmitting resin peeled off at the interface 46 between the two due to the difference in coefficient of thermal expansion between the light-transmitting resin and the metal layer. Therefore, in this embodiment, since the light-transmitting resin 12 covers a wider area than the recess 2, the adhesiveness of the light-transmitting resin 12 is improved and no peeling occurs.
次に第４図（基板の平面図）に従い本発明の第２実施例
を説明する。この図に従い、基板１５に於て平行に対に
なって縦と横に整列した複数の凹部２と六角形状のスル
ーホール３を形成し、Ｖ字溝１６を所定の間隔で縦に（
すなわちスルーホールの整列方向と直交して）ストライ
プ状に形成する。Ｖ字溝１６は幅が０．４−０．５ｍｍ
であり、深さが０．１−０．３ｍｍである。第１実施例
と同じパターニングと配線処理と樹脂モールドをして、
横方向にＡ １Ａ ＊ Ａ ｓ・・・とダイシングする
。Next, a second embodiment of the present invention will be described with reference to FIG. 4 (plan view of the substrate). According to this figure, a plurality of recesses 2 and hexagonal through-holes 3 are formed in parallel pairs vertically and horizontally on the substrate 15, and V-shaped grooves 16 are formed vertically at predetermined intervals (
That is, they are formed in a stripe shape (orthogonal to the alignment direction of the through holes). The width of the V-shaped groove 16 is 0.4-0.5 mm.
and the depth is 0.1-0.3 mm. The same patterning, wiring processing and resin molding as in the first example were carried out.
Dicing is performed in the horizontal direction as A 1A * A s....
そして基板１５のＶ字溝１６の頂点をマーカーとしてダ
イシング装置の顕微鏡で位置合せしながら、縦方向にＤ
１Ｄ ＊ Ｄ ｓ Ｄ 、・・・とダイシングして複
数の発光ダイオード装置１７（図示せず）が完成する。Then, while using the apex of the V-shaped groove 16 of the substrate 15 as a marker and aligning it with the microscope of the dicing machine,
A plurality of light emitting diode devices 17 (not shown) are completed by dicing 1D*DsD, . . . .
従来の装置では、基板の縦方向にマーカーがないので適
正な位置で等間隔にダイシングすることができなかった
ので、凹部と側面との間の肉厚を一定に維持できなかっ
た。そのため、本実施例では基板の縦方向に設けたＶ字
溝１６の頂点をマーカーにすることにより、ダイシング
寸法精度を±０．１ｍｍ以内に管理することができて、
等間隔にダイシングすることができる。With conventional equipment, since there are no markers in the vertical direction of the substrate, it was not possible to dice the substrate at equal intervals at appropriate positions, and therefore it was not possible to maintain a constant wall thickness between the recess and the side surface. Therefore, in this embodiment, by using the apex of the V-shaped groove 16 provided in the vertical direction of the substrate as a marker, the dicing dimensional accuracy can be controlled within ±0.1 mm.
Can be diced at equal intervals.
次に第５図（発光ダイオード装置の断面図）に従い本発
明の第３実施例を説明する。第２の金属層１８の端部１
９を頂面６の上に設け、金属細線２０により発光ダイオ
ード１０と第２の金属層１８の端部１９を結線する。そ
の他の部品及び製造方法は第１実施例と同じである。Next, a third embodiment of the present invention will be described with reference to FIG. 5 (cross-sectional view of a light emitting diode device). End 1 of second metal layer 18
9 is provided on the top surface 6, and the light emitting diode 10 and the end 19 of the second metal layer 18 are connected by a thin metal wire 20. Other parts and manufacturing methods are the same as in the first embodiment.
そして従来の装置では凹部の底面に第１の金属層の端子
および第２の金属層の端子を設けるのでｈ寸法で示され
る底面は広い面積となり、発光面積が広くなるので狭指
向性が得られない。そのため本実施例では凹部２の底面
に第１の金属層４の端部５を設ければ良いので、６寸法
で示される底面の面積は従来よりも小さくできる。従っ
て、その他の寸法が従来と同じであれば、従来より発光
面積が狭くなり狭指向性が得られる。In the conventional device, since the terminals of the first metal layer and the terminals of the second metal layer are provided on the bottom of the recess, the bottom surface indicated by the h dimension has a large area, and the light emitting area is wide, so narrow directivity can be obtained. do not have. Therefore, in this embodiment, since it is sufficient to provide the end portion 5 of the first metal layer 4 on the bottom surface of the recess 2, the area of the bottom surface indicated by the 6 dimensions can be made smaller than in the conventional case. Therefore, if other dimensions are the same as the conventional one, the light emitting area is smaller than the conventional one, and narrow directivity can be obtained.
（ト）発明の効果
上述の様に、基板上に設けた六角形状のスルーホールの
２つの頂点を順次マーカーとしてダイシングするのでダ
イシング寸法精度は±０．１ｍｍ以内に管理することが
できる。その結果ダイシング時に金属層を傷つけること
がないので導通不良を防止できる。(G) Effects of the Invention As described above, since dicing is performed sequentially using the two vertices of the hexagonal through hole provided on the substrate as markers, the dicing dimensional accuracy can be controlled within ±0.1 mm. As a result, the metal layer is not damaged during dicing, so poor conduction can be prevented.
そして透光性樹脂を凹部より広い範囲に覆っているので
透光性樹脂と金属層の密着性が向上し、透光性樹脂の剥
離が防止できる。その結果、両者の隙間からの不純物等
の侵入による発光ダイオードの損傷を防止し、発光ダイ
オード装置の寿命が長くなる。Since the translucent resin covers a wider area than the recess, the adhesion between the translucent resin and the metal layer is improved, and peeling of the translucent resin can be prevented. As a result, damage to the light emitting diode due to the intrusion of impurities through the gap between the two is prevented, and the life of the light emitting diode device is extended.
さらに、基板の縦方向に設けた７字溝の頂点をマーカー
にすることにより、ダイシング寸法精度を±０．１ｍｍ
以内に管理することができる。その結果、等間隔にダイ
シングできるので凹部と側面との間の肉厚を一定に維持
することができ、発光ダイオード装置の均一強度が確保
でき、こわれにくくなる。Furthermore, by using the apex of the 7-shaped groove provided in the vertical direction of the substrate as a marker, the dicing dimensional accuracy can be improved to ±0.1 mm.
can be managed within. As a result, since the dicing can be performed at equal intervals, the wall thickness between the recess and the side surface can be maintained constant, and uniform strength of the light emitting diode device can be ensured, making it less likely to break.
そして第２の金属層の端部を基板の頂面に設は凹部の底
面に第１の金属層の端部および発光ダイオードを設ける
ことにより、凹部の底面の面積を小さくできるので、発
光面積が小さくなり狭指向性が要求される需要を満足さ
せることができる。By providing the end of the second metal layer on the top surface of the substrate and the end of the first metal layer and the light emitting diode on the bottom of the recess, the area of the bottom of the recess can be reduced, so the light emitting area can be reduced. It is possible to satisfy the demand for small and narrow directivity.
第１図は本発明の第１実施例に於ける基板の平面図、第
２図はそれの発光ダイオード装置の平面図、第３図は第
２図のＣＣ断面図、第４図は本発明の第２実施例に於け
る基板の平面図、第５図は本発明の第３実施例に於ける
発光ダイオード装置の断面図、第６図は従来の装置に於
ける基板の平面図、第７図はそれの発光ダイオード装置
の断面図である。
１．１５・・・基板、２・・・凹部、３・・・スルーホ
ール。
４・・・第１の金属層、５・・・第１の金属層の端部。
６・・・頂面、７・・・裏面、８．１８・・・第２の金
属層。
９、
ド。
１９・・・第２の金属層の端部、１０・・・発光ダイオ
−１２・・・透光性樹脂、１３・・・発光ダイオード装
置。
出願人 三洋電機株式会社外１名
代理人 弁理士 西野卓嗣（外２名）
第４図FIG. 1 is a plan view of a substrate in a first embodiment of the present invention, FIG. 2 is a plan view of a light emitting diode device thereof, FIG. 3 is a CC sectional view of FIG. 2, and FIG. 4 is a plan view of the present invention. 5 is a sectional view of a light emitting diode device in a third embodiment of the present invention, FIG. 6 is a plan view of a substrate in a conventional device, and FIG. FIG. 7 is a sectional view of the light emitting diode device. 1.15... Board, 2... Recess, 3... Through hole. 4: first metal layer; 5: end of first metal layer. 6... Top surface, 7... Back surface, 8.18... Second metal layer. 9. Do. 19... End portion of second metal layer, 10... Light emitting diode 12... Transparent resin, 13... Light emitting diode device. Applicant: Sanyo Electric Co., Ltd. and 1 other representative Patent attorney: Takuji Nishino (2 others) Figure 4
Claims (1)
ルーホールを有する基板に於て、第１の金属層と第２の
金属層の少なくとも１方の端部が前記凹部の底面に位置
し、それぞれが前記基板の頂面と前記スルーホールを通
り互いに対向して裏面に延びる様に形成する工程と、前
記端部の上に発光ダイオードを固着し該発光ダイオード
に配線処理し前記凹部より広い範囲を透光性樹脂で覆う
工程と、前記凹部の１辺に平行になる様、前記六角形状
のスルーホールの２つの頂点を順次結んで切断する工程
を含む発光ダイオード装置の製造方法。(1) In a substrate having a plurality of recesses and hexagonal through holes arranged in sequence vertically and horizontally, at least one end of the first metal layer and the second metal layer is on the bottom surface of the recess. a step of forming the light emitting diodes so as to pass through the top surface of the substrate and the through holes and extending to the back surface facing each other; fixing a light emitting diode on the end portion, processing wiring to the light emitting diode and forming the recessed portion; A method for manufacturing a light emitting diode device, comprising the steps of: covering a wider area with a translucent resin; and sequentially connecting and cutting two vertices of the hexagonal through hole so as to be parallel to one side of the recess.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2220364A JPH04102378A (en) | 1990-08-21 | 1990-08-21 | Manufacture of light emitting diode device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2220364A JPH04102378A (en) | 1990-08-21 | 1990-08-21 | Manufacture of light emitting diode device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04102378A true JPH04102378A (en) | 1992-04-03 |
Family
ID=16749981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2220364A Pending JPH04102378A (en) | 1990-08-21 | 1990-08-21 | Manufacture of light emitting diode device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04102378A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5670797A (en) * | 1994-12-06 | 1997-09-23 | Sharp Kabushiki Kaisha | Compact light-emitting device with sealing member and light-transmitting resin seal |
| JP2002064226A (en) * | 2000-06-28 | 2002-02-28 | Agilent Technol Inc | Light source |
| US6686609B1 (en) * | 2002-10-01 | 2004-02-03 | Ultrastar Limited | Package structure of surface mounting led and method of manufacturing the same |
| JP2005183993A (en) * | 2003-12-19 | 2005-07-07 | Lumileds Lighting Us Llc | Led package assembly |
| WO2023008158A1 (en) * | 2021-07-29 | 2023-02-02 | 株式会社日立ハイテク | Absorptiometry device and biochemical assay device comprising same |
-
1990
- 1990-08-21 JP JP2220364A patent/JPH04102378A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5670797A (en) * | 1994-12-06 | 1997-09-23 | Sharp Kabushiki Kaisha | Compact light-emitting device with sealing member and light-transmitting resin seal |
| US5814837A (en) * | 1994-12-06 | 1998-09-29 | Sharp Kabushiki Kaisha | Compact light-emitting device with sealing member |
| US5882949A (en) * | 1994-12-06 | 1999-03-16 | Sharp Kabushiki Kaisha | Method of making compact light-emitting device with sealing member |
| JP2002064226A (en) * | 2000-06-28 | 2002-02-28 | Agilent Technol Inc | Light source |
| US6686609B1 (en) * | 2002-10-01 | 2004-02-03 | Ultrastar Limited | Package structure of surface mounting led and method of manufacturing the same |
| JP2005183993A (en) * | 2003-12-19 | 2005-07-07 | Lumileds Lighting Us Llc | Led package assembly |
| WO2023008158A1 (en) * | 2021-07-29 | 2023-02-02 | 株式会社日立ハイテク | Absorptiometry device and biochemical assay device comprising same |
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