JPH038100B2 - - Google Patents

Info

Publication number
JPH038100B2
JPH038100B2 JP55174174A JP17417480A JPH038100B2 JP H038100 B2 JPH038100 B2 JP H038100B2 JP 55174174 A JP55174174 A JP 55174174A JP 17417480 A JP17417480 A JP 17417480A JP H038100 B2 JPH038100 B2 JP H038100B2
Authority
JP
Japan
Prior art keywords
substrate
temperature
vacuum
grooves
substrate holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55174174A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5797616A (en
Inventor
Masahiko Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP55174174A priority Critical patent/JPS5797616A/ja
Publication of JPS5797616A publication Critical patent/JPS5797616A/ja
Publication of JPH038100B2 publication Critical patent/JPH038100B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Landscapes

  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP55174174A 1980-12-10 1980-12-10 Base plate for vacuum equipment Granted JPS5797616A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55174174A JPS5797616A (en) 1980-12-10 1980-12-10 Base plate for vacuum equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55174174A JPS5797616A (en) 1980-12-10 1980-12-10 Base plate for vacuum equipment

Publications (2)

Publication Number Publication Date
JPS5797616A JPS5797616A (en) 1982-06-17
JPH038100B2 true JPH038100B2 (enExample) 1991-02-05

Family

ID=15973994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55174174A Granted JPS5797616A (en) 1980-12-10 1980-12-10 Base plate for vacuum equipment

Country Status (1)

Country Link
JP (1) JPS5797616A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60200963A (ja) * 1984-03-23 1985-10-11 Hitachi Ltd 薄膜形成装置
JPS6214431A (ja) * 1985-07-11 1987-01-23 Tokuda Seisakusho Ltd プラズマ処理装置
JPS63276225A (ja) * 1987-05-08 1988-11-14 Tokyo Electron Ltd アッシング装置
JPS63284820A (ja) * 1987-05-15 1988-11-22 Fujitsu Ltd ドライエッチング装置
JP2713956B2 (ja) * 1988-03-04 1998-02-16 株式会社日立製作所 低温ドライエッチング装置
JPH01315135A (ja) * 1988-03-11 1989-12-20 Sumitomo Metal Ind Ltd プラズマエッチング装置
JPH088247B2 (ja) * 1990-11-16 1996-01-29 日本碍子株式会社 半導体ウエハー加熱用セラミックスヒーター
JP3141208B2 (ja) * 1991-06-03 2001-03-05 富士通株式会社 ドライエッチング装置のウェハ保持盤
JP2008284557A (ja) * 2007-05-15 2008-11-27 Shinko Seiki Co Ltd 加熱冷却装置
US9847240B2 (en) * 2014-02-12 2017-12-19 Axcelis Technologies, Inc. Constant mass flow multi-level coolant path electrostatic chuck

Also Published As

Publication number Publication date
JPS5797616A (en) 1982-06-17

Similar Documents

Publication Publication Date Title
US4512391A (en) Apparatus for thermal treatment of semiconductor wafers by gas conduction incorporating peripheral gas inlet
KR0160510B1 (ko) 다구역 평면 히이터 어셈블리 및 그의 운전 방법
US6123775A (en) Reaction chamber component having improved temperature uniformity
US6129046A (en) Substrate processing apparatus
KR100974130B1 (ko) 용접된 판과 저항식 히터를 갖는 기판 지지대
US5566744A (en) Apparatus and method to ensure heat transfer to and from an entire substrate during semiconductor processing
JP3347742B2 (ja) 真空処理装置のための熱伝導性チャック、熱伝達装置及びチャック本体と基材との間で熱を伝達させる方法
KR102886824B1 (ko) 에지/중심 불균일성 완화를 위한 웨이퍼의 외측 주변부 근방 리세스된 영역들을 특징으로 하는 반도체 프로세싱 척들
JPH038100B2 (enExample)
KR102550680B1 (ko) 선택적인 전-세정을 위한 신속 응답 페디스털 조립체
JPH0645261A (ja) 半導体気相成長装置
EP0145975B1 (en) Apparatus and method for heating objects eg chips during soldering, to and maintaining them at a desired temperature
JP2935487B2 (ja) 基板を液化ガス温度で処理する装置
KR20090034634A (ko) 웨이퍼 냉각용 쿨 플레이트 및 그 제조방법
TWI830398B (zh) 基座、基座的製造方法及等離子體處理設備
JPH05243191A (ja) ドライエッチング装置
WO2021034595A1 (en) Heated substrate support with thermal baffles
JPH0227715A (ja) 気相成長装置用加熱ステージ
US3348297A (en) Method of manufacturing a mount for a semi-conductor device
JPH0237693B2 (enExample)
JPS6324411B2 (enExample)
JP7650369B2 (ja) 高温シャワーヘッドの製造
KR102940022B1 (ko) 에지/중심 불균일성 완화를 위한 웨이퍼의 외측 주변부 근방 리세스된 영역들을 특징으로 하는 반도체 프로세싱 척들
JPH0456126A (ja) 半導体製造装置
JPH08222360A (ja) 真空加熱兼冷却均熱ヒータ