JPH0356533A - Production of resin for sealing - Google Patents
Production of resin for sealingInfo
- Publication number
- JPH0356533A JPH0356533A JP19151689A JP19151689A JPH0356533A JP H0356533 A JPH0356533 A JP H0356533A JP 19151689 A JP19151689 A JP 19151689A JP 19151689 A JP19151689 A JP 19151689A JP H0356533 A JPH0356533 A JP H0356533A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- bismaleimide
- formula
- formulas
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920005989 resin Polymers 0.000 title claims abstract description 38
- 239000011347 resin Substances 0.000 title claims abstract description 38
- 238000007789 sealing Methods 0.000 title claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 229920003192 poly(bis maleimide) Polymers 0.000 claims abstract description 17
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 claims abstract description 14
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000002844 melting Methods 0.000 claims abstract description 6
- 230000008018 melting Effects 0.000 claims abstract description 6
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 3
- 125000002947 alkylene group Chemical group 0.000 claims abstract description 3
- 125000003118 aryl group Chemical group 0.000 claims abstract description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract description 3
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 claims abstract description 3
- -1 polysiloxane Polymers 0.000 claims description 8
- 229920001296 polysiloxane Polymers 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 abstract description 11
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 abstract description 3
- 230000009477 glass transition Effects 0.000 abstract description 3
- 238000005336 cracking Methods 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- 239000003822 epoxy resin Substances 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 150000003923 2,5-pyrrolediones Chemical class 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 150000004985 diamines Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 239000006082 mold release agent Substances 0.000 description 2
- 239000012778 molding material Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- 241001098054 Pollachius pollachius Species 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000000805 composite resin Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011796 hollow space material Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229920000090 poly(aryl ether) Polymers 0.000 description 1
- 239000002685 polymerization catalyst Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（発明の利用分野）
本発明はガラス転移点（以下Ｔｇという）が高く、耐湿
性、相溶性に優れ、かつ低応力特性に優れた半導体封止
用樹脂の製造方法に関するものである。Detailed Description of the Invention (Field of Application of the Invention) The present invention provides a method for producing a resin for semiconductor encapsulation that has a high glass transition point (hereinafter referred to as Tg), excellent moisture resistance, compatibility, and low stress characteristics. It is related to.
（従来技術）
近年ＩＣ，ＬＳＩ，｝ランジスター、ダイオードなどの
半導体素子や電子回路等の封止には特性、コスト等の点
からエポキシ樹脂組成物が多量に、かつ最も一般的に用
いられている。(Prior art) In recent years, epoxy resin compositions have been used in large quantities and most commonly for encapsulating semiconductor elements such as ICs, LSIs, transistors, and diodes, and electronic circuits due to their characteristics, cost, etc. There is.
しかし、電子部品の量産性指向、高集積化や表面実装化
の方向に進んで来ておりこれに伴い封止樹脂に対する要
求は厳しくなってきている。However, as electronic components are becoming more mass-producible, more highly integrated, and more surface-mounted, demands on sealing resins are becoming more severe.
特に高集積化に伴うチップの大型化、パッケージの薄肉
化や表面実装時における半田浸漬（２００〜３００℃）
によって装置にクラックが発生し易くなっており信頼性
向上のために半導体封止用樹脂としては低応力特性と耐
熱性が強く望まれている。In particular, chips become larger due to higher integration, packages become thinner, and solder immersion (200 to 300℃) during surface mounting.
Therefore, in order to improve reliability, low stress characteristics and heat resistance are strongly desired for semiconductor encapsulation resins.
半導体封止用樹脂としては現在エポキシ樹脂が主流であ
るが耐湿性、低応力特性の点で未だ満足されるものは得
られていない。Currently, epoxy resins are the mainstream resin for semiconductor encapsulation, but no resin has yet been found that is satisfactory in terms of moisture resistance and low stress characteristics.
これらに対処するためにエポキシ系樹脂においてはシリ
コーン化合物等の添加やシリコーン変性エポキシ樹脂の
利用によって低応力特性をもたせる試みがなされている
が、耐熱性という点ではエボキシ樹脂を用いているかぎ
り、改良に限界があり、表面実装時の半田浸漬後の信頼
性の高いものが得られていない。To deal with these problems, attempts have been made to make epoxy resins have low stress characteristics by adding silicone compounds or using silicone-modified epoxy resins, but in terms of heat resistance, as long as epoxy resins are used, there are no improvements. There are limits to this, and high reliability after solder immersion during surface mounting has not been achieved.
これらの半田耐熱性に対処するには樹脂特性として低応
力であり、かつＴｇが高く半田浴温度以上であることが
望まれている。In order to cope with these solder heat resistance, it is desired that the resin properties be low stress and high Tg that is higher than the solder bath temperature.
エボキシ樹脂に変わる高耐熱性を有する樹脂としてはマ
レイミド樹脂が注目されてきているが、低応力特性に劣
り、堅くて脆いという欠点がある。Maleimide resins have been attracting attention as a resin with high heat resistance to replace epoxy resins, but they have the drawbacks of poor low stress properties, hardness, and brittleness.
ポリアミノマレイミド樹脂においては堅くて脆いという
欠点は改良されて来ているが、低応力特性の面では未だ
不十分である。Although the drawbacks of polyaminomaleimide resins such as hardness and brittleness have been improved, they are still insufficient in terms of low stress properties.
ポリマレイミドとアルケニルフェノール類またはアルケ
ニルフェノールエーテル類などを重合触媒存在下で反応
させる例（特開昭５２−９９４ ，特開昭５８−１１７
２１９号公報）やアリルエーテル化置換フェノール類／
ポラック樹脂とＮ，Ｎ ’−ビスマレイミド化合物から
なる樹脂組成物（特開昭６２−１１７１６，特開昭６２
−２２８１２，特開昭６２−２２８１３号公報）もある
が、ポリアミノマレイミド樹脂と同様に低応力特性に劣
る欠点がある。Examples of reacting polymaleimide with alkenylphenols or alkenylphenol ethers in the presence of a polymerization catalyst (JP-A-52-994, JP-A-58-117)
No. 219) and allyl etherified substituted phenols/
Resin composition consisting of pollack resin and N,N'-bismaleimide compound (JP-A-62-11716, JP-A-62
-22812, JP-A-62-22813), but like polyaminomaleimide resins, they have the disadvantage of poor low stress properties.
ポリアミノマレイミド樹脂を含むマレイミド樹脂の低応
力特性の改善策として各種シリコーン化合物の添加が試
みられているが相溶性が著しく劣り、相分離して、均質
な樹脂が得られない。Attempts have been made to add various silicone compounds as a measure to improve the low stress properties of maleimide resins including polyaminomaleimide resins, but the compatibility is extremely poor and phase separation occurs, making it impossible to obtain homogeneous resins.
とくに、シリコーンオイルを用いた場合にはオイルのプ
リードが生じるためにロール滑り、金型汚れを起こして
しまう。又シリコーンゴムを用いた場合には接着性が低
下してしまう。In particular, when silicone oil is used, oil bleed occurs, causing roll slippage and mold staining. Furthermore, when silicone rubber is used, adhesiveness is reduced.
又相溶性を向上さ♂るために末端に一〇Ｈ基、一〇ＣＨ
，基等の反応性基を持ったシリコーン化合物を添加する
例（Ｂｒｉｔ ＵＫ ＰＡＴ２０１８８０２（１９８４
），ＦＲ２５４４３２５，特開昭５７−９０８２７．５
６−２００２３．５７−９００１２．５８７４７４９号
公報）もあるが成形時にガスが発生し７クレを生じたり
、耐熱性や耐湿性の低下を招き満足のいく性能を発揮で
きていない。Also, in order to improve compatibility, 10H group and 10CH group are added at the end.
, an example of adding a silicone compound having a reactive group such as a group (Brit UK PAT2018802 (1984
), FR2544325, JP-A-57-90827.5
No. 6-20023.57-90012.5874749), but gas is generated during molding, resulting in cracking and deterioration of heat resistance and moisture resistance, resulting in unsatisfactory performance.
又、ビスマレイミドとジアミンとアミノ基含有ポリシロ
キサンとを溶液中で反応させる例（特開昭６２−２４６
９３３号公報）も試みられている。Also, an example of reacting bismaleimide, diamine, and amino group-containing polysiloxane in a solution (Japanese Patent Application Laid-Open No. 62-246
No. 933) has also been attempted.
しかし、無溶媒ではアミノ基含有ボリシロキサンとビス
マレイミド、ジアミンとの相溶性が悪く、均質な樹脂が
得られていない。However, in the absence of a solvent, the amino group-containing polysiloxane has poor compatibility with bismaleimide and diamine, and a homogeneous resin cannot be obtained.
溶剤を用いると相溶性は向上するが、反応終了時に溶剤
を完全に除去することは困難で、そのｔこめに貯蔵安定
性が低下したり、戊形時にガス、フクレなどが発生して
、実用上問題点が多く残る。The use of a solvent improves compatibility, but it is difficult to completely remove the solvent at the end of the reaction, leading to a decrease in storage stability and generation of gas and blisters during molding, making it impractical for practical use. Many problems remain.
（発明の目的）
本発明の目的とするところは相溶性が良く、一般の特性
を低下させることなく、耐湿性、低応力特性に優れ、か
つ高耐熱性を有し、半田浸漬後の信頼性に非常に優れた
半導体封止用樹脂の製造方法を提供することにある。(Objective of the Invention) The object of the present invention is to have good compatibility, excellent moisture resistance and low stress characteristics, high heat resistance, and high reliability after soldering immersion without deteriorating general characteristics. It is an object of the present invention to provide a method for producing a resin for semiconductor encapsulation which is extremely excellent in terms of performance.
（発明の構戊）
本発明は下記式〔Ｉ〕で示されるビスマレイミドと、下
記式ＣＩ！）で示されるジアミノポリシロキサンとを、
下記式〔Ｉ〕で示される多官能性ボリアリルエーテルフ
ェノール類の存在下で、生成樹脂の融点が５０〜１０２
゜Ｃとなるまで反応させることを特徴とする封止用樹脂
の製造方法である。(Structure of the Invention) The present invention provides bismaleimide represented by the following formula [I] and the following formula CI! ) in the presence of a polyfunctional polyaryl ether phenol represented by the following formula [I], the resulting resin has a melting point of 50 to 102
This is a method for producing a sealing resin, characterized in that the reaction is carried out until the temperature reaches °C.
（作用）
本発明において用いられるビスマレイミドは下記式ＣＩ
）で表される。(Function) The bismaleimide used in the present invention has the following formula CI
).
Ｒ．：２価の芳香族基
具体例としては、Ｎ．Ｎ ’−ｍ−７ ｘニレンビスマ
レイミド、Ｎ，Ｎ’−ｐ−７二二レンビスマレイミド、
Ｎ ＋ Ｎ ’−ｍ−トルイレンビスマレイミド、Ｎ，
Ｎ’−４．４’−ビフエニレンビスマレイミド、Ｎ．Ｎ
’−４．４ ’−（３．３ ’−ジメチルービ７エニ
レン〕ビスマレイミド、Ｎ，Ｎ ’−４ ．４ ’−（
３．３′−ジメチルジフェニルメタン〕ビスマレイミド
、Ｎ．Ｎ ’−４．４ ’−（３，３ ’−ジエチルジ
フエニルメタン〕ビスマレイミｌ’、Ｎ，Ｎ ’−４．
４ ’−ジフェニルメタンビスマレイミ｝’、Ｎ，Ｎ
’−４．４ ’−ジフエニルプロパンビスマレイミｌ’
、Ｎ，Ｎ ’−４．４ ’−ジフエニルエーテルビスマ
レイミ｝’、Ｎ，Ｎ ’−３．３ ’−ジフエニルスル
ホンビスマレイミＦ、Ｎ，Ｎ″−４．４″−ジフエニル
スルホンビスマレイミドなどを挙げることができる。こ
れらは２種以上含まれていても何ら差し支えない。R. : Specific examples of divalent aromatic groups include N. N'-m-7 x nylene bismaleimide, N,N'-p-7 nylene bismaleimide,
N + N'-m-toluylene bismaleimide, N,
N'-4.4'-biphenylene bismaleimide, N. N
'-4.4'-(3.3'-dimethyl-bi7enylene]bismaleimide, N,N'-4.4'-(
3.3'-dimethyldiphenylmethane]bismaleimide, N. N'-4.4'-(3,3'-diethyldiphenylmethane)bismaleimi', N,N'-4.
4'-diphenylmethane bismaleimi}', N, N
'-4.4'-diphenylpropane bismaleimi'
, N,N'-4.4'-diphenyl ether bismaleimi}', N,N'-3.3'-diphenyl sulfone bismaleimi F, N,N''-4.4'-diphenyl sulfone bis Examples include maleimide. There is no problem even if two or more of these are included.
本発明に用いられるジアミノポリシロキサンは下記式（
Ｉ［）で示されるポリシロキサンであり、その重合度ｎ
は１〜１００の範囲のものである。The diamino polysiloxane used in the present invention has the following formula (
It is a polysiloxane represented by I[), and its degree of polymerization n
ranges from 1 to 100.
Ｒ２：アルキレン基またはフエニレン基Ｒ，，Ｒ，：ア
ルキル基またはフェニル基重合度が１００以上の場合、
相溶性が低下してしまう。ジアミノボリシロキサンはビ
スマレイミド１００重量部に対し５〜５０重量部が好ま
しい。R2: Alkylene group or phenylene group R,,R,: Alkyl group or phenyl group When the degree of polymerization is 100 or more,
Compatibility will decrease. Diaminoborisiloxane is preferably used in an amount of 5 to 50 parts by weight per 100 parts by weight of bismaleimide.
５１ｔ量部以下では硬化樹脂の低応力効果が低下し、又
、５０１ｉ量部以上であれば相溶性が悪化し、強度が低
下する。If the amount is less than 51t parts, the low stress effect of the cured resin will decrease, and if it is more than 501i parts, the compatibility will deteriorate and the strength will decrease.
多官能性ボリアリルエーテルフェノール類は下記式（Ｉ
ＩＩ）で示され、その重合度ｍはＯ−１０の範囲である
。Polyfunctional polyallyl ether phenols have the following formula (I
II), and its degree of polymerization m is in the range of O-10.
一Ｓ○「
−と一〇一
マレイミド１００重量部に対し、１０−１００重量部が
好ましい。１０重量部以下であれば相溶性が低下し、ま
た１００重畳部以上であれば硬化樹脂の耐熱性が低下す
る。The amount is preferably 10-100 parts by weight per 100 parts by weight of 1S○'- and 101 maleimide.If it is less than 10 parts by weight, the compatibility will decrease, and if it is more than 100 parts by weight, the heat resistance of the cured resin will decrease. decreases.
ビスマレイミド（Ａ）とジアミノポリシロキサン（Ｂ）
の反応方法は、多官能性ポリアリルエーテルフェノール
類（Ｃ）の共存下で１００〜２０００Ｃの任意の温度で
行い、反応の終点は、得られた樹脂の融点が５０〜１２
０゜Ｃの範囲となるまで反応させる。Bismaleimide (A) and diaminopolysiloxane (B)
The reaction method is carried out at an arbitrary temperature of 100 to 2000C in the coexistence of polyfunctional polyallyl ether phenols (C), and the end point of the reaction is when the melting point of the obtained resin is 50 to 12
React until the temperature reaches 0°C.
なお、反応の終点を確認するには、反応系より少量の樹
脂を取り出し、冷却し、融点を測定し、確認する。In addition, in order to confirm the end point of the reaction, a small amount of resin is taken out from the reaction system, cooled, and the melting point is measured and confirmed.
又、得られた樹脂を用いて戊形材料化するには硬化促進
剤、エポキシ樹脂、無機充填材、滑剤、難燃剤、離型剤
、シランカツプリング剤等を必要に応じて適宜配合添加
し、加熱混練することによって材料化できる。In addition, in order to make a molding material using the obtained resin, a curing accelerator, epoxy resin, inorganic filler, lubricant, flame retardant, mold release agent, silane coupling agent, etc. are appropriately mixed and added as necessary. It can be made into a material by heating and kneading.
本発明の半導体封止用樹脂組戒物を戊形材料として製造
する一般的な方法としては、これらの必須戊分に各種添
加剤を加えて均一に混合した組戊物を二−ダー、熱ロー
ル等により混線処理を行い、冷却後粉砕して戊形材料と
する。A general method for manufacturing the semiconductor encapsulating resin composition of the present invention as a molded material is to add various additives to these essential ingredients and mix the composite uniformly, then heat the composite in a secondary Cross-wire treatment is performed using a roll, etc., and after cooling, the material is crushed to form a round material.
得られた戊形材料を半導体の封止用としてもちいれば高
Ｔｇであり、しかも低応力特性６こ優れ、非常に信頼性
の高い半導体封止用樹脂組戊物を得ることができる。If the obtained hollow material is used for encapsulating a semiconductor, it is possible to obtain a resin assembly for semiconductor encapsulation which has a high Tg, excellent low stress properties, and is extremely reliable.
（実施例）
実施例ｌ〜３
第ｌ表に示す配合でジアミノポリシロキサンとｏ，ｏ’
−ジアリルエーテルビス７エノールＡとを加熱して溶解
し、これにＮ，Ｎ ’−４．４ ’−ジ７エニルメタン
ビスマレイミドを添加し、２０分間反応させ、融点が６
０〜８０゜Ｃの均質なシリコーン変性マレイミド樹脂得
た。(Example) Examples 1 to 3 Diaminopolysiloxane and o, o' in the formulation shown in Table 1
- Diallyl ether bis-7enol A was heated and dissolved, and N,N'-4.4'-di7enylmethane bismaleimide was added thereto and reacted for 20 minutes until the melting point reached 6.
A homogeneous silicone-modified maleimide resin having a temperature of 0 to 80°C was obtained.
比較例ｌ〜５ 第１表に示す配合で実施例と同様に反応させた。Comparative examples 1-5 The reaction was carried out in the same manner as in the examples using the formulations shown in Table 1.
比較例１，３．５は相溶性が悪く、均質な樹脂が得られ
なかった。Comparative Examples 1 and 3.5 had poor compatibility, and a homogeneous resin could not be obtained.
実施例４〜６
第２表に示すように実施例１〜３で得たシリコーン変性
マレイミド樹脂にシリカ粉末、硬化促進剤、アミノシラ
ン、着色剤および離型剤を配合し、熱ロールで混練し或
形材料を得た。Examples 4 to 6 As shown in Table 2, silica powder, hardening accelerator, aminosilane, coloring agent, and mold release agent were blended with the silicone-modified maleimide resin obtained in Examples 1 to 3, and the mixture was kneaded with a hot roll. The shaped material was obtained.
得られた戊形材料をトランスファー戊形により１８０℃
，３分で戊形しフクレの無い光沢の有る戒形品が得られ
た、この戊形品をさらに１８０℃．８時間後硬化を行い
特性を評価した。結果を第２表に示す。The obtained molded material was heated to 180°C by transfer molding.
The molded product was molded in 3 minutes and had a glossy finish without blisters.The molded product was further heated at 180°C. After curing for 8 hours, the properties were evaluated. The results are shown in Table 2.
実施例ｌ〜３の樹脂を用いた実施例４〜６の戊形材料は
常温での曲げ弾性率が小さく、低応力で、内部応力も小
さい。しかも、ガラス転移点温度が高く、２５０℃での
曲げ強度も大きく、耐熱性、耐半田クラック性に優れて
いる。The blank materials of Examples 4 to 6 using the resins of Examples 1 to 3 have a small bending modulus at room temperature, low stress, and small internal stress. Moreover, it has a high glass transition temperature, high bending strength at 250°C, and excellent heat resistance and solder crack resistance.
比較例６．７
比較例２．比較例４の樹脂を第２表に示す配合で同様に
戊形して特性を評価した。結果を第２表に示す。Comparative Example 6.7 Comparative Example 2. The resin of Comparative Example 4 was molded in the same manner as shown in Table 2, and its properties were evaluated. The results are shown in Table 2.
比較例２．４の樹脂を用いた比較例６．７の成形材料は
常温での曲げ弾性率が高すぎたり、吸水率が大きいため
耐半田クラック性に劣るものであっＩこ。The molding material of Comparative Example 6.7 using the resin of Comparative Example 2.4 had an excessively high flexural modulus at room temperature and a high water absorption rate, so it had poor solder crack resistance.
（以
下
余
白）
（発明の効果）
本発明の製造方法による半導体封止用樹脂を用いた組戊
物の硬化したものは高Ｔｇであり、耐湿性及び熱時の強
度に優れているＩ；め封正体の耐半田クラック性が良く
、かつ低応力であり耐ヒートサイクル性にも優れており
、半導体封止用樹脂組威物として非常に信頼性の高い優
れたものである。(The following is a blank space) (Effects of the invention) The cured composite using the resin for semiconductor encapsulation produced by the manufacturing method of the present invention has a high Tg and has excellent moisture resistance and strength under heat. The encapsulating body has good solder crack resistance, low stress, and excellent heat cycle resistance, making it an excellent and extremely reliable resin composite for semiconductor encapsulation.
Claims (1)
１００重量部 ▲数式、化学式、表等があります▼‐‐‐‐‐‐‐‐（
I 〕 Ｒ＿１：２価の芳香族基 （Ｂ）下記式〔II〕で示されるジアミノポリシロキサン
５〜５０重量部 ▲数式、化学式、表等があります▼‐‐‐‐‐‐〔II〕 Ｒ＿２：アルキレン基又はフェニレン基 Ｒ＿３、Ｒ＿４：アルキル基又はフェニル基ｎ：１〜１
００ （Ｃ）下記式〔III〕で示される多官能ポリアリルエー
テルフェノール類１０〜１００重量部 ▲数式、化学式、表等があります▼‐‐‐‐‐‐〔III
〕 Ｒ＿５：−Ｏ−，−ＣＨ＿２−、▲数式、化学式、表等
があります▼、 −ＳＯ＿２−、▲数式、化学式、表等があります▼ ｍ：０〜１０ の（Ａ）と（Ｂ）とを（Ｃ）の共存下で、生成樹脂の融
点が５０〜１２００℃となるまで反応させることを特徴
とする封止用樹脂の製造方法。(1) (A) 100 parts by weight of bismaleimide represented by the following formula [I] ▲ Numerical formulas, chemical formulas, tables, etc. are available ▼ ‐‐‐‐‐‐‐‐‐
I] R_1: Divalent aromatic group (B) 5 to 50 parts by weight of diamino polysiloxane represented by the following formula [II] ▲ Numerical formulas, chemical formulas, tables, etc. are available▼-----[II] R_2: Alkylene group or phenylene group R_3, R_4: alkyl group or phenyl group n: 1-1
00 (C) 10 to 100 parts by weight of polyfunctional polyallyl ether phenols represented by the following formula [III] ▲ Numerical formulas, chemical formulas, tables, etc. are available ▼ ‐‐‐‐‐‐ [III
] R_5: -O-, -CH_2-, ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼, -SO_2-, ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ m: 0 to 10 (A) and (B) A method for producing a sealing resin, which comprises reacting in the coexistence of (C) until the resulting resin has a melting point of 50 to 1200°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19151689A JP2872701B2 (en) | 1989-07-26 | 1989-07-26 | Method for producing resin for semiconductor encapsulation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19151689A JP2872701B2 (en) | 1989-07-26 | 1989-07-26 | Method for producing resin for semiconductor encapsulation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0356533A true JPH0356533A (en) | 1991-03-12 |
| JP2872701B2 JP2872701B2 (en) | 1999-03-24 |
Family
ID=16275956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19151689A Expired - Lifetime JP2872701B2 (en) | 1989-07-26 | 1989-07-26 | Method for producing resin for semiconductor encapsulation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2872701B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024077887A1 (en) * | 2022-10-11 | 2024-04-18 | 苏州生益科技有限公司 | Modified bismaleimide prepolymer, resin composition, and use of resin composition |
-
1989
- 1989-07-26 JP JP19151689A patent/JP2872701B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024077887A1 (en) * | 2022-10-11 | 2024-04-18 | 苏州生益科技有限公司 | Modified bismaleimide prepolymer, resin composition, and use of resin composition |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2872701B2 (en) | 1999-03-24 |
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