JPH0362026B2 - - Google Patents
Info
- Publication number
- JPH0362026B2 JPH0362026B2 JP58119471A JP11947183A JPH0362026B2 JP H0362026 B2 JPH0362026 B2 JP H0362026B2 JP 58119471 A JP58119471 A JP 58119471A JP 11947183 A JP11947183 A JP 11947183A JP H0362026 B2 JPH0362026 B2 JP H0362026B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate electrode
- conductivity type
- contact
- igfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- 238000002513 implantation Methods 0.000 claims description 8
- 238000009825 accumulation Methods 0.000 claims description 6
- 239000000969 carrier Substances 0.000 description 8
- 239000007943 implant Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
- H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3224618.8 | 1982-07-01 | ||
DE19823224618 DE3224618A1 (de) | 1982-07-01 | 1982-07-01 | Igfet mit ladungstraegerinjektion |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5921069A JPS5921069A (ja) | 1984-02-02 |
JPH0362026B2 true JPH0362026B2 (US08177716-20120515-C00003.png) | 1991-09-24 |
Family
ID=6167358
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58119471A Granted JPS5921069A (ja) | 1982-07-01 | 1983-06-30 | 半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4584593A (US08177716-20120515-C00003.png) |
EP (1) | EP0098497A3 (US08177716-20120515-C00003.png) |
JP (1) | JPS5921069A (US08177716-20120515-C00003.png) |
DE (1) | DE3224618A1 (US08177716-20120515-C00003.png) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2165090A (en) * | 1984-09-26 | 1986-04-03 | Philips Electronic Associated | Improving the field distribution in high voltage semiconductor devices |
EP0176753A1 (de) * | 1984-09-27 | 1986-04-09 | Siemens Aktiengesellschaft | Darlington-Schaltung mit einem Feldeffekttransistor und einen bipolaren Ausgangstransistor |
US4779123A (en) * | 1985-12-13 | 1988-10-18 | Siliconix Incorporated | Insulated gate transistor array |
US5047812A (en) * | 1989-02-27 | 1991-09-10 | Motorola, Inc. | Insulated gate field effect device |
GB9313843D0 (en) * | 1993-07-05 | 1993-08-18 | Philips Electronics Uk Ltd | A semiconductor device comprising an insulated gate field effect transistor |
JPH10256550A (ja) * | 1997-01-09 | 1998-09-25 | Toshiba Corp | 半導体装置 |
DE19808348C1 (de) | 1998-02-27 | 1999-06-24 | Siemens Ag | Durch Feldeffekt steuerbares Halbleiterbauelement |
US6953919B2 (en) | 2003-01-30 | 2005-10-11 | Thermal Solutions, Inc. | RFID-controlled smart range and method of cooking and heating |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3831187A (en) * | 1973-04-11 | 1974-08-20 | Rca Corp | Thyristor having capacitively coupled control electrode |
US4048649A (en) * | 1976-02-06 | 1977-09-13 | Transitron Electronic Corporation | Superintegrated v-groove isolated bipolar and vmos transistors |
JPS52132684A (en) * | 1976-04-29 | 1977-11-07 | Sony Corp | Insulating gate type field effect transistor |
JPS5370679A (en) * | 1976-12-06 | 1978-06-23 | Nippon Gakki Seizo Kk | Transistor |
US4199774A (en) * | 1978-09-18 | 1980-04-22 | The Board Of Trustees Of The Leland Stanford Junior University | Monolithic semiconductor switching device |
JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
JPS55140262A (en) * | 1979-04-19 | 1980-11-01 | Nippon Gakki Seizo Kk | Semiconductor device |
US4364073A (en) * | 1980-03-25 | 1982-12-14 | Rca Corporation | Power MOSFET with an anode region |
US4345265A (en) * | 1980-04-14 | 1982-08-17 | Supertex, Inc. | MOS Power transistor with improved high-voltage capability |
US4344081A (en) * | 1980-04-14 | 1982-08-10 | Supertex, Inc. | Combined DMOS and a vertical bipolar transistor device and fabrication method therefor |
DE3018468A1 (de) * | 1980-05-14 | 1981-11-19 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbaren emitterkurzschluessen und verfahren zu seinem betrieb |
DE3019883A1 (de) * | 1980-05-23 | 1981-12-03 | Siemens AG, 1000 Berlin und 8000 München | Zweirichtungsthyristor |
US4300150A (en) * | 1980-06-16 | 1981-11-10 | North American Philips Corporation | Lateral double-diffused MOS transistor device |
US4414560A (en) * | 1980-11-17 | 1983-11-08 | International Rectifier Corporation | Floating guard region and process of manufacture for semiconductor reverse conducting switching device using spaced MOS transistors having a common drain region |
US4402003A (en) * | 1981-01-12 | 1983-08-30 | Supertex, Inc. | Composite MOS/bipolar power device |
US4441117A (en) * | 1981-07-27 | 1984-04-03 | Intersil, Inc. | Monolithically merged field effect transistor and bipolar junction transistor |
-
1982
- 1982-07-01 DE DE19823224618 patent/DE3224618A1/de not_active Withdrawn
-
1983
- 1983-06-27 EP EP83106249A patent/EP0098497A3/de not_active Withdrawn
- 1983-06-30 JP JP58119471A patent/JPS5921069A/ja active Granted
- 1983-06-30 US US06/510,080 patent/US4584593A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0098497A2 (de) | 1984-01-18 |
EP0098497A3 (de) | 1986-04-09 |
DE3224618A1 (de) | 1984-01-05 |
JPS5921069A (ja) | 1984-02-02 |
US4584593A (en) | 1986-04-22 |
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