JPH038101B2 - - Google Patents

Info

Publication number
JPH038101B2
JPH038101B2 JP56209764A JP20976481A JPH038101B2 JP H038101 B2 JPH038101 B2 JP H038101B2 JP 56209764 A JP56209764 A JP 56209764A JP 20976481 A JP20976481 A JP 20976481A JP H038101 B2 JPH038101 B2 JP H038101B2
Authority
JP
Japan
Prior art keywords
laser
electron beam
preheating
laser annealing
spot diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56209764A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58114435A (ja
Inventor
Junji Sakurai
Seiichiro Kawamura
Motoo Nakano
Kenichi Kawashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56209764A priority Critical patent/JPS58114435A/ja
Publication of JPS58114435A publication Critical patent/JPS58114435A/ja
Publication of JPH038101B2 publication Critical patent/JPH038101B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
JP56209764A 1981-12-28 1981-12-28 レザ−アニ−ル方法 Granted JPS58114435A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56209764A JPS58114435A (ja) 1981-12-28 1981-12-28 レザ−アニ−ル方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56209764A JPS58114435A (ja) 1981-12-28 1981-12-28 レザ−アニ−ル方法

Publications (2)

Publication Number Publication Date
JPS58114435A JPS58114435A (ja) 1983-07-07
JPH038101B2 true JPH038101B2 (cg-RX-API-DMAC7.html) 1991-02-05

Family

ID=16578232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56209764A Granted JPS58114435A (ja) 1981-12-28 1981-12-28 レザ−アニ−ル方法

Country Status (1)

Country Link
JP (1) JPS58114435A (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6050166A (ja) * 1983-08-26 1985-03-19 Res Dev Corp Of Japan プラズマ蒸着法及びその装置
JPS60211078A (ja) * 1984-04-05 1985-10-23 Fuji Electric Corp Res & Dev Ltd 導電膜の形成方法
US7622374B2 (en) 2005-12-29 2009-11-24 Infineon Technologies Ag Method of fabricating an integrated circuit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148430A (en) * 1979-05-09 1980-11-19 Toshiba Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS58114435A (ja) 1983-07-07

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