JPH0371397B2 - - Google Patents
Info
- Publication number
- JPH0371397B2 JPH0371397B2 JP60211849A JP21184985A JPH0371397B2 JP H0371397 B2 JPH0371397 B2 JP H0371397B2 JP 60211849 A JP60211849 A JP 60211849A JP 21184985 A JP21184985 A JP 21184985A JP H0371397 B2 JPH0371397 B2 JP H0371397B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor
- type
- gas
- diamond
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000010432 diamond Substances 0.000 claims description 13
- 229910003460 diamond Inorganic materials 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000012495 reaction gas Substances 0.000 claims description 5
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- 150000002430 hydrocarbons Chemical class 0.000 claims description 4
- 239000004215 Carbon black (E152) Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 2
- 125000004429 atom Chemical group 0.000 claims 1
- 238000000354 decomposition reaction Methods 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000005355 Hall effect Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21184985A JPS6270295A (ja) | 1985-09-24 | 1985-09-24 | ｎ型半導体ダイヤモンド膜の製造法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21184985A JPS6270295A (ja) | 1985-09-24 | 1985-09-24 | ｎ型半導体ダイヤモンド膜の製造法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6270295A JPS6270295A (ja) | 1987-03-31 |
| JPH0371397B2 true JPH0371397B2 (fr) | 1991-11-13 |
Family
ID=16612606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21184985A Granted JPS6270295A (ja) | 1985-09-24 | 1985-09-24 | ｎ型半導体ダイヤモンド膜の製造法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6270295A (fr) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5274268A (en) * | 1987-04-01 | 1993-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electric circuit having superconducting layered structure |
| JPH0196094A (ja) * | 1987-10-07 | 1989-04-14 | Tokai Univ | Ｐ型半導体ダイヤモンド膜の製造方法 |
| US5304461A (en) * | 1989-01-10 | 1994-04-19 | Kabushiki Kaisha Kobe Seiko Sho | Process for the selective deposition of thin diamond film by gas phase synthesis |
| JP2730144B2 (ja) * | 1989-03-07 | 1998-03-25 | 住友電気工業株式会社 | 単結晶ダイヤモンド層形成法 |
| JP2813363B2 (ja) * | 1989-03-13 | 1998-10-22 | 日本特殊陶業株式会社 | ダイヤモンド半導体およびその製造方法 |
| JP2884707B2 (ja) * | 1990-05-21 | 1999-04-19 | 住友電気工業株式会社 | ホール素子 |
| WO1992001314A1 (fr) * | 1990-07-06 | 1992-01-23 | Advanced Technology Materials, Inc. | Diamant semi-conducteur de type n et procede de fabrication de celui-ci |
| US6162412A (en) * | 1990-08-03 | 2000-12-19 | Sumitomo Electric Industries, Ltd. | Chemical vapor deposition method of high quality diamond |
| JP3568394B2 (ja) * | 1998-07-07 | 2004-09-22 | 独立行政法人 科学技術振興機構 | 低抵抗ｎ型ダイヤモンドの合成法 |
| JP4949493B2 (ja) * | 2010-02-18 | 2012-06-06 | 日本電信電話株式会社 | ｎ型半導体ダイヤモンドおよびその製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58135117A (ja) * | 1982-01-29 | 1983-08-11 | Natl Inst For Res In Inorg Mater | ダイヤモンドの製造法 |
| JPS5930709A (ja) * | 1982-08-13 | 1984-02-18 | Toa Nenryo Kogyo Kk | 炭素膜及び／又は炭素粒子の製造方法 |
-
1985
- 1985-09-24 JP JP21184985A patent/JPS6270295A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58135117A (ja) * | 1982-01-29 | 1983-08-11 | Natl Inst For Res In Inorg Mater | ダイヤモンドの製造法 |
| JPS5930709A (ja) * | 1982-08-13 | 1984-02-18 | Toa Nenryo Kogyo Kk | 炭素膜及び／又は炭素粒子の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6270295A (ja) | 1987-03-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |