JPH0362959A - Manufacture of lead frame - Google Patents
Manufacture of lead frameInfo
- Publication number
- JPH0362959A JPH0362959A JP1198873A JP19887389A JPH0362959A JP H0362959 A JPH0362959 A JP H0362959A JP 1198873 A JP1198873 A JP 1198873A JP 19887389 A JP19887389 A JP 19887389A JP H0362959 A JPH0362959 A JP H0362959A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- resin
- coupling agent
- lead
- silane coupling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000000034 method Methods 0.000 claims description 24
- 238000005859 coupling reaction Methods 0.000 claims description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000000465 moulding Methods 0.000 claims 1
- 230000037452 priming Effects 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- 239000011347 resin Substances 0.000 abstract description 28
- 229920005989 resin Polymers 0.000 abstract description 28
- 238000007789 sealing Methods 0.000 abstract description 16
- 239000006087 Silane Coupling Agent Substances 0.000 abstract description 10
- 239000000463 material Substances 0.000 abstract description 8
- 238000007747 plating Methods 0.000 abstract description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 abstract description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 abstract description 6
- 239000007822 coupling agent Substances 0.000 abstract description 5
- 239000004809 Teflon Substances 0.000 abstract description 2
- 229920006362 Teflon® Polymers 0.000 abstract description 2
- 238000003754 machining Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000003064 anti-oxidating effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical group CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000005641 methacryl group Chemical group 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明はリードフレームの製造方法に係り、特に樹脂封
止を完全にするためのリードフレームの表面処理に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Field of Application) The present invention relates to a method for manufacturing a lead frame, and particularly to surface treatment of a lead frame to complete resin sealing.
（従来の技術）
半導体素子の実装方法としては、封止用のパッケージ材
料として金属を用いる方法、セラミックを用いる方法、
樹脂を用いる方法等がある。(Prior art) Methods for mounting semiconductor elements include methods using metal as a package material for sealing, methods using ceramics,
There are methods such as using resin.
これらの方法のうち、樹脂を用いる方法では、例えば、
第４図に示すように、リードフレーム１のダイパッド２
に、半導体素子３を固着し、この半導体索子３のポンデ
ィングパッドとリードフレームのインナーリード４とを
金線あるいはアルミ線のボンディングワイヤ５によって
結線し、更にこれらを樹脂パッケージ６内に封止するこ
とにより製造されている。Among these methods, methods using resin include, for example,
As shown in FIG. 4, the die pad 2 of the lead frame 1
Then, the semiconductor element 3 is fixed, the bonding pads of the semiconductor cable 3 and the inner leads 4 of the lead frame are connected with bonding wires 5 made of gold wire or aluminum wire, and these are further sealed in a resin package 6. It is manufactured by
また、ここで用いられるリードフレームは、第５図に１
例を示す如く、半導体素子を搭載するためのダイパッド
２と、先端が該ダイパッドをとり囲む上うに延在せしめ
られたインナーリード４と、該インナーリードとほぼ直
交する方向に延びこれらインナーリードを一体的に支持
するタイバー７と、該タイバーの外側に前記各インナー
リードに接続するように配設せしめられたアウターリー
ド８とダイパッド２を支持するサポートパー９とから構
成される装置
↑のような樹脂による封止方法は、安価てがっ実装作業
性が良好であることから、広く利用されている。The lead frame used here is shown in Figure 5.
As shown in the example, a die pad 2 for mounting a semiconductor element, an inner lead 4 whose tip extends upward surrounding the die pad, and an inner lead 4 which extends in a direction substantially perpendicular to the inner lead and integrates these inner leads. A device made of a tie bar 7 that supports the die pad 2, an outer lead 8 disposed on the outside of the tie bar so as to be connected to each inner lead, and a support par 9 that supports the die pad 2. This sealing method is widely used because it is inexpensive and has good mounting workability.
このとき、樹脂封止は完全パッケージではないため、樹
脂とリードフレーム材料との熱膨張率の違いにより、リ
ードフレームと樹脂パッケージとの間に間隙が生じ、こ
こから水分がパッケージ内に侵入し、半導体素子の特性
の劣化を生じたり、また特性の劣化を生じないまでもリ
ードフレームのダイパッドと樹脂との界面に水分がたま
るなどの問題があった。At this time, resin sealing is not a complete package, and due to the difference in thermal expansion coefficient between the resin and the lead frame material, a gap is created between the lead frame and the resin package, from which moisture can enter the package. There have been problems such as deterioration of the characteristics of the semiconductor element, and even if there is no deterioration of the characteristics, moisture accumulates at the interface between the die pad of the lead frame and the resin.
ところで、現在のＩＣパッケージ、特にＳＯＪやＱＦＰ
などの表面実装パッケージは、半田付は等方法による回
路への装着に際し、高温雰囲気にさらされる。By the way, current IC packages, especially SOJ and QFP
Surface mount packages, such as those exposed to high-temperature atmospheres, are exposed to high-temperature atmospheres when they are attached to circuits by methods such as soldering.
この熱により、このダイパッドの裏面側に付着した水分
が気化膨脹し、樹脂パッケージにクラックを生じる等の
問題があった。Due to this heat, moisture adhering to the back side of the die pad evaporates and expands, causing problems such as cracks in the resin package.
また、リードフレーム素材が銅を主成分とするものであ
る場合、表面に酸化膜が生じ、これがリードフレームと
樹脂パッケージとの間の密着性を低下させる原因となっ
ていた。Further, when the lead frame material has copper as its main component, an oxide film is formed on the surface, which causes a decrease in the adhesion between the lead frame and the resin package.
そこで、封止樹脂とリードフレームとの密着性を向上す
るために、リードフレームの表面および裏面を粗面化し
たり、インナーリードの一部にアンカーホールと呼ばれ
る小孔をあけ、樹脂を充填させるなどの対策が行われて
いるが、リードフレームの寸法精度が低下し、歩留まり
が悪くなるという欠点があった。Therefore, in order to improve the adhesion between the sealing resin and the lead frame, the front and back surfaces of the lead frame may be roughened, or a small hole called an anchor hole may be made in a part of the inner lead and filled with resin. Although countermeasures have been taken, there has been a drawback that the dimensional accuracy of the lead frame decreases and the yield rate deteriorates.
さらに、鋼材の酸化防止のために表面をニッケルめっき
層で被覆する方法も提案されているが、半導体装置組み
立て後、アウターリードのハンダデイツプ工程の直°前
でニッケルめっき層を剥離する必要があるなど製造コス
トの上昇につながるという問題があった。Furthermore, a method has been proposed in which the surface of steel is coated with a nickel plating layer to prevent oxidation, but this requires peeling off the nickel plating layer immediately before the solder dip process for the outer leads after semiconductor device assembly. There was a problem in that it led to an increase in manufacturing costs.
（発明が解決しようとする課題）
このように、樹脂封止型半導体装置用のリードフレーム
においては、封止樹脂とリードフレームとの密着性があ
まりよくないため、信頼性の低下の原因となっていた。(Problem to be Solved by the Invention) As described above, in lead frames for resin-encapsulated semiconductor devices, the adhesion between the encapsulating resin and the lead frame is not very good, which causes a decrease in reliability. was.
本発明は、前記実情に鑑みてなされたもので、封止樹脂
との密着性が高く、経時的変化が小さく信頼性の高いリ
ードフレームを提供することを目的とする。The present invention has been made in view of the above-mentioned circumstances, and an object of the present invention is to provide a highly reliable lead frame that has high adhesion to a sealing resin and has little change over time.
（課題を解決するための手段）
そこで本発明では、リードフレームの形状加工後、必要
に応じてメツキを行った後、ボンディングエリアおよび
アウターリードを除く少なくともパッケージライン近傍
をシランカップリング剤でプライマー処理するようにし
ている。(Means for Solving the Problems) Therefore, in the present invention, after processing the shape of the lead frame and plating as necessary, at least the vicinity of the package line, excluding the bonding area and outer leads, is treated with a primer using a silane coupling agent. I try to do that.
ここで、シランカップリング剤とは、分子中に、メトキ
シ基、エポキシ基、セロソルブ基等の無機質と化学結合
する反応基と、ビニル基、エポキシ基、メタクリル基、
アミノ基、メルカプト基等の有機材料と化学結合する反
応基とを具備した有機ケイ素単量体をいう。Here, the silane coupling agent refers to a reactive group that chemically bonds with an inorganic substance such as a methoxy group, an epoxy group, a cellosolve group, and a vinyl group, an epoxy group, a methacryl group,
An organosilicon monomer that has a reactive group that chemically bonds with an organic material, such as an amino group or a mercapto group.
（作用）
本発明の方法によれば、リードフレームをシランカップ
リング剤でプライマー処理するようにしているため、実
装に際し、樹脂封止工程において、リードフレーム表面
に形成されたカップリング剤の被膜が樹脂およびリード
フレーム表面の両方に対してカップリング反応を起こし
、リードフレーム表面と樹脂との間に中間物質が生成さ
れ、密着性が大幅に向上する。(Function) According to the method of the present invention, since the lead frame is primed with a silane coupling agent, the coating of the coupling agent formed on the surface of the lead frame is removed during the resin sealing process during mounting. A coupling reaction occurs on both the resin and the lead frame surface, and an intermediate substance is generated between the lead frame surface and the resin, greatly improving adhesion.
さらにまた、銅素材のリードフレームにおいてもこのカ
ップリング剤の被膜が酸化防止作用をもつため、ニッケ
ルメッキの必要もなく、従ってハンダデイツプ工程に先
立ち剥離する必要もない。Furthermore, since the coating of this coupling agent has an anti-oxidation effect even on lead frames made of copper, there is no need for nickel plating, and therefore no need for stripping prior to the solder dipping process.
（実施例）
以下、本発明の実施例について、図面を参照しつつ詳細
に説明する。(Example) Hereinafter, examples of the present invention will be described in detail with reference to the drawings.
第１図は、本発明実施例のリードフレームの製造工程を
示すフローチャート図である（図中ステップ１０４．１
０５はこのリードフレームを用いた実装工程を示す）。FIG. 1 is a flowchart showing the manufacturing process of a lead frame according to an embodiment of the present invention (step 104.1 in the figure).
05 shows the mounting process using this lead frame).
まず、第２図（ａ）に示すように、スタンピング法ある
いはエツチング法により、鉄−ニッケル（Ｆｅ−Ｎｉ）
合金からなる帯状材料を加］二し、リードフレーム１を
形成する（ステップ１ｏ１）。First, as shown in Figure 2(a), iron-nickel (Fe-Ni) is etched by stamping or etching.
A strip material made of an alloy is added to form a lead frame 1 (step 1o1).
次いで、第２図（ｂ）に示すように、コイニング処理を
行い、インナ−リード４先端部の平担幅を確保したのち
、先端部にめっきＭを行う（ステップ１０２）。Next, as shown in FIG. 2(b), a coining process is performed to ensure the flat width of the tip of the inner lead 4, and then plating M is applied to the tip (step 102).
さらに、第２図（Ｃ）に示すように、このリードフレー
ムをテフロン製のラックに載置し、全体を、ヘキサンと
イソプロピルアルコールにシランカップリング剤を数％
溶かしたプライマー溶液に、数秒間浸漬したのち、常温
で４〜５時間放置して乾燥し、表面に膜厚式オーダーの
被膜１０を形成する。このとき、アウターリード先端部
の半田付は領域はシランカップリング剤に浸漬されない
ようにするか、またはマスクで被覆した状態で浸漬する
ようにする。図中斜線で示した領域「１は表面側のプラ
イマー処理領域を示し、裏面側はパッケージエリア全域
においてプライマー処理を行う（ステップ１０３）。Furthermore, as shown in Figure 2 (C), this lead frame was placed on a Teflon rack, and the whole was mixed with several percent silane coupling agent in hexane and isopropyl alcohol.
After being immersed in the dissolved primer solution for a few seconds, it is left to stand at room temperature for 4 to 5 hours to dry, forming a film 10 on the order of film thickness on the surface. At this time, when soldering the tips of the outer leads, the area should not be immersed in the silane coupling agent, or the area should be immersed while being covered with a mask. The shaded area "1" in the figure indicates the primer treatment area on the front side, and the entire package area on the back side is subjected to primer treatment (step 103).
このようにしてプライマー処理が施され、封止樹脂との
密着性が高く、信頼性の高いリードフレームが完成する
。In this way, primer treatment is performed, and a highly reliable lead frame with high adhesion to the sealing resin is completed.
次に、このリードフレームを用いた半導体装置の実装工
程について説明する。Next, a process for mounting a semiconductor device using this lead frame will be described.
まず、第３図（ａ）に示すように、プライマー処理が施
され被膜１０の形成されたリードフレームのダイパッド
２上に半導体素子チップ３を固着し、各インナ−リード
４先端部のボンディングエリアと半導体素子チップ３の
ポンディングパッドとをワイヤボンディング法によりワ
イヤ５を介して結線する（第３図（ｂ））（ステップ１
０４）。First, as shown in FIG. 3(a), the semiconductor element chip 3 is fixed onto the die pad 2 of the lead frame which has been subjected to primer treatment and the coating 10 has been formed, and the bonding area at the tip of each inner lead 4 is fixed. The bonding pad of the semiconductor element chip 3 is connected via the wire 5 by the wire bonding method (FIG. 3(b)) (Step 1)
04).
そして、第３図（Ｃ）に示すように、樹脂封止を行い、
アウターリード先端部を残して該リードフレーム構体を
封止する。Then, as shown in FIG. 3(C), resin sealing is performed,
The lead frame structure is sealed leaving the outer lead tips intact.
最後に、タイバー７を切除し、アウターリード８の先端
を分離すると共に、所望の方向に折り曲げ成型し、第３
図 （ｄ）に示すように、半導体装置が完成する。Finally, the tie bar 7 is cut out, the tip of the outer lead 8 is separated, and the third
As shown in Figure (d), the semiconductor device is completed.
このようにして形成された半導体装置では、封止領域の
リードフレーム構体全体がシランカップリング剤の被膜
で覆われた状態で、樹脂封止がなされるため、このシラ
ンカップリング剤と封止樹脂およびリードフレーム表面
とが反応し、界面に中間物質が生成された状態で封止が
なされているため、極めて密着性が良好であり耐湿性が
大幅に向上する。In a semiconductor device formed in this way, resin sealing is performed with the entire lead frame structure in the sealing area covered with a film of silane coupling agent, so this silane coupling agent and sealing resin Since the lead frame reacts with the surface of the lead frame and is sealed with an intermediate substance generated at the interface, the adhesion is extremely good and the moisture resistance is greatly improved.
なお、前記実施例ではリードフレーム素材として、鉄−
ニッケル合金を用いたが、その池の材料を用いても良い
ことはいうまでもない。例えばリードフレーム素材とし
て、銅を用いた場合、このカップリング剤の被膜が酸化
防止作用をもつため、従来は銅の場合不可欠であったニ
ッケルメッキの必要もなく、従ってハンダデイツプ工程
に先立ち剥離する必要もない。In the above embodiment, iron is used as the lead frame material.
Although nickel alloy was used, it goes without saying that other materials may be used. For example, when copper is used as the lead frame material, the coating of this coupling agent has an anti-oxidation effect, so there is no need for nickel plating, which was previously essential for copper, and therefore there is no need to peel it off before the solder dip process. Nor.
以上説明してきたように、本発明の方法によれば、リー
ドフレームをカップリング剤に浸漬するようにしている
ため、封ＩＥ樹脂とリードフレームとの密着性が向上し
、耐湿性が良好で信頼性の高い半導体装置を得ることが
できる。As explained above, according to the method of the present invention, since the lead frame is immersed in the coupling agent, the adhesion between the sealing IE resin and the lead frame is improved, and moisture resistance is good and reliability is achieved. A semiconductor device with high performance can be obtained.
特に、近年パッケージの薄型化が急速に進められており
、使用目的も多様化し、今までにない特性が要求されて
いるが、本発明の方法により、封止樹脂とリードフレー
ムの密着性が向上することにより、パッケージ自体の強
度が飛躍的に上昇するという効果が奏功される。In particular, in recent years, packages have been rapidly becoming thinner, the purposes of use are diversifying, and unprecedented properties are required.The method of the present invention improves the adhesion between the sealing resin and the lead frame. By doing so, the strength of the package itself can be dramatically increased.
第１図は本発明実施例のリードフレームの製造工程を示
すフローチャート図、第２図は同リードフレームの製造
工程を示す図、第３図（ａ）乃至第３図（ｄ）は同リー
ドフレームを用いた半導体装置の実装工程を示す図、第
４図は従来例の半導体装置の実装状態を示す説明図、第
５図は従来例のリードフレームを示す図である。
１・・・リードフレーム、２・・・ダイパッド、３・・
・半導体素子、４・・・インナーリード、５・・・ボン
ディングワイヤ、６・・・樹脂、７・・・タイバー ８
・・・アウターリード、９・・・サポートパー １０・
・・シランカップリング剤被膜。
第１図
第２図（Ｑ）
第２図（ｂ）
第２図
（Ｃ）
第３図（Ｇ）
第３図（ｂ）
第３図（Ｃ）
第３図（ｄ）Fig. 1 is a flowchart showing the manufacturing process of the lead frame according to the embodiment of the present invention, Fig. 2 is a diagram showing the manufacturing process of the lead frame, and Figs. 3(a) to 3(d) are the same lead frame. FIG. 4 is an explanatory diagram showing the mounting state of a conventional semiconductor device, and FIG. 5 is a diagram showing a conventional lead frame. 1...Lead frame, 2...Die pad, 3...
・Semiconductor element, 4... Inner lead, 5... Bonding wire, 6... Resin, 7... Tie bar 8
...Outer lead, 9...Support par 10.
... Silane coupling agent coating. Figure 1 Figure 2 (Q) Figure 2 (b) Figure 2 (C) Figure 3 (G) Figure 3 (b) Figure 3 (C) Figure 3 (d)
Claims (1)
成形工程と、 ボンディングエリアおよびアウターリードを除くパッケ
ージ領域およびパッケージエリア内のリードフレーム裏
面をシランカップリングでプライマー処理する処理工程
とを含むことを特徴とするリードフレームの製造方法。[Claims] A molding process of processing the lead frame into a desired shape, and a treatment process of priming the package area excluding the bonding area and outer leads and the backside of the lead frame within the package area with silane coupling. A method for manufacturing a lead frame, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1198873A JPH0834276B2 (en) | 1989-07-31 | 1989-07-31 | Lead frame manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1198873A JPH0834276B2 (en) | 1989-07-31 | 1989-07-31 | Lead frame manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0362959A true JPH0362959A (en) | 1991-03-19 |
| JPH0834276B2 JPH0834276B2 (en) | 1996-03-29 |
Family
ID=16398341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1198873A Expired - Fee Related JPH0834276B2 (en) | 1989-07-31 | 1989-07-31 | Lead frame manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0834276B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995012895A1 (en) * | 1993-11-04 | 1995-05-11 | Nitto Denko Corporation | Process for producing semiconductor element and pressure-sensitive adhesive sheet for sticking wafer |
| JPH08167686A (en) * | 1994-07-02 | 1996-06-25 | Anam Ind Co Inc | Manufacture of electronic-device package |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56164564A (en) * | 1980-05-21 | 1981-12-17 | Hitachi Ltd | Semiconductor device |
| JPS57152157A (en) * | 1981-03-16 | 1982-09-20 | Nec Corp | Semiconductor device |
| JPS59134861A (en) * | 1983-01-21 | 1984-08-02 | Hitachi Ltd | Surface treating device |
| JPS63207148A (en) * | 1987-02-24 | 1988-08-26 | Fujitsu Ltd | Master slice semiconductor integrated circuit |
-
1989
- 1989-07-31 JP JP1198873A patent/JPH0834276B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56164564A (en) * | 1980-05-21 | 1981-12-17 | Hitachi Ltd | Semiconductor device |
| JPS57152157A (en) * | 1981-03-16 | 1982-09-20 | Nec Corp | Semiconductor device |
| JPS59134861A (en) * | 1983-01-21 | 1984-08-02 | Hitachi Ltd | Surface treating device |
| JPS63207148A (en) * | 1987-02-24 | 1988-08-26 | Fujitsu Ltd | Master slice semiconductor integrated circuit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995012895A1 (en) * | 1993-11-04 | 1995-05-11 | Nitto Denko Corporation | Process for producing semiconductor element and pressure-sensitive adhesive sheet for sticking wafer |
| JPH08167686A (en) * | 1994-07-02 | 1996-06-25 | Anam Ind Co Inc | Manufacture of electronic-device package |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0834276B2 (en) | 1996-03-29 |
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