JPH0373632B2 - - Google Patents
Info
- Publication number
- JPH0373632B2 JPH0373632B2 JP12856384A JP12856384A JPH0373632B2 JP H0373632 B2 JPH0373632 B2 JP H0373632B2 JP 12856384 A JP12856384 A JP 12856384A JP 12856384 A JP12856384 A JP 12856384A JP H0373632 B2 JPH0373632 B2 JP H0373632B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- thin film
- target
- bias
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 31
- 239000010409 thin film Substances 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 8
- 239000010408 film Substances 0.000 description 29
- 239000011521 glass Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
- C23C14/025—Metallic sublayers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12856384A JPS619570A (ja) | 1984-06-22 | 1984-06-22 | 薄膜製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12856384A JPS619570A (ja) | 1984-06-22 | 1984-06-22 | 薄膜製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS619570A JPS619570A (ja) | 1986-01-17 |
| JPH0373632B2 true JPH0373632B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-11-22 |
Family
ID=14987855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12856384A Granted JPS619570A (ja) | 1984-06-22 | 1984-06-22 | 薄膜製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS619570A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0238566A (ja) * | 1988-07-27 | 1990-02-07 | Hitachi Ltd | スパッタ方法およびその装置 |
| JP3945742B2 (ja) * | 1999-05-14 | 2007-07-18 | 高橋 研 | 磁性合金と磁気記録媒体およびその製造方法と磁性膜形成用ターゲットおよび磁気記録装置 |
| CN104694900A (zh) * | 2015-03-27 | 2015-06-10 | 中国工程物理研究院激光聚变研究中心 | 可加偏压式薄膜样品架 |
-
1984
- 1984-06-22 JP JP12856384A patent/JPS619570A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS619570A (ja) | 1986-01-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4097636A (en) | Metallized device | |
| US4994320A (en) | Thin magnetic film having long term stabilized uniaxial anisotropy | |
| JPH0373632B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| US20080006522A1 (en) | Method of producing metal-oxide film | |
| JP3727693B2 (ja) | ＴｉＮ膜製造方法 | |
| JPS61261472A (ja) | バイアススパツタ法およびその装置 | |
| JPH0314906B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| JP3515966B2 (ja) | 光磁気記録素子の製造方法 | |
| JP3318380B2 (ja) | 光磁気記録素子及びその製造方法 | |
| JPS6320302B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| JPS6321298A (ja) | 酸化亜鉛圧電結晶薄膜の製造方法 | |
| JPS6321297A (ja) | 酸化亜鉛圧電結晶薄膜の製造方法 | |
| JPS63176465A (ja) | 反応性スパツタリング成膜方法 | |
| JP2547666B2 (ja) | 光ディスクの製造方法 | |
| JPS6188511A (ja) | 磁性体薄膜製作方法 | |
| JPS6334226B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| JPH0364447A (ja) | 多重膜形成方法 | |
| JPS63210006A (ja) | アモルフアスカ−ボン薄膜の形成方法 | |
| JPS62240762A (ja) | 薄膜形成方法 | |
| JPH0949075A (ja) | スパッタ装置 | |
| JPH05263227A (ja) | 薄膜形成法及びその装置 | |
| JPS59170266A (ja) | 酸化反応性スパツタ方法 | |
| JPS619571A (ja) | 薄膜製造方法 | |
| JPS6333561A (ja) | 薄膜形成方法 | |
| JPH0586467A (ja) | スパツタリング装置 |