JPH0359572B2 - - Google Patents

Info

Publication number
JPH0359572B2
JPH0359572B2 JP57135460A JP13546082A JPH0359572B2 JP H0359572 B2 JPH0359572 B2 JP H0359572B2 JP 57135460 A JP57135460 A JP 57135460A JP 13546082 A JP13546082 A JP 13546082A JP H0359572 B2 JPH0359572 B2 JP H0359572B2
Authority
JP
Japan
Prior art keywords
insb
thin film
substrate temperature
indium
antimony
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57135460A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5927519A (ja
Inventor
Keiji Kuboyama
Takeki Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Industry Co Ltd filed Critical Asahi Chemical Industry Co Ltd
Priority to JP57135460A priority Critical patent/JPS5927519A/ja
Publication of JPS5927519A publication Critical patent/JPS5927519A/ja
Publication of JPH0359572B2 publication Critical patent/JPH0359572B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3421—
    • H10P14/3422—

Landscapes

  • Inorganic Compounds Of Heavy Metals (AREA)
  • Physical Vapour Deposition (AREA)
  • Hall/Mr Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP57135460A 1982-08-03 1982-08-03 インジウム−アンチモン−ヒ素系化合物半導体薄膜の製造方法 Granted JPS5927519A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57135460A JPS5927519A (ja) 1982-08-03 1982-08-03 インジウム−アンチモン−ヒ素系化合物半導体薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57135460A JPS5927519A (ja) 1982-08-03 1982-08-03 インジウム−アンチモン−ヒ素系化合物半導体薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS5927519A JPS5927519A (ja) 1984-02-14
JPH0359572B2 true JPH0359572B2 (OSRAM) 1991-09-11

Family

ID=15152225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57135460A Granted JPS5927519A (ja) 1982-08-03 1982-08-03 インジウム−アンチモン−ヒ素系化合物半導体薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPS5927519A (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761300A (en) * 1983-06-29 1988-08-02 Stauffer Chemical Company Method of vacuum depostion of pnictide films on a substrate using a pnictide bubbler and a sputterer
JP2669757B2 (ja) * 1992-12-03 1997-10-29 日精樹脂工業株式会社 粉砕機及びそのクリーニング方法
JP6088281B2 (ja) * 2013-02-18 2017-03-01 旭化成株式会社 化合物半導体積層体及びその製造方法

Also Published As

Publication number Publication date
JPS5927519A (ja) 1984-02-14

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