JPH035668B2 - - Google Patents
Info
- Publication number
- JPH035668B2 JPH035668B2 JP644383A JP644383A JPH035668B2 JP H035668 B2 JPH035668 B2 JP H035668B2 JP 644383 A JP644383 A JP 644383A JP 644383 A JP644383 A JP 644383A JP H035668 B2 JPH035668 B2 JP H035668B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode contact
- insulating film
- shaped
- conductivity type
- contact window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 13
- 239000012535 impurity Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 101100521334 Mus musculus Prom1 gene Proteins 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- XUFQPHANEAPEMJ-UHFFFAOYSA-N famotidine Chemical group NC(N)=NC1=NC(CSCCC(N)=NS(N)(=O)=O)=CS1 XUFQPHANEAPEMJ-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58006443A JPS59132160A (ja) | 1983-01-18 | 1983-01-18 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58006443A JPS59132160A (ja) | 1983-01-18 | 1983-01-18 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59132160A JPS59132160A (ja) | 1984-07-30 |
| JPH035668B2 true JPH035668B2 (de) | 1991-01-28 |
Family
ID=11638542
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58006443A Granted JPS59132160A (ja) | 1983-01-18 | 1983-01-18 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59132160A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6034271B2 (ja) * | 1983-01-28 | 1985-08-07 | 三洋電機株式会社 | プログラマブルｒｏｍ |
| CA2729505C (en) * | 2006-12-22 | 2012-11-13 | Sidense Corp. | Dual function data register |
-
1983
- 1983-01-18 JP JP58006443A patent/JPS59132160A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59132160A (ja) | 1984-07-30 |
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