JPH0369256U - - Google Patents

Info

Publication number
JPH0369256U
JPH0369256U JP1989131166U JP13116689U JPH0369256U JP H0369256 U JPH0369256 U JP H0369256U JP 1989131166 U JP1989131166 U JP 1989131166U JP 13116689 U JP13116689 U JP 13116689U JP H0369256 U JPH0369256 U JP H0369256U
Authority
JP
Japan
Prior art keywords
gate electrode
floating gate
semiconductor substrate
isolation region
control gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1989131166U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1989131166U priority Critical patent/JPH0369256U/ja
Publication of JPH0369256U publication Critical patent/JPH0369256U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP1989131166U 1989-11-10 1989-11-10 Pending JPH0369256U (en, 2012)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1989131166U JPH0369256U (en, 2012) 1989-11-10 1989-11-10

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1989131166U JPH0369256U (en, 2012) 1989-11-10 1989-11-10

Publications (1)

Publication Number Publication Date
JPH0369256U true JPH0369256U (en, 2012) 1991-07-09

Family

ID=31678689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1989131166U Pending JPH0369256U (en, 2012) 1989-11-10 1989-11-10

Country Status (1)

Country Link
JP (1) JPH0369256U (en, 2012)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63150971A (ja) * 1986-12-13 1988-06-23 Nec Corp 不揮発性メモリ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63150971A (ja) * 1986-12-13 1988-06-23 Nec Corp 不揮発性メモリ

Similar Documents

Publication Publication Date Title
HK40790A (en) Semiconductor device and method of producing such a device
IT1213249B (it) Processo per la fabbricazione distrutture integrate includenti celle di memoria non volatili con strati di silicio autoallineati ed associati transistori.
JP2000049306A5 (en, 2012)
JPH0369256U (en, 2012)
JPH01108777A (ja) 不揮発性半導体記憶装置
JPS6041464B2 (ja) メモリセル
JPS57111067A (en) Nonvolatile memory
JPS63114047U (en, 2012)
JPS6420668A (en) Programable read only memory
JPH0211354U (en, 2012)
KR910001990A (ko) 전기적으로 소거가능하고, 전기적으로 프로그램 가능한 판독 전용 메모리셀 및 이의 제조 방법
JPH0644632B2 (ja) 半導体記憶装置
JPH03120054U (en, 2012)
JPS63114046U (en, 2012)
GB1460992A (en) Integrated semiconductor arrangements
JPS5944056U (ja) 電荷転送装置
JPH0427714B2 (en, 2012)
JPH0176066U (en, 2012)
JPS63114045U (en, 2012)
JPH03101519U (en, 2012)
JPH0270433U (en, 2012)
JPS6163853U (en, 2012)
JPH0279063U (en, 2012)
JPS59210663A (ja) 半導体メモリ装置
JPS6448466A (en) Semiconductor device