JPH0393146A - Manufacture of thin film element - Google Patents

Abstract

PURPOSE:To simplify processes for bridging narrow thin films on a substrate by performing the patterning of the thin films and the formation of the bridge structure simultaneously. CONSTITUTION:A first film 2 made of a material having a corrosion rate higher than a thin film to be formed with respect to an etching solution is superposed on a substrate 1. A second film 3 as the thin film is laminated on the first film 2. On the second film 3, a maskant 7 (mask) having a pattern consisted of a narrow portion 5 and wide portions 4, 6 is formed. Using the etching solution, the patterning of the first and second films 2, 3 is performed, and simultaneously, the first film 2 under the narrow portion 5 is removed so that a bridge structure is formed. Therefore, the number of processes can be decreased, and, in etching, any damage cannot be exerted on the second film 3 because the surface of the film 3 is coated with the maskant 7.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field 1] The present invention relates to a method for manufacturing a thin film element. E Jubei technology 1 Jubei, special application 1986 3-2 3 8 3 4 No. 6 and special 1
As shown in No. 11F@63-238347, a conductive film such as copper is first formed on the substrate, the film is deposited on the Rennost pattern, and the material deposited on it is removed together with the Rennost pattern. A filament film of a high-melting point metal such as tungsten is patterned on the conductive film by a method such as a 7-to-7 method, and the conductive film is etched to remove the conductive film under the narrow filament film. By doing this, the filament membrane was made to float in the air. [Problem M to be Solved by the Invention] However, such conventional methods require a large number of manufacturing steps, including a filament film patterning process and a conductive film etching process. Furthermore, since the conductive film was etched after the filament patterning process, the filament film was damaged by the etching solution.

The present invention was made in order to solve the above-mentioned problems, and its purpose is to enable thin films to be crosslinked with fewer steps and with less damage. [Means for Solving the Problem] To achieve this object, the thin film device manufacturing method of the present invention is a method of forming a thin film having a narrow width on a substrate, the method comprising:
a first film forming step of forming a first ljI of a material that corrodes faster in an etching solution than the thin film on the substrate; a second film forming step formed on the thin film, a narrow part having a width approximately equal to that of the thin film, and a pair of wide parts having a width larger than the thin film continuously provided at both ends of the narrow part; a muscat forming step of forming a muscat having a pattern shape, and etching the IM and the second film with the etching solution.
5I into the pattern shape, and at the same time, the second I! When the first film, which has a faster corrosion rate, is viewed in plan, @21! an etching step of removing a portion other than the second IlI and a portion located under the narrow width portion of the second IlI;
This process consists of removing the muscat. [Operation 1] According to the present invention having the above-mentioned principles, first, a first film made of a material that corrodes faster in the etching solution than the thin film to be formed is formed on the substrate, and then the first film is formed on the substrate. The 2nd l is a thin film that should be impressive! 1, form a mask cut pattern consisting of a narrow part and a pair of wide parts on it, pattern the first film and the second film with an etching solution, and form a narrow part of the second film in the first film. Formation of the crosslinked structure of the filament by removing the lower part can be performed simultaneously, and the number of steps can be reduced. Also, during etching, the surface of the filament film (younger 2m) is covered with muscat, so it will not be damaged. F Example 1 An example embodying the present invention will be described below with reference to the drawings. As shown in FIG.
II! The first film 2 is made of a material such as copper with high electrical conductivity, and the second film 3 is formed by sputtering, vapor deposition, screen printing, etc. This is achieved through thin film formation methods such as plating. Next, as shown in FIG. 2, the filament has a narrow part 5 at the center having approximately the same width as the filament, and wide parts 4 and 6 having approximately the same width as the support part are continuously provided at both ends thereof. Muscat 7, which has a pattern shape, takes shape. Muscat 7: This is a photoresist that can be accurately patterned even when the width of the narrow portion 5 is several tens of microns. Thereafter, an etching solution is used that corrodes both the first film 2 and the second film 3, and the corrosion rate of III2 is faster than that of the second film 3, in this case, 60% HNO. The first film 2 and the second film 3 are etched by being immersed in an etching solution containing a 1:1 mixture of solution and 40% HF. By this, the second l
I3 is removed except for the part where the muscat toma was provided, and is left in the same pattern shape as the muscat 7. Subsequently, in plan view of III-2, the portion other than the portion where the muscat 7 was provided is removed, leaving the same pattern shape as the muscat 7. If the etching is continued further, the first film 2, which is etched at a high rate, will be corroded from the sides, and an undercut will occur, and the portion located under the narrow portion 5 will be completely removed. (Fig. 3) After R, the Muscat 7 is removed by an organic solvent such as acetone, and a filament 8 floating in the air and having a frame structure V4 is formed as shown in Fig. #S4. Effects of the Invention As is clear from the detailed description above, according to the present invention, the patterning of 7 filaments and the
Since liHI4 formation can be performed simultaneously, the process is simplified. Furthermore, since the filament film is protected from the etching solution by masking, a filament pattern with less damage can be obtained.

[Brief explanation of drawings]

Figures 1 to 4 are schematic explanatory diagrams of processes related to embodiments of the present invention. 1... Insulating substrate, 2... First film, 3... Second JI
I, 4... Wide part, 5... Narrow part, 6... Wide part, 7... Muscat, 8... Filament.

Claims (1)

[Claims] 1. A method for crosslinking a thin film with a narrow width on a substrate, the method comprising: forming on the substrate a first film made of a material that corrodes faster in an etching solution than the thin film; a first film forming step; a second film forming step of forming a second film made of the same material as the thin film on the first film; a narrow portion having a width approximately equal to that of the thin film; a muscat forming step of forming a pattern-shaped muscat consisting of a pair of wide parts that are larger in width than the thin film provided continuously at both ends of the thin film; By etching the film, the second film is patterned into the pattern shape, and at the same time, the first film, which has a higher corrosion rate than the second film, is etched, and the parts other than the second film and the second film are etched. A method for manufacturing a thin film element, comprising: an etching step for removing a portion located under the narrow width portion; and a step for removing the muscat. 2. The thin film is an incandescent filament, and the first film is made of a material with high electrical conductivity, and is left under the wide part of the first film to support the incandescent filament. 2. The thin film device manufacturing method according to claim 1, wherein the portion is used as a drive line for supplying drive power to the filament.