JPH0380189A - ウエハ上の多結晶膜形成時における反り発生抑制方法 - Google Patents

ウエハ上の多結晶膜形成時における反り発生抑制方法

Info

Publication number
JPH0380189A
JPH0380189A JP21697789A JP21697789A JPH0380189A JP H0380189 A JPH0380189 A JP H0380189A JP 21697789 A JP21697789 A JP 21697789A JP 21697789 A JP21697789 A JP 21697789A JP H0380189 A JPH0380189 A JP H0380189A
Authority
JP
Japan
Prior art keywords
wafer
elastic body
polycrystalline film
annular
during formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21697789A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0513912B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Takashi Yokoyama
敬志 横山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoxan Corp
Hoxan Co Ltd
Original Assignee
Hoxan Corp
Hoxan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoxan Corp, Hoxan Co Ltd filed Critical Hoxan Corp
Priority to JP21697789A priority Critical patent/JPH0380189A/ja
Publication of JPH0380189A publication Critical patent/JPH0380189A/ja
Publication of JPH0513912B2 publication Critical patent/JPH0513912B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP21697789A 1989-08-23 1989-08-23 ウエハ上の多結晶膜形成時における反り発生抑制方法 Granted JPH0380189A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21697789A JPH0380189A (ja) 1989-08-23 1989-08-23 ウエハ上の多結晶膜形成時における反り発生抑制方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21697789A JPH0380189A (ja) 1989-08-23 1989-08-23 ウエハ上の多結晶膜形成時における反り発生抑制方法

Publications (2)

Publication Number Publication Date
JPH0380189A true JPH0380189A (ja) 1991-04-04
JPH0513912B2 JPH0513912B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-02-23

Family

ID=16696882

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21697789A Granted JPH0380189A (ja) 1989-08-23 1989-08-23 ウエハ上の多結晶膜形成時における反り発生抑制方法

Country Status (1)

Country Link
JP (1) JPH0380189A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102828169A (zh) * 2011-06-13 2012-12-19 北京北方微电子基地设备工艺研究中心有限责任公司 一种载片托盘、托盘装置和结晶膜生长设备
CN104726932A (zh) * 2015-04-09 2015-06-24 江苏盎华光伏工程技术研究中心有限公司 采用籽晶引导的硅片制作设备及其控制方法
CN108048903A (zh) * 2016-02-03 2018-05-18 陈鸽 一种改变载气流向的引流装置
CN110923427A (zh) * 2019-10-29 2020-03-27 张家港宏昌钢板有限公司 一种方坯高温防脱碳装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102828169A (zh) * 2011-06-13 2012-12-19 北京北方微电子基地设备工艺研究中心有限责任公司 一种载片托盘、托盘装置和结晶膜生长设备
CN104726932A (zh) * 2015-04-09 2015-06-24 江苏盎华光伏工程技术研究中心有限公司 采用籽晶引导的硅片制作设备及其控制方法
CN104726932B (zh) * 2015-04-09 2017-06-06 江苏盎华光伏工程技术研究中心有限公司 采用籽晶引导的硅片制作设备及其控制方法
CN108048903A (zh) * 2016-02-03 2018-05-18 陈鸽 一种改变载气流向的引流装置
CN110923427A (zh) * 2019-10-29 2020-03-27 张家港宏昌钢板有限公司 一种方坯高温防脱碳装置

Also Published As

Publication number Publication date
JPH0513912B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-02-23

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