JPH0362026B2 - - Google Patents
Info
- Publication number
- JPH0362026B2 JPH0362026B2 JP58119471A JP11947183A JPH0362026B2 JP H0362026 B2 JPH0362026 B2 JP H0362026B2 JP 58119471 A JP58119471 A JP 58119471A JP 11947183 A JP11947183 A JP 11947183A JP H0362026 B2 JPH0362026 B2 JP H0362026B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate electrode
- conductivity type
- contact
- igfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- 238000002513 implantation Methods 0.000 claims description 8
- 238000009825 accumulation Methods 0.000 claims description 6
- 239000000969 carrier Substances 0.000 description 8
- 239000007943 implant Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/63—Vertical IGFETs
- H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3224618.8 | 1982-07-01 | ||
| DE19823224618 DE3224618A1 (de) | 1982-07-01 | 1982-07-01 | Igfet mit ladungstraegerinjektion |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5921069A JPS5921069A (ja) | 1984-02-02 |
| JPH0362026B2 true JPH0362026B2 (en, 2012) | 1991-09-24 |
Family
ID=6167358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58119471A Granted JPS5921069A (ja) | 1982-07-01 | 1983-06-30 | 半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4584593A (en, 2012) |
| EP (1) | EP0098497A3 (en, 2012) |
| JP (1) | JPS5921069A (en, 2012) |
| DE (1) | DE3224618A1 (en, 2012) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2165090A (en) * | 1984-09-26 | 1986-04-03 | Philips Electronic Associated | Improving the field distribution in high voltage semiconductor devices |
| EP0176753A1 (de) * | 1984-09-27 | 1986-04-09 | Siemens Aktiengesellschaft | Darlington-Schaltung mit einem Feldeffekttransistor und einen bipolaren Ausgangstransistor |
| US4779123A (en) * | 1985-12-13 | 1988-10-18 | Siliconix Incorporated | Insulated gate transistor array |
| US5047812A (en) * | 1989-02-27 | 1991-09-10 | Motorola, Inc. | Insulated gate field effect device |
| GB9313843D0 (en) * | 1993-07-05 | 1993-08-18 | Philips Electronics Uk Ltd | A semiconductor device comprising an insulated gate field effect transistor |
| JPH10256550A (ja) * | 1997-01-09 | 1998-09-25 | Toshiba Corp | 半導体装置 |
| DE19808348C1 (de) * | 1998-02-27 | 1999-06-24 | Siemens Ag | Durch Feldeffekt steuerbares Halbleiterbauelement |
| US6953919B2 (en) | 2003-01-30 | 2005-10-11 | Thermal Solutions, Inc. | RFID-controlled smart range and method of cooking and heating |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3831187A (en) * | 1973-04-11 | 1974-08-20 | Rca Corp | Thyristor having capacitively coupled control electrode |
| US4048649A (en) * | 1976-02-06 | 1977-09-13 | Transitron Electronic Corporation | Superintegrated v-groove isolated bipolar and vmos transistors |
| JPS52132684A (en) * | 1976-04-29 | 1977-11-07 | Sony Corp | Insulating gate type field effect transistor |
| JPS5370679A (en) * | 1976-12-06 | 1978-06-23 | Nippon Gakki Seizo Kk | Transistor |
| US4199774A (en) * | 1978-09-18 | 1980-04-22 | The Board Of Trustees Of The Leland Stanford Junior University | Monolithic semiconductor switching device |
| JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
| JPS55140262A (en) * | 1979-04-19 | 1980-11-01 | Nippon Gakki Seizo Kk | Semiconductor device |
| US4364073A (en) * | 1980-03-25 | 1982-12-14 | Rca Corporation | Power MOSFET with an anode region |
| US4345265A (en) * | 1980-04-14 | 1982-08-17 | Supertex, Inc. | MOS Power transistor with improved high-voltage capability |
| US4344081A (en) * | 1980-04-14 | 1982-08-10 | Supertex, Inc. | Combined DMOS and a vertical bipolar transistor device and fabrication method therefor |
| DE3018468A1 (de) * | 1980-05-14 | 1981-11-19 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbaren emitterkurzschluessen und verfahren zu seinem betrieb |
| DE3019883A1 (de) * | 1980-05-23 | 1981-12-03 | Siemens AG, 1000 Berlin und 8000 München | Zweirichtungsthyristor |
| US4300150A (en) * | 1980-06-16 | 1981-11-10 | North American Philips Corporation | Lateral double-diffused MOS transistor device |
| US4414560A (en) * | 1980-11-17 | 1983-11-08 | International Rectifier Corporation | Floating guard region and process of manufacture for semiconductor reverse conducting switching device using spaced MOS transistors having a common drain region |
| US4402003A (en) * | 1981-01-12 | 1983-08-30 | Supertex, Inc. | Composite MOS/bipolar power device |
| US4441117A (en) * | 1981-07-27 | 1984-04-03 | Intersil, Inc. | Monolithically merged field effect transistor and bipolar junction transistor |
-
1982
- 1982-07-01 DE DE19823224618 patent/DE3224618A1/de not_active Withdrawn
-
1983
- 1983-06-27 EP EP83106249A patent/EP0098497A3/de not_active Withdrawn
- 1983-06-30 JP JP58119471A patent/JPS5921069A/ja active Granted
- 1983-06-30 US US06/510,080 patent/US4584593A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0098497A2 (de) | 1984-01-18 |
| DE3224618A1 (de) | 1984-01-05 |
| JPS5921069A (ja) | 1984-02-02 |
| EP0098497A3 (de) | 1986-04-09 |
| US4584593A (en) | 1986-04-22 |
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