JPS5934684A - Stabilization circuit for characteristic of semiconductor laser diode - Google Patents

Stabilization circuit for characteristic of semiconductor laser diode

Info

Publication number
JPS5934684A
JPS5934684A JP14512982A JP14512982A JPS5934684A JP S5934684 A JPS5934684 A JP S5934684A JP 14512982 A JP14512982 A JP 14512982A JP 14512982 A JP14512982 A JP 14512982A JP S5934684 A JPS5934684 A JP S5934684A
Authority
JP
Japan
Prior art keywords
laser diode
output
temperature
laser
error amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14512982A
Other languages
Japanese (ja)
Inventor
Hideo Yamaguchi
秀夫 山口
Takahiro Asai
孝弘 浅井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP14512982A priority Critical patent/JPS5934684A/en
Publication of JPS5934684A publication Critical patent/JPS5934684A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/0683Stabilisation of laser output parameters by monitoring the optical output parameters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/0683Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/06837Stabilising otherwise than by an applied electric field or current, e.g. by controlling the temperature

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To form a stabilization circuit for characteristics of a semiconductor laser diode with a simple structure by a method wherein the difference between the voltage which is proportional to a photo-current converted by a photo diode and the reference voltage is amplified, and the conduction current to an electron cooler which cools a laser vessel, and the laser bias current of the laser diode are controlled. CONSTITUTION:In a stabilization circuit for characteristic of a semiconductor laser diode, a conventional thermo-sensitive element is omitted so that an output of an error amplifier 7 is applied to a temperature controller 13 as the temperature measurements of a laser vessel 3. Since the bias current values I1, I2, and I3 for holding a light output at a constant value Lout correspond respectively to temperature T1, T2, and T3, the bias current values correspond to the laser diode 1, that is, the temperature measurements of the laser vessel 3. Meanwhile, since these bias current values are determined with the output of the error amplifier 7, as shown in the figure, inputting of the output of the error amplifier 7 to the temperature controller 3 is equivalent to applying the output of the conventional thermo-sensitive element.

Description

【発明の詳細な説明】 本発明は半導体レーザダイオードの特性安定化回路に係
り、特に簡単な構成とするのに好適な特性安定化回路に
関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a characteristic stabilizing circuit for a semiconductor laser diode, and particularly to a characteristic stabilizing circuit suitable for a simple configuration.

第1図は半導体レーザダイオード(以下単にレーザダイ
オードという。)の駆動電流工と発光出力Loutとの
関係を示す線図である。第1図に示すように、■−Lo
ut特性は、周囲温度がT□。
FIG. 1 is a diagram showing the relationship between the driving current of a semiconductor laser diode (hereinafter simply referred to as a laser diode) and the light emission output Lout. As shown in Figure 1, ■-Lo
The ut characteristic is that the ambient temperature is T□.

T2+ T8と上昇すると、曲線a、b、cのように図
の右側に大きく移動する。すなわち、周囲温度が高くな
ると、それに対応して発光出力Loutを一定値に保つ
ためには、駆動電流工を■1+工2.■3と増やしてや
らなければならない。
When the temperature rises from T2+T8, it moves greatly to the right side of the diagram as shown by curves a, b, and c. That is, as the ambient temperature rises, in order to keep the light emitting output Lout at a constant value in response to the increase, the drive current must be adjusted as follows: (1) + (2). ■We have to increase it to 3.

また、発光出力を安定化する他の方法として、レーザダ
イオード自体の温度を安定化する方法があシ、さらに、
これらの方法を併用することも考えられている。
Another method for stabilizing the light output is to stabilize the temperature of the laser diode itself.
It is also being considered to use these methods in combination.

第2図はそれの従来回路の回路図である。FIG. 2 is a circuit diagram of the conventional circuit.

次に、第2図の回路の動作について説明する。Next, the operation of the circuit shown in FIG. 2 will be explained.

1はレーザダイオードで、レーザダイオード1はホトダ
イオード2とともに小さな金属製のレーザ容器3内に収
容してあり、その発光出力のうち前面光は光ファイバ4
に入射させてあり、後方光は直接ホトダイオード2に入
射させ、ホトダイオード2で平均発光出力に比例した電
流に変換し、その電流により抵抗器4とコンデンサ5の
両端に生ずる電圧と基準電圧6とを誤差増幅器7で比較
して、さらにその差を誤差増幅器7で増幅する。なお、
抵抗器4はホトダイオード2の光電流を電圧に変換する
ものであQ1コンデンサ5はその平均値を検出するもの
である。誤差増幅器7の出力は電流増幅器8、レーザ駆
動抵抗器9を介してレーザダイオード1を駆動する。こ
のように、誤差増幅器7は、光出力が設定値より太き過
ぎるときは、レーザバイアス電流を減らすように、また
、小さ過ぎるときは、レーザバイアス電流を増やすよう
にその出力電圧を調整する。なお、レーザダイオード1
に対して普通抵抗とコンデンサとよりなる結合回路10
を介して信号11が印加されておシ、この信号11が直
流成分を持たないときの平均光出力は信号11を印加し
ない場合の光出力に等しい。
1 is a laser diode, and the laser diode 1 is housed together with a photodiode 2 in a small metal laser container 3, and the front light of its light output is transmitted through an optical fiber 4.
The rear light is directly incident on the photodiode 2, and the photodiode 2 converts it into a current proportional to the average light emission output, and the voltage generated across the resistor 4 and capacitor 5 and the reference voltage 6 are The difference is compared by the error amplifier 7, and the difference is further amplified by the error amplifier 7. In addition,
The resistor 4 is for converting the photocurrent of the photodiode 2 into a voltage, and the Q1 capacitor 5 is for detecting the average value. The output of the error amplifier 7 drives the laser diode 1 via a current amplifier 8 and a laser drive resistor 9. In this manner, the error amplifier 7 adjusts its output voltage to reduce the laser bias current when the optical output is too thick than the set value, and to increase the laser bias current when it is too small. In addition, laser diode 1
A coupling circuit 10 consisting of an ordinary resistor and a capacitor for
A signal 11 is applied through the oscillator, and the average optical output when this signal 11 has no DC component is equal to the optical output when the signal 11 is not applied.

レーザダイオード1とホトトランジスタ2とを収容する
レーザ容器乙には、その温度検出用の感温素子(例えば
サーミスタ)12が取シ付けてあシ、その出力を温度調
整器16が受けて、これによって温度調整器16は電子
冷却デバイス(例えばペルテイエ素子)14の通電電流
を加減してレーザ容器乙の温度を所定の温度に保持して
、温度の安定化をはかつている。
A temperature sensing element (for example, a thermistor) 12 for detecting the temperature is attached to the laser container B that houses the laser diode 1 and the phototransistor 2, and the output thereof is received by a temperature regulator 16. Accordingly, the temperature regulator 16 adjusts the current flowing through the electronic cooling device (for example, a Peltier element) 14 to maintain the temperature of the laser container B at a predetermined temperature, thereby stabilizing the temperature.

以上のようにして、レーザダイオードづの温度安定化お
よび光出力の安定化をはかシ、安定で信頼性が高いレー
ザ動作を確保している。
In the manner described above, the temperature of the laser diode is stabilized and the optical output is stabilized, thereby ensuring stable and highly reliable laser operation.

しかし、第1図によれば、1つのレーザダイオ−トラに
対して光出力と温度の2つのセンサ(ホトダイオード2
と感温素子12)が必要であり、しかも、レーザ容器6
は一般に小形であシ、感温素子12を取シ付けるのが面
倒である。さらに感温素子12としては、温度特性が十
分安定で信頼性が高いものを用いなければならないが、
現実にはそれが困難であるなどの問題がある。
However, according to FIG. 1, two sensors for optical output and temperature (two photodiodes and two
and temperature sensing element 12) are required, and the laser container 6
are generally small in size, and it is troublesome to attach the temperature sensing element 12 thereto. Furthermore, as the temperature sensing element 12, one must be used that has sufficiently stable temperature characteristics and is highly reliable.
In reality, there are problems such as the difficulty of doing so.

本発明は上記に鑑みてなされたもので、その目的とする
ところは、簡単な構成とすることができる半導体レーザ
ダイオードの特性安定化回路を提供することにある。
The present invention has been made in view of the above, and an object of the present invention is to provide a characteristic stabilization circuit for a semiconductor laser diode that can have a simple configuration.

本発明の特徴は、半導体レーザダイオードからの発光出
力のうちの後方光を受けて光出力平均値に比例した光電
流に変換するホトダイオードと、上記光電流に比例しだ
電圧と基準電圧との差を増幅する誤差増幅器と、この誤
差増幅器の出力を上記レーザダイオードを収納しだレー
ザ容器の温度計測値として入力して上記レーザ容器を冷
却する電子冷却装置への通電電流を制御する温度調整器
と、上記誤差増幅器の出力を増幅して上記レーザダイオ
ードのレーザバイアス電流を制御する電流増幅器とよシ
構成した点にある。
The present invention is characterized by a photodiode that receives backward light of the light output from a semiconductor laser diode and converts it into a photocurrent proportional to the average value of the optical output, and a difference between a voltage proportional to the photocurrent and a reference voltage. an error amplifier that amplifies the output of the laser diode, and a temperature regulator that inputs the output of the error amplifier as a temperature measurement value of the laser container housing the laser diode and controls the current flowing to the electronic cooling device that cools the laser container. , and a current amplifier that amplifies the output of the error amplifier to control the laser bias current of the laser diode.

以下本発明を第3図に示した実施例を用いて詳細に説明
する。
The present invention will be explained in detail below using the embodiment shown in FIG.

第6図は本発明のレーザダイオードの特性安定化回路の
一実施例を示す回路図で、第2図と同一部分は同じ符号
で示し、ここでは説明を省略する。
FIG. 6 is a circuit diagram showing an embodiment of the characteristic stabilizing circuit for a laser diode according to the present invention. The same parts as in FIG. 2 are denoted by the same reference numerals, and the explanation thereof will be omitted here.

第6図と第2図との相違点は、誤差増幅器7の出力をレ
ーザ容器乙の温度計測値として温度調整器16に与える
ようにし、第2図の感温素子12を省略した点にある。
The difference between FIG. 6 and FIG. 2 is that the output of the error amplifier 7 is given to the temperature regulator 16 as the temperature measurement value of the laser container B, and the temperature sensing element 12 in FIG. 2 is omitted. .

その他は第2図と同様である。Other details are the same as in FIG. 2.

第1図かられかるように、光出力を一定値Loutに保
つためのバイアス電流値工□* ■’2* TBはそれ
ぞれ温度T□+ T2+ TBに対応するから、バイア
ス電流値は、レーザダイオード1、すなわち、レーザ容
器乙の温度計測値に対応する。ところで、このバイアス
電流値を決めているのは、誤差増幅器7の出力であるか
ら、第6図に示すように、誤差増幅器7の出力を温度調
整器16に入力するようにすれば、第2図の感温素子1
2の出力を与えたのと等価となる。
As can be seen from Fig. 1, the bias current value for maintaining the optical output at a constant value Lout □* ■'2* TB corresponds to the temperature T□ + T2+ TB, so the bias current value is 1, that is, corresponds to the temperature measurement value of laser container B. By the way, this bias current value is determined by the output of the error amplifier 7, so if the output of the error amplifier 7 is inputted to the temperature regulator 16 as shown in FIG. Temperature sensing element 1 in the figure
This is equivalent to giving an output of 2.

したがって、第6図に示す実施例によれば、感温素子1
2を設けなくとも、第2図と同様に動作し、構成を簡単
にすることができる。しかも、レーザダイオード1の光
出力から温度を検知するようにしているから、レーザダ
イオード1の温度安定化精度を向上することができる。
Therefore, according to the embodiment shown in FIG.
Even if 2 is not provided, the operation can be performed in the same manner as in FIG. 2, and the configuration can be simplified. Moreover, since the temperature is detected from the optical output of the laser diode 1, the temperature stabilization accuracy of the laser diode 1 can be improved.

以上説明したように、本発明によれば、簡単な構成のも
のとすることができ、かつ、半導体レーザダイオードの
温度安定化をさらに向上することができるという効果が
ある。
As explained above, according to the present invention, it is possible to have a simple structure, and the temperature stabilization of the semiconductor laser diode can be further improved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はレーザダイオードの駆動電流と発光出力との関
係線図、第2図は従来のレーザダイオードの特性安定化
回路の回路図、第6図は本発明のレーザダイオードの特
性安定化回路の一実施例を示す回路図である。 1:レーザダイオード、2:ホトダイオード、6:レー
ザ容器、4:抵抗器、5:コンデンサ、6:基準電圧、
7:誤差増幅器、8:電流増幅器、13二温度調整器、
14:電子冷却デ・(イス。 犀 II2]
Figure 1 is a diagram showing the relationship between laser diode drive current and light emitting output, Figure 2 is a circuit diagram of a conventional laser diode characteristic stabilization circuit, and Figure 6 is a diagram of the laser diode characteristic stabilization circuit of the present invention. FIG. 2 is a circuit diagram showing an example. 1: Laser diode, 2: Photodiode, 6: Laser container, 4: Resistor, 5: Capacitor, 6: Reference voltage,
7: error amplifier, 8: current amplifier, 13 two temperature regulators,
14:Electronic cooling de-(chair. Sai II2)

Claims (1)

【特許請求の範囲】[Claims] 1、 半導体レーザダイオードを収納しだレーザ容器内
の温度を所定温度に保持するとともに前記レーザダイオ
ードの光出力を安定化する特性安定化回路において、前
記半導体レーザダイオードからの発光出力のうちの後方
光を受けて光出力平均値に比例した光電流に変換するホ
トダイオードと、前記光電流に比例しだ電圧と基準電圧
との差を増幅する誤差増幅器と、該誤差増幅器の出力を
前記レーザ容器の温度計測値として人力して前記レーザ
容器を冷却する電子冷却装置への通電電流を制御する温
度調整器と、前記誤差増幅器の出力を増幅して前記レー
ザダイオードのレーザバイアス電流を制御する電流増幅
器とよりなることを特徴とする半導体レーザダイオード
の特性安定化回路。
1. In a characteristic stabilization circuit that maintains the temperature inside a laser container housing a semiconductor laser diode at a predetermined temperature and stabilizes the optical output of the laser diode, the backward light of the light output from the semiconductor laser diode is an error amplifier that amplifies the difference between a voltage proportional to the photocurrent and a reference voltage; A temperature regulator that uses a measured value to manually control the current flowing to the electronic cooling device that cools the laser container, and a current amplifier that amplifies the output of the error amplifier to control the laser bias current of the laser diode. A circuit for stabilizing the characteristics of a semiconductor laser diode.
JP14512982A 1982-08-20 1982-08-20 Stabilization circuit for characteristic of semiconductor laser diode Pending JPS5934684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14512982A JPS5934684A (en) 1982-08-20 1982-08-20 Stabilization circuit for characteristic of semiconductor laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14512982A JPS5934684A (en) 1982-08-20 1982-08-20 Stabilization circuit for characteristic of semiconductor laser diode

Publications (1)

Publication Number Publication Date
JPS5934684A true JPS5934684A (en) 1984-02-25

Family

ID=15378070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14512982A Pending JPS5934684A (en) 1982-08-20 1982-08-20 Stabilization circuit for characteristic of semiconductor laser diode

Country Status (1)

Country Link
JP (1) JPS5934684A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60186078A (en) * 1984-03-05 1985-09-21 Nippon Telegr & Teleph Corp <Ntt> Measuring device for semiconductor laser characteristic
JPS60229541A (en) * 1984-04-27 1985-11-14 Matsushita Electric Ind Co Ltd Optical transmitter
JPS63255983A (en) * 1987-04-13 1988-10-24 Nec Corp Optical transmitter
US5023431A (en) * 1989-08-11 1991-06-11 Massachusetts Institute Of Technology Linearized thermal feedback circuit and temperature controller circuit utilizing the same
EP0618653A2 (en) * 1993-03-30 1994-10-05 Nec Corporation Frequency stabilization method of semiconductor laser, frequency-stabilized light source and laser module

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60186078A (en) * 1984-03-05 1985-09-21 Nippon Telegr & Teleph Corp <Ntt> Measuring device for semiconductor laser characteristic
JPS60229541A (en) * 1984-04-27 1985-11-14 Matsushita Electric Ind Co Ltd Optical transmitter
JPS63255983A (en) * 1987-04-13 1988-10-24 Nec Corp Optical transmitter
US5023431A (en) * 1989-08-11 1991-06-11 Massachusetts Institute Of Technology Linearized thermal feedback circuit and temperature controller circuit utilizing the same
EP0618653A2 (en) * 1993-03-30 1994-10-05 Nec Corporation Frequency stabilization method of semiconductor laser, frequency-stabilized light source and laser module
EP0618653A3 (en) * 1993-03-30 1995-04-12 Nippon Electric Co Frequency stabilization method of semiconductor laser, frequency-stabilized light source and laser module.

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