JPH0359572B2 - - Google Patents
Info
- Publication number
- JPH0359572B2 JPH0359572B2 JP57135460A JP13546082A JPH0359572B2 JP H0359572 B2 JPH0359572 B2 JP H0359572B2 JP 57135460 A JP57135460 A JP 57135460A JP 13546082 A JP13546082 A JP 13546082A JP H0359572 B2 JPH0359572 B2 JP H0359572B2
- Authority
- JP
- Japan
- Prior art keywords
- insb
- thin film
- substrate temperature
- indium
- antimony
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 49
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 43
- 239000010409 thin film Substances 0.000 claims description 40
- 238000007740 vapor deposition Methods 0.000 claims description 21
- 230000008021 deposition Effects 0.000 claims description 20
- 229910052738 indium Inorganic materials 0.000 claims description 17
- 229910052785 arsenic Inorganic materials 0.000 claims description 15
- 229910052787 antimony Inorganic materials 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 10
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical group [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 9
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 5
- XSKUQABTDMBZCN-UHFFFAOYSA-N [Sb].[As].[In] Chemical compound [Sb].[As].[In] XSKUQABTDMBZCN-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 19
- 239000010408 film Substances 0.000 description 17
- 239000013078 crystal Substances 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- 150000001875 compounds Chemical class 0.000 description 10
- 229910000673 Indium arsenide Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000010445 mica Substances 0.000 description 2
- 229910052618 mica group Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02549—Antimonides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Hall/Mr Elements (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57135460A JPS5927519A (ja) | 1982-08-03 | 1982-08-03 | インジウム−アンチモン−ヒ素系化合物半導体薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57135460A JPS5927519A (ja) | 1982-08-03 | 1982-08-03 | インジウム−アンチモン−ヒ素系化合物半導体薄膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5927519A JPS5927519A (ja) | 1984-02-14 |
| JPH0359572B2 true JPH0359572B2 (fr) | 1991-09-11 |
Family
ID=15152225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57135460A Granted JPS5927519A (ja) | 1982-08-03 | 1982-08-03 | インジウム−アンチモン−ヒ素系化合物半導体薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5927519A (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4761300A (en) * | 1983-06-29 | 1988-08-02 | Stauffer Chemical Company | Method of vacuum depostion of pnictide films on a substrate using a pnictide bubbler and a sputterer |
| JP2669757B2 (ja) * | 1992-12-03 | 1997-10-29 | 日精樹脂工業株式会社 | 粉砕機及びそのクリーニング方法 |
| JP6088281B2 (ja) * | 2013-02-18 | 2017-03-01 | 旭化成株式会社 | 化合物半導体積層体及びその製造方法 |
-
1982
- 1982-08-03 JP JP57135460A patent/JPS5927519A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5927519A (ja) | 1984-02-14 |
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