JPH0355549B2 - - Google Patents
Info
- Publication number
- JPH0355549B2 JPH0355549B2 JP62292004A JP29200487A JPH0355549B2 JP H0355549 B2 JPH0355549 B2 JP H0355549B2 JP 62292004 A JP62292004 A JP 62292004A JP 29200487 A JP29200487 A JP 29200487A JP H0355549 B2 JPH0355549 B2 JP H0355549B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- substrate
- electrode
- energy
- discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 47
- 238000005530 etching Methods 0.000 claims description 23
- 150000002500 ions Chemical class 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 description 17
- 239000007789 gas Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000012212 insulator Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- -1 fluorine ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62292004A JPS63190162A (ja) | 1987-11-20 | 1987-11-20 | プラズマ処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62292004A JPS63190162A (ja) | 1987-11-20 | 1987-11-20 | プラズマ処理装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14375276A Division JPS5368171A (en) | 1976-11-30 | 1976-11-30 | Method and apparatus for plasma treatment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63190162A JPS63190162A (ja) | 1988-08-05 |
| JPH0355549B2 true JPH0355549B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-08-23 |
Family
ID=17776282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62292004A Granted JPS63190162A (ja) | 1987-11-20 | 1987-11-20 | プラズマ処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63190162A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2752225B2 (ja) * | 1990-03-22 | 1998-05-18 | 松下電器産業株式会社 | 硬質炭素膜の合成方法 |
-
1987
- 1987-11-20 JP JP62292004A patent/JPS63190162A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63190162A (ja) | 1988-08-05 |