JPH0358548B2 - - Google Patents

Info

Publication number
JPH0358548B2
JPH0358548B2 JP63056101A JP5610188A JPH0358548B2 JP H0358548 B2 JPH0358548 B2 JP H0358548B2 JP 63056101 A JP63056101 A JP 63056101A JP 5610188 A JP5610188 A JP 5610188A JP H0358548 B2 JPH0358548 B2 JP H0358548B2
Authority
JP
Japan
Prior art keywords
layer
emitter layer
main surface
region
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63056101A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63265466A (ja
Inventor
Takahiro Nagano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP63056101A priority Critical patent/JPS63265466A/ja
Publication of JPS63265466A publication Critical patent/JPS63265466A/ja
Publication of JPH0358548B2 publication Critical patent/JPH0358548B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices

Landscapes

  • Thyristors (AREA)
JP63056101A 1988-03-11 1988-03-11 ゲートターンオフサイリスタ Granted JPS63265466A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63056101A JPS63265466A (ja) 1988-03-11 1988-03-11 ゲートターンオフサイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63056101A JPS63265466A (ja) 1988-03-11 1988-03-11 ゲートターンオフサイリスタ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP1848478A Division JPS54111790A (en) 1978-02-22 1978-02-22 Semiconductor switchgear

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP22967292A Division JPH06120484A (ja) 1992-08-28 1992-08-28 ゲートターンオフサイリスタ

Publications (2)

Publication Number Publication Date
JPS63265466A JPS63265466A (ja) 1988-11-01
JPH0358548B2 true JPH0358548B2 (cs) 1991-09-05

Family

ID=13017711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63056101A Granted JPS63265466A (ja) 1988-03-11 1988-03-11 ゲートターンオフサイリスタ

Country Status (1)

Country Link
JP (1) JPS63265466A (cs)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5081290A (cs) * 1973-11-16 1975-07-01
JPS5525508B2 (cs) * 1974-03-27 1980-07-07
JPS5626986B2 (cs) * 1974-05-17 1981-06-22
JPS5510143B2 (cs) * 1974-05-20 1980-03-14
JPS51138389A (en) * 1975-05-27 1976-11-29 Toyo Electric Mfg Co Ltd Thyristor
JPS5261971A (en) * 1975-11-18 1977-05-21 Toshiba Corp Control of turn-off time of silicon controlled rectifying element
JPS54111790A (en) * 1978-02-22 1979-09-01 Hitachi Ltd Semiconductor switchgear

Also Published As

Publication number Publication date
JPS63265466A (ja) 1988-11-01

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