JPH0377315A - Ｍｏ―ｃｖｄ法による半導体製造装置 - Google Patents
Ｍｏ―ｃｖｄ法による半導体製造装置Info
- Publication number
- JPH0377315A JPH0377315A JP21434089A JP21434089A JPH0377315A JP H0377315 A JPH0377315 A JP H0377315A JP 21434089 A JP21434089 A JP 21434089A JP 21434089 A JP21434089 A JP 21434089A JP H0377315 A JPH0377315 A JP H0377315A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- susceptor
- reaction chamber
- reaction
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 238000000034 method Methods 0.000 title abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 46
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 230000007246 mechanism Effects 0.000 abstract description 12
- 238000001514 detection method Methods 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 81
- 239000012495 reaction gas Substances 0.000 description 21
- 239000007789 gas Substances 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 230000006698 induction Effects 0.000 description 5
- 239000002699 waste material Substances 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000004917 carbon fiber Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000003670 easy-to-clean Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 231100000614 poison Toxicity 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 101100215641 Aeromonas salmonicida ash3 gene Proteins 0.000 description 1
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001447 compensatory effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- KWLSQQRRSAWBOQ-UHFFFAOYSA-N dipotassioarsanylpotassium Chemical compound [K][As]([K])[K] KWLSQQRRSAWBOQ-UHFFFAOYSA-N 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000275 quality assurance Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000005070 ripening Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000013316 zoning Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21434089A JPH0377315A (ja) | 1989-08-21 | 1989-08-21 | Ｍｏ―ｃｖｄ法による半導体製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21434089A JPH0377315A (ja) | 1989-08-21 | 1989-08-21 | Ｍｏ―ｃｖｄ法による半導体製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0377315A true JPH0377315A (ja) | 1991-04-02 |
| JPH0547974B2 JPH0547974B2 (enrdf_load_stackoverflow) | 1993-07-20 |
Family
ID=16654142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21434089A Granted JPH0377315A (ja) | 1989-08-21 | 1989-08-21 | Ｍｏ―ｃｖｄ法による半導体製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0377315A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004030066A1 (ja) * | 2002-09-24 | 2004-04-08 | Tokyo Electron Limited | 基板処理装置 |
| US7771536B2 (en) | 2002-09-24 | 2010-08-10 | Tokyo Electron Limited | Substrate processing apparatus |
| JP2018182122A (ja) * | 2017-04-17 | 2018-11-15 | トヨタ自動車株式会社 | 成膜装置 |
| CN109252143A (zh) * | 2017-07-13 | 2019-01-22 | 中国电子科技集团公司第四十八研究所 | 一种基片台 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6285423A (ja) * | 1985-10-11 | 1987-04-18 | Toshiba Corp | 有機金属熱分解気相結晶成長装置 |
| JPS62222631A (ja) * | 1986-03-24 | 1987-09-30 | Nec Corp | 気相成長装置 |
| JPS63196033A (ja) * | 1987-02-09 | 1988-08-15 | Fujitsu Ltd | 気相成長装置 |
-
1989
- 1989-08-21 JP JP21434089A patent/JPH0377315A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6285423A (ja) * | 1985-10-11 | 1987-04-18 | Toshiba Corp | 有機金属熱分解気相結晶成長装置 |
| JPS62222631A (ja) * | 1986-03-24 | 1987-09-30 | Nec Corp | 気相成長装置 |
| JPS63196033A (ja) * | 1987-02-09 | 1988-08-15 | Fujitsu Ltd | 気相成長装置 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004030066A1 (ja) * | 2002-09-24 | 2004-04-08 | Tokyo Electron Limited | 基板処理装置 |
| US7771536B2 (en) | 2002-09-24 | 2010-08-10 | Tokyo Electron Limited | Substrate processing apparatus |
| JP2018182122A (ja) * | 2017-04-17 | 2018-11-15 | トヨタ自動車株式会社 | 成膜装置 |
| CN109252143A (zh) * | 2017-07-13 | 2019-01-22 | 中国电子科技集团公司第四十八研究所 | 一种基片台 |
| CN109252143B (zh) * | 2017-07-13 | 2020-12-11 | 中国电子科技集团公司第四十八研究所 | 一种基片台 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0547974B2 (enrdf_load_stackoverflow) | 1993-07-20 |
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