JPH0369209A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPH0369209A
JPH0369209A JP1206198A JP20619889A JPH0369209A JP H0369209 A JPH0369209 A JP H0369209A JP 1206198 A JP1206198 A JP 1206198A JP 20619889 A JP20619889 A JP 20619889A JP H0369209 A JPH0369209 A JP H0369209A
Authority
JP
Japan
Prior art keywords
output
data
circuit
level
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1206198A
Other languages
Japanese (ja)
Inventor
Kazuhiro Nakao
中尾 和弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC IC Microcomputer Systems Co Ltd
Original Assignee
NEC IC Microcomputer Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC IC Microcomputer Systems Co Ltd filed Critical NEC IC Microcomputer Systems Co Ltd
Priority to JP1206198A priority Critical patent/JPH0369209A/en
Publication of JPH0369209A publication Critical patent/JPH0369209A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent the erroneous connected of a circuit to be connected with an output terminal or circuit destruction caused by timing deviation, etc., by outputting a dissidence detection signal and making the output impedance of an output buffer circuit high when the data of an input end in the output butter circuit is dissident with the data of an output terminal. CONSTITUTION:During a period Ta, at first, when a data latch signal DL is set in a low level state and the level of an output control signal OC is made high, an output signal DO of a delay circuit 31 is a high level while being delayed only for decade time t1. Accordingly, the level of an output AO from an AND gate 4 is made high and the output buffer circuit 2 is turned to an active state. At such a time, output data DT2 of a latch circuit 1 to be inputted to an exclusive OR gate 32 are compared with data OUT of an output terminal TM. When the data are coincident, a detection signal EO at the low level is outputted and when the data are dissident, the detection signal EO at the high level is outputted. Then, when the data are dissident, the level of a dissidence detection signal UE is made low and the level of the output AO from the AND gate 4 is made low. Afterwards, transistors T1 and T2 of the output buffer circuit 2 are turned OFF so that an over current can be prevented from flowing.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体集積回路装置に関し、特に3−ステート
の出力バッファ回路を備えた半導体集積回路装置に関す
る。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor integrated circuit device, and more particularly to a semiconductor integrated circuit device equipped with a 3-state output buffer circuit.

〔従来の技術〕[Conventional technology]

3−ステートの出力バッファは、半導体集積回路装置か
ら外部への信号を伝達する出力部に多く使用されている
Three-state output buffers are often used in output sections that transmit signals from semiconductor integrated circuit devices to the outside.

従来、この種の半導体集積回路装置は、第3図に示すよ
うに、データラッチ信号DLによって入力されたデータ
DTIをラッチし出力(DT2)するラッチ回路1と、
出力制御信号OCが高レベルのときラッチ回路1の出力
データDT2を外部回路への出力端子TMOへ伝達し、
出力制御信号OCが低レベルのときトランジスタTI、
T2をオフとして出力インピーダンスを高インピーダン
スとする3−ステートの出力バッファ回路2とを有する
構成となっていた。
Conventionally, this type of semiconductor integrated circuit device, as shown in FIG. 3, includes a latch circuit 1 that latches and outputs (DT2) data DTI input by a data latch signal DL;
When the output control signal OC is at a high level, transmitting the output data DT2 of the latch circuit 1 to the output terminal TMO to the external circuit;
When the output control signal OC is at a low level, the transistor TI,
The configuration includes a 3-state output buffer circuit 2 in which T2 is turned off and the output impedance is set to high impedance.

次に、この回路の動作について説明する。Next, the operation of this circuit will be explained.

入力されたデータ入力端は、データラッチ信号DLによ
ってラッチ回路1にラッチされて出力バッファ回路2へ
伝達され、この時出力制御信号OCが高レベルであれば
出力バッファ回路2は活性化し、ラッチ回路1の出力デ
ータDT2を出力端子TMOへ出力する。逆に出力制御
信号OCが低レベルであれば、出力バッファ回路2のト
ランジスタTI、T2はオフして出力端子TMoから見
た出力バッファ回路の出力インピーダンスは高インピー
ダンス状態となる。
The input data input terminal is latched by the latch circuit 1 by the data latch signal DL and transmitted to the output buffer circuit 2. At this time, if the output control signal OC is at a high level, the output buffer circuit 2 is activated and the latch circuit is activated. The output data DT2 of 1 is output to the output terminal TMO. Conversely, if the output control signal OC is at a low level, the transistors TI and T2 of the output buffer circuit 2 are turned off, and the output impedance of the output buffer circuit as seen from the output terminal TMo becomes a high impedance state.

この出力バッファ回路2は通常、出力端子TM。This output buffer circuit 2 normally has an output terminal TM.

により外部回路に接続されている。connected to external circuitry.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の半導体集積回路装置は、ラッチ回路lの
出力データDT2を出力バッファ回路2はそのままし、
この出力端子TM、は通常外部回路と接続する構成とな
っているので、出力端子TMoが誤って電源線や接地線
に接続されていたり接続されるシングルチップマイクロ
コンピュタ等とのタイミングのずれによる出力短絡の状
態が起きていても、CPUは感知することができないた
め出力バッファ回路20回路破壊を招くという欠点があ
る。
In the conventional semiconductor integrated circuit device described above, the output data DT2 of the latch circuit l is left unchanged in the output buffer circuit 2, and
This output terminal TM is normally configured to be connected to an external circuit, so if the output terminal TMo is mistakenly connected to the power supply line or ground line, or due to a timing difference with the connected single-chip microcomputer, etc., the output terminal Even if a short circuit occurs, the CPU cannot detect it, so there is a drawback that the output buffer circuit 20 may be destroyed.

本発明の目的は、出力バッファ回路の回路破壊を防止し
、かつユーザーへ不具合を知らせることができる半導体
集積回路装置を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor integrated circuit device that can prevent circuit breakdown of an output buffer circuit and notify a user of a malfunction.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の半導体集積回路装置は、伝達されたデータを所
定のタイミングでラッチし出力するラッチ回路と、出力
制御信号が第1のレベルのとき前記ラッチ回路の出力デ
ータを出力端子へ伝達し第2のレベルのとき出力インピ
ーダンスが高インピーダンスとなる出力バッファ回路と
、前記ラッチ回路の出力データと前記出力端子のデータ
とを比較し不一致のとき不一致検出信号を出力する不一
致検出回路と、前記不一致検出信号が出力されたとき前
記出力バッファ回路の出力インピーダンスを高インピー
ダンスとする制御手段とを有している。
A semiconductor integrated circuit device of the present invention includes a latch circuit that latches and outputs transmitted data at a predetermined timing, and a second latch circuit that transmits output data of the latch circuit to an output terminal when an output control signal is at a first level. an output buffer circuit whose output impedance becomes high impedance when the output impedance is at a level of and control means for setting the output impedance of the output buffer circuit to a high impedance when the output buffer circuit is outputted.

〔実施例〕〔Example〕

次に、本発明の実施例について図面を参照して説明する
Next, embodiments of the present invention will be described with reference to the drawings.

第1図は本発明の一実施例を示す回路図である。FIG. 1 is a circuit diagram showing one embodiment of the present invention.

この実施例は、インバータエ1〜■3を備えデータ入力
端子に伝達されたデータ入力端をデータラッチ信号DL
に従ってラッチし出力(DT2)するラッチ回路1と、
ゲート回路Gl、G2とインバータエラとトランジスタ
TI、T2とを備えANDゲート4を介して入力される
出力制御信号OCが高レベルのときラッチ回路1の出力
データDT2を出力端子TMoへ伝達し、低レベルのと
きトランジスタTI、T2がオフとなり出力インピーダ
ンスが高インピーダンスとなる出力バッファ回路2と、
遅延回路31と排他的論理和ゲート32と3人力のNA
NDゲート33とを備えラッチ回路1の出力データDT
2と出力端子TM、のデータ(OUT)とを比較し不一
致のとき不一致検出信号UEを出力する不一致検出回路
3と、不一致検出信号UEが出力されたとき出力制御信
号0Eをマスクして低レベルにし、出力バッファ回路2
の出力インピーダンスを高インピーダンスとする制御手
段のANDゲート4とを有する構成となっている。
This embodiment includes inverters 1 to 3 and connects the data input terminal transmitted to the data input terminal to the data latch signal DL.
a latch circuit 1 that latches and outputs (DT2) according to
It is equipped with gate circuits Gl, G2, an inverter error, and transistors TI, T2. When the output control signal OC inputted through the AND gate 4 is at a high level, the output data DT2 of the latch circuit 1 is transmitted to the output terminal TMo, an output buffer circuit 2 in which the transistors TI and T2 are turned off when the level is high, and the output impedance becomes high impedance;
Delay circuit 31, exclusive OR gate 32, and three-man NA
The output data DT of the latch circuit 1 includes an ND gate 33.
2 and the data (OUT) of the output terminal TM, and when there is a mismatch, a mismatch detection circuit 3 outputs a mismatch detection signal UE, and when the mismatch detection signal UE is output, it masks the output control signal 0E and sets it to a low level. and output buffer circuit 2
The configuration includes an AND gate 4 as a control means for setting the output impedance of the output impedance to a high impedance.

次に、この実施例の動作について説明する。Next, the operation of this embodiment will be explained.

第2図はこの実施例の動作を説明するための各部信号の
タイミング図である。
FIG. 2 is a timing chart of signals of various parts for explaining the operation of this embodiment.

第2図において、出力端子TMOに誤って電源線または
接地線が接続された場合の初期状態での不一致検出動作
の期間をTri続されたシングルチップマイクロコンピ
ュータとのタイミングのずれ等による不一致検出動作の
期間をTbに示す。
In Fig. 2, the period of mismatch detection operation in the initial state when the power supply line or ground line is mistakenly connected to the output terminal TMO is the mismatch detection operation due to a timing difference with the tri-connected single-chip microcomputer. The period of time is indicated by Tb.

期間Taにおいて、まず、データラッチ信号DLが低レ
ベル状態の場合、出力制御信号OCを高レベルにすると
遅延回路31の出力信号Doは遅延時間tlだけ遅れて
高レベルとなるので、これまでの期間不一致信号UEは
高レベルであり、従ってANDゲート4の出力AOは高
レベルとなり出力バッファ回路2はアクティブ状態とな
る。
In the period Ta, first, when the data latch signal DL is in a low level state, when the output control signal OC is set to a high level, the output signal Do of the delay circuit 31 becomes high level with a delay of delay time tl, so that the previous period The mismatch signal UE is at a high level, so the output AO of the AND gate 4 is at a high level, and the output buffer circuit 2 becomes active.

この場合、遅延回路31の遅延時間tlは出力制御信号
OCが高レベルとなりデータが取込まれるまでの時間で
あればよい。
In this case, the delay time tl of the delay circuit 31 may be any time required until the output control signal OC becomes high level and data is taken in.

この時に排他的論理和ゲート32へ入力されるラッチ回
路1の出力データDT2と出力端子TM。
At this time, the output data DT2 of the latch circuit 1 and the output terminal TM are input to the exclusive OR gate 32.

のデータOUTとが比較され、一致したなら低レベル、
不一致なわば高レベルの検出信号EOが出力され、不一
致ならば不一致検出信号UEを低レベルにし、ANDゲ
ート4の出力AOを低レベルとして出力バッファ回路2
のトランジスタTI。
is compared with the data OUT, and if they match, the level is low,
If there is a mismatch, a high level detection signal EO is output, and if there is a mismatch, the mismatch detection signal UE is set to a low level, and the output AO of the AND gate 4 is set to a low level, and the output buffer circuit 2
transistor TI.

T2をオフさせ、過度の電流が流れるのを防止する。Turn off T2 to prevent excessive current from flowing.

また、期間Tbにおいて、データ入力端子に高レベルあ
るいは低レベルのデータDT1が入力されると、データ
ラッチ信号DLの立上りシこよってこのデータDTIが
ラッチ回路lに取込まれデータDT2として出力され、
出力バッファ回路2を介し外部出力端子TMaに伝達さ
れる。
Further, during period Tb, when high level or low level data DT1 is input to the data input terminal, the data DTI is taken into the latch circuit 1 by the rising edge of the data latch signal DL and output as data DT2.
The signal is transmitted to the external output terminal TMa via the output buffer circuit 2.

と同時に排他的論理和ゲート32へ入力されることによ
り、ラッチ回路lの出力データDT2と出力端子TMO
のデータOUTとが比較され、致したら低レベル、不一
致ならば高レベルの検出信号EOを出力する。
At the same time, by being input to the exclusive OR gate 32, the output data DT2 of the latch circuit l and the output terminal TMO
The detection signal EO is compared with the data OUT, and if they match, a low level detection signal EO is output, and if they do not match, a high level detection signal EO is output.

この時ラッチ回路1の出力データDT2と出力バッファ
回路2の出力データOUTとには、出力バッファ回路2
のデータ伝搬時間t3の分だけずれが生じ、その間不一
致として高レベルの検出信号EOを出力するが、データ
ラッチ信号DLの反転信号DLによってt2の期間マス
クするため、データ伝搬時間のズレによる誤検出は防止
される。
At this time, the output data DT2 of the latch circuit 1 and the output data OUT of the output buffer circuit 2 are
A difference occurs by the data propagation time t3, during which a high-level detection signal EO is output as a mismatch, but since the period t2 is masked by the inverted signal DL of the data latch signal DL, false detection due to the data propagation time difference occurs. is prevented.

データラッチ信号DLの立上りによってその反転信号■
は低レベルから高レベルとなり、NANDゲート33の
出力信号である不一致検出信号UEは検出信号EOによ
り決定され、不一致ならば検出信号EOは高レベルとな
りNANDゲート33の出力信号(UE)は低レベルと
なり、ANDゲート4に入力されることによりANDゲ
ート4の出力信号AOが低レベルとなって出力バッファ
回路2のトランジスタTl’、T2をオフにする。
When the data latch signal DL rises, its inverted signal ■
goes from a low level to a high level, and the mismatch detection signal UE, which is the output signal of the NAND gate 33, is determined by the detection signal EO. If there is a mismatch, the detection signal EO goes to a high level and the output signal (UE) of the NAND gate 33 goes to a low level. As a result, the output signal AO of the AND gate 4 becomes low level and turns off the transistors Tl' and T2 of the output buffer circuit 2.

また、NANDゲート33の出力信号の不一致検出信号
UEは、CPUの割込み信号として回路を構成すれば、
不一致をユーザーに知らせることも可能である。
Moreover, if the mismatch detection signal UE of the output signal of the NAND gate 33 is configured as a CPU interrupt signal,
It is also possible to notify the user of the discrepancy.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、出力バッファ回路の入力
端のデータと出力端子のデータとが不一致のとき、不一
致検出信号を出力すると共に出力バッフ7回路の出力イ
ンピーダンスを高インピーダンスにする構成とすること
により、出力端子と接続される回路の誤接続やタイミン
グのずれ等による回路破壊を防止することができ、かつ
接続不具合をユーザーへ知らせることができる効果があ
る。
As explained above, the present invention is configured to output a mismatch detection signal and set the output impedance of the output buffer 7 circuit to a high impedance when the data at the input end of the output buffer circuit and the data at the output terminal do not match. This has the effect of being able to prevent circuit damage due to incorrect connection or timing deviation of the circuit connected to the output terminal, and to notify the user of any connection failure.

3・・・・・・不一致検出回路、4・・・・・・AND
ゲート、31・・・・・・遅延回路、32・・・・・・
排他的論理和ゲート、33・・・・・・NANDゲート
、Gl、G2・・・・・・ゲート回路、11〜工5・・
・・・・インバータ、Tl、T2・・・・・・トランジ
スタ、TM、・・・・・・出力端子。
3... Mismatch detection circuit, 4... AND
Gate, 31...Delay circuit, 32...
Exclusive OR gate, 33...NAND gate, Gl, G2...Gate circuit, 11-Step 5...
...Inverter, Tl, T2...Transistor, TM, ...Output terminal.

Claims (1)

【特許請求の範囲】[Claims] 伝達されたデータを所定のタイミングでラッチし出力す
るラッチ回路と、出力制御信号が第1のレベルのとき前
記ラッチ回路の出力データを出力端子へ伝達し、第2の
レベルのとき出力インピーダンスが高インピーダンスと
なる出力バッファ回路と、前記ラッチ回路の出力データ
と前記出力端子のデータとを比較し不一致のとき不一致
検出信号を出力する不一致検出回路と、前記不一致検出
信号が出力されたとき前記出力バッファ回路の出力イン
ピーダンスを高インピーダンスとする制御手段とを有す
ることを特徴とする半導体集積回路装置。
A latch circuit that latches and outputs transmitted data at a predetermined timing; and a latch circuit that transmits the output data of the latch circuit to an output terminal when the output control signal is at a first level, and whose output impedance is high when the output control signal is at a second level. an output buffer circuit serving as an impedance; a mismatch detection circuit that compares the output data of the latch circuit with the data of the output terminal and outputs a mismatch detection signal when they do not match; and a mismatch detection circuit that outputs a mismatch detection signal when the mismatch detection signal is output; 1. A semiconductor integrated circuit device comprising: control means for setting the output impedance of the circuit to a high impedance.
JP1206198A 1989-08-08 1989-08-08 Semiconductor integrated circuit device Pending JPH0369209A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1206198A JPH0369209A (en) 1989-08-08 1989-08-08 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1206198A JPH0369209A (en) 1989-08-08 1989-08-08 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPH0369209A true JPH0369209A (en) 1991-03-25

Family

ID=16519419

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1206198A Pending JPH0369209A (en) 1989-08-08 1989-08-08 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPH0369209A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007267194A (en) * 2006-03-29 2007-10-11 Fujitsu Ltd Input/output device and method of controlling same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57125525A (en) * 1981-01-28 1982-08-04 Nec Corp Logical circuit
JPS57178425A (en) * 1981-04-10 1982-11-02 Tektronix Inc Protecting circuit for data driver
JPH01117541A (en) * 1987-10-30 1989-05-10 Fujitsu Ltd Bus fight prevention circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57125525A (en) * 1981-01-28 1982-08-04 Nec Corp Logical circuit
JPS57178425A (en) * 1981-04-10 1982-11-02 Tektronix Inc Protecting circuit for data driver
JPH01117541A (en) * 1987-10-30 1989-05-10 Fujitsu Ltd Bus fight prevention circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007267194A (en) * 2006-03-29 2007-10-11 Fujitsu Ltd Input/output device and method of controlling same

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