JPS62282474A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS62282474A JPS62282474A JP12546986A JP12546986A JPS62282474A JP S62282474 A JPS62282474 A JP S62282474A JP 12546986 A JP12546986 A JP 12546986A JP 12546986 A JP12546986 A JP 12546986A JP S62282474 A JPS62282474 A JP S62282474A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- output
- laser element
- laser device
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- 230000003287 optical effect Effects 0.000 claims abstract description 12
- 230000002269 spontaneous effect Effects 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 7
- 230000010355 oscillation Effects 0.000 abstract description 17
- 230000003321 amplification Effects 0.000 abstract description 5
- 238000001514 detection method Methods 0.000 abstract description 5
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 3
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
Abstract
Description
【発明の詳細な説明】 １発明の詳細な説明 （産業上の利用分野） 本発明は半導体レーザ装置の改良に関する。[Detailed description of the invention] 1. Detailed description of the invention (Industrial application field) The present invention relates to improvements in semiconductor laser devices.
（従来の技術とその問題点）
半導体レーザ素子は、高い光出力とともに小型・軽量と
いった特徴をもつから、光通信や光情報処理の分野にお
いて広く実用に供されている。半導体レーザ素子は、発
振光出力を得る為の駆動電流にしぎい値をもち、特に光
通信に用いる場合は、そのしきい値近傍に直流バイアス
電流を印加する必要がある。半導体レーザ素子のしきい
値は、素子毎に大きく異なり、また使用する温度条件等
によっても大きく変化する。従って、実際の半導体レー
ザ装置では、半導体レーザ素子の変調光出力の平均値を
半導体レーザ素子の光出射面とは反対側（置かれたモニ
ター受光素子で検出し、その変調光出力平均値と半導体
レーザ素子の駆動パルスのマーク率とを比較器で比較し
、この比較器の出力（対応した直流バイアス電流を半導
体レーザ素子）で印加して、変調光出力を常に一定にす
る方式が広く用いられている。半導体レーザ素子とモニ
ター受光素子とは、各々一つのステム内（実装する必要
があるが、それらの配置、光軸合わせや組立てゼンディ
ング工程を簡単にする為には、半導体レーザ素子とモニ
ター受光素子のモノリシラ゛り複合集積化が不可欠であ
り、開発がすすめられている。しかしながら例えば、廿
日等により「昭和６０年度電子通信学会総合全国大会予
稿９３１」に発表された論文に示された次のような問題
点がある。一般に光通信において広く用いられる工ｎＰ
／ＩｎＧａＡｓＰ系半導体を材料とした半導体レーザ素
子とモニター受光素子とをモノリシック集積化した複合
素子罠おいては、それらの素子の基板となるＩｎＰ基板
が、半導体レーザ素子の発振波長に対して透明であるか
ら、半導体レーザ素子が発光する自然放出光成分が基板
を通して直接モニター受光素子（入射してしまう。そこ
で、従来方式の半導体レーザ装置では正確な半導体レー
ザ素子のレーザ発振出力を検出できず、特に、半導体レ
ーザ素子の変調パルス信号のマーク率が変動する場合は
、半導体レーザ素子のバイアス電流値の設定に大きな誤
差を生じていた。従来装置にはこのような欠点があった
。(Prior Art and its Problems) Semiconductor laser elements have the characteristics of high optical output, small size, and light weight, and are therefore widely used in the fields of optical communications and optical information processing. Semiconductor laser elements have a threshold value for driving current to obtain oscillation light output, and when used particularly for optical communication, it is necessary to apply a DC bias current near the threshold value. The threshold value of a semiconductor laser device varies greatly from device to device, and also varies greatly depending on the temperature conditions and the like in which it is used. Therefore, in an actual semiconductor laser device, the average value of the modulated light output of the semiconductor laser element is detected by a monitor light receiving element placed on the side opposite to the light emitting surface of the semiconductor laser element, and the average value of the modulated light output and the semiconductor laser element are detected. A widely used method is to compare the mark rate of the driving pulse of the laser element with the mark rate using a comparator, and apply the output of this comparator (corresponding DC bias current to the semiconductor laser element) to keep the modulated light output constant. The semiconductor laser element and the monitor light receiving element each need to be mounted within one stem, but in order to simplify their arrangement, optical axis alignment, and assembly/shending process, it is necessary to Monolithic and composite integration of monitor light-receiving elements is indispensable, and development is progressing. There are also the following problems.
In a composite device trap in which a semiconductor laser device and a monitor light receiving device made of an InGaAsP semiconductor are monolithically integrated, the InP substrate that serves as the substrate for these devices is transparent to the oscillation wavelength of the semiconductor laser device. Therefore, the spontaneous emission light component emitted by the semiconductor laser element enters the monitor light receiving element directly through the substrate.Therefore, conventional semiconductor laser devices cannot accurately detect the laser oscillation output of the semiconductor laser element. When the mark rate of the modulated pulse signal of the semiconductor laser device fluctuates, a large error occurs in setting the bias current value of the semiconductor laser device.The conventional device has such a drawback.
そこで、本発明の目的は、上述の欠点を除去し、半導体
レーザ素子のバイアス電流値を正確に自動的に設定でき
る簡易な半導体レーザ装置を提供するととくある。SUMMARY OF THE INVENTION An object of the present invention is to eliminate the above-mentioned drawbacks and to provide a simple semiconductor laser device that can accurately and automatically set the bias current value of a semiconductor laser element.
（問題点を解決するための手段）
本発明により得られる半導体レーザ装置は、半導体レー
ザ素子と、前記半導体レーザ素子の光出力を検出する第
一の毛二ター受光素子と、前記半導体レーザ素子の自然
放出光成分を検出する第二のモニター受光素子とが半導
体基板上（集積されてなる複合半導体レーザ素子と；前
記第一のモニター受光素子の出力と前記第二のモニター
受光素子の出力との差から前記半導体レーザ素子の出力
を検出し、前記半導体レーザ素子に印加されるパルス信
号のマーク率と前記半導体レーザ素子出力との差に対応
して前記半導体レーザ素子にバイアス電流を印加する半
導体レーザ素子パノアス回路とから成ることを特徴とす
る。(Means for Solving the Problems) A semiconductor laser device obtained by the present invention includes a semiconductor laser element, a first hair-receiving element for detecting the optical output of the semiconductor laser element, and a semiconductor laser element for detecting the optical output of the semiconductor laser element. A second monitor light-receiving element for detecting the spontaneous emission light component is integrated on a semiconductor substrate (a composite semiconductor laser element formed by integrating the output of the first monitor light-receiving element and the output of the second monitor light-receiving element). A semiconductor laser that detects the output of the semiconductor laser element based on the difference, and applies a bias current to the semiconductor laser element in accordance with the difference between the mark rate of a pulse signal applied to the semiconductor laser element and the output of the semiconductor laser element. It is characterized by consisting of an element panoas circuit.
（作用）
半導体レーザ素子とモノリシック罠集積されたモニター
受光素子は、半導体レーザ素子のレーザ発振光の入射光
量が最大となるように配置されているが、例えばＩｎＰ
を基板として構成した場合は基板が透明であるから、不
要な自然放出光成分も多くモニター受光素子に入射して
しまう。本発明においては、本来のレーザ発振光出力を
モニターする為の第一のモニター受光素子とは別に１第
一のモニター受光素子とほぼ等しい受光面積の第二のモ
ニター受光素子を、レーザ発振光出力が入射しない位置
（配置する。第二〇そニター受光素子では半導体レーザ
素子からの自然放出光成分のみを検出し、その強度は、
第一のモニター受光素チの出力の自然放出光成分と等し
い。従って第一のモニター受光素子の出力と第二のモニ
ター受光素子の出力の差を検出すればレーザ発振光出力
が正確に得られ、半導体レーザ素子に印加される変調パ
ルス信号のマーク率と比較しても誤差を生じることなく
半導体レーザ素子のバイアス電流値を設定することが可
能となる。(Function) The monitor light receiving element monolithically integrated with the semiconductor laser element is arranged so that the incident light amount of the laser oscillation light of the semiconductor laser element is maximized.
When configured as a substrate, since the substrate is transparent, many unnecessary spontaneously emitted light components also enter the monitor light-receiving element. In the present invention, in addition to the first monitor light receiving element for monitoring the original laser oscillation light output, a second monitor light receiving element having a light receiving area approximately equal to that of the first monitor light receiving element is used to output the laser oscillation light output. The 20th sensor photodetector detects only the spontaneous emission light component from the semiconductor laser element, and its intensity is
It is equal to the spontaneous emission light component of the output of the first monitor light receiving element. Therefore, by detecting the difference between the output of the first monitor light-receiving element and the output of the second monitor light-receiving element, the laser oscillation light output can be accurately obtained and compared with the mark rate of the modulated pulse signal applied to the semiconductor laser element. It becomes possible to set the bias current value of the semiconductor laser element without causing an error even if
（実施例）
第１図は本発明の一実施例を示す図である。本実施例は
、複合半導体レーザ素子１と、半導体レーザバイアス回
路２と、パルス増幅回路３と、入力端子４とから成る。(Example) FIG. 1 is a diagram showing an example of the present invention. This embodiment consists of a composite semiconductor laser device 1, a semiconductor laser bias circuit 2, a pulse amplification circuit 3, and an input terminal 4.
複合半導体レーザ素子１は、ＩｎＰ基板上にＩｎＧａＡ
ａＰ系混晶を組成とした半導体レーザ素子１１、第一の
モニター受光素子１２及び第二のモニター受光素子１３
ｔＪ′−モノリシックに集積されてなる。第一のモニタ
ー受光素子１２は半導体レーザ素子１１のレーザ発振に
与かるストライプ状活性層のストライプ方向延長線上に
位置し、半導体レーザ素子１１の発振光出力を検出する
。一方、第二のモニター受光素子１３は第一のモニター
受光素子と等しい受光面積を有するが、半導体レーザ素
子１１のストライプ状活性層のストライプ方向延長線上
外に位置し、自然放出光成分のみを検出するっ半導体レ
ーザ素子バイアス回路２は、増幅回路２ｔ、２２．比較
回路２３．２４．マーク率検出回路２５及び直流増幅回
路２６から成る。増幅回路２１で増幅された第一のモニ
ター受光素子１２の出力と増幅回路２２で増幅された第
二のモニター受光素子１３の出力との差が比較回路２３
で検出され、自然放出光成分を除いた半導体レーザ素子
１１のレーザ発振光出力が検出される。一方、入力端子
４に入力したレーザ素子変調パルス信号の一部から、マ
ーク率検出回路２５でマーク率が検出され、比較回路２
３の出力のレーザ発振光出力と前記マーク率とが比較回
路２４で比較され、さらに直流増幅回路２６を通して半
導体レーザ素子１１のバイアス点を定める直流バイアス
電流が与えられる。The composite semiconductor laser device 1 includes InGaA on an InP substrate.
A semiconductor laser device 11 having an aP-based mixed crystal composition, a first monitor light-receiving element 12, and a second monitor light-receiving element 13
tJ' - Monolithically integrated. The first monitor light receiving element 12 is located on the extension line in the stripe direction of the striped active layer that participates in laser oscillation of the semiconductor laser element 11, and detects the oscillation light output of the semiconductor laser element 11. On the other hand, the second monitor light-receiving element 13 has the same light-receiving area as the first monitor light-receiving element, but is located outside the extension line in the stripe direction of the striped active layer of the semiconductor laser element 11, and detects only the spontaneous emission light component. The semiconductor laser element bias circuit 2 includes amplifier circuits 2t, 22 . Comparison circuit 23.24. It consists of a mark rate detection circuit 25 and a DC amplification circuit 26. The difference between the output of the first monitor light receiving element 12 amplified by the amplifier circuit 21 and the output of the second monitor light receiving element 13 amplified by the amplifier circuit 22 is determined by the comparison circuit 23.
The laser oscillation light output of the semiconductor laser device 11 excluding the spontaneous emission light component is detected. On the other hand, the mark rate is detected by the mark rate detection circuit 25 from a part of the laser element modulation pulse signal input to the input terminal 4, and the mark rate is detected by the comparison circuit 25.
The laser oscillation light output of the output No. 3 and the mark rate are compared in a comparison circuit 24, and a DC bias current for determining the bias point of the semiconductor laser element 11 is applied through a DC amplifier circuit 26.
（発明の効果）
本発明によれば、レーザ発振光出力をモニターする為の
モノリシクク集積化受光素子とは別に、自然放出光成分
のみを検出するモノリシクク集積化受光素子を設け、両
受光素子の出力の差から正確な発振光出力を検出し、変
調パルス信号のマーク率の変動に対しても安定な半導体
レーザのバイアス点を与える簡易な半導体レーザ装置が
得られる。(Effects of the Invention) According to the present invention, in addition to the monolithically integrated light receiving element for monitoring the laser oscillation light output, a monolithically integrated light receiving element for detecting only the spontaneous emission light component is provided, and the output of both light receiving elements is provided. It is possible to obtain a simple semiconductor laser device that accurately detects the oscillation light output from the difference between the two and provides a bias point of the semiconductor laser that is stable even when the mark rate of the modulated pulse signal varies.
第１図は本発明の一実施例を示すブロック図である。図
中、１は複合半導体レーザ素子、１１は半導体レーザ素
子、１２は第一のモニター受光素子、１３は第二のモニ
ター受光素子、２は半導体レーザ素子バイアス回路、２
１．２２は増幅回路、２３．２４は比較回路、２５はマ
ーク率検出回路、２６は直流増幅回路、３はパルス増幅
回路、４は入力端子である。FIG. 1 is a block diagram showing one embodiment of the present invention. In the figure, 1 is a composite semiconductor laser element, 11 is a semiconductor laser element, 12 is a first monitor light receiving element, 13 is a second monitor light receiving element, 2 is a semiconductor laser element bias circuit, 2
1.22 is an amplifier circuit, 23.24 is a comparison circuit, 25 is a mark rate detection circuit, 26 is a DC amplifier circuit, 3 is a pulse amplifier circuit, and 4 is an input terminal.
Claims (1)
検出する第一のモニター受光素子と、前記半導体レーザ
素子の自然放出光成分を検出する第二のモニター受光素
子とが半導体基板上に集積されてなる複合半導体レーザ
素子と；前記第一のモニター受光素子の出力と前記第二
のモニター受光素子の出力との差から前記半導体レーザ
素子の出力を検出し、前記半導体レーザ素子に印加され
るパルス信号のマーク率と前記半導体レーザ素子出力と
の差に対応して前記半導体レーザ素子にバイアス電流を
印加する半導体レーザ素子バイアス回路とから成ること
を特徴とする半導体レーザ装置。A semiconductor laser element, a first monitor light-receiving element for detecting an optical output of the semiconductor laser element, and a second monitor light-receiving element for detecting a spontaneous emission light component of the semiconductor laser element are integrated on a semiconductor substrate. a composite semiconductor laser device; the output of the semiconductor laser device is detected from the difference between the output of the first monitor light-receiving device and the output of the second monitor light-receiving device, and a pulse signal is applied to the semiconductor laser device; 1. A semiconductor laser device comprising: a semiconductor laser device bias circuit that applies a bias current to the semiconductor laser device in accordance with the difference between the mark rate of the semiconductor laser device and the output of the semiconductor laser device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12546986A JPS62282474A (en) | 1986-05-30 | 1986-05-30 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12546986A JPS62282474A (en) | 1986-05-30 | 1986-05-30 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62282474A true JPS62282474A (en) | 1987-12-08 |
Family
ID=14910857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12546986A Pending JPS62282474A (en) | 1986-05-30 | 1986-05-30 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62282474A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6720586B1 (en) | 1999-11-15 | 2004-04-13 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same |
| US7092423B2 (en) | 1999-02-17 | 2006-08-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device, optical disk apparatus and optical integrated unit |
| EP1879270A3 (en) * | 2006-05-29 | 2009-07-22 | M.D. MICRO DETECTORS S.p.A. | Method for safely controlling the emission power of a laser and corresponding circuit |
-
1986
- 1986-05-30 JP JP12546986A patent/JPS62282474A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7092423B2 (en) | 1999-02-17 | 2006-08-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device, optical disk apparatus and optical integrated unit |
| US7212556B1 (en) | 1999-02-17 | 2007-05-01 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device optical disk apparatus and optical integrated unit |
| US7426227B2 (en) | 1999-02-17 | 2008-09-16 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device, optical disk apparatus and optical integrated unit |
| US6720586B1 (en) | 1999-11-15 | 2004-04-13 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same |
| US6911351B2 (en) | 1999-11-15 | 2005-06-28 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same |
| EP1879270A3 (en) * | 2006-05-29 | 2009-07-22 | M.D. MICRO DETECTORS S.p.A. | Method for safely controlling the emission power of a laser and corresponding circuit |
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