JPH0396224A - Manufacture of soi substrate - Google Patents
Manufacture of soi substrateInfo
- Publication number
- JPH0396224A JPH0396224A JP23362089A JP23362089A JPH0396224A JP H0396224 A JPH0396224 A JP H0396224A JP 23362089 A JP23362089 A JP 23362089A JP 23362089 A JP23362089 A JP 23362089A JP H0396224 A JPH0396224 A JP H0396224A
- Authority
- JP
- Japan
- Prior art keywords
- film
- amorphous silicon
- silicon film
- substrate
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 36
- 238000002844 melting Methods 0.000 claims abstract description 20
- 230000008018 melting Effects 0.000 claims abstract description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 4
- 239000012212 insulator Substances 0.000 abstract description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 3
- 229910052786 argon Inorganic materials 0.000 abstract description 2
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000001953 recrystallisation Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体装置の製造に用いられるＳ０１ （Ｓ
ＩＬＩＣＯＮ ＯＮ ＩＮＳＵＬＡＴＯＲ）Ｍ板の製造
方法に係り、特に表面平滑性に優れるＳｏｌ基板の製造
方法に関する．
〔従来の技術〕
絶縁体ｓＦＬ上または単結晶シリコン基板の非晶賞絶綽
膜上に多結晶シリコン膜または非晶質シリコン膜を形威
し、レーザ光を照射して多結晶シリコン膜または非晶質
シリコン膜を溶融再結晶化して絶縁体の上に単結晶シリ
コン膜を形成する方法が知られている．再結晶シリコン
にＭＯＳＦＥＴなどの素子を形成する場合には再結晶シ
リコンの表面は平坦性が要求される．このため再結晶化
を行う以前の膜としては威ｌＩ１時に平坦性の優れる非
晶質シリコン膜が用いられる．再結晶化により単結晶シ
リコン膜を形威する場合、非晶質シリコン膜は溶融され
るので再結晶時に表面に波状の凹凸が現われる場合があ
り、この凹凸の発生を防ぎ表面の平坦性を維持するため
非晶質シリコン膜の上にチッ化シリコン膜や酸化膜など
の高融点被膜が設けられる．この高融点被膜は非晶質シ
リコン膜の表面状熊を転写する被膜であるとともにレー
ザ光照射時のレーザ光反射防止膜としてＩ能する．第４
図は従来のＳｏｌ基板の製造工程を示す断面図である．
非晶質酸化１１１２の上に減圧ＣＶＤ法により非晶質シ
リコン膜３が、続いてチッ化シリコン１１Ｉ４が形威さ
れる．ＩＯＷの双峰型のレーザビームｌが走査しながら
照射され、非晶質シリコン膜の溶融再結晶化が行われる
．高融点被膜は非晶質シリコン膜の表面を転写している
ので非晶質シリコン膜の溶融再結晶に際し、初期の非晶
質シリコン膜の表面が再現される．再結晶後高融点被膜
はエッチングで除去される．
〔発明が解決しようとする課題〕
しかしながらこのような従来の３０１基板の製造方法に
おいては高融点被膜の表面平滑性が良好であるために、
高融点被膜内部に入射したレーザ光は非晶質シリコンと
の界面で反射されたあと高融点被膜より再び空気中へ出
射されることとなりそのためレーザの吸収率が悪く、非
晶質シリコンの溶融に大きなレーザ出力（ ＩＯＷ ）
が必要になるという問題があった．
この発明は上述のような点に鑑みてなされ、その目的は
高融点被膜の上に光吸収率の高い被膜を形成することに
より、低いレーザ出力で表面平滑性に優れるＳｏｌ基板
を製造する方法を提供することにある．
〔課題を解決するための手段〕
上述の目的はこの発明によれば第１工程と、第２工程と
、第３工程と、第４工程、とを有し、第！工程は絶縁体
基板上また゜は単結晶シリコン基板の非晶質絶縁膜の上
に非晶質シリコン膜を形成するものであり、
第２工程は前記非晶質シリコン膜の上に高融点被膜を形
威するものであり、
第３工程は前記高融点被膜の上−に多結晶シリコン膜を
形成するものであり、
第４工程は、レーザ光を照射して前記非晶質シリコン膜
を溶融再結晶化させるとすることにまり達威される．
高融点被膜はレーザ光照射によって溶融することがなく
、非晶質シリコン膜の表面を転写した状履がレーザ光照
射中維持される．
〔作用〕
多結晶シリコン膜は第３図に示すように表面に凹凸があ
る．このために非晶質シリコン膜と高融点被膜と、多結
晶シリコン膜の積層体に垂直に投射されたレーザビーム
は、多結晶シリコンとの界面で屈折して多結晶シリコン
中に入射する．レーザビームは高融点被膜との界面で一
部反射されるが、この反射光はシリコンの屈折率が高い
（約ｌｌ）ため、空気との界面で全反射を受けやすい．
このようにしてレーザビームは多結晶シリコンから空気
中に出射することができず光吸収率が高くなる．〔実施
例〕
次にこの発明の実施例を図面に碁いて説明する．第ｌＩ
ｌｌはこの発明の実施例に係るＳｏｌ基板の製造工程を
示す断面図で単結晶シリジン基板上の酸化１１２の上に
非晶貿シリコン膜３．′チッ化シリコン膜４．多結晶シ
リコン１１５が順次積層される．非晶賞シリコン膜３は
減圧ＣｖＯ法によって次の条件で製造される．胸を２０
％含むシランガスを２５０ｉｄ／−１ａ．の流置で流す
．圧力は？ Ｏ Ｐ ａ ’，碁板温度は５２０℃であ
る． ２００〜３００ｓｉｎ，ののち５００〜ｓｏｏ
ｏ人厚の非晶質シリコン膜が得られる．チッ化シリコン
膜４はアンモニアとシランガスをそれぞれ２５０ｄ／ｍ
１ｎ．の流量で流す．圧力は１００Ｐａ，基板温度は２
５０〜３００℃である，ＲＦパワー４００Ｗで２００〜
３００ｓｌａ，のあと０．１〜０．５ｎのチッ化シリコ
ン１１４が得られる．多結晶シリコンｗＡ５は基板温度
を６００℃．時間４０ｓｉｎ，とする以外は非晶質シリ
コンの場合と同一の条件が用いられる．厚膜は０．５ｎ
である．第２図は非晶質シリコン膜を威膜後島状にバタ
ーニングする場合の製造工程を示す断ｗｔｍである．第
１図，第２図の場合ともに出力５〜ＩＯＷのレーザ光（
直径６０−）で走査される．走査速度は５０ｍｓ／ｓで
ある．直線状に走査したあと、２０ＩＩｍ中心をずらし
て再度走査される．レーザはアルゴンレーザであり、レ
ーザ光の波長は５４１．５ｎ曽および４８８■である．
走査後多結晶シリコン１１５とチフ化シリコン膜４はエ
ッチングで除去される．〔発明の効果〕
この発明によれば第１工程と、第２工程と、第３工程と
、第４工程、とを有し、
第１工程は絶縁体基板上または単結晶シリコン基板の非
晶質絶縁膜の上に非晶質シリコン膜を形放するものであ
り、
第２工程は前記非晶質シリコン膜の上に高融点被膜を形
戒するものであり、
第３工程は前記高融点被膜の上に多結晶シリコン膜を形
成するものであり、
第４工程は、レーザ光を照射して前記非晶質シリコン膜
を熔融再結晶化させるので、多結晶シリコン膜の凹凸と
大きな屈折率とにより、多結晶シリコン膜内に入射した
レーザ光は、空気中に再度出射することができず、多結
晶シリコン膜中のレーザ光の吸収率が高まって従来の約
Ａのレーザ出力を用いて容易に非晶質シリコン膜を溶融
再結晶化させて、表面平滑性に優れるＳｏｌ・基板を製
造することが可能となる．[Detailed Description of the Invention] [Industrial Field of Application] This invention relates to S01 (S01) used in the manufacture of semiconductor devices.
This article relates to a method for manufacturing an ILICON (ILICON ON INSULATOR) M board, and particularly to a method for manufacturing a Sol board with excellent surface smoothness. [Prior art] A polycrystalline silicon film or an amorphous silicon film is formed on an insulator sFL or an amorphous film on a single crystal silicon substrate, and a laser beam is irradiated to form the polycrystalline silicon film or amorphous silicon film. A known method is to melt and recrystallize a crystalline silicon film to form a single crystal silicon film on an insulator. When forming elements such as MOSFETs on recrystallized silicon, the surface of the recrystallized silicon must be flat. For this reason, an amorphous silicon film with excellent flatness is used as the film before recrystallization. When forming a single-crystal silicon film by recrystallization, the amorphous silicon film is melted, so wavy irregularities may appear on the surface during recrystallization.The generation of these irregularities is prevented and the surface flatness is maintained. To achieve this, a high melting point film such as a silicon nitride film or an oxide film is provided on top of the amorphous silicon film. This high melting point film is a film that transfers the surface roughness of the amorphous silicon film, and also functions as an antireflection film for laser light during laser light irradiation. Fourth
The figure is a cross-sectional view showing the manufacturing process of a conventional Sol substrate.
An amorphous silicon film 3 is formed on the amorphous oxide 1112 by low pressure CVD, followed by a silicon nitride film 11I4. IOW's bimodal laser beam l is irradiated while scanning to melt and recrystallize the amorphous silicon film. Since the high melting point film is a transfer of the surface of the amorphous silicon film, when the amorphous silicon film is melted and recrystallized, the surface of the initial amorphous silicon film is reproduced. After recrystallization, the high melting point film is removed by etching. [Problems to be Solved by the Invention] However, in such a conventional method for manufacturing a 301 substrate, since the surface smoothness of the high melting point coating is good,
The laser light that enters the high melting point film is reflected at the interface with the amorphous silicon and then emitted from the high melting point film into the air again, resulting in poor laser absorption and the melting of the amorphous silicon. Large laser power (IOW)
The problem was that it required This invention was made in view of the above points, and its purpose is to provide a method for manufacturing a Sol substrate with excellent surface smoothness with low laser output by forming a film with high light absorption on a high melting point film. The purpose is to provide. [Means for Solving the Problem] According to the present invention, the above-mentioned object has a first step, a second step, a third step, a fourth step, and the first step! The step is to form an amorphous silicon film on an amorphous insulating film on an insulating substrate or a single crystal silicon substrate, and the second step is to form a high melting point film on the amorphous silicon film. The third step is to form a polycrystalline silicon film on the high melting point coating, and the fourth step is to irradiate laser light to melt and remelt the amorphous silicon film. I am very satisfied with the idea of crystallizing it. The high melting point coating does not melt when irradiated with laser light, and the transferred state of the surface of the amorphous silicon film is maintained during laser irradiation. [Function] As shown in Figure 3, the polycrystalline silicon film has an uneven surface. For this reason, a laser beam projected perpendicularly onto a stack of an amorphous silicon film, a high melting point film, and a polycrystalline silicon film is refracted at the interface with the polycrystalline silicon and enters the polycrystalline silicon. The laser beam is partially reflected at the interface with the high melting point coating, but this reflected light is susceptible to total reflection at the interface with air because silicon has a high refractive index (approximately ll).
In this way, the laser beam cannot be emitted from polycrystalline silicon into the air, resulting in a high light absorption rate. [Example] Next, an example of this invention will be explained with reference to the drawings. No. 1I
ll is a cross-sectional view showing the manufacturing process of a Sol substrate according to an embodiment of the present invention, in which an amorphous silicon film 3. 'Silicon nitride film 4. Polycrystalline silicon 115 is sequentially laminated. The amorphous silicon film 3 is manufactured by the reduced pressure CvO method under the following conditions. 20 chest
% of silane gas containing 250 id/-1a. Flow with a flow rate of . What's the pressure? O P a ', the Go board temperature is 520°C. 200~300sin, later 500~soo
An amorphous silicon film with a thickness of 100 cm can be obtained. The silicon nitride film 4 contains ammonia and silane gas at 250 d/m each.
1n. Flow at a flow rate of Pressure is 100 Pa, substrate temperature is 2
50~300℃, 200~ with RF power 400W
After 300 sla, 0.1-0.5n silicon nitride 114 is obtained. Polycrystalline silicon wA5 has a substrate temperature of 600°C. The same conditions as in the case of amorphous silicon are used except that the time is 40 sin. Thick film is 0.5n
It is. Figure 2 is a cross-sectional view showing the manufacturing process when buttering an amorphous silicon film into an island shape. In both cases of Fig. 1 and Fig. 2, the laser beam with an output of 5 to IOW (
60-) in diameter. The scanning speed was 50ms/s. After scanning in a straight line, the center is shifted by 20 IIm and scanned again. The laser is an argon laser, and the wavelength of the laser light is 541.5 nm and 488 cm.
After scanning, the polycrystalline silicon 115 and the silicon nitride film 4 are removed by etching. [Effects of the Invention] According to the present invention, there are a first step, a second step, a third step, and a fourth step. The second step is to form a high melting point film on the amorphous silicon film, and the third step is to form a high melting point film on the amorphous silicon film. A polycrystalline silicon film is formed on the film, and the fourth step is to melt and recrystallize the amorphous silicon film by irradiating laser light, so that the unevenness and large refractive index of the polycrystalline silicon film are reduced. As a result, the laser light that has entered the polycrystalline silicon film cannot be emitted into the air again, and the absorption rate of the laser light in the polycrystalline silicon film increases, making it difficult to use the conventional laser output of about A. It becomes possible to easily melt and recrystallize an amorphous silicon film to produce a Sol substrate with excellent surface smoothness.
第１図はこの発明の実施例に係るＳｏｌ基板の製造工程
を示す断面図、第２図はこの発明の異なる実施例に係る
ＳＯＩ基板の製造工程を示す断面図、第３図はこの発明
の実施例に係るＳｏ１基板の製造工程においてレーザ光
が全反射される状態を示す断面図、第４図は従来のＳｏ
ｌ基板の製造工程を示す断面図である．
２二酸化膜、３：非晶質シリコン膜、４：チッ第１図
３
第２図
第４図FIG. 1 is a sectional view showing the manufacturing process of a Sol substrate according to an embodiment of the invention, FIG. 2 is a sectional view showing the manufacturing process of an SOI substrate according to a different embodiment of the invention, and FIG. FIG. 4 is a cross-sectional view showing a state in which laser light is totally reflected in the manufacturing process of the So1 substrate according to the embodiment, and FIG.
1 is a cross-sectional view showing the manufacturing process of the L substrate. 2 Dioxide film, 3: Amorphous silicon film, 4: Chi Figure 1 Figure 3 Figure 2 Figure 4
Claims (1)
とを有し、 第１工程は絶縁体基板上または単結晶シリコン基板の非
晶質絶縁膜の上に非晶質シリコン膜を形成するものであ
り、 第２工程は前記非晶質シリコン膜の上に高融点被膜を形
成するものであり、 第３工程は前記高融点被膜の上に多結晶シリコン膜を形
成するものであり、 第４工程は、レーザ光を照射して前記非晶質シリコン膜
を溶融再結晶化させるものである、ことを特徴とするＳ
ＯＩ基板の製造方法。[Claims] 1) a first step, a second step, a third step, a fourth step,
The first step is to form an amorphous silicon film on the insulating substrate or the amorphous insulating film of the single crystal silicon substrate, and the second step is to form an amorphous silicon film on the amorphous silicon film. The third step is to form a polycrystalline silicon film on the high melting point film, and the fourth step is to irradiate the amorphous silicon with laser light. S characterized by melting and recrystallizing the film.
A method for manufacturing an OI substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23362089A JPH0396224A (en) | 1989-09-08 | 1989-09-08 | Manufacture of soi substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23362089A JPH0396224A (en) | 1989-09-08 | 1989-09-08 | Manufacture of soi substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0396224A true JPH0396224A (en) | 1991-04-22 |
Family
ID=16957901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23362089A Pending JPH0396224A (en) | 1989-09-08 | 1989-09-08 | Manufacture of soi substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0396224A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005347765A (en) * | 1999-08-31 | 2005-12-15 | Sharp Corp | Semiconductor device and manufacturing method therefor, and method of forming silicon thin film |
| JP2009075908A (en) * | 2007-09-21 | 2009-04-09 | Sony Corp | Web page browsing history management system, web page browsing history management method, and computer program |
-
1989
- 1989-09-08 JP JP23362089A patent/JPH0396224A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005347765A (en) * | 1999-08-31 | 2005-12-15 | Sharp Corp | Semiconductor device and manufacturing method therefor, and method of forming silicon thin film |
| JP2009075908A (en) * | 2007-09-21 | 2009-04-09 | Sony Corp | Web page browsing history management system, web page browsing history management method, and computer program |
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