JPH0373149B2 - - Google Patents

Info

Publication number
JPH0373149B2
JPH0373149B2 JP57068845A JP6884582A JPH0373149B2 JP H0373149 B2 JPH0373149 B2 JP H0373149B2 JP 57068845 A JP57068845 A JP 57068845A JP 6884582 A JP6884582 A JP 6884582A JP H0373149 B2 JPH0373149 B2 JP H0373149B2
Authority
JP
Japan
Prior art keywords
glass substrate
film
silicon film
germanium
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57068845A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58186950A (ja
Inventor
Yasuhisa Oana
Shusuke Kotake
Nobuo Mukai
Kyozo Ide
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57068845A priority Critical patent/JPS58186950A/ja
Publication of JPS58186950A publication Critical patent/JPS58186950A/ja
Publication of JPH0373149B2 publication Critical patent/JPH0373149B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment

Landscapes

  • Recrystallisation Techniques (AREA)
JP57068845A 1982-04-26 1982-04-26 薄膜半導体装置の製造方法 Granted JPS58186950A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57068845A JPS58186950A (ja) 1982-04-26 1982-04-26 薄膜半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57068845A JPS58186950A (ja) 1982-04-26 1982-04-26 薄膜半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP30328995A Division JPH08213324A (ja) 1995-10-30 1995-10-30 半導体装置

Publications (2)

Publication Number Publication Date
JPS58186950A JPS58186950A (ja) 1983-11-01
JPH0373149B2 true JPH0373149B2 (enrdf_load_stackoverflow) 1991-11-20

Family

ID=13385425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57068845A Granted JPS58186950A (ja) 1982-04-26 1982-04-26 薄膜半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58186950A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2771811B2 (ja) * 1988-02-02 1998-07-02 富士通株式会社 半導体製造装置
US7071042B1 (en) * 2005-03-03 2006-07-04 Sharp Laboratories Of America, Inc. Method of fabricating silicon integrated circuit on glass

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135968A (en) * 1980-03-27 1981-10-23 Canon Inc Amorphous silicon thin film transistor and manufacture thereof

Also Published As

Publication number Publication date
JPS58186950A (ja) 1983-11-01

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