JPS5955083A - Semiconductor laser output stabilizing system - Google Patents
Semiconductor laser output stabilizing systemInfo
- Publication number
- JPS5955083A JPS5955083A JP16486282A JP16486282A JPS5955083A JP S5955083 A JPS5955083 A JP S5955083A JP 16486282 A JP16486282 A JP 16486282A JP 16486282 A JP16486282 A JP 16486282A JP S5955083 A JPS5955083 A JP S5955083A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- temperature
- output
- semiconductor
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】 （１）発明の技術分野 。[Detailed description of the invention] (1) Technical field of the invention.
本発明は半導体レーザーのバイアス電流セよび駆動・ぐ
ルス電流をその温度の最適値に制御することにより半導
体レーデ−の出力を安定化する半導体レーザー出力安定
化方式に−４るものである。The present invention is directed to a semiconductor laser output stabilization method for stabilizing the output of a semiconductor laser by controlling the bias current and drive current of the semiconductor laser to optimum values for its temperature.
（２）従来技術と問題点 一般に半導体レーデ−は前後２方向に出力を発生する。(2) Conventional technology and problems Generally, a semiconductor radar generates output in two directions, front and rear.
ここにおいて半導体レーザーの駆動に用いる方向を前方
向とし他の方向を後方向とする。Here, the direction used to drive the semiconductor laser is the forward direction, and the other directions are the backward direction.
半導体レーザーの出力□は温度依存性を有するためその
□出力を、安定化するため従来は後方向の出力光電流を
モニターしてそれによってバイアス電流および駆動／ｌ
ｌスス流を制御していた。しかし半導体レーザーの前方
向と後方向の光出力は同一であることが理想的であるが
必ずしも同一でなく、それに加えて前記前方向の出力゛
と前記後方向の出力光電流の温度特性は必ずしも同一で
なく温度が変化するとその温度における最適なバイアス
電流値および・駆動パルス電流値に制御することは困難
であった噛、・ ′ □（３）・
発明の目的 。Since the output □ of a semiconductor laser has temperature dependence, in order to stabilize the □ output, conventionally the output photocurrent in the backward direction is monitored and the bias current and drive/l are adjusted accordingly.
It controlled the soot flow. However, although it is ideal that the forward and backward optical outputs of a semiconductor laser are the same, they are not necessarily the same, and in addition, the temperature characteristics of the forward output and the backward output photocurrent are not necessarily the same. When the temperature changes, it is difficult to control the bias current value and drive pulse current value to the optimum value at that temperature.
Purpose of the invention.
上記従来の欠点にかんがみ本発明は温度が変化しても半
導体レーザーを最適状態で駆動する半導体レーザー出力
安定化方式を提供することを目的とするものである。In view of the above-mentioned conventional drawbacks, it is an object of the present invention to provide a semiconductor laser output stabilization method that drives a semiconductor laser in an optimal state even when the temperature changes.
（４） 発明の構成
この目的は本発明によれば半導体レーザー駆動回路にお
いて、予め各温度に対する半導体レーをの最適なバイア
ス電流および駆動パルス電流を求めておき、前記半導体
レーザーに温度検出素子を内蔵１〜、該温度検出素子の
出力により前記・ぐイ゛アス電流および駆動／？ルス電
流を温度の最適値に制御することを特徴とする半導体レ
ーザー出力安定化方式を提供することによって達成され
る。(4) Structure of the Invention The object of the present invention is to obtain in advance the optimum bias current and driving pulse current of the semiconductor laser for each temperature in a semiconductor laser drive circuit, and to provide a built-in temperature detection element in the semiconductor laser. 1~, The bias current and drive/? are determined by the output of the temperature detection element. This is accomplished by providing a semiconductor laser output stabilization method that is characterized by controlling the pulse current to an optimal temperature value.
（５）発明の実施例
以下本発明にかかる実施例を図面により詳細に説明する
。(5) Embodiments of the Invention Hereinafter, embodiments of the present invention will be explained in detail with reference to the drawings.
第１図は本発明の実施例のブロック図を示し、同図にお
いて１は半導体レーザー、２け半導体レーザー１の温度
を検出して電気出力に変換する温度検出回路、３は半導
体レーザーのバイアス電流（ｉＢ）温度特性補償回路、
４はその駆動・ｐルス電流（ｊＰ）補償回路、５は半導
体レーザー駆動回路である。FIG. 1 shows a block diagram of an embodiment of the present invention, in which 1 is a semiconductor laser, a temperature detection circuit detects the temperature of the two semiconductor lasers 1 and converts it into an electrical output, and 3 is a bias current of the semiconductor laser. (iB) Temperature characteristic compensation circuit,
Reference numeral 4 designates a drive/p pulse current (jP) compensation circuit, and reference numeral 5 designates a semiconductor laser drive circuit.
第２図は第１図のブロックの詳細な回路の実施例であり
第３図は半導体レーデ−のバイアス電流ｉＢ、！：駆動
パルス電流ｚｐを示す図表である。FIG. 2 shows a detailed circuit example of the block shown in FIG. 1, and FIG. 3 shows the bias current iB, ! of the semiconductor radar. : It is a chart showing drive pulse current zp.
第２図に示すごとく半導体レーザーＩ、 Ｄのモジュー
ルにザー ミスタＴ Ｈを内蔵し一℃半５・ｎ体し−９
２−ＬＤの温度を正しく検出する。、ｆ″の検出出力（
弓演算増幅器ＯＰ１により増幅されろ。ここにおいて第
１図の温度検出回路２はり゛−ミスタＴ 丁（、演算増
幅器ｏｐ１、抵抗Ｒｊ 、 Ｒ２、可変抵抗ＲＶｊによ
って構成される。また第１図のｉＢ温度特性補償回路３
け演算増幅器ＯＰ２および可変抵抗・ＲＶ２により、ｔ
ｐ温度特性補償回路は演算増幅器ＯＰ３および１１■変
抵抗ＲＶ５により形成される。なおトランジスタＱ１お
よび抵抗Ｒ４は半導体１／−ザ〜１のバイアス電流制御
回路を、トランジスタＱ２ 、 Ｑ３および抵抗Ｒ５は
駆動・♀ルス電流制御回路を形成する。As shown in Fig. 2, the semiconductor laser modules I and D have a built-in thermistor TH, and the semiconductor lasers I and D have a built-in laser mister TH, which is heated at 1.5°C and 5.9°C.
2-Detect the temperature of the LD correctly. , f'' detection output (
It is amplified by the bow operational amplifier OP1. Here, the temperature detection circuit 2 shown in FIG.
t by operational amplifier OP2 and variable resistor RV2.
The p-temperature characteristic compensation circuit is formed by an operational amplifier OP3 and an 11-inch variable resistor RV5. Note that the transistor Q1 and the resistor R4 form a bias current control circuit for the semiconductor 1/-the-1, and the transistors Q2, Q3 and the resistor R5 form a drive/flux current control circuit.
第２図のごとく構成された回路において、演算増幅器ｏ
ｐ、の出力により、演算増幅器０１）２では、第３図に
示すバイアス電流ｉ１１を最適制御し、演算増幅器ＯＰ
５では、駆動ノＲルス電流を最適制御する。In the circuit configured as shown in Figure 2, the operational amplifier o
In the operational amplifier 01)2, the bias current i11 shown in FIG. 3 is optimally controlled by the output of the operational amplifier OP.
In step 5, the driving current is optimally controlled.
最適制御の調整は各増幅器ＯＰ１． ＯＦ２ 、 ＯＦ
５の動作をｃｉＪ変抵抗ＲＶｉ 、 ＲＶ２ 、 ＲＶ
３を調整することに１：り行なう。Optimal control adjustments are made for each amplifier OP1. OF2, OF
The operation of ciJ variable resistance RVi, RV2, RV
1: To adjust 3.
（６）発明の効果
（３）
以上詳細に説明したように本発明によｉば半導体ｌ／−
デーを温度変動に対し常に最適な状態で駆動できるので
半導体レーザーの出力温度に対する安定化の効果が犬で
ある。(6) Effects of the invention (3) As explained in detail above, according to the present invention, the semiconductor l/-
Since the semiconductor laser can always be driven in an optimal state against temperature fluctuations, the stabilizing effect on the output temperature of the semiconductor laser is significant.
Ｍ１図は本発明にかかる半導体レーザー出力安定化方式
の１実施例を示すブロック図、第２図は第１図のブロッ
ク図の詳細回路図、第３図は半導体レーザーのバイアス
電流と駆動Ａ’ルス電流を示す図である。
図において１およびＬＤは半導体レーザーを、２１−１
．温度検出回路を、３はバイアス電流温度特性補償回路
を、４は駆動・２ルス電流特性補償回路を、５は半導体
レーザー駆動回路をそれぞれ示す。
（４）
第１０
Ｖ２Fig. M1 is a block diagram showing one embodiment of the semiconductor laser output stabilization method according to the present invention, Fig. 2 is a detailed circuit diagram of the block diagram of Fig. 1, and Fig. 3 shows the bias current and drive A' of the semiconductor laser. FIG. 3 is a diagram showing a leak current. In the figure, 1 and LD are semiconductor lasers, 21-1
．． 3 shows a temperature detection circuit, 3 a bias current temperature characteristic compensation circuit, 4 a drive/2 pulse current characteristic compensation circuit, and 5 a semiconductor laser drive circuit. (4) 10th V2
Claims (1)
□よび駆動パルス電流を求めておき、前記半導体レーデ
−に温度検、出素子を、内蔵１該温度検出素子の出力に
よシ前晶・・イテス電流および駆動ノクルス電流を讐度
の最箒値に制御することを竺徴とする半導体Ｃ−デーｉ
安定化方、式？。The optimum bias recirculation and drive pulse current of the semiconductor for temperature A are determined, and a temperature detection and output element is installed in the semiconductor radar using the output of the built-in temperature detection element. Semiconductor C-day i whose main characteristic is to control the electric current and the driving Noculus current to the optimum values
Stabilization method, formula? .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16486282A JPS5955083A (en) | 1982-09-24 | 1982-09-24 | Semiconductor laser output stabilizing system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16486282A JPS5955083A (en) | 1982-09-24 | 1982-09-24 | Semiconductor laser output stabilizing system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5955083A true JPS5955083A (en) | 1984-03-29 |
Family
ID=15801330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16486282A Pending JPS5955083A (en) | 1982-09-24 | 1982-09-24 | Semiconductor laser output stabilizing system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5955083A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6190123A (en) * | 1984-10-09 | 1986-05-08 | Yokogawa Hokushin Electric Corp | Photoscanning device using hologram |
| EP0220669A2 (en) * | 1985-10-22 | 1987-05-06 | Fujitsu Limited | A semiconductor laser driving device |
| JPS63136585A (en) * | 1986-11-27 | 1988-06-08 | Nippon Telegr & Teleph Corp <Ntt> | Automatic controller for optical output from semiconductor laser |
| JPH0537066A (en) * | 1991-08-01 | 1993-02-12 | Nec Corp | Light repeater |
| US5394419A (en) * | 1991-07-24 | 1995-02-28 | Siemens Aktiengesellschaft | Circuit arrangement for limiting the power of the optical signal emitted by a laser diode |
| US5999551A (en) * | 1998-02-17 | 1999-12-07 | Nec Corporation | Optical transmitter with a temperature-compensating means |
| WO2001020733A1 (en) * | 1999-09-10 | 2001-03-22 | Nikon Corporation | Light source and wavelength stabilization control method, exposure apparatus and exposure method, method for producing exposure apparatus, and device manufacturing method and device |
| JP2007300429A (en) * | 2006-04-28 | 2007-11-15 | Omron Corp | Light emitting element circuit, optical transmission system, optical transmission module, and electronic apparatus |
-
1982
- 1982-09-24 JP JP16486282A patent/JPS5955083A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6190123A (en) * | 1984-10-09 | 1986-05-08 | Yokogawa Hokushin Electric Corp | Photoscanning device using hologram |
| JPH053564B2 (en) * | 1984-10-09 | 1993-01-18 | Yokogawa Electric Corp | |
| EP0220669A2 (en) * | 1985-10-22 | 1987-05-06 | Fujitsu Limited | A semiconductor laser driving device |
| JPS63136585A (en) * | 1986-11-27 | 1988-06-08 | Nippon Telegr & Teleph Corp <Ntt> | Automatic controller for optical output from semiconductor laser |
| US5394419A (en) * | 1991-07-24 | 1995-02-28 | Siemens Aktiengesellschaft | Circuit arrangement for limiting the power of the optical signal emitted by a laser diode |
| JPH0537066A (en) * | 1991-08-01 | 1993-02-12 | Nec Corp | Light repeater |
| US5999551A (en) * | 1998-02-17 | 1999-12-07 | Nec Corporation | Optical transmitter with a temperature-compensating means |
| WO2001020733A1 (en) * | 1999-09-10 | 2001-03-22 | Nikon Corporation | Light source and wavelength stabilization control method, exposure apparatus and exposure method, method for producing exposure apparatus, and device manufacturing method and device |
| US7098992B2 (en) | 1999-09-10 | 2006-08-29 | Nikon Corporation | Light source unit and wavelength stabilizing control method, exposure apparatus and exposure method, method of making exposure apparatus, and device manufacturing method and device |
| JP2007300429A (en) * | 2006-04-28 | 2007-11-15 | Omron Corp | Light emitting element circuit, optical transmission system, optical transmission module, and electronic apparatus |
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