JPH03283585A - Light oscillator - Google Patents
Light oscillatorInfo
- Publication number
- JPH03283585A JPH03283585A JP8409590A JP8409590A JPH03283585A JP H03283585 A JPH03283585 A JP H03283585A JP 8409590 A JP8409590 A JP 8409590A JP 8409590 A JP8409590 A JP 8409590A JP H03283585 A JPH03283585 A JP H03283585A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- semiconductor laser
- temperature
- variation
- voltage drop
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 230000003287 optical effect Effects 0.000 claims abstract description 16
- 238000001816 cooling Methods 0.000 claims abstract description 15
- 230000010355 oscillation Effects 0.000 claims description 10
- 239000013307 optical fiber Substances 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 239000003381 stabilizer Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 230000005679 Peltier effect Effects 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は光フアイバ通信用の送信機等に用いられる光発
振装置に関し、特に広い動作温度範囲を有する冷却型の
光発振装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical oscillation device used in a transmitter for optical fiber communication, and particularly to a cooled optical oscillation device having a wide operating temperature range.
従来、この種の光発振装置における半導体レーザモジュ
ールは、第3図に示す如く、半導体レーザ1からの出射
光をレンズ2によって集光して光ファイバ3に結合する
光学系と、半導体レーザ1の温度を抵抗値の変化に置き
換えて検出するサーミスタ4と、半導体レーザ1を冷却
するためにペルチェ効果を利用する電子冷却素子6とで
構成される。フォトダイオード5は、半導体レーザ1の
後方出力光を電流に変換し、半導体レーザ1の出力をモ
ニタするために設けられる(文献:仲用他「周波数応答
に優れた冷却素子内fiLDモジーール」昭和63年度
電子情報通信学会全国大会 C−450,P・1−15
5.1988.3)。Conventionally, as shown in FIG. 3, a semiconductor laser module in this type of optical oscillation device has an optical system that condenses the emitted light from the semiconductor laser 1 using a lens 2 and couples it to an optical fiber 3, and a semiconductor laser module that uses the semiconductor laser 1. It is composed of a thermistor 4 that detects temperature by replacing it with a change in resistance value, and an electronic cooling element 6 that uses the Peltier effect to cool the semiconductor laser 1. The photodiode 5 is provided to convert the rear output light of the semiconductor laser 1 into a current and monitor the output of the semiconductor laser 1 (Reference: Nakayo et al. "FiLD module in a cooling element with excellent frequency response", 1982). IEICE National Conference C-450, P.1-15
5.1988.3).
上述した従来の光発振装置は、半導体レーザモジュール
内で温度検出を行うサーミスタ4と半導体レーザ1とが
離れた位置に設置されているため、両者の間の熱伝導に
要する時定数が大きい。そのため、サーミスタ4の抵抗
値変化を検出して電子冷却素子6の駆動電流を変化させ
るような帰還回路を設けても、熱的な時定数が大きいと
急激な温度変化には追従できず、半導体レーザ1の温度
が上昇して動作不安定になる欠点があった。In the conventional optical oscillation device described above, the thermistor 4 that detects temperature within the semiconductor laser module and the semiconductor laser 1 are installed at a separate position, so the time constant required for heat conduction between the two is large. Therefore, even if a feedback circuit is provided to detect a change in the resistance value of the thermistor 4 and change the drive current of the thermoelectric cooling element 6, if the thermal time constant is large, it will not be able to follow sudden temperature changes, and the semiconductor There was a drawback that the temperature of the laser 1 rose and the operation became unstable.
本発明の光発振装置は、半導体レーザと、この半導体レ
ーザの出射光を光ファイバに結合するための光学系と、
前記半導体レーザを冷却するための電子冷却素子とを備
えた半導体レーザモジュールを具備した光発振装置にお
いて、前記半導体レーザの順方向直流電圧降下の変化量
を検出する検出手段と、この検出手段の検出結果に基づ
いて前記電子冷却素子を制御する制御手段とを含んでい
る。The optical oscillation device of the present invention includes a semiconductor laser, an optical system for coupling emitted light from the semiconductor laser to an optical fiber,
In an optical oscillation device equipped with a semiconductor laser module including an electronic cooling element for cooling the semiconductor laser, a detection means for detecting the amount of change in forward DC voltage drop of the semiconductor laser, and a detection means for detecting the amount of change in the forward DC voltage drop of the semiconductor laser. and control means for controlling the electronic cooling element based on the result.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は本発明の一実施例のブロック図、第2図は第1
図における半導体レーザモジュール10の正面図である
。FIG. 1 is a block diagram of one embodiment of the present invention, and FIG. 2 is a block diagram of an embodiment of the present invention.
It is a front view of the semiconductor laser module 10 in a figure.
第2図に示すように、半導体レーザモジュール10の半
導体レーザ1からの出射光はレンズ2によシ集光されて
光ファイバ3に結合される。半導体レーザ1を冷却する
ための電子冷却素子6とレンズ2とが半導体レーザ1を
固定する基板に取9つけられている。半導体レーザ1の
順方向端子電圧は温度が上昇すると低下する傾向を示す
。この特性を利用すれば、半導体レーザ1の端子電圧変
化量で温度変化がわかる。As shown in FIG. 2, the light emitted from the semiconductor laser 1 of the semiconductor laser module 10 is focused by a lens 2 and coupled to an optical fiber 3. As shown in FIG. An electronic cooling element 6 and a lens 2 for cooling the semiconductor laser 1 are attached to a substrate to which the semiconductor laser 1 is fixed. The forward terminal voltage of the semiconductor laser 1 tends to decrease as the temperature increases. By utilizing this characteristic, the temperature change can be determined by the amount of change in the terminal voltage of the semiconductor laser 1.
第1図を参照すると、半導体レーザモジュール10には
半導体レーザ1の端子11,12と、モニタ用のフォト
ダイオード5と、フォトダイオード5の端子13.14
とが設けである。光ファイバ3は、半導体レーザモジュ
ール10の出力光を取り出す。変調回路15は、変調用
のパルス電流を半導体レーザ1に加える。同時に、光出
力安定化回路16は、フォトダイオード5の光電流室化
に応じて半導体レーザlの直流バイアス電流を制御し、
半導体レーザ1の出力光パワーの平均値を一定に保つ。Referring to FIG. 1, the semiconductor laser module 10 includes terminals 11 and 12 of the semiconductor laser 1, a photodiode 5 for monitoring, and terminals 13 and 14 of the photodiode 5.
This is the provision. The optical fiber 3 takes out the output light of the semiconductor laser module 10. The modulation circuit 15 applies a modulation pulse current to the semiconductor laser 1. At the same time, the optical output stabilization circuit 16 controls the DC bias current of the semiconductor laser l according to the photocurrent chamber of the photodiode 5,
The average value of the output optical power of the semiconductor laser 1 is kept constant.
さらに、温度制御回路17は、半導体レーザ1の順方向
直流電圧降下の変化を検出する回路(例えば積分回路)
を有し、検出した変化量を半導体レーザ1の温度変化量
に対応させて電子冷却素子6に流す直流電流値を調整し
、半導体レーザ1の温度を一定に保つ。Furthermore, the temperature control circuit 17 is a circuit (for example, an integrating circuit) that detects a change in the forward DC voltage drop of the semiconductor laser 1.
The detected amount of change corresponds to the amount of temperature change of the semiconductor laser 1, and the value of the DC current flowing through the electronic cooling element 6 is adjusted to keep the temperature of the semiconductor laser 1 constant.
以上説明したように1本発明による光発振装置は、半導
体レーザの温度変化を半導体レーザ自身の端子電圧変化
量から検出するため、迅速で正確な温度検出が可能であ
る。従って、半導体レーザを冷却するための温度制御回
路の追従性が高められ、半導体レーザが一時的に高温動
作を強いられることはない。すなわち、半導体レーザの
動作不安定が回避できると言う効果がある。As explained above, the optical oscillation device according to the present invention detects the temperature change of the semiconductor laser from the amount of change in the terminal voltage of the semiconductor laser itself, so that it is possible to quickly and accurately detect the temperature. Therefore, the followability of the temperature control circuit for cooling the semiconductor laser is improved, and the semiconductor laser is not forced to operate at a high temperature temporarily. That is, there is an effect that unstable operation of the semiconductor laser can be avoided.
第1図は本発明の一実施例を示すブロック図、第2図は
第1図における半導体レーザモジュール10の正面図、
第3図は従来の光発振装置の一例における半導体レーザ
モジュールの正面図である。
1・・・半導体レーザ、2・・・レンズ、3・・・光フ
ァイバ、4・・・サーミスタ、5・・・フォトダイオー
ド、6・・・電子冷却素子、10・・・半導体レーザモ
ジュール、11.12・・・半導体レーザの端子、13
.14・・・フォトダイオード5の端子、15・・・変
調回路、16・・・光出力安定化回路、17・・・温度
制御回路。FIG. 1 is a block diagram showing one embodiment of the present invention, FIG. 2 is a front view of the semiconductor laser module 10 in FIG. 1,
FIG. 3 is a front view of a semiconductor laser module in an example of a conventional optical oscillation device. DESCRIPTION OF SYMBOLS 1... Semiconductor laser, 2... Lens, 3... Optical fiber, 4... Thermistor, 5... Photodiode, 6... Electronic cooling element, 10... Semiconductor laser module, 11 .12...Terminal of semiconductor laser, 13
.. 14... Terminal of photodiode 5, 15... Modulation circuit, 16... Optical output stabilization circuit, 17... Temperature control circuit.
Claims (1)
バに結合するための光学系と、前記半導体レーザを冷却
するための電子冷却素子とを備えた半導体レーザモジュ
ールを具備した光発振装置において、前記半導体レーザ
の順方向直流電圧降下の変化量を検出する検出手段と、
この検出手段の検出結果に基づいて前記電子冷却素子を
制御する制御手段とを含むことを特徴とする光発振装置
。An optical oscillation device comprising a semiconductor laser module including a semiconductor laser, an optical system for coupling emitted light from the semiconductor laser to an optical fiber, and an electronic cooling element for cooling the semiconductor laser. a detection means for detecting the amount of change in the forward DC voltage drop of the laser;
A light oscillation device comprising: a control means for controlling the electronic cooling element based on a detection result of the detection means.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8409590A JPH03283585A (en) | 1990-03-30 | 1990-03-30 | Light oscillator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8409590A JPH03283585A (en) | 1990-03-30 | 1990-03-30 | Light oscillator |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03283585A true JPH03283585A (en) | 1991-12-13 |
Family
ID=13820958
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8409590A Pending JPH03283585A (en) | 1990-03-30 | 1990-03-30 | Light oscillator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03283585A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05190985A (en) * | 1992-01-14 | 1993-07-30 | Fujitsu Ltd | Optical semiconductor module |
EP2040344A3 (en) * | 2007-09-18 | 2010-12-29 | OSRAM Opto Semiconductors GmbH | Switching device for operating a pulse laser diode and method for operating a pulse laser diode |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6222494A (en) * | 1985-07-22 | 1987-01-30 | Yokogawa Electric Corp | Stabilizing device for semiconductor laser |
JPS6410684A (en) * | 1987-07-03 | 1989-01-13 | Nec Corp | Optical transmitter |
JPH0198282A (en) * | 1987-10-12 | 1989-04-17 | Sony Corp | Semiconductor laser device |
JPH01298780A (en) * | 1988-05-27 | 1989-12-01 | Hitachi Electron Eng Co Ltd | Temperature stabilization of semiconductor laser element and device therefor |
JPH0290581A (en) * | 1988-09-28 | 1990-03-30 | Hitachi Ltd | Optical transmitter |
JPH03268374A (en) * | 1990-03-16 | 1991-11-29 | Sanyo Electric Co Ltd | Temperature regulation of semiconductor laser |
-
1990
- 1990-03-30 JP JP8409590A patent/JPH03283585A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6222494A (en) * | 1985-07-22 | 1987-01-30 | Yokogawa Electric Corp | Stabilizing device for semiconductor laser |
JPS6410684A (en) * | 1987-07-03 | 1989-01-13 | Nec Corp | Optical transmitter |
JPH0198282A (en) * | 1987-10-12 | 1989-04-17 | Sony Corp | Semiconductor laser device |
JPH01298780A (en) * | 1988-05-27 | 1989-12-01 | Hitachi Electron Eng Co Ltd | Temperature stabilization of semiconductor laser element and device therefor |
JPH0290581A (en) * | 1988-09-28 | 1990-03-30 | Hitachi Ltd | Optical transmitter |
JPH03268374A (en) * | 1990-03-16 | 1991-11-29 | Sanyo Electric Co Ltd | Temperature regulation of semiconductor laser |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05190985A (en) * | 1992-01-14 | 1993-07-30 | Fujitsu Ltd | Optical semiconductor module |
EP2040344A3 (en) * | 2007-09-18 | 2010-12-29 | OSRAM Opto Semiconductors GmbH | Switching device for operating a pulse laser diode and method for operating a pulse laser diode |
US8094694B2 (en) | 2007-09-18 | 2012-01-10 | Osram Opto Semiconductors Gmbh | Operating a pulse laser diode |
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