JPH0377654B2 - - Google Patents

Info

Publication number
JPH0377654B2
JPH0377654B2 JP58176902A JP17690283A JPH0377654B2 JP H0377654 B2 JPH0377654 B2 JP H0377654B2 JP 58176902 A JP58176902 A JP 58176902A JP 17690283 A JP17690283 A JP 17690283A JP H0377654 B2 JPH0377654 B2 JP H0377654B2
Authority
JP
Japan
Prior art keywords
sio
single crystal
region
epitaxial growth
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58176902A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6070721A (ja
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58176902A priority Critical patent/JPS6070721A/ja
Publication of JPS6070721A publication Critical patent/JPS6070721A/ja
Publication of JPH0377654B2 publication Critical patent/JPH0377654B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3802—
    • H10P14/3814—
    • H10P14/2905—
    • H10P14/3238—
    • H10P14/3244—
    • H10P14/3411—
    • H10P14/3458—
    • H10P14/382—

Landscapes

  • Recrystallisation Techniques (AREA)
JP58176902A 1983-09-27 1983-09-27 ラテラルエピタキシャル成長方法 Granted JPS6070721A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58176902A JPS6070721A (ja) 1983-09-27 1983-09-27 ラテラルエピタキシャル成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58176902A JPS6070721A (ja) 1983-09-27 1983-09-27 ラテラルエピタキシャル成長方法

Publications (2)

Publication Number Publication Date
JPS6070721A JPS6070721A (ja) 1985-04-22
JPH0377654B2 true JPH0377654B2 (cg-RX-API-DMAC10.html) 1991-12-11

Family

ID=16021749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58176902A Granted JPS6070721A (ja) 1983-09-27 1983-09-27 ラテラルエピタキシャル成長方法

Country Status (1)

Country Link
JP (1) JPS6070721A (cg-RX-API-DMAC10.html)

Also Published As

Publication number Publication date
JPS6070721A (ja) 1985-04-22

Similar Documents

Publication Publication Date Title
US4323417A (en) Method of producing monocrystal on insulator
JPS59161014A (ja) 半導体薄膜結晶化方法
JPS62206816A (ja) 半導体結晶層の製造方法
JPH0377654B2 (cg-RX-API-DMAC10.html)
JPH0136972B2 (cg-RX-API-DMAC10.html)
JPH0413848B2 (cg-RX-API-DMAC10.html)
JPH0236051B2 (cg-RX-API-DMAC10.html)
JPS6320011B2 (cg-RX-API-DMAC10.html)
JPH0236050B2 (cg-RX-API-DMAC10.html)
JPH0560668B2 (cg-RX-API-DMAC10.html)
JPS62130509A (ja) 半導体基体の製造方法
JPS61125169A (ja) 半導体装置の製造方法
JPH0140485B2 (cg-RX-API-DMAC10.html)
JPS6167218A (ja) 半導体装置の製造方法
JPS5837916A (ja) 半導体装置の製造方法
JP2674751B2 (ja) Ｓｏｉ基板の製造方法
JPH0142127B2 (cg-RX-API-DMAC10.html)
JPH0461491B2 (cg-RX-API-DMAC10.html)
JPS63150911A (ja) 半導体装置の製造方法
JPS60117611A (ja) 半導体装置の製造方法
JPS6234716B2 (cg-RX-API-DMAC10.html)
JPH0149003B2 (cg-RX-API-DMAC10.html)
JPH0777195B2 (ja) Ｓｏｉ基板の製造方法
JPS62226621A (ja) 単結晶シリコン薄膜形成方法
JPH0722119B2 (ja) ビ−ムアニ−ル方法