JPH0352435B2 - - Google Patents

Info

Publication number
JPH0352435B2
JPH0352435B2 JP11355487A JP11355487A JPH0352435B2 JP H0352435 B2 JPH0352435 B2 JP H0352435B2 JP 11355487 A JP11355487 A JP 11355487A JP 11355487 A JP11355487 A JP 11355487A JP H0352435 B2 JPH0352435 B2 JP H0352435B2
Authority
JP
Japan
Prior art keywords
molecular beam
beam source
crucible
source cell
mbe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11355487A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63282189A (ja
Inventor
Toshihiro Nakamura
Junji Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP11355487A priority Critical patent/JPS63282189A/ja
Publication of JPS63282189A publication Critical patent/JPS63282189A/ja
Publication of JPH0352435B2 publication Critical patent/JPH0352435B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP11355487A 1987-05-12 1987-05-12 分子線エピタキシャル成長装置 Granted JPS63282189A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11355487A JPS63282189A (ja) 1987-05-12 1987-05-12 分子線エピタキシャル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11355487A JPS63282189A (ja) 1987-05-12 1987-05-12 分子線エピタキシャル成長装置

Publications (2)

Publication Number Publication Date
JPS63282189A JPS63282189A (ja) 1988-11-18
JPH0352435B2 true JPH0352435B2 (enrdf_load_stackoverflow) 1991-08-09

Family

ID=14615235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11355487A Granted JPS63282189A (ja) 1987-05-12 1987-05-12 分子線エピタキシャル成長装置

Country Status (1)

Country Link
JP (1) JPS63282189A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS63282189A (ja) 1988-11-18

Similar Documents

Publication Publication Date Title
JPS6134929A (ja) 半導体結晶成長装置
US6255004B1 (en) III-V nitride semiconductor devices and process for the production thereof
JPS6255688B2 (enrdf_load_stackoverflow)
JPH0352435B2 (enrdf_load_stackoverflow)
JPH07267795A (ja) ＳｉＣ単結晶の成長方法
JPH0722132B2 (ja) 気相成長方法
JPS6329743Y2 (enrdf_load_stackoverflow)
JP2688365B2 (ja) 基板ホルダ
JPS61260622A (ja) ＧａＡｓ単結晶薄膜の成長法
JPH05887A (ja) 分子線結晶成長装置
JPS62190719A (ja) 分子線エピタキシヤル成長装置
JPH0831410B2 (ja) 半導体装置の製造方法
JPS63129616A (ja) 半導体装置及びその形成方法
JP3126163B2 (ja) ガスソース分子線エピタキシャル成長装置
JP2641539B2 (ja) 半導体装置の製造方法
JP2759298B2 (ja) 薄膜の形成方法
JP2830932B2 (ja) 分子線エピタキシャル成長方法
JPH1092747A (ja) 非晶質ＧａＡｓ薄膜の製造方法および非晶質ＧａＡｓＴＦＴの製造方法
JPH11283925A (ja) 化合物半導体の製膜方法
JPS6272113A (ja) 分子線結晶成長装置
JP2753832B2 (ja) 第▲ｉｉｉ▼・ｖ族化合物半導体の気相成長法
JPH07201747A (ja) 化合物半導体層の形成方法
JPH04274316A (ja) 分子線エピタキシー用セル
JP3096579B2 (ja) 気相成長方法及び気相成長装置
JPS61187225A (ja) 分子線源セル

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term