JPH0383386A - Semiconductor laser module - Google Patents
Semiconductor laser moduleInfo
- Publication number
- JPH0383386A JPH0383386A JP21866989A JP21866989A JPH0383386A JP H0383386 A JPH0383386 A JP H0383386A JP 21866989 A JP21866989 A JP 21866989A JP 21866989 A JP21866989 A JP 21866989A JP H0383386 A JPH0383386 A JP H0383386A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser
- current
- laser module
- forward current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 238000001816 cooling Methods 0.000 claims abstract description 14
- 239000013307 optical fiber Substances 0.000 claims abstract description 8
- 230000003287 optical effect Effects 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 241000220317 Rosa Species 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、広い動作温度範囲を有する光フアイバ通信用
半導体レーザモジュールに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor laser module for optical fiber communication having a wide operating temperature range.
従来、この種の半導体レーザモジュールは、第２図に示
すように半導体レーザ１からの出射光をし／ズ２によっ
て集光して光ファイバ３に結合する光学系と、半導体レ
ーザ１の温度を抵抗値の変化に置き換えて検出するサー
ミスタ４と、半導体レーザ１を冷却するためにベルチェ
効果を利用する電子冷却素子５とで構成されている。Conventionally, this type of semiconductor laser module has an optical system that condenses the light emitted from the semiconductor laser 1 by a lens 2 and couples it to an optical fiber 3, as shown in FIG. 2, and an optical system that controls the temperature of the semiconductor laser 1. It is composed of a thermistor 4 that detects a change in resistance value, and an electronic cooling element 5 that uses the Beltier effect to cool the semiconductor laser 1.
このような構成において、サーミスタ４によって半導体
レーザ１の温度変化に比例した抵抗値変化を検出する。In such a configuration, the thermistor 4 detects a change in resistance value proportional to a change in temperature of the semiconductor laser 1.
ベルチェ効果を利用した電子冷却素子５を駆動する電流
工（第１図参照）は、サーミスタ４の抵抗値変化を用い
て帰還制御される。The electric current generator (see FIG. 1) that drives the electronic cooling element 5 using the Beltier effect is feedback-controlled using changes in the resistance value of the thermistor 4.
この帰還ループによって半導体レーザ１の温度は、予め
設定した値に保たれる。なか、フォトダイオード６は、
半導体レーザ１の後方出力光を電流に変換し、半導体レ
ーザ１の出力をモニタするために設けられている。This feedback loop maintains the temperature of the semiconductor laser 1 at a preset value. Among them, the photodiode 6 is
It is provided to convert the rear output light of the semiconductor laser 1 into an electric current and to monitor the output of the semiconductor laser 1.
上述した従来の半導体レーザモジュールは、温度検出を
行うサーミスタ４をモジュール内部に設置する必要があ
る。ところが、サーミスタ４と半導体レーザ１との熱結
合が十分でないと、周囲温度の急激な変化に伴う半導体
レーザ１の温度変化が正確に検出できない。さらに電子
冷却素子５の駆動電流Ｉを制御する帰還回路は、帰還ル
ープの安定性確保のため、直流に近い領域に応答を制限
した設計とするので、急激な温度変化には追従できず、
半導体レーザ１の温度が上昇して動作が不安定となると
いう問題があった。The conventional semiconductor laser module described above requires a thermistor 4 for detecting temperature to be installed inside the module. However, if the thermal coupling between the thermistor 4 and the semiconductor laser 1 is insufficient, temperature changes in the semiconductor laser 1 due to rapid changes in ambient temperature cannot be accurately detected. Furthermore, the feedback circuit that controls the drive current I of the thermoelectric cooling element 5 is designed to limit its response to a region close to direct current in order to ensure the stability of the feedback loop, so it cannot follow sudden temperature changes.
There was a problem in that the temperature of the semiconductor laser 1 rose and the operation became unstable.
このような課題を解決するために本発明による半導体レ
ーザモジュールは、半導体レーザの出射光を光ファイバ
に結合するための光学系と、半導体レーザを冷却するた
めの電子冷却素子とを含む半導体レーザモジュールに半
導体レーザの順方向電流を検出する手段を設けたもので
ある。In order to solve these problems, a semiconductor laser module according to the present invention includes an optical system for coupling emitted light from a semiconductor laser to an optical fiber, and an electronic cooling element for cooling the semiconductor laser. The device is equipped with means for detecting the forward current of the semiconductor laser.
本発明においては、検出した順方向電流に比例する電流
を電子冷却素子に供給する。In the present invention, a current proportional to the detected forward current is supplied to the electronic cooling element.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明による半導体レーザモジュールの一実施
例を示すブロック図であシ、上述の図と同一部分には同
一符号を付しである。同図において、半導体レーザ１か
らの出射光はレンズ２によシ集光されて光ファイバ３に
結合される。半導体レーザ１を冷却するための電子冷却
素子５とレンズ２とが半導体レーザ１を固定する基板に
取シつけられている。この半導体レーザモジュール１０
には半導体レーザの端子１１．１２と、モニタ用フォト
ダイオード６の端子１３．１４とが設けである。光ファ
イバ３は半導体レーザモジュール１０の出力光を光送信
器の出力として取り出す。変調回路１５はパルス電流を
半導体レーザ１に加える。FIG. 1 is a block diagram showing an embodiment of a semiconductor laser module according to the present invention, and the same parts as in the above-mentioned figures are given the same reference numerals. In the figure, light emitted from a semiconductor laser 1 is focused by a lens 2 and coupled to an optical fiber 3. An electronic cooling element 5 and a lens 2 for cooling the semiconductor laser 1 are attached to a substrate to which the semiconductor laser 1 is fixed. This semiconductor laser module 10
Terminals 11 and 12 of the semiconductor laser and terminals 13 and 14 of the monitor photodiode 6 are provided. The optical fiber 3 takes out the output light of the semiconductor laser module 10 as the output of the optical transmitter. Modulation circuit 15 applies pulsed current to semiconductor laser 1 .
同時に光出力安定化回路１６はフォトダイオード６の充
電流変化に応じて半導体レーザ１の直流バイアス電流を
制御し、半導体レーザ１の出力光パワーの平均値を一定
に保つ。温度制御回路１７は半導体レーザ１の順方向電
流検出回路として半導体レーザ１に直列に挿入した抵抗
１８の電圧降下を検出し、この値に比例する駆動電流工
を電子冷却素子５に供給する。At the same time, the optical output stabilizing circuit 16 controls the DC bias current of the semiconductor laser 1 according to the change in the charging current of the photodiode 6, and keeps the average value of the output optical power of the semiconductor laser 1 constant. The temperature control circuit 17 serves as a forward current detection circuit for the semiconductor laser 1 and detects a voltage drop across a resistor 18 inserted in series with the semiconductor laser 1, and supplies a driving current proportional to this value to the electronic cooling element 5.
以上説明したように本発明による半導体レーザモジュー
ルは、半導体レーザの冷却を、自身の駆動電流値を検出
することで制御するため、温度検出部に熱的な時定数を
持たない。このため、温度制御回路の追従性が高められ
、半導体レーザが一時的に高温動作を強いられることは
ない。すなわち、半導体レーザの動作不安定が回避でき
ると言う効果がある。As described above, the semiconductor laser module according to the present invention controls the cooling of the semiconductor laser by detecting its own drive current value, so the temperature detection section does not have a thermal time constant. Therefore, the followability of the temperature control circuit is improved, and the semiconductor laser is not temporarily forced to operate at a high temperature. That is, there is an effect that unstable operation of the semiconductor laser can be avoided.
第１図は本発明による半導体レーザモジュールの一実施
例を示すブロック図、第２図は従来のレーザモジュール
の構成を示す図である。
１・・・・半導体レーザ、２・・・・レンズ、３・・・
・光ファイバ、４・・・・サーミスタ、５・・・１電子
冷却素子、６・・・・フォトダイオード、１０・・・・
半導体レーザモジュール、１１．１２・・・・半導体レ
ーザの端子、１３゜１４・・・・モニタ用フォトダイオ
ードの端子、１５・・・・変調回路、１６・・・・光出
力安定化回路、１７・・・・温度制御回路、１８・・・
・抵抗。FIG. 1 is a block diagram showing an embodiment of a semiconductor laser module according to the present invention, and FIG. 2 is a diagram showing the configuration of a conventional laser module. 1... Semiconductor laser, 2... Lens, 3...
・Optical fiber, 4...thermistor, 5...1 electronic cooling element, 6...photodiode, 10...
Semiconductor laser module, 11.12... Semiconductor laser terminal, 13° 14... Monitor photodiode terminal, 15... Modulation circuit, 16... Optical output stabilization circuit, 17 ...Temperature control circuit, 18...
·resistance.
Claims (1)
、上記半導体レーザを冷却する電子冷却素子とを含む半
導体レーザモジュールにおいて、上記半導体レーザの順
方向電流を検出する電流検出手段を有し、検出した順方
向電流に比例する電流を上記電子冷却素子に供給するこ
とを特徴とした半導体レーザモジュール。A semiconductor laser module including an optical system that couples emitted light from a semiconductor laser to an optical fiber, and an electronic cooling element that cools the semiconductor laser, the semiconductor laser module having a current detection means for detecting a forward current of the semiconductor laser; A semiconductor laser module, characterized in that a current proportional to the forward current is supplied to the electronic cooling element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21866989A JPH0383386A (en) | 1989-08-28 | 1989-08-28 | Semiconductor laser module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21866989A JPH0383386A (en) | 1989-08-28 | 1989-08-28 | Semiconductor laser module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0383386A true JPH0383386A (en) | 1991-04-09 |
Family
ID=16723571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21866989A Pending JPH0383386A (en) | 1989-08-28 | 1989-08-28 | Semiconductor laser module |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0383386A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5361290A (en) * | 1976-11-12 | 1978-06-01 | Matsushita Electric Ind Co Ltd | Temperature controller of semiconductor laser |
| JPS58182286A (en) * | 1982-04-16 | 1983-10-25 | Sanyo Electric Co Ltd | Semiconductor laser element drive circuit |
| JPS6222494A (en) * | 1985-07-22 | 1987-01-30 | Yokogawa Electric Corp | Stabilizing device for semiconductor laser |
-
1989
- 1989-08-28 JP JP21866989A patent/JPH0383386A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5361290A (en) * | 1976-11-12 | 1978-06-01 | Matsushita Electric Ind Co Ltd | Temperature controller of semiconductor laser |
| JPS58182286A (en) * | 1982-04-16 | 1983-10-25 | Sanyo Electric Co Ltd | Semiconductor laser element drive circuit |
| JPS6222494A (en) * | 1985-07-22 | 1987-01-30 | Yokogawa Electric Corp | Stabilizing device for semiconductor laser |
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