JPH0370909B2 - - Google Patents

Info

Publication number
JPH0370909B2
JPH0370909B2 JP59258858A JP25885884A JPH0370909B2 JP H0370909 B2 JPH0370909 B2 JP H0370909B2 JP 59258858 A JP59258858 A JP 59258858A JP 25885884 A JP25885884 A JP 25885884A JP H0370909 B2 JPH0370909 B2 JP H0370909B2
Authority
JP
Japan
Prior art keywords
region
gate
conductivity type
impurity concentration
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59258858A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61136270A (ja
Inventor
Junichi Nishizawa
Naoshige Tamamushi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP59258858A priority Critical patent/JPS61136270A/ja
Publication of JPS61136270A publication Critical patent/JPS61136270A/ja
Publication of JPH0370909B2 publication Critical patent/JPH0370909B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors

Landscapes

  • Thyristors (AREA)
JP59258858A 1984-12-06 1984-12-06 双方向光スイツチ Granted JPS61136270A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59258858A JPS61136270A (ja) 1984-12-06 1984-12-06 双方向光スイツチ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59258858A JPS61136270A (ja) 1984-12-06 1984-12-06 双方向光スイツチ

Publications (2)

Publication Number Publication Date
JPS61136270A JPS61136270A (ja) 1986-06-24
JPH0370909B2 true JPH0370909B2 (enrdf_load_stackoverflow) 1991-11-11

Family

ID=17326009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59258858A Granted JPS61136270A (ja) 1984-12-06 1984-12-06 双方向光スイツチ

Country Status (1)

Country Link
JP (1) JPS61136270A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2632687B2 (ja) * 1987-12-01 1997-07-23 財団法人半導体研究振興会 電力用半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50161661A (enrdf_load_stackoverflow) * 1974-06-19 1975-12-27
JPS55128870A (en) * 1979-03-26 1980-10-06 Semiconductor Res Found Electrostatic induction thyristor and semiconductor device
JPS5637676A (en) * 1979-09-05 1981-04-11 Hitachi Ltd Field effect type semiconductor switching device

Also Published As

Publication number Publication date
JPS61136270A (ja) 1986-06-24

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees