JPH04171405A - Optical integrating element - Google Patents
Optical integrating elementInfo
- Publication number
- JPH04171405A JPH04171405A JP29847490A JP29847490A JPH04171405A JP H04171405 A JPH04171405 A JP H04171405A JP 29847490 A JP29847490 A JP 29847490A JP 29847490 A JP29847490 A JP 29847490A JP H04171405 A JPH04171405 A JP H04171405A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- layer
- light
- electrodes
- photodetector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims description 21
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 230000031700 light absorption Effects 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 238000005253 cladding Methods 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000005697 Pockels effect Effects 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Landscapes
- Optical Couplings Of Light Guides (AREA)
- Optical Integrated Circuits (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、光集積素子に関し、特に光導光路、光検出器
、及びその他の素子を同一基板上に形成した光集積素子
、例えば光ジヤイロに用いられる光ＩＣセンサ等に関す
る。Detailed Description of the Invention (Industrial Application Field) The present invention relates to an optical integrated device, and particularly to an optical integrated device in which a light guide path, a photodetector, and other elements are formed on the same substrate, such as an optical gyro. The present invention relates to optical IC sensors and the like used.
（従来の技術）
第５図に示すようにＩｎＰ（インジウム・リン）基板２
上にＩｎＧａＡｓ（インジウム・ガリウム・ヒ素）光吸
収層１１を形成した後、この光吸収層１１の側面で光結
合するＩｎＧａＡｓＰ（インジウム・ガリウム・ヒ素・
リン）光導光層３を形成した光集積素子が従来より知ら
れている（Ａｐｐｌ。(Prior art) As shown in Fig. 5, an InP (indium phosphide) substrate 2
After forming an InGaAs (indium gallium arsenide) light absorption layer 11 on top, InGaAsP (indium gallium arsenide) is optically coupled on the side surface of this light absorption layer 11.
An optical integrated device having a light guide layer 3 formed thereon (phosphorus) has been known (Appl.
Ｐｈｙｓ、 Ｌｅｌ＋、、 Ｖｏｌ、 ５６． Ｎｏ、
］６．１６ Ａｐｒｉｌ １９９０）。Phys, Lel+,, Vol, 56. No,
]6.16 April 1990).
なお、第５図の１２ａ、１２ｂと光吸収層１１とによっ
て光検知器が構成されている。Note that a photodetector is constituted by 12a and 12b in FIG. 5 and the light absorption layer 11.
（発明が解決しようとする課題）
前述の従来技術では、光吸収層１１を写真蝕刻（ＰＥＰ
）にてパターン形成した後、この光吸収層１１の側面に
光結合するよう、光導光層３を形成するため、この光結
合工程が繁雑なものとなるという問題がある。(Problems to be Solved by the Invention) In the prior art described above, the light absorption layer 11 is photo-etched (PEP).
) After pattern formation, the light guiding layer 3 is formed so as to be optically coupled to the side surface of the light absorbing layer 11, so there is a problem that this optical coupling process becomes complicated.
また、光吸収層１１と光導光層３との接合面（光結合面
）で光の反射が発生し、反射ノイズとなるが、この反射
ノイズは、光ジヤイロのような微小信号を扱う装置では
大きな問題となる。In addition, reflection of light occurs at the joint surface (optical coupling surface) between the light absorption layer 11 and the light guide layer 3, resulting in reflection noise, but this reflection noise is difficult to generate in devices that handle minute signals such as optical gyroscopes. It becomes a big problem.
更に、上記従来技術は、光検知器と光導光層との結合の
み考慮したものであり、同一基板上にその他の素子を形
成する場合の、これらの素子からの影響については、何
等考慮されていない。Furthermore, the above-mentioned conventional technology only takes into consideration the coupling between the photodetector and the light guide layer, and does not take into account the influence of other elements when these elements are formed on the same substrate. do not have.
本発明は上述の点に鑑みてなされたものであり、製造工
程の簡略化が可能であり、しかも反射ノイズの低減によ
り光検出精度を向上させるとともに、同一基板上の他の
素子から影響を低減することができる光集積素子を提供
することを目的とする。The present invention has been made in view of the above points, and it is possible to simplify the manufacturing process, improve optical detection accuracy by reducing reflection noise, and reduce the influence of other elements on the same substrate. The purpose of the present invention is to provide an optical integrated device that can perform the following steps.
（課題を解決するための手段）
上記目的を達成するため本発明は、半導体基板と、この
基板上に形成された高インピーダンス層と、この高イン
ピーダンス層上に形成された光導光層と、この光導光層
上に形成された光吸収層と、この光吸収層上面に形成さ
れた一対の光検知電極と、前記基板上に形成された他の
素子と、前記基板の下面に形成された前記値の素子の電
極とを有する光集積装置を提供するものである。(Means for Solving the Problems) In order to achieve the above object, the present invention includes a semiconductor substrate, a high impedance layer formed on this substrate, a light guiding layer formed on this high impedance layer, and a semiconductor substrate formed on this substrate. A light absorption layer formed on the light guide layer, a pair of light detection electrodes formed on the upper surface of the light absorption layer, another element formed on the substrate, and the light absorption layer formed on the lower surface of the substrate. The present invention provides an optical integrated device having an electrode of a value element.
（作用）
光導光層と光吸収層（光検知器）との光結合が容易とな
るとともに、結合面での反射ノイズが低減される。また
、高インピーダンス層により、同一基板上の他の素子へ
の入出力信号の光検知器に対する影響が低減される。(Function) Optical coupling between the light guiding layer and the light absorbing layer (photodetector) is facilitated, and reflection noise on the coupling surface is reduced. The high impedance layer also reduces the influence of input/output signals to other elements on the same substrate on the photodetector.
（実施例） 以下、本発明の一実施例を図面を用いて説明する。(Example) An embodiment of the present invention will be described below with reference to the drawings.
第一図は本発明の一実施例に係る光フアイバジャイロ用
の光集積素子を示す。FIG. 1 shows an optical integrated device for an optical fiber gyro according to an embodiment of the present invention.
この光集積素子１は、ＧａＡｓ（ガリウム・ヒ素）基板
２上に形成された、略Ｘ字形のＧａＡＱＡｓ（ガリウム
・アルミニウム・ヒ素）光導光層３、位相変１１１＃４
、モニタ用フォトダイオード５、及び光検出器６を有す
るものであり、第１の光導光層端３ａには発光素子、例
えば半導体レーザ７が光結合され、第２、第３の光導光
層端３ｂ。This optical integrated device 1 includes a substantially X-shaped GaAQAs (gallium aluminum arsenide) light guide layer 3 formed on a GaAs (gallium arsenide) substrate 2, a phase shifter 111#4
, a monitoring photodiode 5, and a photodetector 6, a light emitting element, such as a semiconductor laser 7, is optically coupled to the first light guide layer end 3a, and the second and third light guide layer ends 3b.
３ｃには光フアイバループの両端８ａ、８ｂが光結合さ
れている。Both ends 8a and 8b of an optical fiber loop are optically coupled to 3c.
ここで位相変調器４の断面構造を第２図に示す。Here, a cross-sectional structure of the phase modulator 4 is shown in FIG.
ＧａＡｓ基板２上には、高インピーダンス（ＡｎＧａＡ
ｓ）クラッド層９が形成され、このクラッド層９上に光
導光層（Ｇ ａ Ａ ｓ又はＡＱＧａＡｓ）３が形成さ
れている。光導光層３は、リッヂ部（突出部）３ｄを有
し、このリッチ部３ｄの上面と。On the GaAs substrate 2, there is a high impedance (AnGaA
s) A cladding layer 9 is formed, and a light guiding layer (GaAs or AQGaAs) 3 is formed on this cladding layer 9. The light guide layer 3 has a ridge portion (protrusion) 3d, and an upper surface of the rich portion 3d.
ＧａＡｓ基板２の下面に位相変調用電極１０ａ。A phase modulation electrode 10a is provided on the lower surface of the GaAs substrate 2.
１０ｂが形成されている。これらの電極１０ａ。10b is formed. These electrodes 10a.
１０ｂ間に正弦波状の電圧を印加することにより、位相
変調が行なわれる。Phase modulation is performed by applying a sinusoidal voltage across 10b.
次に、光検出器６の断面構造を第３図に示す。Next, the cross-sectional structure of the photodetector 6 is shown in FIG.
位相変調器４と同様、Ｇ ａ Ａ Ｓ基板２上には、ク
ラッド層９を介して、光導光層３が形成されている。光
検出器６は、この光導光層３の端部上面に形成されたＧ
ａＡｓ光吸収光吸収及１１の光吸収層１１の上面に形成
された１対の光検知電柵１２ａ、１２ｂより成るＭＥＴ
ＡＬ−３ＥＭＩＣＯＮＤＵＣＴＯＲ−ＭＥＴＡＬ （Ｍ
ＳＭ）フォトダイオードにて構成される。Similar to the phase modulator 4, a light guiding layer 3 is formed on the G a AS substrate 2 with a cladding layer 9 interposed therebetween. The photodetector 6 is formed on the top surface of the end of the light guide layer 3.
MET consisting of a pair of photodetecting electric fences 12a and 12b formed on the upper surface of the aAs light absorption layer 11.
AL-3EMI CONDUCTOR-METAL (M
SM) Consists of photodiodes.
ＭＳＭフォトダイオードは、低容量、高速型受光素子、
として、光通信の分野では利用されているが、素子上面
から光を入射するようにして用いる場合は、電極が遮光
する面積が大きくなり、光電変換効率が悪い。MSM photodiode is a low capacitance, high speed light receiving element,
Although it is used in the field of optical communication, when it is used so that light enters from the top surface of the device, the area that the electrode blocks light becomes large and the photoelectric conversion efficiency is poor.
これに対し、光導光層に積層して用いる場合は、光が、
下面より入射するため、遮光するものが無く、光電変換
効率が高い。On the other hand, when used by laminating the light guide layer, the light
Since the light enters from the bottom, there is nothing to block the light, resulting in high photoelectric conversion efficiency.
また、この光検出器６の電極の一つを、ＧａＡｓ基板２
の下面に形成した場合、位相変調器４もＧ ａ Ａ ｓ
基板２の下面に電極を形成しているため、この位相変調
器４の入力信号により影響を受け、微小な光信号を検出
できなくなる。Furthermore, one of the electrodes of this photodetector 6 is connected to the GaAs substrate 2.
When formed on the lower surface of the phase modulator 4, the phase modulator 4 also
Since the electrode is formed on the lower surface of the substrate 2, it is affected by the input signal of the phase modulator 4, making it impossible to detect minute optical signals.
このため、本実施例では、ＭＳＭフォトダイオードの画
電極を光吸収層の上面に設け、さらに高インピーダンス
クラッド層９を設けている。Therefore, in this embodiment, the picture electrode of the MSM photodiode is provided on the upper surface of the light absorption layer, and the high impedance cladding layer 9 is further provided.
これにより、位相変調器４からの影響を低減し、光検出
精度を向上させることができる。Thereby, the influence from the phase modulator 4 can be reduced and the photodetection accuracy can be improved.
また、第４図に示すように光検出Ｍ６の画電極１２ａ、
−１２ｂはくし形電極を用い、夫々のくし歯状電極を交
互に１〜３ｐｍ程度の間隔にて対向配置している。Further, as shown in FIG. 4, the picture electrode 12a of the photodetector M6,
-12b uses comb-shaped electrodes, and the comb-shaped electrodes are alternately arranged facing each other at intervals of about 1 to 3 pm.
そして、この両電極間には、５■の電圧が印加されるた
め、非常に高感度となり、微小な光を検知することがで
きる。Since a voltage of 5μ is applied between these two electrodes, the sensitivity is extremely high and minute light can be detected.
また、光モニタ用フォトダイオード５も、この光検出器
６と同様、ＭＳＭフォトダイオードにて構成されている
。Further, the light monitoring photodiode 5 is also composed of an MSM photodiode, like the photodetector 6.
尚、光吸収層１１は例えばＡ Ｑ Ｇ ａ Ａ ｓより
成るインピーダンス整合層（図示せず）を介して、光導
光層３上に形成してもよい。Note that the light absorption layer 11 may be formed on the light guide layer 3 via an impedance matching layer (not shown) made of AQGaAs, for example.
また、本実施例ではＧ ａ Ａ ｓ系基板を用いたが、
他の■−Ｖ族系基板、例えばＩｎＰ基板、あるいはｎ−
ＶＩ族系基板を用いてもいい。尚、Ｓｌ系基板では、１
次の電気光学効果（ポッケルス効果）が生じない点や、
ヘテロ接合の形成が困難な点により、基板としては適さ
ない。Furthermore, although a GaAs-based substrate was used in this example,
Other ■-V group substrates, such as InP substrates or n-
A group VI substrate may also be used. In addition, for the Sl-based substrate, 1
The following electro-optical effect (Pockels effect) does not occur,
It is not suitable as a substrate because it is difficult to form a heterojunction.
また、本発明はこの一実施例に限定されるものではなく
、様々な応用ができるものである。Further, the present invention is not limited to this one embodiment, but can be applied in various ways.
（発明の効果）
以上詳述したように本発明によると、基板と、光吸収層
及び光検知電極から成る光検出器との間に高インピーダ
ンス層を設けることにより、基板上の他の素子からの影
響を低減することが可能となり、光検出精度が向上する
。(Effects of the Invention) As detailed above, according to the present invention, by providing a high impedance layer between the substrate and the photodetector consisting of the light absorption layer and the photodetection electrode, This makes it possible to reduce the influence of light, improving photodetection accuracy.
また、光導光層上に光吸収層を形成するため、光検出器
を容易に光導光層に光結合でき、かつ光検出器と光導光
層との間での反射ノイズが少なくすることができる。In addition, since the light absorption layer is formed on the light guide layer, the photodetector can be easily optically coupled to the light guide layer, and reflection noise between the photodetector and the light guide layer can be reduced. .
更に、光検出器の１対の電極を、光検出器の上面より取
り出すため、同一基板上の他の素子の影響を受けること
なく、光検出を行なうことが可能となる。Furthermore, since the pair of electrodes of the photodetector are taken out from the top surface of the photodetector, it is possible to perform photodetection without being affected by other elements on the same substrate.
第１図は本発明の一実施例に係る光フアイバジャイロ用
の光集積素子を示す図、第２図は位相変調器の断面構造
を示す図、第３図は光検出器の断面構造を示す図、第４
図は光検出器の電極構造を説明するための図、第５図は
従来の光集積素子の一例を示す図である。
１・・光集積素子、２・半導体基板、３・光導光層、４
・・位相変調器、６・光検出器、９ 高インピーダンス
クラッド層、１０ａ、１０ｂ・位相変調用電極、１２ａ
、１２ｂ 光検知電極。
第 １ 図
第２図
第３図
第４図
第５図FIG. 1 is a diagram showing an optical integrated device for an optical fiber gyro according to an embodiment of the present invention, FIG. 2 is a diagram showing a cross-sectional structure of a phase modulator, and FIG. 3 is a diagram showing a cross-sectional structure of a photodetector. Figure, 4th
The figure is a diagram for explaining the electrode structure of a photodetector, and FIG. 5 is a diagram showing an example of a conventional optical integrated device. 1. Optical integrated element, 2. Semiconductor substrate, 3. Light guide layer, 4
・・Phase modulator, 6・Photodetector, 9 High impedance cladding layer, 10a, 10b・Phase modulation electrode, 12a
, 12b light sensing electrode. Figure 1 Figure 2 Figure 3 Figure 4 Figure 5
Claims (1)
ダンス層と、この高インピーダンス層上に形成された光
導光層と、この光導光層上に形成された光吸収層と、こ
の光吸収層上面に形成された一対の光検知電極と、前記
基板上に形成された他の素子と、前記基板の下面に形成
された前記他の素子の電極とを有することを特徴とする
光集積素子。1. A semiconductor substrate, a high impedance layer formed on this substrate, a light guide layer formed on this high impedance layer, a light absorption layer formed on this light guide layer, and this light absorption layer. 1. An optical integrated device comprising: a pair of photodetecting electrodes formed on an upper surface; another element formed on the substrate; and an electrode of the other element formed on a lower surface of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29847490A JP2843874B2 (en) | 1990-11-02 | 1990-11-02 | Optical integrated device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29847490A JP2843874B2 (en) | 1990-11-02 | 1990-11-02 | Optical integrated device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04171405A true JPH04171405A (en) | 1992-06-18 |
| JP2843874B2 JP2843874B2 (en) | 1999-01-06 |
Family
ID=17860173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29847490A Expired - Fee Related JP2843874B2 (en) | 1990-11-02 | 1990-11-02 | Optical integrated device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2843874B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08204226A (en) * | 1995-01-23 | 1996-08-09 | Agency Of Ind Science & Technol | Light receiving element |
| WO2008075542A1 (en) * | 2006-12-20 | 2008-06-26 | Nec Corporation | Photodiode, optical communication device, and optical interconnection module |
| WO2008136479A1 (en) * | 2007-05-01 | 2008-11-13 | Nec Corporation | Waveguide path coupling-type photodiode |
-
1990
- 1990-11-02 JP JP29847490A patent/JP2843874B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08204226A (en) * | 1995-01-23 | 1996-08-09 | Agency Of Ind Science & Technol | Light receiving element |
| WO2008075542A1 (en) * | 2006-12-20 | 2008-06-26 | Nec Corporation | Photodiode, optical communication device, and optical interconnection module |
| JP5282887B2 (en) * | 2006-12-20 | 2013-09-04 | 日本電気株式会社 | Photodiode, optical communication device and optical interconnection module |
| WO2008136479A1 (en) * | 2007-05-01 | 2008-11-13 | Nec Corporation | Waveguide path coupling-type photodiode |
| JPWO2008136479A1 (en) * | 2007-05-01 | 2010-07-29 | 日本電気株式会社 | Waveguide-coupled photodiode |
| US8467637B2 (en) | 2007-05-01 | 2013-06-18 | Nec Corporation | Waveguide path coupling-type photodiode |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2843874B2 (en) | 1999-01-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11196395B2 (en) | Optical differential low-noise receivers and related methods | |
| JPS61140189A (en) | Semiconductor laser | |
| CN110319828A (en) | A kind of the resonance type optical fiber gyro system and its signal detecting method of bicyclic cavity configuration | |
| GB2028497A (en) | Interferometer gyro | |
| WO1997034193A3 (en) | All-optical bit phase sensing | |
| JPH03290606A (en) | Optical semiconductor device | |
| JPH04171405A (en) | Optical integrating element | |
| CN115308834B (en) | Integrated optical transceiver chip, optoelectronic device and optical transceiver system | |
| US5397889A (en) | Guided-wave photoreceptor based on quantum wells made of semiconductor materials, particularly for coherent communications system with polarization diversity | |
| JPS62285466A (en) | Interconnection of integrated circuit and integrated circuit | |
| US7309854B2 (en) | Photo-detectors and optical devices incorporating same | |
| JPH0511609B2 (en) | ||
| JPS62282474A (en) | Semiconductor laser device | |
| JP4014020B2 (en) | Optical signal processing system | |
| JPH02194687A (en) | Optical integrated circuit | |
| JP2700262B2 (en) | Light detection method | |
| JPS60257325A (en) | Photovoltage sensor | |
| JPS6425587A (en) | Integrated semiconductor laser | |
| JP2667168B2 (en) | Edge-receiving photodiode | |
| JPS63278281A (en) | Light detector | |
| JPH0257927A (en) | Semiconductor light-sensing element | |
| JPH02237176A (en) | Photodetector | |
| JPH02228077A (en) | Semiconductor photodetector | |
| JPH09257419A (en) | Optical waveguide element | |
| JPH0484120A (en) | Mode separator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |