JPH0380535B2 - - Google Patents
Info
- Publication number
- JPH0380535B2 JPH0380535B2 JP58039096A JP3909683A JPH0380535B2 JP H0380535 B2 JPH0380535 B2 JP H0380535B2 JP 58039096 A JP58039096 A JP 58039096A JP 3909683 A JP3909683 A JP 3909683A JP H0380535 B2 JPH0380535 B2 JP H0380535B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- carbon
- seeds
- solvent metal
- solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010432 diamond Substances 0.000 claims description 46
- 229910003460 diamond Inorganic materials 0.000 claims description 39
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 19
- 229910052799 carbon Inorganic materials 0.000 claims description 18
- 239000002904 solvent Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 5
- 230000002194 synthesizing effect Effects 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000003786 synthesis reaction Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 238000001308 synthesis method Methods 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- -1 etc. Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/0655—Diamond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
- B01J2203/068—Crystal growth
Description
【発明の詳細な説明】
本発明はダイヤモンド合成法に関し、特にダイ
ヤモンド種子を用い、その成長をはかるダイヤモ
ンド合成法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a diamond synthesis method, and more particularly to a diamond synthesis method that uses diamond seeds and measures their growth.
非ダイヤモンド炭素(以下、炭素という)、溶
媒金属から超高圧、高温下でダイヤモンドを合成
することは古くから知られており、この場合合成
系内に予じめダイヤモンド種子を混合しておく方
法も知られている。 It has been known for a long time that diamond can be synthesized from non-diamond carbon (hereinafter referred to as carbon) and solvent metals under ultra-high pressure and high temperature. Are known.
ダイヤモンド種子はこれをそのまま混合してお
く方法もあり、またダイヤモンドに予じめ溶媒金
属で被覆しておく方法もある(特公昭49−4630)。 Diamond seeds can be mixed as they are, or diamonds can be coated with a solvent metal in advance (Japanese Patent Publication No. 49-4630).
合成ダイヤモンドはその用途の多くは砥粒であ
るが、砥粒としての性能をよくするには、ダイヤ
モンドの外形が扁平でない等いわゆる自形性にす
ぐれていること、粒内に気泡等結晶欠陥が少ない
こと、高純度であること等良質のダイヤモンドで
あることが要求される。 Synthetic diamonds are mostly used as abrasive grains, but in order to improve their performance as abrasive grains, the outer shape of the diamond is not flat, so-called euhedral properties, and the grains must have crystal defects such as air bubbles. It is required that the diamond be of high quality, with a small number of diamonds, and be of high purity.
本発明はこれらの要求に適合するダイヤモンド
を提供することを目的とする。 The present invention aims to provide a diamond that meets these requirements.
ダイヤモンド種子を用いた合成成長法におい
て、良質のダイヤモンドを得るにはダイヤモンド
種子と炭素との直接々触を避けることが望ましい
と云われている。ダイヤモンドが成長するのは一
旦溶媒金属に溶けた炭素が析出するときにダイヤ
モンドになるものであるが、ダイヤモンド種子と
炭素が直接々触していると炭素の不純物がダイヤ
モンドに侵入したりして良好な結晶成長が営まれ
ない。 In the synthetic growth method using diamond seeds, it is said that in order to obtain high quality diamonds, it is desirable to avoid direct contact between the diamond seeds and carbon. Diamond grows when carbon, which has been dissolved in a solvent metal, precipitates, but if the diamond seed and carbon are in direct contact, carbon impurities may invade the diamond, resulting in poor growth. Crystal growth is not carried out.
この意味では前記したダイヤモンド種子を溶媒
金属で被覆する方法は有効である。しかし溶媒金
属を用いると高温ではダイヤモンド種子を溶解す
る。ダイヤモンド合成操作は通常第1図点線に示
すように先ず圧力を上げ、次いで温度を上げる方
法がとられている。そして良質のダイヤモンドを
得るには合成条件はなるべく相平衡線3の近傍1
が望ましいと云われている。これは緩和な条件下
で成長させることを意味する。図の×点2のよう
に平衡線から離れている点は望ましくない。 In this sense, the method described above of coating diamond seeds with a solvent metal is effective. However, the use of solvent metals dissolves the diamond seeds at high temperatures. Diamond synthesis operations usually involve first increasing the pressure and then increasing the temperature, as shown by the dotted line in Figure 1. In order to obtain high quality diamonds, the synthesis conditions should be as close to 1 as possible to the phase equilibrium line 3.
is said to be desirable. This means growing under mild conditions. Points that are far from the equilibrium line, such as point 2 in the diagram, are not desirable.
ダイヤモンド種子を溶媒金属で被覆し、第1図
のようにして合成を行なうと、先ずダイヤモンド
の表面が溶解し、さらにダイヤモンド以外の炭素
の溶解によつて被覆金属は所定の炭素濃度にな
り、これがダイヤモンドに析出の際、析出速度が
早く、十分に良質の結晶が得難い。ただ種子結晶
の自形性がよくない場合は、溶媒金属によつて種
子粒の角を優先的に溶解し、種子の自形性をよく
するなどの作用効果は認められる。本発明はこの
ような溶解を必要としない、即ち比較的形のよい
ダイヤモンド細粒を種子に用いる場合に特に適す
る。 When a diamond seed is coated with a solvent metal and synthesized as shown in Figure 1, the surface of the diamond first dissolves, and then the coated metal reaches a predetermined carbon concentration due to the dissolution of carbon other than the diamond. When depositing on diamond, the precipitation rate is fast and it is difficult to obtain crystals of sufficiently high quality. However, when the euhedral property of the seed crystal is poor, the solvent metal preferentially dissolves the corners of the seed grain, improving the euhedral property of the seed. The present invention does not require such dissolution, ie it is particularly suitable where relatively well-shaped diamond granules are used in the seeds.
本発明において非溶媒金属としてはCu、Ag、
Au、Sn、Zn、Pb等が用いられる。被覆方法は公
知の電解、無電解の外、物質の被覆法として公知
の蒸着法、熱分解法、機械的に塗布する方法など
が用いられる。 In the present invention, the non-solvent metals include Cu, Ag,
Au, Sn, Zn, Pb, etc. are used. In addition to known electrolytic and non-electrolytic coating methods, known material coating methods include vapor deposition, thermal decomposition, mechanical coating, and the like.
ダイヤモンド種子は一般的には30μm以上のも
のが適する。 Diamond seeds with a diameter of 30 μm or more are generally suitable.
このダイヤモンド種子に上記金属を被覆する
が、その厚さは1〜100μmが適当である。 This diamond seed is coated with the above-mentioned metal, and the thickness thereof is suitably 1 to 100 μm.
本発明における非溶媒金属の作用はダイヤモン
ド合成の初期において、特に第1図の点2の付近
におけるダイヤモンドの溶解を防ぎ、種子周囲の
金属中の炭素濃度を下げ、そしてダイヤモンド析
出時は非溶媒金属は溶媒金属と合金化し、これに
は炭素が溶解しているが、このときは合成系内は
第1図の点1附近にあるので、この溶解炭素の析
出は緩やかである。このような作用機構により良
質のダイヤモンドが生成するものと考えられる。 The action of the non-solvent metal in the present invention is to prevent the dissolution of diamond in the early stage of diamond synthesis, especially near point 2 in Figure 1, to lower the carbon concentration in the metal around the seed, and to prevent the non-solvent metal from dissolving the diamond during diamond precipitation. is alloyed with the solvent metal, and carbon is dissolved in it, but at this time, since the inside of the synthesis system is near point 1 in FIG. 1, the precipitation of this dissolved carbon is gradual. It is believed that this mechanism of action produces diamonds of high quality.
溶媒金属はダイヤモンド合成で周知のFe、Co、
Ni等の周期律表第8族の元素、Cr、Ta等及びこ
れらの合金が用いられる。 Solvent metals include Fe, Co, and Co, which are well known in diamond synthesis.
Elements of group 8 of the periodic table such as Ni, Cr, Ta, etc., and alloys thereof are used.
各物質の混合割合は溶媒金属100重量部に対し、
炭素30〜500重量部、ダイヤモンド種子(被覆部
を含む)5重量部以下が適当である。 The mixing ratio of each substance is based on 100 parts by weight of solvent metal.
Suitable amounts are 30 to 500 parts by weight of carbon and 5 parts by weight or less of diamond seeds (including the coated part).
合成法はこれら各物質粉末を単に混合する方
法、炭素及び溶媒金属を薄い板状に加工し、これ
らを交互に積層する方法が用いられる。ダイヤモ
ンド種子はこの板の間に介在させる。種子はでき
るだけ均一に分散しておくこと、望ましくは規則
正しく配置することである。例えば炭素板又は溶
媒金属板に等間隔で小孔を設け、その中に種子を
封入しておく方法がある。勿論、板上に規則的に
固着しておいてもよい。 Synthesis methods include simply mixing powders of these substances, and processing carbon and solvent metal into thin plates and laminating them alternately. Diamond seeds are interposed between these plates. Seeds should be distributed as evenly as possible, preferably in regular order. For example, there is a method in which small holes are provided at equal intervals in a carbon plate or a solvent metal plate, and seeds are sealed in the holes. Of course, they may be fixed regularly on the board.
実施例
ダイヤモンド種子に105〜125μmの粒子を用
い、これに無電解法でCuメツキを行なつた。メ
ツキ層の厚さは約10μmである。Example Diamond seeds with particles of 105 to 125 μm were plated with Cu using an electroless method. The thickness of the plating layer is about 10 μm.
溶媒金属には30Ni−70Feの0.25mm厚さの円板
を用い、これに0.6mm間隔(中心間)で直径0.2mm
の小孔を設けた。この小孔に上記種子を配置し
た。 A 0.25 mm thick disk of 30Ni-70Fe was used as the solvent metal, and a 0.2 mm diameter disk was used at 0.6 mm intervals (center to center).
A small hole was provided. The above seeds were placed in this small hole.
炭素としては黒鉛円板(厚さ1.6mm)を用いた。
これらの金属板と炭素板を多数交互に積層し、超
高圧装置に装填し、ダイヤモンド合成を行なつ
た。第1図に示すように昇圧、昇温し、最終の条
件は推定で温度1450℃、圧力53000気圧であつた。
保持時間は約30分間である。 A graphite disk (thickness 1.6 mm) was used as the carbon.
A large number of these metal plates and carbon plates were alternately stacked and loaded into an ultra-high pressure device to perform diamond synthesis. As shown in Figure 1, the pressure and temperature were increased, and the final conditions were estimated to be a temperature of 1,450°C and a pressure of 53,000 atmospheres.
Holding time is approximately 30 minutes.
得られたダイヤモンドは大部分は種子が成長し
たもので、その大きさは400〜500μmであつて、
形状は6〜8面体の規則的構造をなしており、内
部にも経晶欠陥が見られず、また高純度のもので
あつた。 Most of the diamonds obtained were grown seeds, and the size was 400 to 500 μm.
It had a regular hexahedral to octahedral structure, had no internal crystal defects, and was highly pure.
第1図はダイヤモンドと炭素の相平衡線及びダ
イヤモンド合成操作を示すグラフである。
3……平衡線。
FIG. 1 is a graph showing the phase equilibrium line of diamond and carbon and the diamond synthesis operation. 3...Equilibrium line.
Claims (1)
ンド種子から高温、高圧下でダイヤモンドを合成
する方法において、ダイヤモンド種子を非溶媒金
属で被覆したものを用いることを特徴とする方
法。1. A method for synthesizing diamond from non-diamond carbon, solvent metal and diamond seeds under high temperature and pressure, characterized by using a diamond seed coated with a non-solvent metal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58039096A JPS59164608A (en) | 1983-03-11 | 1983-03-11 | Method for synthesizing diamond |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58039096A JPS59164608A (en) | 1983-03-11 | 1983-03-11 | Method for synthesizing diamond |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59164608A JPS59164608A (en) | 1984-09-17 |
JPH0380535B2 true JPH0380535B2 (en) | 1991-12-25 |
Family
ID=12543545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58039096A Granted JPS59164608A (en) | 1983-03-11 | 1983-03-11 | Method for synthesizing diamond |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59164608A (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5288289A (en) * | 1976-01-16 | 1977-07-23 | Gen Electric | Method and apparatus for making diamonds |
JPS5350086A (en) * | 1976-10-18 | 1978-05-08 | Ishizuka Kenkyusho | Synthesis of diamond |
JPS5669212A (en) * | 1979-11-01 | 1981-06-10 | Sumitomo Electric Ind Ltd | Synthesis of diamond |
JPS58161995A (en) * | 1982-03-19 | 1983-09-26 | Sumitomo Electric Ind Ltd | Method for synthesizing diamond |
-
1983
- 1983-03-11 JP JP58039096A patent/JPS59164608A/en active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5288289A (en) * | 1976-01-16 | 1977-07-23 | Gen Electric | Method and apparatus for making diamonds |
JPS5350086A (en) * | 1976-10-18 | 1978-05-08 | Ishizuka Kenkyusho | Synthesis of diamond |
JPS5669212A (en) * | 1979-11-01 | 1981-06-10 | Sumitomo Electric Ind Ltd | Synthesis of diamond |
JPS58161995A (en) * | 1982-03-19 | 1983-09-26 | Sumitomo Electric Ind Ltd | Method for synthesizing diamond |
Also Published As
Publication number | Publication date |
---|---|
JPS59164608A (en) | 1984-09-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0780153B1 (en) | Diamond synthesis | |
US4547257A (en) | Method for growing diamond crystals | |
Wentorf Jr | Diamond growth rates | |
US5194070A (en) | Process for production of diamond abrasive grains | |
JP3259384B2 (en) | Method of synthesizing diamond single crystal | |
JPH0380535B2 (en) | ||
JPH0323517B2 (en) | ||
JPS59164607A (en) | Method for synthesizing diamond | |
JPH0380534B2 (en) | ||
JPS58161995A (en) | Method for synthesizing diamond | |
JPS59169918A (en) | Synthesis of diamond | |
JP2645719B2 (en) | Diamond synthesis method | |
JPH0433489B2 (en) | ||
JPH06238154A (en) | Synthesizing method for diamond | |
JP3291804B2 (en) | Method of synthesizing diamond single crystal | |
JPH052369B2 (en) | ||
US4123504A (en) | Method of making diamonds synthetically | |
JP3282249B2 (en) | Method of synthesizing diamond single crystal | |
JP2003277184A (en) | Method for synthesizing diamond | |
JPH01228531A (en) | Method for synthesizing diamond | |
JPH0360797B2 (en) | ||
JPS6317492B2 (en) | ||
JPS63236531A (en) | Synthesis of diamond | |
JPS59203717A (en) | Manufacture of diamond crystal | |
JP2678214B2 (en) | Large diamond synthesis method |